In group-living animals,chronic juvenile social isolation stress(SIS)can profoundly affect behavior and neuroendocrine regulation.However,its impact on social behavior in avian species,particularly regarding sexspecif...In group-living animals,chronic juvenile social isolation stress(SIS)can profoundly affect behavior and neuroendocrine regulation.However,its impact on social behavior in avian species,particularly regarding sexspecific neural circuit differences,remains underexplored.This study focused on zebra finches,a species known for its social clustering and cognitive abilities,to elucidate these influences.Results indicated that SIS significantly increased plasma corticosterone levels in females but not in males,suggesting a heightened stress response and susceptibility in females.Additionally,SIS disrupted sociality and flocking behavior in both sexes,with more severe impairments in social recognition observed in females.Mesotocin(MT)levels in the lateral septum of both sexes and in the ventromedial hypothalamus of females were found to mediate the SIS effect,while vasotocin(VT)levels within the social behavior network remained unchanged.Pharmacological interventions confirmed the critical role of MT in reversing SIS-induced impairments in sociality,flocking behavior,and social recognition,particularly in females.These findings highlight unique nucleus-and sex-dependent variations in MT and VT regulation,providing novel insights into the mechanisms governing avian social behavior.This study advances our understanding of the independent evolutionary pathways of neural circuits and neuroendocrine systems that modulate social behaviors across different taxonomic groups.展开更多
Silicon resonant pressure sensors are widely used in aerospace and industry due to their high accuracy,good linearity,and long-term stability.Due to the stress and signal processing limitation,its accuracy is difficul...Silicon resonant pressure sensors are widely used in aerospace and industry due to their high accuracy,good linearity,and long-term stability.Due to the stress and signal processing limitation,its accuracy is difficult to meet the application requirements,and we can only search methods to approach this continuously.This research introduces a stress-isolated structure and a processing method of frequency signal to enhance the index.The stress-isolated structure separates the press-sensor from the printed circuit board by nested bonding for plates with silica gel.It minimizes the transmitted stress but no affect on the electrical connection.The analysis algorithm of frequency based on a given waveform number instead of a given time improves the analytical accuracy of frequency and pressure.By redesigning the interrupt timing control strategy in Microcontroller unit,it addresses sudden jumps of frequency signal.The proposed technique compared to similar schemes,tested on a resonant pressure sensor at a temperature condition of-45℃to 75℃and barometric condition of 3.5 kPa to 110 kPa,reduces the effect of stress effectively,and enhances to 0.01Hz in accuracy of frequency.More importantly there is no sudden jump in frequency signal.The pressure accuracy is increased by 3.5 times to 0.0145%after calibrating.Over-all,the advised method meets the requirement of high accuracy and promotes applications in the aerospace field.展开更多
The shallow trench isolation （STI） induced mechanical stress significantly affects the CMOS device off-state leakage behaviour. In this paper we designed two types of devices to investigate this effect, and all lea...The shallow trench isolation （STI） induced mechanical stress significantly affects the CMOS device off-state leakage behaviour. In this paper we designed two types of devices to investigate this effect, and all leakage components, including sub-threshold leakage （Isub）, gate-induced-drain-leakage （/GIDL）, gate edge-direct-tunnelling leakage （IEDT） and band-to-band-tunnelling leakage （IBTBT） were analysed. For NMOS, Isub can be reduced due to the mechanical stress induced higher boron concentration in well region. However, the GIDL component increases simultaneously as a result of the high well concentration induced drain-to-well depletion layer narrowing as well as the shrinkage of the energy gap. For PMOS, the only mechanical stress effect on leakage current is the energy gap narrowing induced GIDL increase.展开更多
基金supported by the National Natural Science Foundation of China (31971413) to D.L.Hebei Natural Science Foundation (C2023205016)Foundation of Hebei Normal University(L2020B21) to L.W。
文摘In group-living animals,chronic juvenile social isolation stress(SIS)can profoundly affect behavior and neuroendocrine regulation.However,its impact on social behavior in avian species,particularly regarding sexspecific neural circuit differences,remains underexplored.This study focused on zebra finches,a species known for its social clustering and cognitive abilities,to elucidate these influences.Results indicated that SIS significantly increased plasma corticosterone levels in females but not in males,suggesting a heightened stress response and susceptibility in females.Additionally,SIS disrupted sociality and flocking behavior in both sexes,with more severe impairments in social recognition observed in females.Mesotocin(MT)levels in the lateral septum of both sexes and in the ventromedial hypothalamus of females were found to mediate the SIS effect,while vasotocin(VT)levels within the social behavior network remained unchanged.Pharmacological interventions confirmed the critical role of MT in reversing SIS-induced impairments in sociality,flocking behavior,and social recognition,particularly in females.These findings highlight unique nucleus-and sex-dependent variations in MT and VT regulation,providing novel insights into the mechanisms governing avian social behavior.This study advances our understanding of the independent evolutionary pathways of neural circuits and neuroendocrine systems that modulate social behaviors across different taxonomic groups.
文摘Silicon resonant pressure sensors are widely used in aerospace and industry due to their high accuracy,good linearity,and long-term stability.Due to the stress and signal processing limitation,its accuracy is difficult to meet the application requirements,and we can only search methods to approach this continuously.This research introduces a stress-isolated structure and a processing method of frequency signal to enhance the index.The stress-isolated structure separates the press-sensor from the printed circuit board by nested bonding for plates with silica gel.It minimizes the transmitted stress but no affect on the electrical connection.The analysis algorithm of frequency based on a given waveform number instead of a given time improves the analytical accuracy of frequency and pressure.By redesigning the interrupt timing control strategy in Microcontroller unit,it addresses sudden jumps of frequency signal.The proposed technique compared to similar schemes,tested on a resonant pressure sensor at a temperature condition of-45℃to 75℃and barometric condition of 3.5 kPa to 110 kPa,reduces the effect of stress effectively,and enhances to 0.01Hz in accuracy of frequency.More importantly there is no sudden jump in frequency signal.The pressure accuracy is increased by 3.5 times to 0.0145%after calibrating.Over-all,the advised method meets the requirement of high accuracy and promotes applications in the aerospace field.
文摘The shallow trench isolation （STI） induced mechanical stress significantly affects the CMOS device off-state leakage behaviour. In this paper we designed two types of devices to investigate this effect, and all leakage components, including sub-threshold leakage （Isub）, gate-induced-drain-leakage （/GIDL）, gate edge-direct-tunnelling leakage （IEDT） and band-to-band-tunnelling leakage （IBTBT） were analysed. For NMOS, Isub can be reduced due to the mechanical stress induced higher boron concentration in well region. However, the GIDL component increases simultaneously as a result of the high well concentration induced drain-to-well depletion layer narrowing as well as the shrinkage of the energy gap. For PMOS, the only mechanical stress effect on leakage current is the energy gap narrowing induced GIDL increase.
