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Mutagenic Effects of BM302:GO112 Induced by Low-Energy Ion Beam Implantation
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作者 赵世光 汤明礼 +4 位作者 王军 王陶 王顺昌 吴跃进 余增亮 《Plasma Science and Technology》 SCIE EI CAS CSCD 2007年第4期508-512,共5页
Mutant strains of GO112 and BM302 with a high 2-keto-L-gulonic acid (2KLG) transformation rate induced by ion beam implantation were separately and combinatorially compared with the original strains GO29 and BM80 to... Mutant strains of GO112 and BM302 with a high 2-keto-L-gulonic acid (2KLG) transformation rate induced by ion beam implantation were separately and combinatorially compared with the original strains GO29 and BM80 to study the mutagenic effects of ion beam implantation. Both the sole GOl12 and mixed BM302:GOl12 demonstrated improved SNDH activity and 2KLG yield compared to the original strains. The mutant combinations of BM302:GOl12 showed a longer stationary phase and higher biomass than BM80:GO29. The mutant BM302 exhibited a stronger capacity to maintain a stable pH environment at mixed fermentation with Gluconobacter oxydans (G. oxydans) for 2KLG transformation and facilitated the growth of G. oxydans compared with the original strain BM80. The promotive capacity to L-sorbosone dehydrogenase (L-SNDH) from the supernate of BM302 was 1.6-fold higher than that of BM80. Genes encoded SNDH in GO29 and GOl12 were amplified and sequenced, and mutations including three transitions (CG →TA, CG →TA, GC → AT) and one transversion (AT→ TA) were confirmed from GO29 to GOl12. The corresponding amino acid was changed as Leu →Phe, Arg → Gln and Asn → Lys. 展开更多
关键词 mutagenic effects of ion beam implantation BM302:GO112 physiological variation l-sorbosone dehydrogenase MUTATION
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