采用溶胶-凝胶法制备了沉积在加入了LNO种子层Pt/Ti/Si O2/Si衬底上的Bi3.15Nd0.85Ti3O12(BNT)铁电薄膜,研究了LNO种子层对BNT薄膜性能的影响.XRD结果表明。XRD结果表明具有La Ni O3缓冲层的BNT薄膜仍为随机取向,且以(117)峰为最强,电...采用溶胶-凝胶法制备了沉积在加入了LNO种子层Pt/Ti/Si O2/Si衬底上的Bi3.15Nd0.85Ti3O12(BNT)铁电薄膜,研究了LNO种子层对BNT薄膜性能的影响.XRD结果表明。XRD结果表明具有La Ni O3缓冲层的BNT薄膜仍为随机取向,且以(117)峰为最强,电滞回线形状也较好,在电压为15 V时剩余极化值Pr为25.5μc/cm2;制得的薄膜表面致密,颗粒大小均匀,粒径在100~150 nm之间;添加了La Ni O3缓冲层之后,BNT薄膜的疲劳特性和漏电流密度得到了很大的改善。展开更多
PbZr0.53Ti0.47O3 (PZT) ferroelectric thin films were deposited on LaNiO3 (LNO) by sol-gel method. The PbTiO3 (PT) seed layer was depos-ited between the LNO buffer layer and stainless steel (SS) substrate, which effect...PbZr0.53Ti0.47O3 (PZT) ferroelectric thin films were deposited on LaNiO3 (LNO) by sol-gel method. The PbTiO3 (PT) seed layer was depos-ited between the LNO buffer layer and stainless steel (SS) substrate, which effectively decreased the annealing temperature of LNO layer from 750 C to 650 C. X-ray diffraction (XRD) reveals that LNO layers with PT layer crystallize into a perovskite phase on annealing at 650 C for 10 min. PZT deposited on LNO buffer layer with PT seed layer exhibits good ferroelectric property.展开更多
Cobalt-free LiNiO_(2)(LNO)is considered a promising cathode for its high energy density and costeffectiveness.However,its structural instability under deep delithiation severely limits practical application in nextgen...Cobalt-free LiNiO_(2)(LNO)is considered a promising cathode for its high energy density and costeffectiveness.However,its structural instability under deep delithiation severely limits practical application in nextgeneration batteries.Herein,we propose a high-valence Mo6+doping strategy to simultaneously improve mechanical robustness and electrochemical stability.By stabilizing intergranular interfaces,this method effectively suppresses mechanical degradation induced by lattice strain under deep delithiation.The modified cathode exhibits exceptional electrochemical performance,achieving a specific capacity of 234 mAh·g^(-1)at 0.1 C with 83.4% retention over 100 cycles at 45℃ in lithium-ion batteries(LIBs).Notably,it maintains comparable efficacy in all-solid-state batteries(ASSBs),delivering 239 mAh·g^(-1)at 0.05 C and 82.8% retention after 300 cycles.Density functional theory(DFT)calculations demonstrate a pronounced rise in oxygen vacancy formation energy,increasing from 1.42 to 3.27 eV.These findings offer valuable insights into overcoming the kinetic performance limitations of cobalt-free LNO under deep delithiation conditions.展开更多
There is an urgent demand to explore new approaches of improving the electric breakdown strength of the ferroelectric thin-film capacitor without the degradation of the high dielectric constant.In this work,LaNiO_(3)/...There is an urgent demand to explore new approaches of improving the electric breakdown strength of the ferroelectric thin-film capacitor without the degradation of the high dielectric constant.In this work,LaNiO_(3)/Ba_(0.67)Sr_(0.33)TiO_(3)(LNO/BST) thin film and SrTiO_(3)(STO)/LNO/BST/SrTiO_(3)(STO) were prepared by using radio frequency(RF) magnetron sputtering technique and ultrathin STO insulator layers were inserted between the LNO/BST and metal electrodes(Au or Pt) to improve the electric breakdown strength and the leakage current of the LNO/BST thin film.X-ray diffraction(XRD) and scanning electron microscopy(SEM) investigations revealed that these multilayer thin films show compact,smooth and uniform morphologies.The leakage current density of STO/LNO/BST/STO thin film was decreased by one order of magnitude and breakdown strength of STO/LNO/BST/STO thin film was enhanced from 0.72 to 1.26 MV-cm-1compared with that of LNO/BST thin film.Moreover,the dielectric constant of the STO/LNO/BST/STO thin film keeps at the same level as that of LNO/BST thin film,and dielectric loss of the STO/LNO/BST/STO thin film was decreased slightly compared with that of LNO/BST thin film.展开更多
Highly oriented（00l）（La_（0.26）Bi_（0.74））_2Ti_4O_（11 ）thin films are deposited on（100） SrTiO_（3 ）substrates using the pulsed laser deposition technique.The grains form a texture of bar-like arrays along S...Highly oriented（00l）（La_（0.26）Bi_（0.74））_2Ti_4O_（11 ）thin films are deposited on（100） SrTiO_（3 ）substrates using the pulsed laser deposition technique.The grains form a texture of bar-like arrays along Sr Ti O_3110directions for the film thickness above 350 nm,in contrast to spherical grains for the reduced film thickness below 220 nm.X-ray diffraction patterns show that the highly ordered bar-like grains are the ensemble of two lattice-matched monoclinic（La,Bi）_4Ti_3O_（12 ）and TiO_（2 ）components above a critical film thickness.Otherwise,the phase decomposes into the random mixture of Bi_2Ti_2O_（7 ）and Bi_4Ti_3O_（4 ）spherical grains in thinner films.The critical thickness can increase up to 440 nm as the films are deposited on LaNiO_3-buffered SrTiO_（3 ）substrates.The electrical measurements show the dielectric enhancement of the multi-components,and comprehensive charge injection into interfacial traps between（La,Bi）_4Ti_3O_（12 ）and TiO_（2 ）components occurs under the application of a threshold voltage for the realization of high-charge storage.展开更多
文摘采用溶胶-凝胶法制备了沉积在加入了LNO种子层Pt/Ti/Si O2/Si衬底上的Bi3.15Nd0.85Ti3O12(BNT)铁电薄膜,研究了LNO种子层对BNT薄膜性能的影响.XRD结果表明。XRD结果表明具有La Ni O3缓冲层的BNT薄膜仍为随机取向,且以(117)峰为最强,电滞回线形状也较好,在电压为15 V时剩余极化值Pr为25.5μc/cm2;制得的薄膜表面致密,颗粒大小均匀,粒径在100~150 nm之间;添加了La Ni O3缓冲层之后,BNT薄膜的疲劳特性和漏电流密度得到了很大的改善。
基金supported by the National Natural Science Foundation of China (No. 50872080)Shanghai Special Foundation of Nanotechnology (No. 1052nm07300)+1 种基金Shanghai Education Development Foundation (No. 08SG41)Shanghai Leading Academic Disciplines (No. S30107)
文摘PbZr0.53Ti0.47O3 (PZT) ferroelectric thin films were deposited on LaNiO3 (LNO) by sol-gel method. The PbTiO3 (PT) seed layer was depos-ited between the LNO buffer layer and stainless steel (SS) substrate, which effectively decreased the annealing temperature of LNO layer from 750 C to 650 C. X-ray diffraction (XRD) reveals that LNO layers with PT layer crystallize into a perovskite phase on annealing at 650 C for 10 min. PZT deposited on LNO buffer layer with PT seed layer exhibits good ferroelectric property.
基金the Guangxi New Energy Vehicle Laboratory Special Project(No.GuikeAA23062079)the Special Project for Central Guidance of Local Science and Technology Development in Sichuan Province(No.2024ZYD0302).
文摘Cobalt-free LiNiO_(2)(LNO)is considered a promising cathode for its high energy density and costeffectiveness.However,its structural instability under deep delithiation severely limits practical application in nextgeneration batteries.Herein,we propose a high-valence Mo6+doping strategy to simultaneously improve mechanical robustness and electrochemical stability.By stabilizing intergranular interfaces,this method effectively suppresses mechanical degradation induced by lattice strain under deep delithiation.The modified cathode exhibits exceptional electrochemical performance,achieving a specific capacity of 234 mAh·g^(-1)at 0.1 C with 83.4% retention over 100 cycles at 45℃ in lithium-ion batteries(LIBs).Notably,it maintains comparable efficacy in all-solid-state batteries(ASSBs),delivering 239 mAh·g^(-1)at 0.05 C and 82.8% retention after 300 cycles.Density functional theory(DFT)calculations demonstrate a pronounced rise in oxygen vacancy formation energy,increasing from 1.42 to 3.27 eV.These findings offer valuable insights into overcoming the kinetic performance limitations of cobalt-free LNO under deep delithiation conditions.
基金financially supported by the National Natural Science Foundation of China(Nos.u1601208,51802204)。
文摘There is an urgent demand to explore new approaches of improving the electric breakdown strength of the ferroelectric thin-film capacitor without the degradation of the high dielectric constant.In this work,LaNiO_(3)/Ba_(0.67)Sr_(0.33)TiO_(3)(LNO/BST) thin film and SrTiO_(3)(STO)/LNO/BST/SrTiO_(3)(STO) were prepared by using radio frequency(RF) magnetron sputtering technique and ultrathin STO insulator layers were inserted between the LNO/BST and metal electrodes(Au or Pt) to improve the electric breakdown strength and the leakage current of the LNO/BST thin film.X-ray diffraction(XRD) and scanning electron microscopy(SEM) investigations revealed that these multilayer thin films show compact,smooth and uniform morphologies.The leakage current density of STO/LNO/BST/STO thin film was decreased by one order of magnitude and breakdown strength of STO/LNO/BST/STO thin film was enhanced from 0.72 to 1.26 MV-cm-1compared with that of LNO/BST thin film.Moreover,the dielectric constant of the STO/LNO/BST/STO thin film keeps at the same level as that of LNO/BST thin film,and dielectric loss of the STO/LNO/BST/STO thin film was decreased slightly compared with that of LNO/BST thin film.
基金Supported by the Basic Research Project of Shanghai Science and Technology Innovation Action under Grant No 17JC1400300the National Key Basic Research Program of China under Grant No 2014CB921004+1 种基金the National Natural Science Foundation of China under Grant No 61674044the Program of Shanghai Subject Chief Scientist under Grant No 17XD1400800
文摘Highly oriented（00l）（La_（0.26）Bi_（0.74））_2Ti_4O_（11 ）thin films are deposited on（100） SrTiO_（3 ）substrates using the pulsed laser deposition technique.The grains form a texture of bar-like arrays along Sr Ti O_3110directions for the film thickness above 350 nm,in contrast to spherical grains for the reduced film thickness below 220 nm.X-ray diffraction patterns show that the highly ordered bar-like grains are the ensemble of two lattice-matched monoclinic（La,Bi）_4Ti_3O_（12 ）and TiO_（2 ）components above a critical film thickness.Otherwise,the phase decomposes into the random mixture of Bi_2Ti_2O_（7 ）and Bi_4Ti_3O_（4 ）spherical grains in thinner films.The critical thickness can increase up to 440 nm as the films are deposited on LaNiO_3-buffered SrTiO_（3 ）substrates.The electrical measurements show the dielectric enhancement of the multi-components,and comprehensive charge injection into interfacial traps between（La,Bi）_4Ti_3O_（12 ）and TiO_（2 ）components occurs under the application of a threshold voltage for the realization of high-charge storage.
