Silicon carbide(SiC)junction barrier Schottky(JBS)diode has been widely used in power electronic systems due to its excellent physical characteristics and electrical performance,and the structural design of its source...Silicon carbide(SiC)junction barrier Schottky(JBS)diode has been widely used in power electronic systems due to its excellent physical characteristics and electrical performance,and the structural design of its source area has a particularly significant impact on the performance.This study provides a comparative analysis of the SiC JBS diode performance of different hexagonal structures,aiming to provide theoretical support and practical guidance for the optimization of JBS diode performance.Through theoretical derivation,experimental verification and data processing,the paper deeply analyzes the influence of hexagonal structure on JBS diode current distribution and breakdown voltage,and proposes a targeted optimization strategy.展开更多
文摘Silicon carbide(SiC)junction barrier Schottky(JBS)diode has been widely used in power electronic systems due to its excellent physical characteristics and electrical performance,and the structural design of its source area has a particularly significant impact on the performance.This study provides a comparative analysis of the SiC JBS diode performance of different hexagonal structures,aiming to provide theoretical support and practical guidance for the optimization of JBS diode performance.Through theoretical derivation,experimental verification and data processing,the paper deeply analyzes the influence of hexagonal structure on JBS diode current distribution and breakdown voltage,and proposes a targeted optimization strategy.
