结合器件版图,通过对2 k SRAM存储单元和外围电路进行单粒子效应激光微束辐照,获得SRAM器件的单粒子翻转敏感区域,测定了不同敏感区域单粒子翻转的激光能量阈值和等效LET阈值,并对SRAM器件的单粒子闭锁敏感度进行测试。结果表明,存储单...结合器件版图,通过对2 k SRAM存储单元和外围电路进行单粒子效应激光微束辐照,获得SRAM器件的单粒子翻转敏感区域,测定了不同敏感区域单粒子翻转的激光能量阈值和等效LET阈值,并对SRAM器件的单粒子闭锁敏感度进行测试。结果表明,存储单元中截止N管漏区、截止P管漏区、对应门控管漏区是单粒子翻转的敏感区域;实验中没有测到该器件发生单粒子闭锁现象,表明采用外延工艺以及源漏接触、版图布局调整等设计对器件抗单粒子闭锁加固是十分有效的。展开更多
Existing standards show a clear discrepancy in the specification of the maximum proton energy for qualified ground-based evaluation of single-event effects,which can range from 180 to 500 MeV. This work finds that the...Existing standards show a clear discrepancy in the specification of the maximum proton energy for qualified ground-based evaluation of single-event effects,which can range from 180 to 500 MeV. This work finds that the threshold linear energy transfer of a tested device is a critical parameter for determining the maximum proton energy. The inner mechanisms are further revealed. Highenergy deposition events(>10 MeV) in sensitive volumes are attributed to the interaction between protons and the tungsten vias in the metallization layers.展开更多
文摘结合器件版图,通过对2 k SRAM存储单元和外围电路进行单粒子效应激光微束辐照,获得SRAM器件的单粒子翻转敏感区域,测定了不同敏感区域单粒子翻转的激光能量阈值和等效LET阈值,并对SRAM器件的单粒子闭锁敏感度进行测试。结果表明,存储单元中截止N管漏区、截止P管漏区、对应门控管漏区是单粒子翻转的敏感区域;实验中没有测到该器件发生单粒子闭锁现象,表明采用外延工艺以及源漏接触、版图布局调整等设计对器件抗单粒子闭锁加固是十分有效的。
基金supported by the National Natural Science Foundation of China(No.11505033)the Science and Technology Research Project of Guangdong,China(Nos.2015B090901048 and 2017B090901068)the Science and Technology Plan Project of Guangzhou,China(No.201707010186)
文摘Existing standards show a clear discrepancy in the specification of the maximum proton energy for qualified ground-based evaluation of single-event effects,which can range from 180 to 500 MeV. This work finds that the threshold linear energy transfer of a tested device is a critical parameter for determining the maximum proton energy. The inner mechanisms are further revealed. Highenergy deposition events(>10 MeV) in sensitive volumes are attributed to the interaction between protons and the tungsten vias in the metallization layers.
