Severe mechanical fractu re and unstable interphase,associated with the large volumetric expansion/contraction,significantly hinder the application of high-capacity SiO_(x)materials in lithium-ion batteries.Herein,we ...Severe mechanical fractu re and unstable interphase,associated with the large volumetric expansion/contraction,significantly hinder the application of high-capacity SiO_(x)materials in lithium-ion batteries.Herein,we report the design and facile synthesis of a layer stacked SiO_(x)microparticle(LS-SiO_(x))material,which presents a stacking structure of SiO_(x)layers with abundant disconnected interstices.This LS-SiO_(x)microparticle can effectively accommodate the volume expansion,while ensuring negligible particle expansion.More importantly,the interstices within SiO_(x)microparticle are disconnected from each other,which efficiently prevent the electrolyte from infiltration into the interior,achieving stable electrode/-electrolyte interface.Accordingly,the LS-SiO_(x)material without any coating delivers ultrahigh average Coulombic efficiency,outstanding cycling stability,and full-cell applicability.Only 6 cycles can attain>99.92%Coulombic efficiency and the capacity retention at 0.05 A g^(-1)for 100 cycles exceeds99%.After 800 cycles at 1 A g^(-1),the thickness swelling of LS-SiO_(x)electrode is as low as 0.87%.Moreover,the full cell with pure LS-SiO_(x)anode exhibits capacity retention of 91.2%after 300 cycles at 0.2 C.This work provides a novel concept and effective approach to rationally design silicon-based and other electrode materials with huge volume variation for electrochemical energy storage applications.展开更多
Carbonaceous material has attracted much attention in the application of sodium-ion batteries(SIBs)anode.However,sluggish reaction kinetics and structure stability impede the application.Therefore,a stacked layered su...Carbonaceous material has attracted much attention in the application of sodium-ion batteries(SIBs)anode.However,sluggish reaction kinetics and structure stability impede the application.Therefore,a stacked layered sulfur-carbon complex with long-chain C–S_(x)–C bond(M-SC-S)is prepared.The layered structure ensures structural stability,and long-chain C–S_(x)–C bond expanding interlayer spacing boosts facile Na+diffusion.When assembled into cells,a high-quality solid-electrolyte interphase film would be formed due to a good match between the M-SC-S electrode and ether electrolyte.Moreover,an electrochemical activation process would happen between the Cu current collector and proper S-doped electrode material to in-situ form Cu_(2)S.The formation of Cu_(2)S in active material can not only provide more active sites for sodium storage and enhance pseudo-capacitance,but also reinforce the electrode/current collector interface and decrease the interfacial transfer resistance for rapid Na+kinetics.The synergistic effect of structure design and interface engineering optimizes the sodium storage system.Thus,the M-SC-S electrode delivers an excellent cyclic performance(321.6 mAh g^(−1)after 1000 cycles at 2 A g^(−1)with a capacity retention rate of 97.4%)and good rate capability(282.8 mAh g^(−1)after 4000 cycles even at a high current density of 10 A g^(−1)).The full cell also has an impressive cyclic performance(151.4 mAh g^(−1)after 500 cycles at 0.5 A g^(−1)).展开更多
Hierarchical layer-stacking Mn-Ce composite oxide with mesoporous structure was firstly prepared by a simple precipitation/decomposition procedure with oxalate precursor and the complete catalytic oxidation of VOCs（b...Hierarchical layer-stacking Mn-Ce composite oxide with mesoporous structure was firstly prepared by a simple precipitation/decomposition procedure with oxalate precursor and the complete catalytic oxidation of VOCs（benzene, toluene and ethyl acetate） were examined. The Mn-Ce oxalate precursor was obtained from metal salt and oxalic acid without any additives. The resulting materials were characterized by X-ray diffraction（XRD）, Brunauer-Emmett-Teller（BET）, scanning electron microscopy（SEM）, energy dispersive X-ray spectroscopy（EDX）, hydrogen temperature programmed reduction（H2-TPR） and X-ray photoelectron spectroscopy（XPS）. Compared with Mn-Ce composite oxide synthesized through a traditional method（Na2CO3 route）, the hierarchical layer-stacking Mn-Ce composite oxide exhibited higher catalytic activity in the complete oxidation of volatile organic compounds（VOCs）. By means of testing, the data revealed that the hierarchical layer-stacking Mn-Ce composite oxide possessed superior physiochemical properties such as good low-temperature reducibility, high manganese oxidation state and rich adsorbed surface oxygen species which resulted in the enhancement of catalytic abilities.展开更多
In this paper, we investigate an Al2O3/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon- type （MONOS） memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the block...In this paper, we investigate an Al2O3/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon- type （MONOS） memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al2O3/HfO2 stack as the blocking layer, the sample with the Al2O3/HfSiO stack as the blocking layer shows high program/erase （P/E） speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al2O3/HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications.展开更多
Twisting the stacking of layered materials leads to rich new physics. A three-dimensional topological insulator film hosts two-dimensional gapless Dirac electrons on top and bottom surfaces, which, when the film is be...Twisting the stacking of layered materials leads to rich new physics. A three-dimensional topological insulator film hosts two-dimensional gapless Dirac electrons on top and bottom surfaces, which, when the film is below some critical thickness, will hybridize and open a gap in the surface state structure. The hybridization gap can be tuned by various parameters such as film thickness and inversion symmetry, according to the literature. The three-dimensional strong topological insulator Bi(Sb)Se(Te) family has layered structures composed of quintuple layers(QLs) stacked together by van der Waals interaction. Here we successfully grow twistedly stacked Sb_2Te_3 QLs and investigate the effect of twist angels on the hybridization gaps below the thickness limit. It is found that the hybridization gap can be tuned for films of three QLs, which may lead to quantum spin Hall states.Signatures of gap-closing are found in 3-QL films. The successful in situ application of this approach opens a new route to search for exotic physics in topological insulators.展开更多
Few-layer graphene grown on Ni thin films has been studied by scanning tunneling microscopy. In most areas on the surfaces, moir6 patterns resulted from rotational stacking faults were observed. At a bias lower than 2...Few-layer graphene grown on Ni thin films has been studied by scanning tunneling microscopy. In most areas on the surfaces, moir6 patterns resulted from rotational stacking faults were observed. At a bias lower than 200 mV, only one sublattice shows up in regions without moir6 patterns while both sublattices are seen in regions with moir6 pattens. This phenomenon can be used to identify AB stacked regions. The scattering characteristics at various types of step edges are different from those of monolayer graphene edges, either armchair or zigzag.展开更多
基金the support of the National Natural Science Foundation of China(51634003)。
文摘Severe mechanical fractu re and unstable interphase,associated with the large volumetric expansion/contraction,significantly hinder the application of high-capacity SiO_(x)materials in lithium-ion batteries.Herein,we report the design and facile synthesis of a layer stacked SiO_(x)microparticle(LS-SiO_(x))material,which presents a stacking structure of SiO_(x)layers with abundant disconnected interstices.This LS-SiO_(x)microparticle can effectively accommodate the volume expansion,while ensuring negligible particle expansion.More importantly,the interstices within SiO_(x)microparticle are disconnected from each other,which efficiently prevent the electrolyte from infiltration into the interior,achieving stable electrode/-electrolyte interface.Accordingly,the LS-SiO_(x)material without any coating delivers ultrahigh average Coulombic efficiency,outstanding cycling stability,and full-cell applicability.Only 6 cycles can attain>99.92%Coulombic efficiency and the capacity retention at 0.05 A g^(-1)for 100 cycles exceeds99%.After 800 cycles at 1 A g^(-1),the thickness swelling of LS-SiO_(x)electrode is as low as 0.87%.Moreover,the full cell with pure LS-SiO_(x)anode exhibits capacity retention of 91.2%after 300 cycles at 0.2 C.This work provides a novel concept and effective approach to rationally design silicon-based and other electrode materials with huge volume variation for electrochemical energy storage applications.
基金supported by the Key Research and Development Program of Wuhan(2025010102030005)the National Nature Science Foundation of Jiangsu Province(BK20221259)。
文摘Carbonaceous material has attracted much attention in the application of sodium-ion batteries(SIBs)anode.However,sluggish reaction kinetics and structure stability impede the application.Therefore,a stacked layered sulfur-carbon complex with long-chain C–S_(x)–C bond(M-SC-S)is prepared.The layered structure ensures structural stability,and long-chain C–S_(x)–C bond expanding interlayer spacing boosts facile Na+diffusion.When assembled into cells,a high-quality solid-electrolyte interphase film would be formed due to a good match between the M-SC-S electrode and ether electrolyte.Moreover,an electrochemical activation process would happen between the Cu current collector and proper S-doped electrode material to in-situ form Cu_(2)S.The formation of Cu_(2)S in active material can not only provide more active sites for sodium storage and enhance pseudo-capacitance,but also reinforce the electrode/current collector interface and decrease the interfacial transfer resistance for rapid Na+kinetics.The synergistic effect of structure design and interface engineering optimizes the sodium storage system.Thus,the M-SC-S electrode delivers an excellent cyclic performance(321.6 mAh g^(−1)after 1000 cycles at 2 A g^(−1)with a capacity retention rate of 97.4%)and good rate capability(282.8 mAh g^(−1)after 4000 cycles even at a high current density of 10 A g^(−1)).The full cell also has an impressive cyclic performance(151.4 mAh g^(−1)after 500 cycles at 0.5 A g^(−1)).
基金supported by Strategic Project of Science and Technology of Chinese Academy of Sciences(XDB05050000)the National Natural Science Foundation of China(51272253)
文摘Hierarchical layer-stacking Mn-Ce composite oxide with mesoporous structure was firstly prepared by a simple precipitation/decomposition procedure with oxalate precursor and the complete catalytic oxidation of VOCs（benzene, toluene and ethyl acetate） were examined. The Mn-Ce oxalate precursor was obtained from metal salt and oxalic acid without any additives. The resulting materials were characterized by X-ray diffraction（XRD）, Brunauer-Emmett-Teller（BET）, scanning electron microscopy（SEM）, energy dispersive X-ray spectroscopy（EDX）, hydrogen temperature programmed reduction（H2-TPR） and X-ray photoelectron spectroscopy（XPS）. Compared with Mn-Ce composite oxide synthesized through a traditional method（Na2CO3 route）, the hierarchical layer-stacking Mn-Ce composite oxide exhibited higher catalytic activity in the complete oxidation of volatile organic compounds（VOCs）. By means of testing, the data revealed that the hierarchical layer-stacking Mn-Ce composite oxide possessed superior physiochemical properties such as good low-temperature reducibility, high manganese oxidation state and rich adsorbed surface oxygen species which resulted in the enhancement of catalytic abilities.
基金supported partially by the National Basic Research Program of China (Grant No. 2010CB934204)the National Natural Science Foundation of China (Grant No. 60825403)+1 种基金the Director’s Fund of Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS)the National Science and Technology Major Project of China (Grant No. 2009ZX02023-005)
文摘In this paper, we investigate an Al2O3/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon- type （MONOS） memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al2O3/HfO2 stack as the blocking layer, the sample with the Al2O3/HfSiO stack as the blocking layer shows high program/erase （P/E） speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al2O3/HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications.
基金Supported by the National Natural Science Foundation of China (Grant Nos.61804056 and 92065102)。
文摘Twisting the stacking of layered materials leads to rich new physics. A three-dimensional topological insulator film hosts two-dimensional gapless Dirac electrons on top and bottom surfaces, which, when the film is below some critical thickness, will hybridize and open a gap in the surface state structure. The hybridization gap can be tuned by various parameters such as film thickness and inversion symmetry, according to the literature. The three-dimensional strong topological insulator Bi(Sb)Se(Te) family has layered structures composed of quintuple layers(QLs) stacked together by van der Waals interaction. Here we successfully grow twistedly stacked Sb_2Te_3 QLs and investigate the effect of twist angels on the hybridization gaps below the thickness limit. It is found that the hybridization gap can be tuned for films of three QLs, which may lead to quantum spin Hall states.Signatures of gap-closing are found in 3-QL films. The successful in situ application of this approach opens a new route to search for exotic physics in topological insulators.
基金supported by the National Basic Research Program of China(Grant No.2012CB921300)the National Natural Science Foundation of China(Grant Nos.11074005 and 91021007)the Chinese Ministry of Education
文摘Few-layer graphene grown on Ni thin films has been studied by scanning tunneling microscopy. In most areas on the surfaces, moir6 patterns resulted from rotational stacking faults were observed. At a bias lower than 200 mV, only one sublattice shows up in regions without moir6 patterns while both sublattices are seen in regions with moir6 pattens. This phenomenon can be used to identify AB stacked regions. The scattering characteristics at various types of step edges are different from those of monolayer graphene edges, either armchair or zigzag.
