We describe the lateral-coupled junctionless indium-zinc-oxide （IZO） thin-film transistors （TFTs） in which there are no junctions between channel and source/drain electrodes and with solid-state phosphorosilieate ...We describe the lateral-coupled junctionless indium-zinc-oxide （IZO） thin-film transistors （TFTs） in which there are no junctions between channel and source/drain electrodes and with solid-state phosphorosilieate glass electrolyte （PSG） gating. Due to the three-dimensional high proton conduction and lateral coupled electric-double- layer （EDL） capacitance （〉 1 #Flora2） of the PSG, the low voltage （2.0 V） junctionless IZO TFTs and the dual eoplanar gate devices are obtained. An AND logic function is demonstrated on the basis of the junctionless EDL-TFTs. Such devices are promising for applications in pH sensors, humidity sensors, biosensors, and neuron network simulation.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 51302276 and 51301043the Ningbo Natural Science Foundation under Grant No 2013A610129
文摘We describe the lateral-coupled junctionless indium-zinc-oxide （IZO） thin-film transistors （TFTs） in which there are no junctions between channel and source/drain electrodes and with solid-state phosphorosilieate glass electrolyte （PSG） gating. Due to the three-dimensional high proton conduction and lateral coupled electric-double- layer （EDL） capacitance （〉 1 #Flora2） of the PSG, the low voltage （2.0 V） junctionless IZO TFTs and the dual eoplanar gate devices are obtained. An AND logic function is demonstrated on the basis of the junctionless EDL-TFTs. Such devices are promising for applications in pH sensors, humidity sensors, biosensors, and neuron network simulation.
