The inte rmixed phase is important in effective charge separation due to the formation of cascaded energy landscape between intermixed phase and pure phases in polymer/fullerene solar cells.However,the quantitative re...The inte rmixed phase is important in effective charge separation due to the formation of cascaded energy landscape between intermixed phase and pure phases in polymer/fullerene solar cells.However,the quantitative relationship between the charge separation and the content of intermixed phase has not been investigated clearly so far.Here,we proposed to tune the content of the polymer/PC71BM intermixed phase by cha nging the polymer solution conformatio n.Poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene](PBTTT)and PC71 BM was selected as a model system.The organization of the PBTTT in solution promotes the formation of ordered aggregates as aging time increases,the interdigitation of side-chains restricts the intercalation of PC71 BM.Therefore,the intermixed phase formed by intercalation PC71 BM to PBTTT side chain can be controlled.When the aging time increasing from 0 to 80 min,the extent of inte rcalation gradually from almost complete intercalated phase to almost non-intercalated.As the content of intercalated phase is about 11%,the charge dissociation is most efficie nt and short circuit current(Jsc)increased from 1.60 mA/cm2 to 4.94 mA/cm2,leading to optimized device performance.展开更多
This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing （QWI） for the first time in China's Mainland. The wavelength tuning range covers 33nm and the output p...This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing （QWI） for the first time in China's Mainland. The wavelength tuning range covers 33nm and the output power reaches 10mW with an SOA current of 50mA. The device can work at available channels with SMSR over 35dB.展开更多
A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spotsize converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymm...A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spotsize converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology. A 1550-1600nm lossless operation with a high DC extinction ratio of 25dB and more than 10GHz 3dB bandwidth are successfully achieved. The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3°× 18.0°, respectively, resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.展开更多
An integratable distributed Bragg reflector laser is fabricated by low energy ion implantation induced quantum well intermixing.A 4 6nm quasi continuous wavelength tuning range is achieved by controlling phase curr...An integratable distributed Bragg reflector laser is fabricated by low energy ion implantation induced quantum well intermixing.A 4 6nm quasi continuous wavelength tuning range is achieved by controlling phase current and grating current simultaneously,and side mode suppression ratio maintains over 30dB throughout the tuning range except a few mode jump points.展开更多
Experiment on quantum well intermixing (QWI) of InGaAsP QWs by impurity free vacancy diffusion (IFVD) using SiO 2 encapsulation is reported.A maximum band gap wavelength blue shift as large as 200nm is realized.Furt...Experiment on quantum well intermixing (QWI) of InGaAsP QWs by impurity free vacancy diffusion (IFVD) using SiO 2 encapsulation is reported.A maximum band gap wavelength blue shift as large as 200nm is realized.Furthermore,an FP laser blue shifted 21nm by QWI is fabricated with characteristics comparable with the as grown one.展开更多
The two-section tunable ridge waveguide distribu ted Bragg reflector (DBR) laser fabricated by the selective intermixing of an InGaAsP-InGaAsP quantum well structure is presented.The threshold current of the laser is ...The two-section tunable ridge waveguide distribu ted Bragg reflector (DBR) laser fabricated by the selective intermixing of an InGaAsP-InGaAsP quantum well structure is presented.The threshold current of the laser is 51mA.The tunable range of the laser is 4.6nm,and the side mode suppress ion ratio (SMSR) is 40dB.展开更多
We report a monolithic integrated dual-wavelength laser diode based on a distributed Bragg reflector （DBR） composite resonant cavity. The device consists of three sections, a DBR grating section, a passive phase sec...We report a monolithic integrated dual-wavelength laser diode based on a distributed Bragg reflector （DBR） composite resonant cavity. The device consists of three sections, a DBR grating section, a passive phase section, and an active gain section. The gain section facet is cleaved to work as a laser cavity mirror. The other laser mirror is the DBR grating, which also functions as a wavelength filter and can control the number of wavelengths involved in the laser action. The reflection bandwidth of the DBR grating is fabricated to have an appropriate value to make the device work at the dual-wavelength lasing state. We adopt the quantum well intermixing （QWI） technique to provide low-absorption loss grating and passive phase section in the fabrication process. By tuning the injection currents on the DBR and the gain sections, the device can generate 0.596 nm-spaced dual-wavelength lasing at room temperature.展开更多
The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the...The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the output power of 680 nm AlGaInP/GaInP quantum well red semiconductor lasers,Si-Si_(3)N_(4)composited dielectric layers are used to induce its quantum wells to be intermixed at the cavity surface to make a non-absorption window.Si with a thickness of 100 nm and Si_(3)N_(4)with a thickness of 100 nm were grown on the surface of the epitaxial wafer by magnetron sputtering and PECVD as diffusion source and driving source,respectively.Compared with traditional Si impurity induced quantum well intermixing,this paper realizes the blue shift of 54.8 nm in the nonabsorbent window region at a lower annealing temperature of 600 ℃ and annealing time of 10 min.Under this annealing condition,the wavelength of the gain luminescence region basically does not shift to short wavelength,and the surface morphology of the whole epitaxial wafer remains fine after annealing.The application of this process condition can reduce the difficulty of production and save cost,which provides an effective method for upcoming fabrication.展开更多
Renewable energy resources especially wind and solar energy are emerging as the modern power sources to electrify remote areas. The main reason behind their emergence is due to their environment-friendly behavior,unli...Renewable energy resources especially wind and solar energy are emerging as the modern power sources to electrify remote areas. The main reason behind their emergence is due to their environment-friendly behavior,unlimited availability and short period for replenishment over nonrenewable energy resources. Renewable energy resources are much better than nonrenewable energy resources, but the intermittency in renewable energy resources degrades the system performance. In order to overcome the intermittency, multiple hybrid system techniques were proposed in literature that can achieve suitable results but have disadvantages of complicated control structures and high implementation cost. Considering aforementioned shortcomings, a simple balancing approach is proposed to intermix solar and wind energy together so as to utilize the available energy from both sources at a given time.It is very common that solar farms are the dominating source of energy in daytime and summer, while wind farms are the dominating source of energy at night and in winter. The proposed approach delivers maximum possible power to the load by combining dominating and non-dominating resources all the time, hence mitigating the intermittency of individual resources. Compared with other approaches, the proposed approach offers key benefits with redundancy, simple design and low cost, which can be analyzed from simulation results.展开更多
Output power and reliability are the most important characteristic parameters of semiconductor lasers.However,catas-trophic optical damage(COD),which usually occurs on the cavity surface,will seriously damage the furt...Output power and reliability are the most important characteristic parameters of semiconductor lasers.However,catas-trophic optical damage(COD),which usually occurs on the cavity surface,will seriously damage the further improvement of the output power and affect the reliability.To improve the anti-optical disaster ability of the cavity surface,a non-absorption window(NAW)is adopted for the 915 nm InGaAsP/GaAsP single-quantum well semiconductor laser using quantum well mix-ing(QWI)induced by impurity-free vacancy.Both the principle and the process of point defect diffusion are described in detail in this paper.We also studied the effects of annealing temperature,annealing time,and the thickness of SiO_(2) film on the quan-tum well mixing in a semiconductor laser with a primary epitaxial structure,which is distinct from the previous structures.We found that when compared with the complete epitaxial structure,the blue shift of the semiconductor laser with the primary epi-taxial structure is larger under the same conditions.To obtain the appropriate blue shift window,the primary epitaxial struc-ture can use a lower annealing temperature and shorter annealing time.In addition,the process is less expensive.We also pro-vide references for upcoming device fabrication.展开更多
A method of QWI （ quantum well intermixing） realizing through plasma-enhanced chemical vapordepositiom （PECVD） SiO2 film following ion implantation was investigated. PECVD 200 mn SiO2 film after 160 keV phosphorus...A method of QWI （ quantum well intermixing） realizing through plasma-enhanced chemical vapordepositiom （PECVD） SiO2 film following ion implantation was investigated. PECVD 200 mn SiO2 film after 160 keV phosphorus（P） ion implantation was performed to induce InP-based multiple-quantum-well （MQW） laser structural intermixing, annealing process was carried out at 780 ℃ for 30 seconds under N2 flue, the blue shift ofphotoluminescenee （PL） peak related to implanted dose ： 1 × 10^11, 1 × 10^12, 1×10^13 ,3 × 10^13 , 7× 10^13 ion/ cm^2 is 22 nm, 65 nm, 104 nm, 109 nm, 101 nm, respectively. Under the same conditions, by comparing the blue shift of PL peak with P ion implantation only, slight differentiation between the two methods was observed, and results reveal that the defects in the implanting layers generated by ion implantation are much more than those in SiO2 film. So, the blue shift results mainly from ion implantation. However, SiO2 film also may promote the quantum well intermixing.展开更多
A quantum well intermixing（QW1） investigation on double quantum well（DQW） structure with two different emitting wavelength caused by phosphorus ion implantation and following rapid thermal annealing （RTA） was ca...A quantum well intermixing（QW1） investigation on double quantum well（DQW） structure with two different emitting wavelength caused by phosphorus ion implantation and following rapid thermal annealing （RTA） was carried out by means of photoluminescence（PL）. The ion implantation was performed at the energy of 120 keV with the dose ranging from 1 × 10^11cm^-2 to 1× 10^14cm^-2. The RTA was performed at the temperature of 700 ℃ for 30 s under pure nitrogen protection. The PL measurement implied that the band gap blue-shift from the upper well increases with the ion dose faster than that from lower well and the PL peaks from both QWs remained well separated under the lower dose implantation（-1 × 10^11cm^-2） indicating that the implant vacancy distribution affects the QWl. When the ion dose is over - 1 × 10^12cm^-2, the band gap blue-shift from both wells increases with the ion dose and finally the two peaks merge together as one peak indicating the ion implantation caused a total intermixing of both quantum wells.展开更多
We use the Galerkin approach and the finite-element method to numerically solve the effective-mass Schr¨odinger equation.The accuracy of the solution is explored as it varies with the range of the numerical domai...We use the Galerkin approach and the finite-element method to numerically solve the effective-mass Schr¨odinger equation.The accuracy of the solution is explored as it varies with the range of the numerical domain.The model potentials are those of interdiffused semiconductor quantum wells and axially symmetric quantum wires.Also,the model of a linear harmonic oscillator is considered for comparison reasons.It is demonstrated that the absolute error of the electron ground state energy level exhibits a minimum at a certain domain range,which is thus considered to be optimal.This range is found to depend on the number of mesh nodes N approximately as α_0 log_e^(α1)(α_2N),where the values of the constants α_0,α_1,and α_2are determined by fitting the numerical data.And the optimal range is found to be a weak function of the diffusion length.Moreover,it was demonstrated that a domain range adaptation to the optimal value leads to substantial improvement of accuracy of the solution of the Schr¨odinger equation.展开更多
The room-temperature(RT)bonding mechanisms of Ga As/Si O_(2)/Si and Ga As/Si heterointerfaces fabricated by surface-activated bonding(SAB)are investigated using a focused ion beam(FIB)system,cross-sectional scanning t...The room-temperature(RT)bonding mechanisms of Ga As/Si O_(2)/Si and Ga As/Si heterointerfaces fabricated by surface-activated bonding(SAB)are investigated using a focused ion beam(FIB)system,cross-sectional scanning transmission electron microscopy(TEM),energy dispersive x-ray spectroscopy(EDX)and scanning acoustic microscopy(SAM).According to the element distribution detected by TEM and EDX,it is found that an intermixing process occurs among different atoms at the heterointerface during the RT bonding process following the surface-activation treatment.The diffusion of atoms at the interface is enhanced by the point defects introduced by the process of surface activation.We can confirm that through the point defects,a strong heterointerface can be created at RT.The measured bonding energies of Ga As/Si O_(2)/Si and Ga As/Si wafers are 0.7 J/m^(2)and 0.6 J/m^(2).The surface-activation process can not only remove surface oxides and generate dangling bonds,but also enhance the atomic diffusivity at the interface.展开更多
Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been mono-lithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well in...Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been mono-lithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well intermixing method. Superior characteristics such as extinction ratio and temperature insensitivity have been demonstrated at wide temperature ranges.展开更多
基金partly supported by the National Natural Science Foundation of China(Nos. 5189071, 91833306, 51303177)the Strategic Priority Research Program of the Chinese Academy of Sciences(No. XDB12020300)
文摘The inte rmixed phase is important in effective charge separation due to the formation of cascaded energy landscape between intermixed phase and pure phases in polymer/fullerene solar cells.However,the quantitative relationship between the charge separation and the content of intermixed phase has not been investigated clearly so far.Here,we proposed to tune the content of the polymer/PC71BM intermixed phase by cha nging the polymer solution conformatio n.Poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene](PBTTT)and PC71 BM was selected as a model system.The organization of the PBTTT in solution promotes the formation of ordered aggregates as aging time increases,the interdigitation of side-chains restricts the intercalation of PC71 BM.Therefore,the intermixed phase formed by intercalation PC71 BM to PBTTT side chain can be controlled.When the aging time increasing from 0 to 80 min,the extent of inte rcalation gradually from almost complete intercalated phase to almost non-intercalated.As the content of intercalated phase is about 11%,the charge dissociation is most efficie nt and short circuit current(Jsc)increased from 1.60 mA/cm2 to 4.94 mA/cm2,leading to optimized device performance.
基金the National Natural Science Foundation of China(Nos.90401025,60736036,60706009,60777021)the State Key Development Program for Basic Research of China(Nos.2006CB604901,2006CB604902)the National High Technology Research and Development Program of China(Nos.2006AA01Z256,2007AA03Z419,2007AA03Z417)~~
文摘This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing （QWI） for the first time in China's Mainland. The wavelength tuning range covers 33nm and the output power reaches 10mW with an SOA current of 50mA. The device can work at available channels with SMSR over 35dB.
文摘A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spotsize converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology. A 1550-1600nm lossless operation with a high DC extinction ratio of 25dB and more than 10GHz 3dB bandwidth are successfully achieved. The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3°× 18.0°, respectively, resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.
文摘An integratable distributed Bragg reflector laser is fabricated by low energy ion implantation induced quantum well intermixing.A 4 6nm quasi continuous wavelength tuning range is achieved by controlling phase current and grating current simultaneously,and side mode suppression ratio maintains over 30dB throughout the tuning range except a few mode jump points.
文摘Experiment on quantum well intermixing (QWI) of InGaAsP QWs by impurity free vacancy diffusion (IFVD) using SiO 2 encapsulation is reported.A maximum band gap wavelength blue shift as large as 200nm is realized.Furthermore,an FP laser blue shifted 21nm by QWI is fabricated with characteristics comparable with the as grown one.
文摘The two-section tunable ridge waveguide distribu ted Bragg reflector (DBR) laser fabricated by the selective intermixing of an InGaAsP-InGaAsP quantum well structure is presented.The threshold current of the laser is 51mA.The tunable range of the laser is 4.6nm,and the side mode suppress ion ratio (SMSR) is 40dB.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60736036 and 61021003)the National Basic Research Program of China (Grant No. 2011CB301702)
文摘We report a monolithic integrated dual-wavelength laser diode based on a distributed Bragg reflector （DBR） composite resonant cavity. The device consists of three sections, a DBR grating section, a passive phase section, and an active gain section. The gain section facet is cleaved to work as a laser cavity mirror. The other laser mirror is the DBR grating, which also functions as a wavelength filter and can control the number of wavelengths involved in the laser action. The reflection bandwidth of the DBR grating is fabricated to have an appropriate value to make the device work at the dual-wavelength lasing state. We adopt the quantum well intermixing （QWI） technique to provide low-absorption loss grating and passive phase section in the fabrication process. By tuning the injection currents on the DBR and the gain sections, the device can generate 0.596 nm-spaced dual-wavelength lasing at room temperature.
基金supported by the National Natural Science Foundation of China(NNSFC)(Grant No.62174154).
文摘The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the output power of 680 nm AlGaInP/GaInP quantum well red semiconductor lasers,Si-Si_(3)N_(4)composited dielectric layers are used to induce its quantum wells to be intermixed at the cavity surface to make a non-absorption window.Si with a thickness of 100 nm and Si_(3)N_(4)with a thickness of 100 nm were grown on the surface of the epitaxial wafer by magnetron sputtering and PECVD as diffusion source and driving source,respectively.Compared with traditional Si impurity induced quantum well intermixing,this paper realizes the blue shift of 54.8 nm in the nonabsorbent window region at a lower annealing temperature of 600 ℃ and annealing time of 10 min.Under this annealing condition,the wavelength of the gain luminescence region basically does not shift to short wavelength,and the surface morphology of the whole epitaxial wafer remains fine after annealing.The application of this process condition can reduce the difficulty of production and save cost,which provides an effective method for upcoming fabrication.
文摘Renewable energy resources especially wind and solar energy are emerging as the modern power sources to electrify remote areas. The main reason behind their emergence is due to their environment-friendly behavior,unlimited availability and short period for replenishment over nonrenewable energy resources. Renewable energy resources are much better than nonrenewable energy resources, but the intermittency in renewable energy resources degrades the system performance. In order to overcome the intermittency, multiple hybrid system techniques were proposed in literature that can achieve suitable results but have disadvantages of complicated control structures and high implementation cost. Considering aforementioned shortcomings, a simple balancing approach is proposed to intermix solar and wind energy together so as to utilize the available energy from both sources at a given time.It is very common that solar farms are the dominating source of energy in daytime and summer, while wind farms are the dominating source of energy at night and in winter. The proposed approach delivers maximum possible power to the load by combining dominating and non-dominating resources all the time, hence mitigating the intermittency of individual resources. Compared with other approaches, the proposed approach offers key benefits with redundancy, simple design and low cost, which can be analyzed from simulation results.
基金This work was supported by the National Natural Science Foundation of China(NNSFC)(Grant No.62174154).
文摘Output power and reliability are the most important characteristic parameters of semiconductor lasers.However,catas-trophic optical damage(COD),which usually occurs on the cavity surface,will seriously damage the further improvement of the output power and affect the reliability.To improve the anti-optical disaster ability of the cavity surface,a non-absorption window(NAW)is adopted for the 915 nm InGaAsP/GaAsP single-quantum well semiconductor laser using quantum well mix-ing(QWI)induced by impurity-free vacancy.Both the principle and the process of point defect diffusion are described in detail in this paper.We also studied the effects of annealing temperature,annealing time,and the thickness of SiO_(2) film on the quan-tum well mixing in a semiconductor laser with a primary epitaxial structure,which is distinct from the previous structures.We found that when compared with the complete epitaxial structure,the blue shift of the semiconductor laser with the primary epi-taxial structure is larger under the same conditions.To obtain the appropriate blue shift window,the primary epitaxial struc-ture can use a lower annealing temperature and shorter annealing time.In addition,the process is less expensive.We also pro-vide references for upcoming device fabrication.
基金Funded bythe National Natural Science Foundation of China(No.60276013)
文摘A method of QWI （ quantum well intermixing） realizing through plasma-enhanced chemical vapordepositiom （PECVD） SiO2 film following ion implantation was investigated. PECVD 200 mn SiO2 film after 160 keV phosphorus（P） ion implantation was performed to induce InP-based multiple-quantum-well （MQW） laser structural intermixing, annealing process was carried out at 780 ℃ for 30 seconds under N2 flue, the blue shift ofphotoluminescenee （PL） peak related to implanted dose ： 1 × 10^11, 1 × 10^12, 1×10^13 ,3 × 10^13 , 7× 10^13 ion/ cm^2 is 22 nm, 65 nm, 104 nm, 109 nm, 101 nm, respectively. Under the same conditions, by comparing the blue shift of PL peak with P ion implantation only, slight differentiation between the two methods was observed, and results reveal that the defects in the implanting layers generated by ion implantation are much more than those in SiO2 film. So, the blue shift results mainly from ion implantation. However, SiO2 film also may promote the quantum well intermixing.
文摘A quantum well intermixing（QW1） investigation on double quantum well（DQW） structure with two different emitting wavelength caused by phosphorus ion implantation and following rapid thermal annealing （RTA） was carried out by means of photoluminescence（PL）. The ion implantation was performed at the energy of 120 keV with the dose ranging from 1 × 10^11cm^-2 to 1× 10^14cm^-2. The RTA was performed at the temperature of 700 ℃ for 30 s under pure nitrogen protection. The PL measurement implied that the band gap blue-shift from the upper well increases with the ion dose faster than that from lower well and the PL peaks from both QWs remained well separated under the lower dose implantation（-1 × 10^11cm^-2） indicating that the implant vacancy distribution affects the QWl. When the ion dose is over - 1 × 10^12cm^-2, the band gap blue-shift from both wells increases with the ion dose and finally the two peaks merge together as one peak indicating the ion implantation caused a total intermixing of both quantum wells.
基金Supported by the Ministry of Education,Science,and Technological Development of Serbia and the Flemish fund for Scientific Research(FWO Vlaanderen)
文摘We use the Galerkin approach and the finite-element method to numerically solve the effective-mass Schr¨odinger equation.The accuracy of the solution is explored as it varies with the range of the numerical domain.The model potentials are those of interdiffused semiconductor quantum wells and axially symmetric quantum wires.Also,the model of a linear harmonic oscillator is considered for comparison reasons.It is demonstrated that the absolute error of the electron ground state energy level exhibits a minimum at a certain domain range,which is thus considered to be optimal.This range is found to depend on the number of mesh nodes N approximately as α_0 log_e^(α1)(α_2N),where the values of the constants α_0,α_1,and α_2are determined by fitting the numerical data.And the optimal range is found to be a weak function of the diffusion length.Moreover,it was demonstrated that a domain range adaptation to the optimal value leads to substantial improvement of accuracy of the solution of the Schr¨odinger equation.
基金the National Natural Science Foundation of China(Grant Nos.61505003 and 61674140)the Beijing Education Commission Project(Grant No.SQKM201610005008)Beijing Postdoctoral Research Foundation(Grant No.2020-Z2-043)。
文摘The room-temperature(RT)bonding mechanisms of Ga As/Si O_(2)/Si and Ga As/Si heterointerfaces fabricated by surface-activated bonding(SAB)are investigated using a focused ion beam(FIB)system,cross-sectional scanning transmission electron microscopy(TEM),energy dispersive x-ray spectroscopy(EDX)and scanning acoustic microscopy(SAM).According to the element distribution detected by TEM and EDX,it is found that an intermixing process occurs among different atoms at the heterointerface during the RT bonding process following the surface-activation treatment.The diffusion of atoms at the interface is enhanced by the point defects introduced by the process of surface activation.We can confirm that through the point defects,a strong heterointerface can be created at RT.The measured bonding energies of Ga As/Si O_(2)/Si and Ga As/Si wafers are 0.7 J/m^(2)and 0.6 J/m^(2).The surface-activation process can not only remove surface oxides and generate dangling bonds,but also enhance the atomic diffusivity at the interface.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60736036,60706009,60777021 and 60702006)the National Basic Research Program of China (Grant Nos. 2006CB604901 and 2006CB604902)the National High Technology Research and Development Program of China (Grant Nos. 2007AA03Z419,2007AA03Z417 and 2009AA03Z442)
文摘Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been mono-lithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well intermixing method. Superior characteristics such as extinction ratio and temperature insensitivity have been demonstrated at wide temperature ranges.
