Stimulated emission and lasing of GaN-based laser diodes(LDs)were reported at 1995[1]and 1996[2],right after the breakthrough of p-type doping[3−5],material quality[6]and the invention of high-brightness GaN-based LED...Stimulated emission and lasing of GaN-based laser diodes(LDs)were reported at 1995[1]and 1996[2],right after the breakthrough of p-type doping[3−5],material quality[6]and the invention of high-brightness GaN-based LEDs[7,8].However,it took much longer time for GaN-based LDs to achieve high power,high wall plug efficiency,and long lifetime.Until 2019,Nichia reported blue LDs with these performances[9],which open wide applications with GaN-based blue LDs.展开更多
There is nonradiative recombination in waveguide region owing to severe carrier leakage,which in turn reduces output power and wall-plug efficiency.In this paper,we designed a novel epitaxial structure,which suppresse...There is nonradiative recombination in waveguide region owing to severe carrier leakage,which in turn reduces output power and wall-plug efficiency.In this paper,we designed a novel epitaxial structure,which suppresses carrier leakage by inserting n-Ga_(0.55)In_(0.45)P and p-GaAs_(0.6)P_(0.4) between barriers and waveguide layers,respectively,to modulate the energy band structure and to increase the height of barrier.The results show that the leakage current density reduces by 87.71%,compared to traditional structure.The nonradiative recombination current density of novel structure reduces to 37.411 A/cm^(2),and the output power reaches 12.80 W with wall-plug efficiency of 78.24%at an injection current density 5 A/cm^(2) at room temperature.In addition,the temperature drift coefficient of center wavelength is 0.206 nm/℃at the temperature range from 5℃to 65℃,and the slope of fitted straight line of threshold current with temperature variation is 0.00113.The novel epitaxial structure provides a theoretical basis for achieving high-power laser diode.展开更多
The packaging quality of coaxial laser diodes(CLDs)plays a pivotal role in determining their optical performance and long-term reliability.As the core packaging process,high-precision laser welding requires precise co...The packaging quality of coaxial laser diodes(CLDs)plays a pivotal role in determining their optical performance and long-term reliability.As the core packaging process,high-precision laser welding requires precise control of process parameters to suppress optical power loss.However,the complex nonlinear relationship between welding parameters and optical power loss renders traditional trial-and-error methods inefficient and imprecise.To address this challenge,a physics-informed(PI)and data-driven collaboration approach for welding parameter optimization is proposed.First,thermal-fluid-solid coupling finite element method(FEM)was employed to quantify the sensitivity of welding parameters to physical characteristics,including residual stress.This analysis facilitated the identification of critical factors contributing to optical power loss.Subsequently,a Gaussian process regression(GPR)model incorporating finite element simulation prior knowledge was constructed based on the selected features.By introducing physics-informed kernel(PIK)functions,stress distribution patterns were embedded into the prediction model,achieving high-precision optical power loss prediction.Finally,a Bayesian optimization(BO)algorithm with an adaptive sampling strategy was implemented for efficient parameter space exploration.Experimental results demonstrate that the proposedmethod effectively establishes explicit physical correlations between welding parameters and optical power loss.The optimized welding parameters reduced optical power loss by 34.1%,providing theoretical guidance and technical support for reliable CLD packaging.展开更多
Power grid is an indispensable infrastructure in modern society,in order to ensure the normal operation of the grid,online non-contact monitoring of high-voltage lines is essential.In this work,a‘capacitor-laser diod...Power grid is an indispensable infrastructure in modern society,in order to ensure the normal operation of the grid,online non-contact monitoring of high-voltage lines is essential.In this work,a‘capacitor-laser diode(LD)-capacitor’structure,namely,laser diode in capacitors(LDIC),that can be used for non-contact monitoring of high-voltage(HV)line status by directly transferring the status information of the HV line to modulated laser pulses is proposed.The proposed LDIC can accurately extract the real-time voltage changes on the HV line with an accuracy level of 0.959%.Because the LDIC is sensitive to high-frequency electromagnetic field,the LDIC is successfully utilised to detect the external electromagnetic interference(EMI)to obtain the intensity and frequency of the external EMI.Additionally,the amplitude and frequency of the HV line vibration can be accurately monitored by using the LDIC.For the third-order curve fitting of vibration amplitude,the average error is only 0.00867,and the average error of linear fitting of vibration frequency is as low as 0.00655.This work provides a novel approach for the online monitoring of the HV line status and a new supplement for the development of power grid technology.展开更多
Multidimensional influences of indium composition in barrier layers on GaN-based blue laser diodes(LDs)are discussed from both material quality and device physics perspectives.LDs with higher indium content in the bar...Multidimensional influences of indium composition in barrier layers on GaN-based blue laser diodes(LDs)are discussed from both material quality and device physics perspectives.LDs with higher indium content in the barriers demonstrate a notably lower threshold current and shorter lasing wavelength compared to those with lower indium content.Our experiments reveal that higher indium content in the barrier layers can partially reduce indium composition in the quantum wells,a novel discovery.Employing higher indium content barrier layers leads to improved luminescence properties of the MQW region.Detailed analysis reveals that this improvement can be attributed to better homogeneity in the indium composition of the well layers along the epitaxy direction.InGaN barrier layers suppress the lattice mismatch between barrier and well layers,thus mitigating the indium content pulling effect in the well layers.In supplement to experimental analysis,theoretical computations are performed,showing that InGaN barrier structures can effectively enhance carrier recombination efficiency and optical confinement of LD structure,thus improving the output efficiency of GaN-based blue LDs.Combining these theoretical insights with our experimental data,we propose that higher indium content barriers effectively enhance carrier recombination efficiency and indium content homogeneity in quantum well layers,thereby improving the output performance of GaN-based blue LDs.展开更多
A piece of multimode optical fiber with a low num er ical aperture (NA) is used as an inexpensive microlens to collimate the output r adiation of a laser diode bar in the high numerical aperture (NA) direction.The em...A piece of multimode optical fiber with a low num er ical aperture (NA) is used as an inexpensive microlens to collimate the output r adiation of a laser diode bar in the high numerical aperture (NA) direction.The emissions of the laser diode bar are coupled into multimode fiber array.The radi ation from individual ones of emitter regions is optically coupled into individu al ones of fiber array.Total coupling efficiency and fiber output power are 75% and 15W,respectively.展开更多
Material growth and device fabrication of the first 1.3μm quantum well （QW） edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy （MBE） growth conditions and the...Material growth and device fabrication of the first 1.3μm quantum well （QW） edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy （MBE） growth conditions and the tuning of the indium and nitrogen composition of the GalnNAs QWs, the emission wavelengths of the QWs can be tuned to 1.3μm. Ridge geometry waveguide laser diodes are fabricated. The lasing wavelength is 1.3μm under continuous current injection at room temperature with threshold current of 1kA/cm^2 for the laser diode structures with the cleaved facet mirrors. The output light power over 30mW is obtained.展开更多
The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots （QDs） by molecular beam epitaxy （MBE） is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature ...The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots （QDs） by molecular beam epitaxy （MBE） is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence （PL） spectra at room temperature is less than 35meV for most of the multi-layer QD samples,revealing good,reproducible MBE growth conditions. Moreover,atomic force microscopy images show that the QD surface density can be controlled in the range from 1×10^10 to 7 ×10^10 cm^-2 . The best PL properties are obtained at a QD surface density of about 4×10^10cm^-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.展开更多
The 808nm laser diodes with a broad waveguide are designed and fabricated.The thickness of the Al_ 0.35 - Ga_ 0.65 As waveguide is increased to 0.9μm.In order to suppress the super modes,the thickness of the A...The 808nm laser diodes with a broad waveguide are designed and fabricated.The thickness of the Al_ 0.35 - Ga_ 0.65 As waveguide is increased to 0.9μm.In order to suppress the super modes,the thickness of the Al_ 0.55 Ga_ 0.45 As cladding layers is reduced to only 0.7μm while keeping the transverse radiation losses of the fundamental mode below 0.2cm -1 .The structures are grown by metal organic chemical vapour deposition.The devices show excellent performances.The maximum output power of 10.2W in the 100μm broad-area laser diodes is obtained.展开更多
A 1.60μm laser diode and electroabsorption modulator monolithically integrated with a novel dual-waveguide spot-size converter output for low-loss coupling to a cleaved single-mode optical fiber are demonstrated.The ...A 1.60μm laser diode and electroabsorption modulator monolithically integrated with a novel dual-waveguide spot-size converter output for low-loss coupling to a cleaved single-mode optical fiber are demonstrated.The devices emit in a single transverse and quasi single longitudinal mode with an SMSR of 25.6dB.These devices exhibit a 3dB modulation bandwidth of 15.0GHz,and modulator DC extinction ratios of 16.2dB.The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3°×18.0°,respectively,resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.展开更多
A DC-10Mb/s laser diode driver,compatible with TTL and CMOS levels,is presented. The optical power corresponding to‘1＇ and ‘0＇ can be set independently with resistors off-chip and stabilized with a closed loop. A ...A DC-10Mb/s laser diode driver,compatible with TTL and CMOS levels,is presented. The optical power corresponding to‘1＇ and ‘0＇ can be set independently with resistors off-chip and stabilized with a closed loop. A novel peak-to- peak optical power monitor and stabilization mechanism is introduced. The circuit, fabricated in a CSMC 0. 5μm mixed signal CMOS process, can provide 120mA maximum drive current and 0. 6dB extinction ration fluctuation over - 20 ＋ 80℃ ,which is independent of input pattern.展开更多
Using native CMOS technology,EDA tool,and adopting full-custom design methodology,a laser diode driver for the use of STM-1 and STM-4 optical access network,is realized by CSMC-HJ 0.6μm CMOS technology to modulate la...Using native CMOS technology,EDA tool,and adopting full-custom design methodology,a laser diode driver for the use of STM-1 and STM-4 optical access network,is realized by CSMC-HJ 0.6μm CMOS technology to modulate laser diodes at 155Mb/s (STM-1),622Mb/s (STM-4) with adjustable modulation current from 0 to 50mA for an equivalent 50Ω load.The maximum modulation voltage is over 2.5V pp corresponding to a 3V DC bias for output stage.The time range of rise and fall from 360ps to 471ps is measured from the output voltage pulse.The RMS jitter is no more than 30ps for four bit rates.The power consumption is less than 410mW under a power supply voltage of 5V.According to the experimental results,the laser diode driver achieves the same level as their counterparts worldwide.展开更多
A novel 1 55μm laser diode with spot size converter is designed and fabricated using conventional photolithography and chemical wet etching process.For the laser diode,a ridge double core structure is employed.For...A novel 1 55μm laser diode with spot size converter is designed and fabricated using conventional photolithography and chemical wet etching process.For the laser diode,a ridge double core structure is employed.For the spot size converter,a buried ridge double core structure is incorporated.The laterally tapered active core is designed and optically combined with the thin and wide passive core to control the size of mode.The laser diode threshold current is measured to be 40mA together with high slop efficiency of 0 35W/A.The beam divergence angles in the horizontal and vertical directions are as small as 14 89°×18 18°,respectively,resulting in low coupling losses with a cleaved optical fiber (3dB loss).展开更多
Thermal characteristics of multiple laser stripes integrated into one chip is investigated theoretically in this paper. The temperature pattern of the laser diode mini-array packaged in a TO-can is analyzed and optimi...Thermal characteristics of multiple laser stripes integrated into one chip is investigated theoretically in this paper. The temperature pattern of the laser diode mini-array packaged in a TO-can is analyzed and optimized to achieve a uniform temperature distribution among the laser stripes and along the cavity direction. The temperature among the laser stripes varies by more than 5 K if the stripes are equally arranged, and can be reduced to less than 0.4 K if proper arrangement is designed. For conventional submount structure, the temperature variation along the cavity direction is as high as 7 K, while for an optimized trapezoid submount structure, the temperature varies only within 0.5 K.展开更多
By etching a second-order grating directly into the Al-free optical waveguide region of a ridgewaveguide（RW） AlGaInAs/AlGaAs distributed feedback（DFB） laser diode,a front facet output power of 30mW is obtained at ...By etching a second-order grating directly into the Al-free optical waveguide region of a ridgewaveguide（RW） AlGaInAs/AlGaAs distributed feedback（DFB） laser diode,a front facet output power of 30mW is obtained at about 820nm with a single longitudinal mode. The Al-free grating surface permits the re-growth of a high-quality cladding layer that yields excellent device performance. The threshold current of these laser diodes is 57mA,and the slope efficiency is about 0.32mW/mA.展开更多
Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model. A high temperature in the waveguide layer and a large temperature step between the regions under and ...Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model. A high temperature in the waveguide layer and a large temperature step between the regions under and outside the ridge are generated due to the poor thermal conductivity of the sapphire substrate and the large threshold current and voltage. The temperature step is thought to have a strong influence on the characteristics of the laser diodes. Time-resolved measurements of light-current curves,spectra, and the far-field pattern of the InGaN laser diodes under pulsed operation are performed. The results show that the thermal lensing effect improves the confinement of the higher order modes and leads to a lower threshold current and a higher slope efficiency of the device while the high temperature in the active layer results in a drastic decrease in the slope efficiency.展开更多
This paper discusses the design of a 10 Gb/s laser diode driver implemented in SiGe BiCMOS technology. The laser diode driver is composed of an input buffer, a predriver circuit and an output current switch stage. Wit...This paper discusses the design of a 10 Gb/s laser diode driver implemented in SiGe BiCMOS technology. The laser diode driver is composed of an input buffer, a predriver circuit and an output current switch stage. With the current mode logic （CML） structure, the input buffer and the predriver circuit have the capability of transmission and amplification of high speed data. By employing MOS-HBT cascode structure as the output stage, the laser diode driver exhibits very high speed and efficiency working at the 10 Gb/s data rate. The core circuit is operated under a 3. 3 V supply, while the output stage is operated under 5.5 V for sufficient headroom across the laser diode. The chip occupies a die area of 600 μm × 800μm. Measurements on chip show clear electrical eye diagrams over 10 Gb/s, which can well meet the specifications defined by SDH STM64/SONET OC192 and a 10 Gb/s Ethemet eye mask. Under a 5. 5 V supply voltage, the maximum output swing is 3.0 V with a 50 12 load （the corresponding modulation current is 60 mA）, and the total power dissipation is 660 mW.展开更多
We solve the single mode coupled rate equations by computer,simulate the behavior of a gain switch of an AlGaInP red light semiconductor laser diode,and find the characteristic of FWHM of pulses changing with the ampl...We solve the single mode coupled rate equations by computer,simulate the behavior of a gain switch of an AlGaInP red light semiconductor laser diode,and find the characteristic of FWHM of pulses changing with the amplitude of modulation signal, the bias current, and the modulated frequency. On this basis, we conduct experiments. The experiment results accord with the simulations well.展开更多
An accurate technique for measuring the frequency response of semiconductor laser diode chips is proposed and experimentally demonstrated.The effects of test jig parasites can be completely removed in the measurement ...An accurate technique for measuring the frequency response of semiconductor laser diode chips is proposed and experimentally demonstrated.The effects of test jig parasites can be completely removed in the measurement by a new calibration method.In theory,the measuring range of the measurement system is only determined by the measuring range of the instruments network analyzer and photo detector.Diodes' bandwidth of 7 5GHz and 10GHz is measured.The results reveal that the method is feasible and comparing with other method,it is more precise and easier to use.展开更多
In this work,we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode(LD),and its stimulated emission wavelength is around 442 nm.The GaN-based high power blue LD is grown on a c-...In this work,we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode(LD),and its stimulated emission wavelength is around 442 nm.The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition(MOCVD),and the width and length of the ridge waveguide structure are 30 and 1200μm,respectively.The threshold current is about 400 mA,and corresponding threshold current density is 1.1 kA/cm2.展开更多
基金supported by the Natural Science Foundation of Jiangsu Province(Grant.BK20232042).
文摘Stimulated emission and lasing of GaN-based laser diodes(LDs)were reported at 1995[1]and 1996[2],right after the breakthrough of p-type doping[3−5],material quality[6]and the invention of high-brightness GaN-based LEDs[7,8].However,it took much longer time for GaN-based LDs to achieve high power,high wall plug efficiency,and long lifetime.Until 2019,Nichia reported blue LDs with these performances[9],which open wide applications with GaN-based blue LDs.
文摘There is nonradiative recombination in waveguide region owing to severe carrier leakage,which in turn reduces output power and wall-plug efficiency.In this paper,we designed a novel epitaxial structure,which suppresses carrier leakage by inserting n-Ga_(0.55)In_(0.45)P and p-GaAs_(0.6)P_(0.4) between barriers and waveguide layers,respectively,to modulate the energy band structure and to increase the height of barrier.The results show that the leakage current density reduces by 87.71%,compared to traditional structure.The nonradiative recombination current density of novel structure reduces to 37.411 A/cm^(2),and the output power reaches 12.80 W with wall-plug efficiency of 78.24%at an injection current density 5 A/cm^(2) at room temperature.In addition,the temperature drift coefficient of center wavelength is 0.206 nm/℃at the temperature range from 5℃to 65℃,and the slope of fitted straight line of threshold current with temperature variation is 0.00113.The novel epitaxial structure provides a theoretical basis for achieving high-power laser diode.
基金funded by the National Key R&D Program of China,Grant No.2024YFF0504904.
文摘The packaging quality of coaxial laser diodes(CLDs)plays a pivotal role in determining their optical performance and long-term reliability.As the core packaging process,high-precision laser welding requires precise control of process parameters to suppress optical power loss.However,the complex nonlinear relationship between welding parameters and optical power loss renders traditional trial-and-error methods inefficient and imprecise.To address this challenge,a physics-informed(PI)and data-driven collaboration approach for welding parameter optimization is proposed.First,thermal-fluid-solid coupling finite element method(FEM)was employed to quantify the sensitivity of welding parameters to physical characteristics,including residual stress.This analysis facilitated the identification of critical factors contributing to optical power loss.Subsequently,a Gaussian process regression(GPR)model incorporating finite element simulation prior knowledge was constructed based on the selected features.By introducing physics-informed kernel(PIK)functions,stress distribution patterns were embedded into the prediction model,achieving high-precision optical power loss prediction.Finally,a Bayesian optimization(BO)algorithm with an adaptive sampling strategy was implemented for efficient parameter space exploration.Experimental results demonstrate that the proposedmethod effectively establishes explicit physical correlations between welding parameters and optical power loss.The optimized welding parameters reduced optical power loss by 34.1%,providing theoretical guidance and technical support for reliable CLD packaging.
基金supported by National Key R&D Program of China under Grant No.2021YFB3600400Mindu Innovation Laboratory Project under Grant No.2020ZZ113.
文摘Power grid is an indispensable infrastructure in modern society,in order to ensure the normal operation of the grid,online non-contact monitoring of high-voltage lines is essential.In this work,a‘capacitor-laser diode(LD)-capacitor’structure,namely,laser diode in capacitors(LDIC),that can be used for non-contact monitoring of high-voltage(HV)line status by directly transferring the status information of the HV line to modulated laser pulses is proposed.The proposed LDIC can accurately extract the real-time voltage changes on the HV line with an accuracy level of 0.959%.Because the LDIC is sensitive to high-frequency electromagnetic field,the LDIC is successfully utilised to detect the external electromagnetic interference(EMI)to obtain the intensity and frequency of the external EMI.Additionally,the amplitude and frequency of the HV line vibration can be accurately monitored by using the LDIC.For the third-order curve fitting of vibration amplitude,the average error is only 0.00867,and the average error of linear fitting of vibration frequency is as low as 0.00655.This work provides a novel approach for the online monitoring of the HV line status and a new supplement for the development of power grid technology.
基金Project supported by Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant No.2023124)the National Key Research and Development Program of China(Grant No.2022YFB3608100)+3 种基金Key Research and Development Program of Jiangsu Province(Grant No.BE2021008-1)Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering(Grant No.2022SXTD016)the National Natural Science Foundation of China(Grant Nos.62274157,61904172,62127807,62234011,61974162,62034008,62074142,62074140,and 62250038)Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB43030101)。
文摘Multidimensional influences of indium composition in barrier layers on GaN-based blue laser diodes(LDs)are discussed from both material quality and device physics perspectives.LDs with higher indium content in the barriers demonstrate a notably lower threshold current and shorter lasing wavelength compared to those with lower indium content.Our experiments reveal that higher indium content in the barrier layers can partially reduce indium composition in the quantum wells,a novel discovery.Employing higher indium content barrier layers leads to improved luminescence properties of the MQW region.Detailed analysis reveals that this improvement can be attributed to better homogeneity in the indium composition of the well layers along the epitaxy direction.InGaN barrier layers suppress the lattice mismatch between barrier and well layers,thus mitigating the indium content pulling effect in the well layers.In supplement to experimental analysis,theoretical computations are performed,showing that InGaN barrier structures can effectively enhance carrier recombination efficiency and optical confinement of LD structure,thus improving the output efficiency of GaN-based blue LDs.Combining these theoretical insights with our experimental data,we propose that higher indium content barriers effectively enhance carrier recombination efficiency and indium content homogeneity in quantum well layers,thereby improving the output performance of GaN-based blue LDs.
文摘A piece of multimode optical fiber with a low num er ical aperture (NA) is used as an inexpensive microlens to collimate the output r adiation of a laser diode bar in the high numerical aperture (NA) direction.The emissions of the laser diode bar are coupled into multimode fiber array.The radi ation from individual ones of emitter regions is optically coupled into individu al ones of fiber array.Total coupling efficiency and fiber output power are 75% and 15W,respectively.
文摘Material growth and device fabrication of the first 1.3μm quantum well （QW） edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy （MBE） growth conditions and the tuning of the indium and nitrogen composition of the GalnNAs QWs, the emission wavelengths of the QWs can be tuned to 1.3μm. Ridge geometry waveguide laser diodes are fabricated. The lasing wavelength is 1.3μm under continuous current injection at room temperature with threshold current of 1kA/cm^2 for the laser diode structures with the cleaved facet mirrors. The output light power over 30mW is obtained.
文摘The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots （QDs） by molecular beam epitaxy （MBE） is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence （PL） spectra at room temperature is less than 35meV for most of the multi-layer QD samples,revealing good,reproducible MBE growth conditions. Moreover,atomic force microscopy images show that the QD surface density can be controlled in the range from 1×10^10 to 7 ×10^10 cm^-2 . The best PL properties are obtained at a QD surface density of about 4×10^10cm^-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.
文摘The 808nm laser diodes with a broad waveguide are designed and fabricated.The thickness of the Al_ 0.35 - Ga_ 0.65 As waveguide is increased to 0.9μm.In order to suppress the super modes,the thickness of the Al_ 0.55 Ga_ 0.45 As cladding layers is reduced to only 0.7μm while keeping the transverse radiation losses of the fundamental mode below 0.2cm -1 .The structures are grown by metal organic chemical vapour deposition.The devices show excellent performances.The maximum output power of 10.2W in the 100μm broad-area laser diodes is obtained.
文摘A 1.60μm laser diode and electroabsorption modulator monolithically integrated with a novel dual-waveguide spot-size converter output for low-loss coupling to a cleaved single-mode optical fiber are demonstrated.The devices emit in a single transverse and quasi single longitudinal mode with an SMSR of 25.6dB.These devices exhibit a 3dB modulation bandwidth of 15.0GHz,and modulator DC extinction ratios of 16.2dB.The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3°×18.0°,respectively,resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.
文摘A DC-10Mb/s laser diode driver,compatible with TTL and CMOS levels,is presented. The optical power corresponding to‘1＇ and ‘0＇ can be set independently with resistors off-chip and stabilized with a closed loop. A novel peak-to- peak optical power monitor and stabilization mechanism is introduced. The circuit, fabricated in a CSMC 0. 5μm mixed signal CMOS process, can provide 120mA maximum drive current and 0. 6dB extinction ration fluctuation over - 20 ＋ 80℃ ,which is independent of input pattern.
文摘Using native CMOS technology,EDA tool,and adopting full-custom design methodology,a laser diode driver for the use of STM-1 and STM-4 optical access network,is realized by CSMC-HJ 0.6μm CMOS technology to modulate laser diodes at 155Mb/s (STM-1),622Mb/s (STM-4) with adjustable modulation current from 0 to 50mA for an equivalent 50Ω load.The maximum modulation voltage is over 2.5V pp corresponding to a 3V DC bias for output stage.The time range of rise and fall from 360ps to 471ps is measured from the output voltage pulse.The RMS jitter is no more than 30ps for four bit rates.The power consumption is less than 410mW under a power supply voltage of 5V.According to the experimental results,the laser diode driver achieves the same level as their counterparts worldwide.
文摘A novel 1 55μm laser diode with spot size converter is designed and fabricated using conventional photolithography and chemical wet etching process.For the laser diode,a ridge double core structure is employed.For the spot size converter,a buried ridge double core structure is incorporated.The laterally tapered active core is designed and optically combined with the thin and wide passive core to control the size of mode.The laser diode threshold current is measured to be 40mA together with high slop efficiency of 0 35W/A.The beam divergence angles in the horizontal and vertical directions are as small as 14 89°×18 18°,respectively,resulting in low coupling losses with a cleaved optical fiber (3dB loss).
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2016YFB0402002,2016YFB0401803,2017YFB0405002,2017YFB0405003,and 2017YFB0405005)the National Natural Science Foundation of China(Grant Nos.61574160,61704184,and 61334005)+3 种基金the Strategic Priority Research Program of the Chinese Academy of Science(Grant No.XDA09020401)the Chinese Academy of Science Visiting Professorship for Senior International Scientists(Grant No.2013T2J0048)the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20170430)the CPSF-CAS Joint Foundation for Excellent Postdoctoral Fellows,China(Grant No.2016LH0026)
文摘Thermal characteristics of multiple laser stripes integrated into one chip is investigated theoretically in this paper. The temperature pattern of the laser diode mini-array packaged in a TO-can is analyzed and optimized to achieve a uniform temperature distribution among the laser stripes and along the cavity direction. The temperature among the laser stripes varies by more than 5 K if the stripes are equally arranged, and can be reduced to less than 0.4 K if proper arrangement is designed. For conventional submount structure, the temperature variation along the cavity direction is as high as 7 K, while for an optimized trapezoid submount structure, the temperature varies only within 0.5 K.
文摘By etching a second-order grating directly into the Al-free optical waveguide region of a ridgewaveguide（RW） AlGaInAs/AlGaAs distributed feedback（DFB） laser diode,a front facet output power of 30mW is obtained at about 820nm with a single longitudinal mode. The Al-free grating surface permits the re-growth of a high-quality cladding layer that yields excellent device performance. The threshold current of these laser diodes is 57mA,and the slope efficiency is about 0.32mW/mA.
文摘Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model. A high temperature in the waveguide layer and a large temperature step between the regions under and outside the ridge are generated due to the poor thermal conductivity of the sapphire substrate and the large threshold current and voltage. The temperature step is thought to have a strong influence on the characteristics of the laser diodes. Time-resolved measurements of light-current curves,spectra, and the far-field pattern of the InGaN laser diodes under pulsed operation are performed. The results show that the thermal lensing effect improves the confinement of the higher order modes and leads to a lower threshold current and a higher slope efficiency of the device while the high temperature in the active layer results in a drastic decrease in the slope efficiency.
基金The National High Technology Research and Development Program of China(863 Program)(No.2006AA01Z284)
文摘This paper discusses the design of a 10 Gb/s laser diode driver implemented in SiGe BiCMOS technology. The laser diode driver is composed of an input buffer, a predriver circuit and an output current switch stage. With the current mode logic （CML） structure, the input buffer and the predriver circuit have the capability of transmission and amplification of high speed data. By employing MOS-HBT cascode structure as the output stage, the laser diode driver exhibits very high speed and efficiency working at the 10 Gb/s data rate. The core circuit is operated under a 3. 3 V supply, while the output stage is operated under 5.5 V for sufficient headroom across the laser diode. The chip occupies a die area of 600 μm × 800μm. Measurements on chip show clear electrical eye diagrams over 10 Gb/s, which can well meet the specifications defined by SDH STM64/SONET OC192 and a 10 Gb/s Ethemet eye mask. Under a 5. 5 V supply voltage, the maximum output swing is 3.0 V with a 50 12 load （the corresponding modulation current is 60 mA）, and the total power dissipation is 660 mW.
文摘We solve the single mode coupled rate equations by computer,simulate the behavior of a gain switch of an AlGaInP red light semiconductor laser diode,and find the characteristic of FWHM of pulses changing with the amplitude of modulation signal, the bias current, and the modulated frequency. On this basis, we conduct experiments. The experiment results accord with the simulations well.
文摘An accurate technique for measuring the frequency response of semiconductor laser diode chips is proposed and experimentally demonstrated.The effects of test jig parasites can be completely removed in the measurement by a new calibration method.In theory,the measuring range of the measurement system is only determined by the measuring range of the instruments network analyzer and photo detector.Diodes' bandwidth of 7 5GHz and 10GHz is measured.The results reveal that the method is feasible and comparing with other method,it is more precise and easier to use.
基金This work was supported by the National Key R&D Program of China(Grant Nos.2018YFB0406903,2017YFB0405001,2016YFB0400803 and 2016YFB0401801)the Science Challenge Project(Grant No.TZ2016003)+5 种基金the National Natural Science Foundation of China(Grant Nos.62034008,62074142,62074140,61974162,61904172,and 61874175)the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2019115)Beijing Nova Program(Grant No.202093)Beijing Municipal Science and Technology Project(Grant No.Z161100002116037)Jiangsu Institute of Advanced Semiconductors(IASEMI 2020-CRP-02)Young Elite Scientists Sponsorship Program by CAST.
文摘In this work,we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode(LD),and its stimulated emission wavelength is around 442 nm.The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition(MOCVD),and the width and length of the ridge waveguide structure are 30 and 1200μm,respectively.The threshold current is about 400 mA,and corresponding threshold current density is 1.1 kA/cm2.
