室温短波碲镉汞焦平面技术在军事与航天工业上的应用越来越广泛,列阵中探测器的尺寸正不断减小,这使得常规工艺形成的光伏探测器,其有效光敏面面积扩大的问题越来越突出.我们利用激光诱导电流 (LBIC)检测系统测试了室温短波碲镉汞n on ...室温短波碲镉汞焦平面技术在军事与航天工业上的应用越来越广泛,列阵中探测器的尺寸正不断减小,这使得常规工艺形成的光伏探测器,其有效光敏面面积扩大的问题越来越突出.我们利用激光诱导电流 (LBIC)检测系统测试了室温短波碲镉汞n on p芯片的光响应分布,证实了有效光敏面扩大的存在.从实验结果看,结区的侧向扩散收集效应是造成目前常规工艺形成的光伏器件光敏面面积扩大的主要因素.展开更多
To suppress the extension of the photo-sensitive area of a planar-type InGaAs detector, the structure of the detector was modified, and the small-diffusion-area diffusion method, circle-type covering contact and guard...To suppress the extension of the photo-sensitive area of a planar-type InGaAs detector, the structure of the detector was modified, and the small-diffusion-area diffusion method, circle-type covering contact and guard-ring were introduced. The laser-beam-induced-current （LBIC） technique was used to study the photo responsive characteristics of the photo-sensitive area of different detector structures. It was indicated that, by modifying the size of the diffusion area, the width of the circle-type covering contact, the distance between the guard-ring and the photo-sensitive area and the working status of the guard-ring, extension of the photo-sensitive area could be effectively suppressed, and the detector photo-sensitive area could be exactly defined.展开更多
The effect of de-trapping on the carrier transport process in the CdZ＇nTe detector is studied by laser beam-induced transient current （LBIC） measurement. Trapping time, de-trapping time, and mobility for electrons ...The effect of de-trapping on the carrier transport process in the CdZ＇nTe detector is studied by laser beam-induced transient current （LBIC） measurement. Trapping time, de-trapping time, and mobility for electrons are determined directly from transient waveforms under various bias voltages. The results suggest that an electric field strengthens the capture and emission effects in trap center, which is associated with field-assisted capture and the Poole-Frenkel effect, respectively. The electron mobility is calculated to be 950 cm2/V-s and the corresponding electron mobility-lifetime product is found to be 1.32 × 10-3 cm2/V by a modified Hecht equation with considering the surface recombination effect. It is concluded that the trapping time and de-trapping time obtained from LBIC measurement provide direct information concerning the transport process.展开更多
The polarization effect introduced by electric field deformation is the most important bottleneck of CdZnTe detector in x-ray imaging. Currently, most of studies focus on electric field deformation caused by trapped c...The polarization effect introduced by electric field deformation is the most important bottleneck of CdZnTe detector in x-ray imaging. Currently, most of studies focus on electric field deformation caused by trapped carriers;the perturbation of electric field due to drifting carriers has been rarely reported. In this study, the effect of transient space-charge perturbation on carrier transport in a CdZnTe semiconductor is evaluated by using the laser-beam-induced current(LBIC) technique.Cusps appear in the current curves of CdZnTe detectors with different carrier transport performances under intense excitation, indicating the deformation of electric field. The current signals under different excitations are compared. The results suggest that with the increase of excitation, the amplitude of cusp increases and the electron transient time gradually decreases. The distortion in electric field is independent of carrier transport performance of detector. Transient space-charge perturbation is responsible for the pulse shape and affects the carrier transport process.展开更多
文摘室温短波碲镉汞焦平面技术在军事与航天工业上的应用越来越广泛,列阵中探测器的尺寸正不断减小,这使得常规工艺形成的光伏探测器,其有效光敏面面积扩大的问题越来越突出.我们利用激光诱导电流 (LBIC)检测系统测试了室温短波碲镉汞n on p芯片的光响应分布,证实了有效光敏面扩大的存在.从实验结果看,结区的侧向扩散收集效应是造成目前常规工艺形成的光伏器件光敏面面积扩大的主要因素.
基金supported by the Key Program ofthe National Natural Science Foundation of China(No.5063206)the Knowledge Innovation Program of the Chinese Academy of Sciences(Nos.C2-32,C2-50).
文摘To suppress the extension of the photo-sensitive area of a planar-type InGaAs detector, the structure of the detector was modified, and the small-diffusion-area diffusion method, circle-type covering contact and guard-ring were introduced. The laser-beam-induced-current （LBIC） technique was used to study the photo responsive characteristics of the photo-sensitive area of different detector structures. It was indicated that, by modifying the size of the diffusion area, the width of the circle-type covering contact, the distance between the guard-ring and the photo-sensitive area and the working status of the guard-ring, extension of the photo-sensitive area could be effectively suppressed, and the detector photo-sensitive area could be exactly defined.
基金Project supported by the National Instrumentation Program,China(Grant No.2011YQ040082)the National Natural Science Foundation of China(Grant Nos.61274081,51372205,and 51202197)+1 种基金the National 973 Project of China(Grant No.2011CB610400),the China Postdoctoral Science Foundation(Grant No.2014M550509)the 111 Project of China(Grant No.B08040)
文摘The effect of de-trapping on the carrier transport process in the CdZ＇nTe detector is studied by laser beam-induced transient current （LBIC） measurement. Trapping time, de-trapping time, and mobility for electrons are determined directly from transient waveforms under various bias voltages. The results suggest that an electric field strengthens the capture and emission effects in trap center, which is associated with field-assisted capture and the Poole-Frenkel effect, respectively. The electron mobility is calculated to be 950 cm2/V-s and the corresponding electron mobility-lifetime product is found to be 1.32 × 10-3 cm2/V by a modified Hecht equation with considering the surface recombination effect. It is concluded that the trapping time and de-trapping time obtained from LBIC measurement provide direct information concerning the transport process.
基金Project supported by the National Natural Science Foundation of China(Grant No.61874089)the Fund of MIIT(Grant No.MJ-2017-F-05)+2 种基金the 111 Project of China(Grant No.B08040)the NPU Foundation for Fundamental Research,Chinathe Research Found of the State Key Laboratory of Solidification Processing(NWPU),China
文摘The polarization effect introduced by electric field deformation is the most important bottleneck of CdZnTe detector in x-ray imaging. Currently, most of studies focus on electric field deformation caused by trapped carriers;the perturbation of electric field due to drifting carriers has been rarely reported. In this study, the effect of transient space-charge perturbation on carrier transport in a CdZnTe semiconductor is evaluated by using the laser-beam-induced current(LBIC) technique.Cusps appear in the current curves of CdZnTe detectors with different carrier transport performances under intense excitation, indicating the deformation of electric field. The current signals under different excitations are compared. The results suggest that with the increase of excitation, the amplitude of cusp increases and the electron transient time gradually decreases. The distortion in electric field is independent of carrier transport performance of detector. Transient space-charge perturbation is responsible for the pulse shape and affects the carrier transport process.
