A method for reliability analysis of the competing failure with the probabilistic failure threshold value not the fixed threshold value is presented, which involves the random shocks and the degradation is independent...A method for reliability analysis of the competing failure with the probabilistic failure threshold value not the fixed threshold value is presented, which involves the random shocks and the degradation is independent and dependent respectively. Specifically, for the dependent condition, the effect due to the random shocks on the degradation is considered with a damage factor. In addition, the dependent competing failure model is applied to the reliability analysis of the k-out-of-n systems. Finally, two studied cases are presented to illustrate the proposed method, and the results show the proposed method is reasonable.展开更多
Resource sharing among peers is one of important application in Peer-to-Peer（P2P） network. Inexistenee of server makes P2P network to be a less trustable tool for property owners to distribute their resource. In ord...Resource sharing among peers is one of important application in Peer-to-Peer（P2P） network. Inexistenee of server makes P2P network to be a less trustable tool for property owners to distribute their resource. In order to protect intelligent property, reputation management strategy is adopted in many P2P network. As long as a P2P network reputation strategy is confirmed, application designer can employ a special detailed distribution scheme to fulfill content distribution within the net. Shmir （k, n） threshold scheme, for example, is an encryption scheme to enhance the distribution se curity of this kind of design. （k＊, n） threshold scheme is a new tool similar to Shmir scheme is proposed in this paper. The new scheme based on polynomial expansion and its security is decided by the one way function used in the secret distribution procedure. The scheme efficiency and its features as well as comparison between new and Shmir scheme are also discussed in this paper.展开更多
We investigate the influence of voltage drop across the lightly doped drain（LDD） region and the built-in potential on MOSFETs,and develop a threshold voltage model for high-k gate dielectric MOSFETs with fully overl...We investigate the influence of voltage drop across the lightly doped drain（LDD） region and the built-in potential on MOSFETs,and develop a threshold voltage model for high-k gate dielectric MOSFETs with fully overlapped LDD structures by solving the two-dimensional Poisson＇s equation in the silicon and gate dielectric layers.The model can predict the fringing-induced barrier lowering effect and the short channel effect.It is also valid for non-LDD MOSFETs.Based on this model,the relationship between threshold voltage roll-off and three parameters,channel length,drain voltage and gate dielectric permittivity,is investigated.Compared with the non-LDD MOSFET,the LDD MOSFET depends slightly on channel length,drain voltage,and gate dielectric permittivity.The model is verified at the end of the paper.展开更多
In this paper the influences of the metal-gate and high-k/SiO 2 /Si stacked structure on the metal-oxide-semiconductor field-effect transistor（MOSFET） are investigated.The flat-band voltage is revised by considering...In this paper the influences of the metal-gate and high-k/SiO 2 /Si stacked structure on the metal-oxide-semiconductor field-effect transistor（MOSFET） are investigated.The flat-band voltage is revised by considering the influences of stacked structure and metal-semiconductor work function fluctuation.The two-dimensional Poisson＇s equation of potential distribution is presented.A threshold voltage analytical model for metal-gate/high-k/SiO 2 /Si stacked MOSFETs is developed by solving these Poisson＇s equations using the boundary conditions.The model is verified by a two-dimensional device simulator,which provides the basic design guidance for metal-gate/high-k/SiO 2 /Si stacked MOSFETs.展开更多
基金the Special Research Fund for the National Natural Science Foundation of China(No.11272082)the Fundamental Research Funds for the Central Universities(No.E022050205)the Open Research Fund of Key Laboratory of Fluid and Power Machinery of Xihua University(No.szjj2013-03)
文摘A method for reliability analysis of the competing failure with the probabilistic failure threshold value not the fixed threshold value is presented, which involves the random shocks and the degradation is independent and dependent respectively. Specifically, for the dependent condition, the effect due to the random shocks on the degradation is considered with a damage factor. In addition, the dependent competing failure model is applied to the reliability analysis of the k-out-of-n systems. Finally, two studied cases are presented to illustrate the proposed method, and the results show the proposed method is reasonable.
基金Supported by the National Natural Science Foun-dation of China (60473072)
文摘Resource sharing among peers is one of important application in Peer-to-Peer（P2P） network. Inexistenee of server makes P2P network to be a less trustable tool for property owners to distribute their resource. In order to protect intelligent property, reputation management strategy is adopted in many P2P network. As long as a P2P network reputation strategy is confirmed, application designer can employ a special detailed distribution scheme to fulfill content distribution within the net. Shmir （k, n） threshold scheme, for example, is an encryption scheme to enhance the distribution se curity of this kind of design. （k＊, n） threshold scheme is a new tool similar to Shmir scheme is proposed in this paper. The new scheme based on polynomial expansion and its security is decided by the one way function used in the secret distribution procedure. The scheme efficiency and its features as well as comparison between new and Shmir scheme are also discussed in this paper.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60936005 and 61076097)the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China(Grant No.708083)the Fundamental Research Funds for the Central Universities of China(Grant No.20110203110012)
文摘We investigate the influence of voltage drop across the lightly doped drain（LDD） region and the built-in potential on MOSFETs,and develop a threshold voltage model for high-k gate dielectric MOSFETs with fully overlapped LDD structures by solving the two-dimensional Poisson＇s equation in the silicon and gate dielectric layers.The model can predict the fringing-induced barrier lowering effect and the short channel effect.It is also valid for non-LDD MOSFETs.Based on this model,the relationship between threshold voltage roll-off and three parameters,channel length,drain voltage and gate dielectric permittivity,is investigated.Compared with the non-LDD MOSFET,the LDD MOSFET depends slightly on channel length,drain voltage,and gate dielectric permittivity.The model is verified at the end of the paper.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60936005 and 61076097)the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China (Grant No. 708083)the Fundamental Research Funds for the Central Universities (Grant No. 20110203110012)
文摘In this paper the influences of the metal-gate and high-k/SiO 2 /Si stacked structure on the metal-oxide-semiconductor field-effect transistor（MOSFET） are investigated.The flat-band voltage is revised by considering the influences of stacked structure and metal-semiconductor work function fluctuation.The two-dimensional Poisson＇s equation of potential distribution is presented.A threshold voltage analytical model for metal-gate/high-k/SiO 2 /Si stacked MOSFETs is developed by solving these Poisson＇s equations using the boundary conditions.The model is verified by a two-dimensional device simulator,which provides the basic design guidance for metal-gate/high-k/SiO 2 /Si stacked MOSFETs.
