We report an experimental study of electron transport properties of MnSe/(Bi,Sb)_(2)Te_(3) heterostructures,in which MnSe is an antiferromagnetic insulator,and(Bi,Sb)_(2)Te_(3) is a three-dimensional topological insul...We report an experimental study of electron transport properties of MnSe/(Bi,Sb)_(2)Te_(3) heterostructures,in which MnSe is an antiferromagnetic insulator,and(Bi,Sb)_(2)Te_(3) is a three-dimensional topological insulator(TI).Strong magnetic proximity effect is manifested in the measurements of the Hall effect and longitudinal resistances.Our analysis shows that the gate voltage can substantially modify the anomalous Hall conductance,which exceeds 0.1 e^(2)/h at temperature T=1.6 K and magnetic field _(μ0)H=5 T,even though only the top TI surface is in proximity to MnSe.This work suggests that heterostructures based on antiferromagnetic insulators provide a promising platform for investigating a wide range of topological spintronic phenomena.展开更多
We should add the following acknowledge:Jing Teng thanks the support from the Youth Innovation Promotion Association Project,Chinese Academy of Sciences.
Higher-order band topology not only enriches our understanding of topological phases but also unveils pioneering lower-dimensional boundary states,which harbors substantial potential for next-generation device applica...Higher-order band topology not only enriches our understanding of topological phases but also unveils pioneering lower-dimensional boundary states,which harbors substantial potential for next-generation device applications.The distinct electronic configurations and tunable attributes of two-dimensional materials position them as a quintessential platform for the realization of second-order topological insulators(SOTIs).This article provides an overview of the research progress in SOTIs within the field of two-dimensional electronic materials,focusing on the characterization of higher-order topological properties and the numerous candidate materials proposed in theoretical studies.These endeavors not only enhance our understanding of higher-order topological states but also highlight potential material systems that could be experimentally realized.展开更多
The topological phases and edge states of a topological Euler insulator on a triangular lattice is studied.Differently from two-band Chern insulators,a topological Euler insulator is a kind of three-band model,describ...The topological phases and edge states of a topological Euler insulator on a triangular lattice is studied.Differently from two-band Chern insulators,a topological Euler insulator is a kind of three-band model,described by the Euler number not the Chern number.The spin textures of a topological Euler insulator in the momentum space is like a Néel-type skyrmion.It is found that the topological edge states exist in the band gap of the topological Euler insulator,and the topological Euler insulator can be transformed into a topological metal without the topological phase transition.展开更多
Ferroelectric topological insulators realized in heterostructures of two topologically trivial two-dimensional materials have recently attracted significant interest. Using first-principles calculations combined with ...Ferroelectric topological insulators realized in heterostructures of two topologically trivial two-dimensional materials have recently attracted significant interest. Using first-principles calculations combined with topological quantum chemistry, we investigate bilayer α-In_(2) Se_(3)(2 L-In_(2) Se_(3)) in van der Waals heterostructures with XSe(X = Ga, In, Tl) substrates within space group P 3m1(No. 156). We show that the emergence of ferroelectricity-driven topological phase transitions in these systems is dictated by fundamental symmetry principles rather than material-specific effects. The band bending at the XSe/2 L-In_(2) Se_(3) interface enables topological band inversions, with higher-electron-affinity substrates such as GaSe and TlSe favoring the transition. Remarkably, GaSe/2 L-In_(2) Se_(3) exhibits a reversible transition between topological and trivial insulating phases upon polarization switching, while TlSe/2 L-In_(2) Se_(3) undergoes sequential transitions from a topological insulator to a trivial insulator and eventually to a metallic state. This multistate manipulation highlights a viable route for designing tunable, low-power, multi-functional electronic devices.展开更多
Topological insulators represent a new phase of matter,characterized by conductive surfaces,while their bulk remains insulating.When the dimension of the system exceeds that of the topological state by at least two,th...Topological insulators represent a new phase of matter,characterized by conductive surfaces,while their bulk remains insulating.When the dimension of the system exceeds that of the topological state by at least two,the insulators are classified as higher-order topological insulators(HOTI).The appearance of higher-order topological states,such as corner states,can be explained by the filling anomaly,which leads to the fractional spectral charges in the unit cell.Previously reported fractional charges have been quite limited in number and size.In this work,based on the two-dimensional(2D)Su-Schrieffer-Heeger model lattice,we demonstrated a new class of HOTIs with adjustable fractional charges that can take any value ranging from 0 to 1,achieved by utilizing the Lorentz transformation.Furthermore,this transformation generates novel bound-state-in-continuum-like corner states,even when the lattice is in a topological trivial phase,offering a new approach to light beam localization.This work paves the way for fabricating HOTIs with diverse corner states that offer promising applicative potential.展开更多
We investigate the localization and topological properties of the Haldane model under the influence of random flux and Anderson disorder. Our localization analysis reveals that random flux induces a transition from in...We investigate the localization and topological properties of the Haldane model under the influence of random flux and Anderson disorder. Our localization analysis reveals that random flux induces a transition from insulating to metallic states, while Anderson localization only arises under the modulation of Anderson disorder. By employing real-space topological invariant methods, we demonstrates that the system undergoes topological phase transitions under different disorder manipulations, whereas random flux modulation uniquely induces topological Anderson insulator phases, with the potential to generate states with opposite Chern numbers. These findings highlight the distinct roles of disorder in shaping the interplay between topology and localization, providing insights into stabilizing topological states and designing robust topological quantum materials.展开更多
The exploration of topological phases remains a cutting-edge research frontier,driven by their promising potential for next-generation electronic and quantum technologies.In this work,we employ first-principles calcul...The exploration of topological phases remains a cutting-edge research frontier,driven by their promising potential for next-generation electronic and quantum technologies.In this work,we employ first-principles calculations and tightbinding modeling to systematically investigate the topological properties of freestanding two-dimensional(2D)honeycomb Bi,HgTe,and Al_(2)O_(3)(0001)-supported HgTe.Remarkably,all three systems exhibit coexistence of intrinsic first-and higher-order topological insulator states,induced by spin-orbit coupling(SOC).These states manifest as topologically protected gapless edge states in one-dimensional(1D)nanoribbons and symmetry-related corner states in zero-dimensional(0D)nanoflakes.Furthermore,fractional electron charges may accumulate at the corners of armchair-edged nanoflakes.Among these materials,HgTe/Al_(2)O_(3)(0001)is particularly promising due to its experimentally feasible atomic configuration and low-energy corner states.Our findings highlight the importance of exploring higher-order topological phases in quantum spin Hall insulators and pave the way for new possibilities in device applications.展开更多
In this investigation,we delve into the interplay between strong interactions and intricate topological configurations,leading to emergent quantum states such as magnetic topological insulators.The crux of our researc...In this investigation,we delve into the interplay between strong interactions and intricate topological configurations,leading to emergent quantum states such as magnetic topological insulators.The crux of our research centers on elucidating how lattice symmetry modulates antiferromagnetic quantum Hall phenomena.Utilizing the spinful Harper-Hofstadter model enriched with a next-nearest-neighbor(NNN)hopping term,we discern a half-filling bandgap,paving the way for the manifestation of a quantum Hall insulator characterized by a Chern number,C=2.Upon integrating a checkerboardpatterned staggered potential(△)and the Hubbard interaction(U),the system exhibits complex dynamical behaviors.Marginal NNN hopping culminates in a Ne′el antiferromagnetic Mott insulator.In contrast,intensified hopping results in stripe antiferromagnetic configurations.Moreover,in the regime of limited NNN hopping,a C=1 Ne′el antiferromagnetic quantum Hall insulator emerges.A salient observation pertains to the manifestation of a C=1 antiferromagnetic quantum Hall insulator when spin-flip mechanisms are not offset by space group symmetries.These findings chart a pathway for further explorations into antiferromagnetic Quantum Hall States.展开更多
In recent years,the study of higher-order topological states and their material realizations has become a research frontier in topological condensed matter physics.We demonstrate that twisted bilayer graphene with sma...In recent years,the study of higher-order topological states and their material realizations has become a research frontier in topological condensed matter physics.We demonstrate that twisted bilayer graphene with small twist angles behaves as a second-order topological insulator possessing topological corner charges.Using a tight-binding model,we compute the topological band indices and corner states of finite-sized twisted bilayer graphene flakes.It is found that for any small twist angle,whether commensurate or incommensurate,the gaps both below and above the flat bands are associated with nontrivial topological indices.Our results not only extend the concept of second-order band topology to arbitrary small twist angles but also confirm the existence of corner states at acute-angle corners.展开更多
We report a systematic study on the transport properties of(Bi_(0.2)Sb_(0.8))_(2)Te_(3)and(Bi_(0.4)Sb_(0.6))_(2)Te_(3)nanoplates with a thickness of about 6 nm grown by chemical vapor deposition(CVD)on Si/SiO_(2)subst...We report a systematic study on the transport properties of(Bi_(0.2)Sb_(0.8))_(2)Te_(3)and(Bi_(0.4)Sb_(0.6))_(2)Te_(3)nanoplates with a thickness of about 6 nm grown by chemical vapor deposition(CVD)on Si/SiO_(2)substrate.We achieve a significant ambipolar field effect in the two samples with different compositions by applying back-gate voltage,successfully tuning the Fermi level across the Dirac point of surface states.It is found that the Hall resistance exhibits strong non-linear behavior and magnetic field induced sign change of the slope when the Fermi level is near the Dirac point,indicating the coexistence of n-type and p-type carriers.Moreover,this coincides with the striking crossover from weak antilocalization(WAL)to linear magnetoresistance(LMR).These gate and temperature dependent magneto-transport studies provide a deeper insight into the nature of LMR and WAL in topological materials.展开更多
The thickness dependence of linearly polarized light-induced momentum anisotropy and the inverse spin Hall effect(PISHE)in topological insulator(TI)Bi_(2)Te_(3)films has been investigated.A significant enhancement of ...The thickness dependence of linearly polarized light-induced momentum anisotropy and the inverse spin Hall effect(PISHE)in topological insulator(TI)Bi_(2)Te_(3)films has been investigated.A significant enhancement of the PISHE signal is observed in the 12-quintuple-layer(QL)Bi_(2)Te_(3)film compared with that of the 3-and 5-QL samples,whereas a minimal value of photoinduced momentum anisotropy is found in the 12-QL sample.The photoinduced momentum anisotropy and the PISHE in Bi_(2)Te_(3)films are more than three and two orders of magnitude larger than those in Bi2Se3 films grown on SrTiO_(3)substrates,respectively.The 3-QL sample exhibits a sinusoidal dependence of the PISHE current on the light spot position,while the 5-QL and 12-QL samples show aW-shaped dependence,which arises from the different angles between the coordinate axis x and the in-plane crystallographic axis of the Bi_(2)Te_(3)films.Our findings demonstrate the critical role of film thickness in modulating both the photoinduced momentum anisotropy and the PISHE current,thereby suggesting a thickness-engineering strategy for designing novel optoelectronic devices based on TIs.展开更多
The exertion of a long-period potential on two-dimensional(2D)systems leads to band-structure downfolding and the formation of mini flat bands,thereby providing a route for band engineering and enabling the realizatio...The exertion of a long-period potential on two-dimensional(2D)systems leads to band-structure downfolding and the formation of mini flat bands,thereby providing a route for band engineering and enabling the realization of new physical phenomena through the tuning of electron–electron interactions.In this work,the effect of the moiré superlattice formed between the substrate and the bottom quintuple layer(QL)of 3-and 4-QL three-dimensional(3D)topological insulator Sb_(2)Te_(3) thin films on the top surface states is investigated.The scanning tunneling spectra reveal that the bulk-like bands exhibit potential variations consistent with the moirépattern.In contrast,the surface states display only minimal potential variations,resulting in the absence of mini-band formation in the top surface states.These surface states remain nearly unaffected,as confirmed by Landau-level spectroscopy and simulations.The results suggest distinct roles of the bottom-surface moirépotential on the bulk states and the top surface states in the weak coupling regime between the two surfaces.展开更多
In conventional higher-order topological insulators(HOTIs),the emergence of topological states can be explained by using the nonzero bulk polarization index.However,corner states emerge in HOTIs with incomplete bounda...In conventional higher-order topological insulators(HOTIs),the emergence of topological states can be explained by using the nonzero bulk polarization index.However,corner states emerge in HOTIs with incomplete boundary unit cells(i.e.,boundary defects)even though the bulk polarization is zero,which challenges the conventional understanding of HOTIs.Here,based on a Kekul´e-distorted honeycomb lattice with incomplete unit cells,we reveal that incomplete unit cells exhibit fractional charges through the analysis of Wannier centers by developing a compensation method and creating the concept of Wannier center domain(WCD)which is the smallest region that one Wannier center occupies.This method compensates for the missing parts of these boundary incomplete unit cells with additional WCDs to make them complete.The compensated WCDs automatically carry the corresponding charge,and this charge together with that of the incomplete unit cell constitutes the total charge of the complete unit cell after compensation.We conclude that the emergence of corner states is attributed to the filling anomaly,which is a fundamental mechanism.Our results refresh the understanding of HOTIs,especially those with structural discontinuities,and provide a novel design for topological states which have application value in producing optical functional devices.展开更多
基于计算机视觉的航拍绝缘子缺陷检测方法被广泛应用于电力巡检。针对绝缘子缺陷易受背景复杂、目标尺度较小等因素的影响而导致漏检、误检的问题,提出了一种旨在提高绝缘子缺陷检测精度的绝缘子缺陷检测模型YOLO-insulator。首先,引入...基于计算机视觉的航拍绝缘子缺陷检测方法被广泛应用于电力巡检。针对绝缘子缺陷易受背景复杂、目标尺度较小等因素的影响而导致漏检、误检的问题,提出了一种旨在提高绝缘子缺陷检测精度的绝缘子缺陷检测模型YOLO-insulator。首先,引入基于通道混洗的重参数化卷积(reparameterized convolution based on channel shuffle-one-shot aggregation, RCS-OSA)替换传统的二维卷积C2f,以增强网络的特征提取能力;其次,在颈部网络使用RCS-OSA模块替换部分的C2f卷积,同时引入挤压激励网络(squeeze and excitation network,SENet),以增强模型对通道间关系的捕捉和整体特征的表达能力;最后,针对多种缺陷区域小导致难以检测的问题,提出小目标检测层方法,该层包含更多的缺陷细节信息,有利于缺陷的检测。在自制绝缘子数据集上进行实验验证的结果表明,相对于基线YOLOv8n,YOLO-insulator模型在查准率、召回率、平均精度均值上都实现了提升,有效提高了模型的综合性能。展开更多
The hybridization gap in strained-layer InAs/In_(x)Ga_(1−x) Sb quantum spin Hall insulators(QSHIs)is significantly enhanced compared to binary InAs/GaSb QSHI structures,where the typical indium composition,x,ranges be...The hybridization gap in strained-layer InAs/In_(x)Ga_(1−x) Sb quantum spin Hall insulators(QSHIs)is significantly enhanced compared to binary InAs/GaSb QSHI structures,where the typical indium composition,x,ranges between 0.2 and 0.4.This enhancement prompts a critical question:to what extent can quantum wells(QWs)be strained while still preserving the fundamental QSHI phase?In this study,we demonstrate the controlled molecular beam epitaxial growth of highly strained-layer QWs with an indium composition of x=0.5.These structures possess a substantial compressive strain within the In_(0.5)Ga_(0.5)Sb QW.Detailed crystal structure analyses confirm the exceptional quality of the resulting epitaxial films,indicating coherent lattice structures and the absence of visible dislocations.Transport measurements further reveal that the QSHI phase in InAs/In_(0.5)Ga_(0.5)Sb QWs is robust and protected by time-reversal symmetry.Notably,the edge states in these systems exhibit giant magnetoresistance when subjected to a modest perpendicular magnetic field.This behavior is in agreement with the𝑍2 topological property predicted by the Bernevig–Hughes–Zhang model,confirming the preservation of topologically protected edge transport in the presence of enhanced bulk strain.展开更多
When two layers of graphene are stacked with a twist angle of approximately 1.1°,strong interlayer coupling gives rise to a pair of flat bands in twisted bilayer graphene(TBG),resulting in pronounced electron–el...When two layers of graphene are stacked with a twist angle of approximately 1.1°,strong interlayer coupling gives rise to a pair of flat bands in twisted bilayer graphene(TBG),resulting in pronounced electron–electron interactions.At half filling of the flat bands,TBG exhibits correlated insulating states.Here,we investigate the electrical transport properties of heterostructures composed of TBG and the antiferromagnetic insulator chromium oxychloride(CrOCl),and propose a strategy to modulate the correlated insulating states in TBG.During the transition from a conventional phase to a strong interfacial coupling phase,kink-like features are observed in the charge neutrality point(CNP),correlated insulating state,and band insulating state.Under a perpendicular magnetic field,the system exhibits broadened quantum Hall plateaus in the strong interfacial coupling regime.Electrons localized in the CrOCl layer screen the bottom gate,rendering the carrier density in TBG less sensitive to variations in the bottom gate voltage.These phenomena are well captured by a charge-transfer model between TBG and CrOCl.Our results provide insights into the control of electronic correlations and topological states in graphene moirésystems via interfacial charge coupling.展开更多
In recent years,the rapid development of mega-constellations has significantly exacerbated the deterioration of the space debris environment,posing substantial and escalating threats to the safety of spacecraft.This s...In recent years,the rapid development of mega-constellations has significantly exacerbated the deterioration of the space debris environment,posing substantial and escalating threats to the safety of spacecraft.This study aims to explore the complex evolution of the space debris environment and assess the collision risks associated with spacecraft.First,a space debris environment topological network model is proposed,which incorporates interdisciplinary methods from topological networks,fluid mechanics,and spacecraft dynamics.This model enables a structured representation of the relationships among space objects and provides rapid predictions of the space debris environment.Then,a collision probability algorithm based on the topological network model is introduced.This algorithm inherits the efficiency advantages of the topological network model and has been validated for reliability through comparison with the classical ESA’s DRAMA software.Finally,based on the above models,the collision risks of constellation satellites in Low Earth Orbit(LEO)are analyzed,including both operational and deorbit processes.The study reveals that constellation satellites face a much higher risk of internal collisions with satellites from the same constellation during operations than that with other space objects.Additionally,during the satellite deorbit process,the collision risk peaks when satellites traverse the operational region of Starlink satellites.展开更多
Topological phases are governed by lattice symmetries,yet how different symmetry-breaking paths(SBPs)affect topological transitions remains insufficiently understood.Most existing studies rely on a single SBP,and addr...Topological phases are governed by lattice symmetries,yet how different symmetry-breaking paths(SBPs)affect topological transitions remains insufficiently understood.Most existing studies rely on a single SBP,and address only one bandgap,limiting independent control of multiple gaps.Here,we investigate multiple isolated Dirac points in a trefoil-knot-modified honeycomb lattice,and show that a single SBP generally inverts all relevant Dirac points simultaneously,whereas the tailored combinations of SBPs enable selective and programmable band inversion at targeted gaps.The excitation-dependent responses reveal strong modal selectivity.This capability is exploited to realize independently controllable multi-channel signal splitting,which is unattainable with a single SBP.The results enable SBPs as an effective design degree of freedom for programmable and reconfigurable topological elastic devices.展开更多
This study explores the core characteristics,dynamic progression of the depression-anxiety-stress network among Chinese higher vocational college freshmen and its association with life satisfaction,and identifies key ...This study explores the core characteristics,dynamic progression of the depression-anxiety-stress network among Chinese higher vocational college freshmen and its association with life satisfaction,and identifies key nodes and critical intervention points.Participants were 295 higher vocational college freshmen(male=137;M=18.52,SD=0.69)completing two follow-up surveys(5-month interval).Measures included depression-anxiety-stress symptoms and life satisfaction,analyzed via cross-sectional and binary cross-lagged panel network analysis.The results showed that“Easily agitated”was the central node(strength=1.519,EI=1.967);“Irritable”and“Mouth Dryness”were top predictors(Out-EI=1.101,1.100),with depressive symptoms as the convergence hub.“Easily agitated”had the strongest direct negative impact on life satisfaction(cross-cluster out-predictability=−0.653).This study elucidates depression-anxietystress network mechanisms in higher vocational freshmen,providing a theoretical framework and targeted intervention guidance(e.g.,focusing on somatic and emotional nodes).展开更多
基金Supported by the National Key Research and Development Program of China (Grant No.2016YFA0300600)the National Natural Science Foundation of China (Grant No.11961141011)the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB28000000)。
文摘We report an experimental study of electron transport properties of MnSe/(Bi,Sb)_(2)Te_(3) heterostructures,in which MnSe is an antiferromagnetic insulator,and(Bi,Sb)_(2)Te_(3) is a three-dimensional topological insulator(TI).Strong magnetic proximity effect is manifested in the measurements of the Hall effect and longitudinal resistances.Our analysis shows that the gate voltage can substantially modify the anomalous Hall conductance,which exceeds 0.1 e^(2)/h at temperature T=1.6 K and magnetic field _(μ0)H=5 T,even though only the top TI surface is in proximity to MnSe.This work suggests that heterostructures based on antiferromagnetic insulators provide a promising platform for investigating a wide range of topological spintronic phenomena.
文摘We should add the following acknowledge:Jing Teng thanks the support from the Youth Innovation Promotion Association Project,Chinese Academy of Sciences.
基金supported by the National Natu-ral Science Foundation of China(Grants No.12174220 and No.12074217)the Shandong Provincial Science Foundation for Excellent Young Scholars(Grant No.ZR2023YQ001)+1 种基金the Taishan Young Scholar Program of Shandong Provincethe Qilu Young Scholar Pro-gram of Shandong University.
文摘Higher-order band topology not only enriches our understanding of topological phases but also unveils pioneering lower-dimensional boundary states,which harbors substantial potential for next-generation device applications.The distinct electronic configurations and tunable attributes of two-dimensional materials position them as a quintessential platform for the realization of second-order topological insulators(SOTIs).This article provides an overview of the research progress in SOTIs within the field of two-dimensional electronic materials,focusing on the characterization of higher-order topological properties and the numerous candidate materials proposed in theoretical studies.These endeavors not only enhance our understanding of higher-order topological states but also highlight potential material systems that could be experimentally realized.
基金supported by the National Natural Science Foundation of China(Grants Nos.12174288 and 12274326)the National Key R&D Program of China(Grant No.2021YFA1400602)。
文摘The topological phases and edge states of a topological Euler insulator on a triangular lattice is studied.Differently from two-band Chern insulators,a topological Euler insulator is a kind of three-band model,described by the Euler number not the Chern number.The spin textures of a topological Euler insulator in the momentum space is like a Néel-type skyrmion.It is found that the topological edge states exist in the band gap of the topological Euler insulator,and the topological Euler insulator can be transformed into a topological metal without the topological phase transition.
基金supported by the National Natural Science Foundation of China (Grant Nos.11874141,12174059,and 11604134)。
文摘Ferroelectric topological insulators realized in heterostructures of two topologically trivial two-dimensional materials have recently attracted significant interest. Using first-principles calculations combined with topological quantum chemistry, we investigate bilayer α-In_(2) Se_(3)(2 L-In_(2) Se_(3)) in van der Waals heterostructures with XSe(X = Ga, In, Tl) substrates within space group P 3m1(No. 156). We show that the emergence of ferroelectricity-driven topological phase transitions in these systems is dictated by fundamental symmetry principles rather than material-specific effects. The band bending at the XSe/2 L-In_(2) Se_(3) interface enables topological band inversions, with higher-electron-affinity substrates such as GaSe and TlSe favoring the transition. Remarkably, GaSe/2 L-In_(2) Se_(3) exhibits a reversible transition between topological and trivial insulating phases upon polarization switching, while TlSe/2 L-In_(2) Se_(3) undergoes sequential transitions from a topological insulator to a trivial insulator and eventually to a metallic state. This multistate manipulation highlights a viable route for designing tunable, low-power, multi-functional electronic devices.
基金supported by the Natural Science Basic Research Program of Shaanxi Province(No.2024JC-JCQN-06)the National Natural Science Foundation of China(Nos.12474337,12304370)Fundamental Research Funds for the Central Universities(No.xzy012024135).
文摘Topological insulators represent a new phase of matter,characterized by conductive surfaces,while their bulk remains insulating.When the dimension of the system exceeds that of the topological state by at least two,the insulators are classified as higher-order topological insulators(HOTI).The appearance of higher-order topological states,such as corner states,can be explained by the filling anomaly,which leads to the fractional spectral charges in the unit cell.Previously reported fractional charges have been quite limited in number and size.In this work,based on the two-dimensional(2D)Su-Schrieffer-Heeger model lattice,we demonstrated a new class of HOTIs with adjustable fractional charges that can take any value ranging from 0 to 1,achieved by utilizing the Lorentz transformation.Furthermore,this transformation generates novel bound-state-in-continuum-like corner states,even when the lattice is in a topological trivial phase,offering a new approach to light beam localization.This work paves the way for fabricating HOTIs with diverse corner states that offer promising applicative potential.
基金Project supported by the National Key Research and Development Program of China (Grant Nos. 2021YFA1400900, 2021YFA0718300, and 2021YFA1402100)the National Natural Science Foundation of China (Grant Nos. 12174461, 12234012, 12334012, and 52327808)。
文摘We investigate the localization and topological properties of the Haldane model under the influence of random flux and Anderson disorder. Our localization analysis reveals that random flux induces a transition from insulating to metallic states, while Anderson localization only arises under the modulation of Anderson disorder. By employing real-space topological invariant methods, we demonstrates that the system undergoes topological phase transitions under different disorder manipulations, whereas random flux modulation uniquely induces topological Anderson insulator phases, with the potential to generate states with opposite Chern numbers. These findings highlight the distinct roles of disorder in shaping the interplay between topology and localization, providing insights into stabilizing topological states and designing robust topological quantum materials.
基金supported by the Program for Science and Technology Innovation Team in Zhejiang Province,China(Grant No.2021R01004)the Six Talent Peaks Project of Jiangsu Province,China(Grant No.2019-XCL-081)the Startup Funding of Ningbo University and Yongjiang Recruitment Project(Grant No.432200942).
文摘The exploration of topological phases remains a cutting-edge research frontier,driven by their promising potential for next-generation electronic and quantum technologies.In this work,we employ first-principles calculations and tightbinding modeling to systematically investigate the topological properties of freestanding two-dimensional(2D)honeycomb Bi,HgTe,and Al_(2)O_(3)(0001)-supported HgTe.Remarkably,all three systems exhibit coexistence of intrinsic first-and higher-order topological insulator states,induced by spin-orbit coupling(SOC).These states manifest as topologically protected gapless edge states in one-dimensional(1D)nanoribbons and symmetry-related corner states in zero-dimensional(0D)nanoflakes.Furthermore,fractional electron charges may accumulate at the corners of armchair-edged nanoflakes.Among these materials,HgTe/Al_(2)O_(3)(0001)is particularly promising due to its experimentally feasible atomic configuration and low-energy corner states.Our findings highlight the importance of exploring higher-order topological phases in quantum spin Hall insulators and pave the way for new possibilities in device applications.
文摘In this investigation,we delve into the interplay between strong interactions and intricate topological configurations,leading to emergent quantum states such as magnetic topological insulators.The crux of our research centers on elucidating how lattice symmetry modulates antiferromagnetic quantum Hall phenomena.Utilizing the spinful Harper-Hofstadter model enriched with a next-nearest-neighbor(NNN)hopping term,we discern a half-filling bandgap,paving the way for the manifestation of a quantum Hall insulator characterized by a Chern number,C=2.Upon integrating a checkerboardpatterned staggered potential(△)and the Hubbard interaction(U),the system exhibits complex dynamical behaviors.Marginal NNN hopping culminates in a Ne′el antiferromagnetic Mott insulator.In contrast,intensified hopping results in stripe antiferromagnetic configurations.Moreover,in the regime of limited NNN hopping,a C=1 Ne′el antiferromagnetic quantum Hall insulator emerges.A salient observation pertains to the manifestation of a C=1 antiferromagnetic quantum Hall insulator when spin-flip mechanisms are not offset by space group symmetries.These findings chart a pathway for further explorations into antiferromagnetic Quantum Hall States.
基金supported by the National Natural Science Foundation of China(Grant Nos.12104232 and 12074156).
文摘In recent years,the study of higher-order topological states and their material realizations has become a research frontier in topological condensed matter physics.We demonstrate that twisted bilayer graphene with small twist angles behaves as a second-order topological insulator possessing topological corner charges.Using a tight-binding model,we compute the topological band indices and corner states of finite-sized twisted bilayer graphene flakes.It is found that for any small twist angle,whether commensurate or incommensurate,the gaps both below and above the flat bands are associated with nontrivial topological indices.Our results not only extend the concept of second-order band topology to arbitrary small twist angles but also confirm the existence of corner states at acute-angle corners.
基金financially supported by the National Natural Science Foundation of China(Nos.52201233,52371204,and 52031014).
文摘We report a systematic study on the transport properties of(Bi_(0.2)Sb_(0.8))_(2)Te_(3)and(Bi_(0.4)Sb_(0.6))_(2)Te_(3)nanoplates with a thickness of about 6 nm grown by chemical vapor deposition(CVD)on Si/SiO_(2)substrate.We achieve a significant ambipolar field effect in the two samples with different compositions by applying back-gate voltage,successfully tuning the Fermi level across the Dirac point of surface states.It is found that the Hall resistance exhibits strong non-linear behavior and magnetic field induced sign change of the slope when the Fermi level is near the Dirac point,indicating the coexistence of n-type and p-type carriers.Moreover,this coincides with the striking crossover from weak antilocalization(WAL)to linear magnetoresistance(LMR).These gate and temperature dependent magneto-transport studies provide a deeper insight into the nature of LMR and WAL in topological materials.
基金supported by the National Natural Science Foundation of China(Grant Nos.62074036,61674038,and 11574302)the Foreign Cooperation Project of Fujian Province,China(Grant No.2023I0005)+2 种基金the Open Research Fund Program of the State Key Laboratory of Low Dimensional Quantum Physics(Grant No.KF202108)the National Key Research and Development Program of China(Grant No.2016YFB0402303)the Foundation of the Fujian Provincial Department of Industry and Information Technology of China(Grant No.82318075).
文摘The thickness dependence of linearly polarized light-induced momentum anisotropy and the inverse spin Hall effect(PISHE)in topological insulator(TI)Bi_(2)Te_(3)films has been investigated.A significant enhancement of the PISHE signal is observed in the 12-quintuple-layer(QL)Bi_(2)Te_(3)film compared with that of the 3-and 5-QL samples,whereas a minimal value of photoinduced momentum anisotropy is found in the 12-QL sample.The photoinduced momentum anisotropy and the PISHE in Bi_(2)Te_(3)films are more than three and two orders of magnitude larger than those in Bi2Se3 films grown on SrTiO_(3)substrates,respectively.The 3-QL sample exhibits a sinusoidal dependence of the PISHE current on the light spot position,while the 5-QL and 12-QL samples show aW-shaped dependence,which arises from the different angles between the coordinate axis x and the in-plane crystallographic axis of the Bi_(2)Te_(3)films.Our findings demonstrate the critical role of film thickness in modulating both the photoinduced momentum anisotropy and the PISHE current,thereby suggesting a thickness-engineering strategy for designing novel optoelectronic devices based on TIs.
基金the supporting from the National Key R&D Program of China(Grant No.2022YFA1403102)the National Natural Science Foundation of China(Grant Nos.12474478,92065102,and 12574094)。
文摘The exertion of a long-period potential on two-dimensional(2D)systems leads to band-structure downfolding and the formation of mini flat bands,thereby providing a route for band engineering and enabling the realization of new physical phenomena through the tuning of electron–electron interactions.In this work,the effect of the moiré superlattice formed between the substrate and the bottom quintuple layer(QL)of 3-and 4-QL three-dimensional(3D)topological insulator Sb_(2)Te_(3) thin films on the top surface states is investigated.The scanning tunneling spectra reveal that the bulk-like bands exhibit potential variations consistent with the moirépattern.In contrast,the surface states display only minimal potential variations,resulting in the absence of mini-band formation in the top surface states.These surface states remain nearly unaffected,as confirmed by Landau-level spectroscopy and simulations.The results suggest distinct roles of the bottom-surface moirépotential on the bulk states and the top surface states in the weak coupling regime between the two surfaces.
基金supported by the Natural Science Basic Research Program of Shaanxi Province (Grant Nos.2024JC-JCQN-06 and2025JC-QYCX-006)the National Natural Science Foundation of China (Grant No.12474337)Chinese Academy of Sciences Project (Grant Nos.E4BA270100,E4Z127010F,E4Z6270100,and E53327020D)。
文摘In conventional higher-order topological insulators(HOTIs),the emergence of topological states can be explained by using the nonzero bulk polarization index.However,corner states emerge in HOTIs with incomplete boundary unit cells(i.e.,boundary defects)even though the bulk polarization is zero,which challenges the conventional understanding of HOTIs.Here,based on a Kekul´e-distorted honeycomb lattice with incomplete unit cells,we reveal that incomplete unit cells exhibit fractional charges through the analysis of Wannier centers by developing a compensation method and creating the concept of Wannier center domain(WCD)which is the smallest region that one Wannier center occupies.This method compensates for the missing parts of these boundary incomplete unit cells with additional WCDs to make them complete.The compensated WCDs automatically carry the corresponding charge,and this charge together with that of the incomplete unit cell constitutes the total charge of the complete unit cell after compensation.We conclude that the emergence of corner states is attributed to the filling anomaly,which is a fundamental mechanism.Our results refresh the understanding of HOTIs,especially those with structural discontinuities,and provide a novel design for topological states which have application value in producing optical functional devices.
文摘基于计算机视觉的航拍绝缘子缺陷检测方法被广泛应用于电力巡检。针对绝缘子缺陷易受背景复杂、目标尺度较小等因素的影响而导致漏检、误检的问题,提出了一种旨在提高绝缘子缺陷检测精度的绝缘子缺陷检测模型YOLO-insulator。首先,引入基于通道混洗的重参数化卷积(reparameterized convolution based on channel shuffle-one-shot aggregation, RCS-OSA)替换传统的二维卷积C2f,以增强网络的特征提取能力;其次,在颈部网络使用RCS-OSA模块替换部分的C2f卷积,同时引入挤压激励网络(squeeze and excitation network,SENet),以增强模型对通道间关系的捕捉和整体特征的表达能力;最后,针对多种缺陷区域小导致难以检测的问题,提出小目标检测层方法,该层包含更多的缺陷细节信息,有利于缺陷的检测。在自制绝缘子数据集上进行实验验证的结果表明,相对于基线YOLOv8n,YOLO-insulator模型在查准率、召回率、平均精度均值上都实现了提升,有效提高了模型的综合性能。
基金supported by the Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos.XDB28000000 and XDB0460000)the Quantum Science and Technology-National Science and Technology Major Project (Grant No.2021ZD0302600)the National Key Research and Development Program of China(Grant No.2024YFA1409002)。
文摘The hybridization gap in strained-layer InAs/In_(x)Ga_(1−x) Sb quantum spin Hall insulators(QSHIs)is significantly enhanced compared to binary InAs/GaSb QSHI structures,where the typical indium composition,x,ranges between 0.2 and 0.4.This enhancement prompts a critical question:to what extent can quantum wells(QWs)be strained while still preserving the fundamental QSHI phase?In this study,we demonstrate the controlled molecular beam epitaxial growth of highly strained-layer QWs with an indium composition of x=0.5.These structures possess a substantial compressive strain within the In_(0.5)Ga_(0.5)Sb QW.Detailed crystal structure analyses confirm the exceptional quality of the resulting epitaxial films,indicating coherent lattice structures and the absence of visible dislocations.Transport measurements further reveal that the QSHI phase in InAs/In_(0.5)Ga_(0.5)Sb QWs is robust and protected by time-reversal symmetry.Notably,the edge states in these systems exhibit giant magnetoresistance when subjected to a modest perpendicular magnetic field.This behavior is in agreement with the𝑍2 topological property predicted by the Bernevig–Hughes–Zhang model,confirming the preservation of topologically protected edge transport in the presence of enhanced bulk strain.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.52225207 and 52350001)the Shanghai Pilot Program for Basic Research–Fudan University 21TQ1400100(Grant No.21TQ006)the Shanghai Municipal Science and Technology Major Project(Grant No.2019SHZDZX01)。
文摘When two layers of graphene are stacked with a twist angle of approximately 1.1°,strong interlayer coupling gives rise to a pair of flat bands in twisted bilayer graphene(TBG),resulting in pronounced electron–electron interactions.At half filling of the flat bands,TBG exhibits correlated insulating states.Here,we investigate the electrical transport properties of heterostructures composed of TBG and the antiferromagnetic insulator chromium oxychloride(CrOCl),and propose a strategy to modulate the correlated insulating states in TBG.During the transition from a conventional phase to a strong interfacial coupling phase,kink-like features are observed in the charge neutrality point(CNP),correlated insulating state,and band insulating state.Under a perpendicular magnetic field,the system exhibits broadened quantum Hall plateaus in the strong interfacial coupling regime.Electrons localized in the CrOCl layer screen the bottom gate,rendering the carrier density in TBG less sensitive to variations in the bottom gate voltage.These phenomena are well captured by a charge-transfer model between TBG and CrOCl.Our results provide insights into the control of electronic correlations and topological states in graphene moirésystems via interfacial charge coupling.
基金supported by the National Level Project of China(No.KJSP2023020201)the Foundation of Science and Technology on Aerospace Flight Dynamics Laboratory of China(No.kjw6142210240202)+1 种基金the Beijing Institute of Technology Research Fund Program for Young Scholars of Chinathe Fundamental Research Funds for Central Universities of China。
文摘In recent years,the rapid development of mega-constellations has significantly exacerbated the deterioration of the space debris environment,posing substantial and escalating threats to the safety of spacecraft.This study aims to explore the complex evolution of the space debris environment and assess the collision risks associated with spacecraft.First,a space debris environment topological network model is proposed,which incorporates interdisciplinary methods from topological networks,fluid mechanics,and spacecraft dynamics.This model enables a structured representation of the relationships among space objects and provides rapid predictions of the space debris environment.Then,a collision probability algorithm based on the topological network model is introduced.This algorithm inherits the efficiency advantages of the topological network model and has been validated for reliability through comparison with the classical ESA’s DRAMA software.Finally,based on the above models,the collision risks of constellation satellites in Low Earth Orbit(LEO)are analyzed,including both operational and deorbit processes.The study reveals that constellation satellites face a much higher risk of internal collisions with satellites from the same constellation during operations than that with other space objects.Additionally,during the satellite deorbit process,the collision risk peaks when satellites traverse the operational region of Starlink satellites.
基金Project supported by the National Natural Science Foundation of China(Nos.12232015 and12572106)the National Key R&D Program of China(Nos.2024YFB3408700,2024YFB3408701,2024YFB3408703)the Natural Science Foundation of Shaanxi Province of China(No.2023-JC-YB-073)。
文摘Topological phases are governed by lattice symmetries,yet how different symmetry-breaking paths(SBPs)affect topological transitions remains insufficiently understood.Most existing studies rely on a single SBP,and address only one bandgap,limiting independent control of multiple gaps.Here,we investigate multiple isolated Dirac points in a trefoil-knot-modified honeycomb lattice,and show that a single SBP generally inverts all relevant Dirac points simultaneously,whereas the tailored combinations of SBPs enable selective and programmable band inversion at targeted gaps.The excitation-dependent responses reveal strong modal selectivity.This capability is exploited to realize independently controllable multi-channel signal splitting,which is unattainable with a single SBP.The results enable SBPs as an effective design degree of freedom for programmable and reconfigurable topological elastic devices.
基金supported by the Anhui Philosophical and Social Science Fund for University Research:The Application of Painting Psychological Analysis in College Students’Mental Health Education Courses(Grant#:2023AH052874),which has provided essential financial support for data collection.
文摘This study explores the core characteristics,dynamic progression of the depression-anxiety-stress network among Chinese higher vocational college freshmen and its association with life satisfaction,and identifies key nodes and critical intervention points.Participants were 295 higher vocational college freshmen(male=137;M=18.52,SD=0.69)completing two follow-up surveys(5-month interval).Measures included depression-anxiety-stress symptoms and life satisfaction,analyzed via cross-sectional and binary cross-lagged panel network analysis.The results showed that“Easily agitated”was the central node(strength=1.519,EI=1.967);“Irritable”and“Mouth Dryness”were top predictors(Out-EI=1.101,1.100),with depressive symptoms as the convergence hub.“Easily agitated”had the strongest direct negative impact on life satisfaction(cross-cluster out-predictability=−0.653).This study elucidates depression-anxietystress network mechanisms in higher vocational freshmen,providing a theoretical framework and targeted intervention guidance(e.g.,focusing on somatic and emotional nodes).
