We investigate the interplay between the pseudogap state and d-wave superconductivity in the two-dimensional doped Hubbard model by employing an eight-site cluster dynamical mean-field theory method.By tuning electron...We investigate the interplay between the pseudogap state and d-wave superconductivity in the two-dimensional doped Hubbard model by employing an eight-site cluster dynamical mean-field theory method.By tuning electron hopping parameters,the strong-coupling pseudogap in the two-dimensional Hubbard model can be either enhanced or suppressed in the doped Mott insulator regime.We find that in underdoped cases,the closing of pseudogap leads to a significant enhancement of superconductivity,indicating competition between the two in the underdoped regime.In contrast,at large dopings,suppressing the pseudogap is accompanied by a concurrent decrease in the superconducting transition temperature Tc,which can be attributed to a reduction in antiferromagnetic correlations behind both the pseudogap and superconductivity.We elucidate this evolving relationship between pseudogap and superconductivity across different doping regimes.展开更多
In moiré-patterned van der Waals structures of transition metal dichalcogenides,correlated insulators can form under integer and fractional fillings,whose transport properties are governed by various quasiparticl...In moiré-patterned van der Waals structures of transition metal dichalcogenides,correlated insulators can form under integer and fractional fillings,whose transport properties are governed by various quasiparticle excitations including holons,doublons and interlayer exciton insulators.Here we theoretically investigate the nearest-neighbor inter-site hoppings of holons and interlayer exciton insulators.Our analysis indicates that these hopping strengths are significantly enhanced compared to that of a single carrier.The underlying mechanism can be attributed to the strong Coulomb interaction between carriers at different sites.For the interlayer exciton insulator consisting of a holon and a carrier in different layers,we have also obtained its effective Bohr radius and energy splitting between the ground and the first-excited states.展开更多
Ferroelectric topological insulators realized in heterostructures of two topologically trivial two-dimensional materials have recently attracted significant interest. Using first-principles calculations combined with ...Ferroelectric topological insulators realized in heterostructures of two topologically trivial two-dimensional materials have recently attracted significant interest. Using first-principles calculations combined with topological quantum chemistry, we investigate bilayer α-In_(2) Se_(3)(2 L-In_(2) Se_(3)) in van der Waals heterostructures with XSe(X = Ga, In, Tl) substrates within space group P 3m1(No. 156). We show that the emergence of ferroelectricity-driven topological phase transitions in these systems is dictated by fundamental symmetry principles rather than material-specific effects. The band bending at the XSe/2 L-In_(2) Se_(3) interface enables topological band inversions, with higher-electron-affinity substrates such as GaSe and TlSe favoring the transition. Remarkably, GaSe/2 L-In_(2) Se_(3) exhibits a reversible transition between topological and trivial insulating phases upon polarization switching, while TlSe/2 L-In_(2) Se_(3) undergoes sequential transitions from a topological insulator to a trivial insulator and eventually to a metallic state. This multistate manipulation highlights a viable route for designing tunable, low-power, multi-functional electronic devices.展开更多
Higher-order band topology not only enriches our understanding of topological phases but also unveils pioneering lower-dimensional boundary states,which harbors substantial potential for next-generation device applica...Higher-order band topology not only enriches our understanding of topological phases but also unveils pioneering lower-dimensional boundary states,which harbors substantial potential for next-generation device applications.The distinct electronic configurations and tunable attributes of two-dimensional materials position them as a quintessential platform for the realization of second-order topological insulators(SOTIs).This article provides an overview of the research progress in SOTIs within the field of two-dimensional electronic materials,focusing on the characterization of higher-order topological properties and the numerous candidate materials proposed in theoretical studies.These endeavors not only enhance our understanding of higher-order topological states but also highlight potential material systems that could be experimentally realized.展开更多
Atmospheric particle adsorption on insulator surfaces,coupled with humid environments,significantly affects contamination flashover,necessitating a clear understanding of the electric field distribution on insulator s...Atmospheric particle adsorption on insulator surfaces,coupled with humid environments,significantly affects contamination flashover,necessitating a clear understanding of the electric field distribution on insulator surfaces with adsorbed particles.This is crucial for accurately assessing insulator safety and informing critical decision-making.Although previous research has demonstrated that particle arrangement significantly influences the electric field distribution around transmission lines,an in-depth analysis of its effects on insulator surfaces remains lacking.To address this gap,this study establishes a composite insulator model to examine how three types of spherical contamination layers affect the electric field distribution on insulator surfaces under varying environmental conditions.The results reveal that in dry environments,the electric field strength at the apex of single-particle contamination layers increases with the particle size and relative permittivity.For the double-particle contamination layers,the electric field intensity on the insulator surface decreases as the particle spacing increases,and larger particles are more likely to attract smaller charged particles.For triple-particle contamination layers arranged in a triangular pattern,the maximum surface field strength is nearly double that of the chain-arranged particles.Furthermore,within the chain-arranged triple-particle contamination layers,a large-small-large size arrangement has a more pronounced impact on the surface electric field than a small-large-small size arrangement.In humid environments,the surface electric field strength of insulators decreases with increasing contamination levels.These findings are of significant theoretical and practical importance for ensuring the safe operation of power systems.展开更多
Recent studies have successfully demonstrated high-Tc superconductivity in bilayer nickelate La3Ni2O7.However,research on modulating the structural and transport characteristics of La3Ni2O7 films by applying“chemical...Recent studies have successfully demonstrated high-Tc superconductivity in bilayer nickelate La3Ni2O7.However,research on modulating the structural and transport characteristics of La3Ni2O7 films by applying“chemical”compressive pressure through cation substitution is still limited.Here,we address this issue in the La_(3−x)Nd_(x)Ni_(2)O_(7)(x=0,1.0,1.5,2.0,and 2.5)thin film samples.It was found that using Nd3+with a smaller radius instead of La3+can reduce the c-axis lattice constant and shift the metal-insulator transition(MIT)temperature TMIT.To probe the origin of the MIT at cryogenic temperatures,experimental measurements of magnetoresistance were conducted,and theoretical analysis was carried out using the Kondo model,Hikami-Larkin-Nagaoka equation,and other methods.The results indicate that as Nd doping rises,the contributions of the Kondo effect and two-dimensional weak localization(WL)first decrease and then increase.The total contribution of WL and the Kondo effect in the mid-doped La_(1.5)Nd_(1.5)Ni_(2)O_(7)sample was the smallest,which to some extent explains the changes in TMIT.The Kondo effect dominates in other La_(3−x)Nd_(x)Ni_(2)O_(7)(x=0,1.0,2.0,and 2.5)samples.This work demonstrates that cation doping has a significant impact on bilayer nickelates,providing experimental evidence for understanding the physical mechanism of the MIT in bilayer nickelates.展开更多
The cubic pyrochlore Tl_(2)Ru_(2)O_(7) undergoes concurrently a metal–insulator transition (MIT) and a first-order structural transition at T_(MIT)≈120 K,below which the system was found to form one-dimensional spin...The cubic pyrochlore Tl_(2)Ru_(2)O_(7) undergoes concurrently a metal–insulator transition (MIT) and a first-order structural transition at T_(MIT)≈120 K,below which the system was found to form one-dimensional spin-one Haldane chains associated with an orbital ordering of Ru-4d electrons.With an aim to tune and access distinct ground states with strong entanglements of multiple degrees of freedom,i.e.,spin,orbital,charge,and lattice,we utilize a high-pressure approach to regulate the MIT of this system.Our detailed resistivityρ(T) measurements on the polycrystalline Tl_(2)Ru_(2)O_(7) samples under various hydrostatic pressures indeed reveal an unusual evolution of the electronic ground states.At first,the MIT is suppressed monotonically from 120 K at ambient to about 70 K at 1.5 GPa and then vanishes suddenly at about 1.8 GPa without achieving a metallic ground state.Meanwhile,the system evolves into a semiconducting ground state with magnitude ofρ(T) in the entire temperature range enhanced gradually by further increasing pressure.Prior to the abrupt disappearance of MIT,a new electronic order manifested as a kink-like anomaly inρ(T) emerges at T_(0)>T_(MIT) at 1.2 GPa and it continues to increase with pressure,producing a tricritical-point-like behavior in the T–P phase diagram of Tl_(2)Ru_(2)O_(7).The presence of two successive transitions at T_(0 )and T_(MIT )in the pressure range 1.2–1.5 GPa indicates an inhomogeneous electronic state nearby the tricritical point.At P≥3 GPa,another broad anomaly emerges inρ(T) at T_(1)>T_(0),and T_(1)continuously increases with pressure,dividing the semiconductingρ(T) into distinct thermally activated regions.These rich phenomena in the pressurized Tl_(2)Ru_(2)O_(7) should originate from the complex interplay of strongly entangled multiple quantum degrees of freedom in the system near the localized-to-itinerant crossover regime.展开更多
Topological insulators represent a new phase of matter,characterized by conductive surfaces,while their bulk remains insulating.When the dimension of the system exceeds that of the topological state by at least two,th...Topological insulators represent a new phase of matter,characterized by conductive surfaces,while their bulk remains insulating.When the dimension of the system exceeds that of the topological state by at least two,the insulators are classified as higher-order topological insulators(HOTI).The appearance of higher-order topological states,such as corner states,can be explained by the filling anomaly,which leads to the fractional spectral charges in the unit cell.Previously reported fractional charges have been quite limited in number and size.In this work,based on the two-dimensional(2D)Su-Schrieffer-Heeger model lattice,we demonstrated a new class of HOTIs with adjustable fractional charges that can take any value ranging from 0 to 1,achieved by utilizing the Lorentz transformation.Furthermore,this transformation generates novel bound-state-in-continuum-like corner states,even when the lattice is in a topological trivial phase,offering a new approach to light beam localization.This work paves the way for fabricating HOTIs with diverse corner states that offer promising applicative potential.展开更多
The excitonic insulator(EI)is a more than 60-year-old theoretical proposal that is still elusive.It is a purely quantum phenomenon involving the spontaneous generation of excitons in quantum mechanics and the spontane...The excitonic insulator(EI)is a more than 60-year-old theoretical proposal that is still elusive.It is a purely quantum phenomenon involving the spontaneous generation of excitons in quantum mechanics and the spontaneous condensation of excitons in quantum statistics.At this point,the excitons represent the ground state rather than the conventional excited state.Thus,the scarcity of candidate materials is a key factor contributing to the lack of recognized EI to date.In this review,we begin with the birth of EI,presenting the current state of the field and the main challenges it faces.We then focus on recent advances in the discovery and design of EIs based on the first-principles Bethe-Salpeter scheme,in particular the dark-exciton rule guided screening of materials.It not only opens up new avenues for realizing excitonic instability in direct-gap and wide-gap semiconductors,but also leads to the discovery of novel quantum states of matter such as half-EIs and spin-triplet EIs.Finally,we will look ahead to possible research pathways leading to the first recognized EI,both theoretically and computationally.展开更多
In this investigation,we delve into the interplay between strong interactions and intricate topological configurations,leading to emergent quantum states such as magnetic topological insulators.The crux of our researc...In this investigation,we delve into the interplay between strong interactions and intricate topological configurations,leading to emergent quantum states such as magnetic topological insulators.The crux of our research centers on elucidating how lattice symmetry modulates antiferromagnetic quantum Hall phenomena.Utilizing the spinful Harper-Hofstadter model enriched with a next-nearest-neighbor(NNN)hopping term,we discern a half-filling bandgap,paving the way for the manifestation of a quantum Hall insulator characterized by a Chern number,C=2.Upon integrating a checkerboardpatterned staggered potential(△)and the Hubbard interaction(U),the system exhibits complex dynamical behaviors.Marginal NNN hopping culminates in a Ne′el antiferromagnetic Mott insulator.In contrast,intensified hopping results in stripe antiferromagnetic configurations.Moreover,in the regime of limited NNN hopping,a C=1 Ne′el antiferromagnetic quantum Hall insulator emerges.A salient observation pertains to the manifestation of a C=1 antiferromagnetic quantum Hall insulator when spin-flip mechanisms are not offset by space group symmetries.These findings chart a pathway for further explorations into antiferromagnetic Quantum Hall States.展开更多
We investigate the localization and topological properties of the Haldane model under the influence of random flux and Anderson disorder. Our localization analysis reveals that random flux induces a transition from in...We investigate the localization and topological properties of the Haldane model under the influence of random flux and Anderson disorder. Our localization analysis reveals that random flux induces a transition from insulating to metallic states, while Anderson localization only arises under the modulation of Anderson disorder. By employing real-space topological invariant methods, we demonstrates that the system undergoes topological phase transitions under different disorder manipulations, whereas random flux modulation uniquely induces topological Anderson insulator phases, with the potential to generate states with opposite Chern numbers. These findings highlight the distinct roles of disorder in shaping the interplay between topology and localization, providing insights into stabilizing topological states and designing robust topological quantum materials.展开更多
We theoretically study the effect of a uniform orbital magnetic field on spin waves in a triangular lattice tetrahedral antiferromagnetic insulator without spin–orbit coupling. Through symmetry analysis and microscop...We theoretically study the effect of a uniform orbital magnetic field on spin waves in a triangular lattice tetrahedral antiferromagnetic insulator without spin–orbit coupling. Through symmetry analysis and microscopic calculation, we show that the optical spin wave mode at the Brillouin zone center can acquire a small orbital magnetic moment, although it exhibits no magnetic moment from the Zeeman coupling. Our results are potentially applicable to intercalated van der Waals materials and twisted double-bilayer graphene.展开更多
Electron-hole interactions play a crucial role in determining the optoelectronic properties of materials,and in lowdimensional systems this is especially true due to the decrease of screening.In this review,we focus o...Electron-hole interactions play a crucial role in determining the optoelectronic properties of materials,and in lowdimensional systems this is especially true due to the decrease of screening.In this review,we focus on one unique quantum phase induced by the electron-hole interaction in two-dimensional systems,known as“exciton insulators”(EIs).Although this phase of matter has been studied for more than half a century,suitable platforms for its stable realization remain scarce.We provide an overview of the strategies to realize EIs in accessible materials and structures,along with a discussion on some unique properties of EIs stemming from the band structures of these materials.Additionally,signatures in experiments to distinguish EIs are discussed.展开更多
The flashover of insulator strings occurring at normal working voltages undercontaminated/polluted conditions, obviously deserves serious consideration. Though much researchhas been gone into pollution-induced flashov...The flashover of insulator strings occurring at normal working voltages undercontaminated/polluted conditions, obviously deserves serious consideration. Though much researchhas been gone into pollution-induced flashover phenomena but grey areas still exist in ourknowledge. In the present experimental study the breakdown (flashover) voltages across gaps oninsulator top surfaces and gaps between sheds (on the underside of an insulator), also the flashoverstudies on a single unit and a 3-unit insulator strings were carried out. An attempt has been madeto correlate the values obtained for all the cases. From the present investigation it was found thatresistance measurement of individual units of a polluted 3-unit string before and after flashoverindicates that strongly differing resistances could be the cause of flashover of ceramic discinsulator strings.展开更多
The application of electric current pulse（ECP） to a solidification process refers to the immersion of electrodes into the liquid metal and the employment of thermal insulators on the upper surface of metal.In order ...The application of electric current pulse（ECP） to a solidification process refers to the immersion of electrodes into the liquid metal and the employment of thermal insulators on the upper surface of metal.In order to ascertain the effects of these two factors on the structure refinement by the ECP technique,three groups of experiments were performed with different types of electrodes or various thermal insulators.By the comparison between solidification structures under different conditions,it is followed that the electrode and the thermal insulator have an obvious influence on the grain refinement under an applied ECP,and further analysis demonstrates that the thermal conditions of the liquid surface play a vital role in the modification of solidification structure.Also,the results support the viewpoint that most of the equiaxed grains originate from the liquid surface subjected to an ECP.展开更多
Both the ceramic and the composite insulators have their own advantages and disadvantages when compared with each other. It is a reasonable idea to combine their merits together to design a novel insulator. The key me...Both the ceramic and the composite insulators have their own advantages and disadvantages when compared with each other. It is a reasonable idea to combine their merits together to design a novel insulator. The key measure of the novel insulator suggested in this paper is to add an annular metal sheet coated with high temperature vulcanisation (HTV) silicone rubber (SIR) at the base of the traditional ceramic insulator cap. The HTVSIR covering on the exterior of the metal sheet can lengthen the creepage distance. The metal sheet can uniform the electric stress, reduce its maximum value and modify its direction on one insulator unit and acts as equalizing ring on an insulator string. The factors stated above are the main reasons why the novel insulator has better insulating performance, including lower leakage current and flashover voltage, especially under polluted conditions. Simultaneously, the novel insulator can overcome the disadvantages of the ordinary remedies which have been widely used to improve the performance of ceramic insulators against pollution. The experimental results obtained in the laboratory were in good agreement with the theoretical analysis and demonstrated the novel insulator's effectiveness.展开更多
To overcome the floating-body effect and self-heating effect of SOI devices,the drain and source on insulator (DSOI) structure is fabricated and tested.The low dose developed recently and low energy local SIMOX techno...To overcome the floating-body effect and self-heating effect of SOI devices,the drain and source on insulator (DSOI) structure is fabricated and tested.The low dose developed recently and low energy local SIMOX technology combined with the conventional CMOS technology is used to fabricate this kind of devices.Using this method,DSOI,SOI,and bulk MOSFETs are successfully integrated on a single chip.Test results show that the drain induced barrier lowering effect is suppressed.The breakdown voltage drain-to-source is greatly increased for DSOI devices due to the elimination of the floating-body effect.And the self-heating effect is also reduced and thus the reliability increased.At the same time,the advantage of SOI devices in speed is maintained.The technology makes it possible to integrate low voltage,low power,low speed SOI devices or high voltage,high power,high speed DSOI devices on one chip and it offers option for developing system-on-chip technology.展开更多
An ultracompact 3 dB coupler is designed and fabricated in silicon on insulator,based on 1×2 line tapered multimode interference (MMI) coupler.Comparing with the conventional straight MMI coupler,the device is...An ultracompact 3 dB coupler is designed and fabricated in silicon on insulator,based on 1×2 line tapered multimode interference (MMI) coupler.Comparing with the conventional straight MMI coupler,the device is ～40% shorter in length.The device exhibits uniformity of 1 3dB and excess loss of 2 5dB.展开更多
This research was conducted to study the performances of the heat and multilayer reflection insulators used for buildings in South Korea to realize eco-friendly, low-energy-consumption, green construction, and to cont...This research was conducted to study the performances of the heat and multilayer reflection insulators used for buildings in South Korea to realize eco-friendly, low-energy-consumption, green construction, and to contribute to energy consumption reduction in buildings and to the nation＇s greenhouse gas emission reduction policy （targeting 30% reduction compared to BAUCousiness as usual） by 2020）. The heat insulation performance test is about the temperatures on surfaces of test piece. The high air temperature and the low air temperature were measured to determine the overall heat transfer coefficient and thermal conductivity. The conclusions are drawn that the heat transmission coefficients for each type of existing reflection insulator are： A-1 （0.045 W/（m-K））, A-2 （0.031 W/（m.K））, A-3 （0.042 W/（m.K））, A-4 （0.078 W/（m.K））, and the average heat conductivity is 0.049 W/（m-K）; The heat conductivity for each type of Styrofoam insulator are 0.030 W/（m.K） for B-l, 0.032 W/（m-K） for B-2, 0.037 W/（m＇K） for B-3, 0.037 W/（m.K） for B-4, and the average heat conductivity is 0.035 W/（m＇K） regardless of the thickness of the insulator; The heat conductivity values of the multilayer reflection insulators are converted based on the thickness and type C-1 （0.020 W/（m.K））, C-2 （0.018 W/（m.K））, C-3 （0.016 W/（m.K））, and C-4 （0.012 W/（m.K））; The multilayer reflection insulator keeps the indoor-side surface temperature high （during winter） or low （in summer）, enhances the comfort of the building occupants, and conducts heating and moisture resistance to prevent dew condensation on the glass-outer-wall surface.展开更多
An organic thin-film transistor （OTFT） with an OTS/SiO2 bilayer gate insulator and a MoO3/AI electrode configuration between gate insulator and source/drain electrodes has been investigated. A thermally grown SiO2 l...An organic thin-film transistor （OTFT） with an OTS/SiO2 bilayer gate insulator and a MoO3/AI electrode configuration between gate insulator and source/drain electrodes has been investigated. A thermally grown SiO2 layer is used as the OTFT gate dielectric and copper phthalocyanine（CuPc） is used as an active layer. This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility, reduces the threshold voltage, and improves the on/off ratio simultaneously. The device with a MoO3/Al electrode has shown similar Ids compared to the device with an Au electrode at the same gate voltage. Our results indicate that using a double-layer of electrodes and a double-layer of insulators is an effective way to improve OTFT performance.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.12274472,12494594,12494591,and 92165204)National Key Research and Development Program of China(Grant No.2022YFA1402802)+2 种基金Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices(Grant No.2022B1212010008)Guangdong Fundamental Research Center for Magnetoelectric Physics(Grant No.2024B0303390001)Guangdong Provincial Quantum Science Strategic Initiative(Grant No.GDZX2401010)。
文摘We investigate the interplay between the pseudogap state and d-wave superconductivity in the two-dimensional doped Hubbard model by employing an eight-site cluster dynamical mean-field theory method.By tuning electron hopping parameters,the strong-coupling pseudogap in the two-dimensional Hubbard model can be either enhanced or suppressed in the doped Mott insulator regime.We find that in underdoped cases,the closing of pseudogap leads to a significant enhancement of superconductivity,indicating competition between the two in the underdoped regime.In contrast,at large dopings,suppressing the pseudogap is accompanied by a concurrent decrease in the superconducting transition temperature Tc,which can be attributed to a reduction in antiferromagnetic correlations behind both the pseudogap and superconductivity.We elucidate this evolving relationship between pseudogap and superconductivity across different doping regimes.
基金support by the National Natural Sci-ence Foundation of China(Grant No.12274477)the De-partment of Science and Technology of Guangdong Provincein China(Grant No.2019QN01X061)。
文摘In moiré-patterned van der Waals structures of transition metal dichalcogenides,correlated insulators can form under integer and fractional fillings,whose transport properties are governed by various quasiparticle excitations including holons,doublons and interlayer exciton insulators.Here we theoretically investigate the nearest-neighbor inter-site hoppings of holons and interlayer exciton insulators.Our analysis indicates that these hopping strengths are significantly enhanced compared to that of a single carrier.The underlying mechanism can be attributed to the strong Coulomb interaction between carriers at different sites.For the interlayer exciton insulator consisting of a holon and a carrier in different layers,we have also obtained its effective Bohr radius and energy splitting between the ground and the first-excited states.
基金supported by the National Natural Science Foundation of China (Grant Nos.11874141,12174059,and 11604134)。
文摘Ferroelectric topological insulators realized in heterostructures of two topologically trivial two-dimensional materials have recently attracted significant interest. Using first-principles calculations combined with topological quantum chemistry, we investigate bilayer α-In_(2) Se_(3)(2 L-In_(2) Se_(3)) in van der Waals heterostructures with XSe(X = Ga, In, Tl) substrates within space group P 3m1(No. 156). We show that the emergence of ferroelectricity-driven topological phase transitions in these systems is dictated by fundamental symmetry principles rather than material-specific effects. The band bending at the XSe/2 L-In_(2) Se_(3) interface enables topological band inversions, with higher-electron-affinity substrates such as GaSe and TlSe favoring the transition. Remarkably, GaSe/2 L-In_(2) Se_(3) exhibits a reversible transition between topological and trivial insulating phases upon polarization switching, while TlSe/2 L-In_(2) Se_(3) undergoes sequential transitions from a topological insulator to a trivial insulator and eventually to a metallic state. This multistate manipulation highlights a viable route for designing tunable, low-power, multi-functional electronic devices.
基金supported by the National Natu-ral Science Foundation of China(Grants No.12174220 and No.12074217)the Shandong Provincial Science Foundation for Excellent Young Scholars(Grant No.ZR2023YQ001)+1 种基金the Taishan Young Scholar Program of Shandong Provincethe Qilu Young Scholar Pro-gram of Shandong University.
文摘Higher-order band topology not only enriches our understanding of topological phases but also unveils pioneering lower-dimensional boundary states,which harbors substantial potential for next-generation device applications.The distinct electronic configurations and tunable attributes of two-dimensional materials position them as a quintessential platform for the realization of second-order topological insulators(SOTIs).This article provides an overview of the research progress in SOTIs within the field of two-dimensional electronic materials,focusing on the characterization of higher-order topological properties and the numerous candidate materials proposed in theoretical studies.These endeavors not only enhance our understanding of higher-order topological states but also highlight potential material systems that could be experimentally realized.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.12064034 and 11562017)the Leading Talents Program of Science and Technology Innovation in Ningxia Hui Autonomous Region,China(Grant No.2020GKLRLX08)the Natural Science Foundation of Ningxia Hui Autonomous Region,China(Grant No.2024AAC05040)。
文摘Atmospheric particle adsorption on insulator surfaces,coupled with humid environments,significantly affects contamination flashover,necessitating a clear understanding of the electric field distribution on insulator surfaces with adsorbed particles.This is crucial for accurately assessing insulator safety and informing critical decision-making.Although previous research has demonstrated that particle arrangement significantly influences the electric field distribution around transmission lines,an in-depth analysis of its effects on insulator surfaces remains lacking.To address this gap,this study establishes a composite insulator model to examine how three types of spherical contamination layers affect the electric field distribution on insulator surfaces under varying environmental conditions.The results reveal that in dry environments,the electric field strength at the apex of single-particle contamination layers increases with the particle size and relative permittivity.For the double-particle contamination layers,the electric field intensity on the insulator surface decreases as the particle spacing increases,and larger particles are more likely to attract smaller charged particles.For triple-particle contamination layers arranged in a triangular pattern,the maximum surface field strength is nearly double that of the chain-arranged particles.Furthermore,within the chain-arranged triple-particle contamination layers,a large-small-large size arrangement has a more pronounced impact on the surface electric field than a small-large-small size arrangement.In humid environments,the surface electric field strength of insulators decreases with increasing contamination levels.These findings are of significant theoretical and practical importance for ensuring the safe operation of power systems.
基金supported by the Natural Science Foundation of Guangdong Province of China(Grant No.2025A1515011071)the National Natural Science Foundation of China(Grant Nos.92065110,11974048,and 12074334)the Beijing Municipal Natural Science Foundation Key Research Topics(Grant No.Z230006)。
文摘Recent studies have successfully demonstrated high-Tc superconductivity in bilayer nickelate La3Ni2O7.However,research on modulating the structural and transport characteristics of La3Ni2O7 films by applying“chemical”compressive pressure through cation substitution is still limited.Here,we address this issue in the La_(3−x)Nd_(x)Ni_(2)O_(7)(x=0,1.0,1.5,2.0,and 2.5)thin film samples.It was found that using Nd3+with a smaller radius instead of La3+can reduce the c-axis lattice constant and shift the metal-insulator transition(MIT)temperature TMIT.To probe the origin of the MIT at cryogenic temperatures,experimental measurements of magnetoresistance were conducted,and theoretical analysis was carried out using the Kondo model,Hikami-Larkin-Nagaoka equation,and other methods.The results indicate that as Nd doping rises,the contributions of the Kondo effect and two-dimensional weak localization(WL)first decrease and then increase.The total contribution of WL and the Kondo effect in the mid-doped La_(1.5)Nd_(1.5)Ni_(2)O_(7)sample was the smallest,which to some extent explains the changes in TMIT.The Kondo effect dominates in other La_(3−x)Nd_(x)Ni_(2)O_(7)(x=0,1.0,2.0,and 2.5)samples.This work demonstrates that cation doping has a significant impact on bilayer nickelates,providing experimental evidence for understanding the physical mechanism of the MIT in bilayer nickelates.
基金supported by the National Key Research and Development Program of China (Grant Nos. 2023YFA1406100 and 2021YFA1400200)the National Natural Science Foundation of China (Grant Nos. 12025408 and 12174424)+2 种基金the Youth Innovation Promotion Association of Chinese Academy of Scineces (Grant No. 2023007)support from the National Natural Science Foundation of China (Grant No. 11904272)the Open Fund of Hubei Provincial Key Laboratory of Metallurgical Industry Process Systems Science (Grant No. Z202202)。
文摘The cubic pyrochlore Tl_(2)Ru_(2)O_(7) undergoes concurrently a metal–insulator transition (MIT) and a first-order structural transition at T_(MIT)≈120 K,below which the system was found to form one-dimensional spin-one Haldane chains associated with an orbital ordering of Ru-4d electrons.With an aim to tune and access distinct ground states with strong entanglements of multiple degrees of freedom,i.e.,spin,orbital,charge,and lattice,we utilize a high-pressure approach to regulate the MIT of this system.Our detailed resistivityρ(T) measurements on the polycrystalline Tl_(2)Ru_(2)O_(7) samples under various hydrostatic pressures indeed reveal an unusual evolution of the electronic ground states.At first,the MIT is suppressed monotonically from 120 K at ambient to about 70 K at 1.5 GPa and then vanishes suddenly at about 1.8 GPa without achieving a metallic ground state.Meanwhile,the system evolves into a semiconducting ground state with magnitude ofρ(T) in the entire temperature range enhanced gradually by further increasing pressure.Prior to the abrupt disappearance of MIT,a new electronic order manifested as a kink-like anomaly inρ(T) emerges at T_(0)>T_(MIT) at 1.2 GPa and it continues to increase with pressure,producing a tricritical-point-like behavior in the T–P phase diagram of Tl_(2)Ru_(2)O_(7).The presence of two successive transitions at T_(0 )and T_(MIT )in the pressure range 1.2–1.5 GPa indicates an inhomogeneous electronic state nearby the tricritical point.At P≥3 GPa,another broad anomaly emerges inρ(T) at T_(1)>T_(0),and T_(1)continuously increases with pressure,dividing the semiconductingρ(T) into distinct thermally activated regions.These rich phenomena in the pressurized Tl_(2)Ru_(2)O_(7) should originate from the complex interplay of strongly entangled multiple quantum degrees of freedom in the system near the localized-to-itinerant crossover regime.
基金supported by the Natural Science Basic Research Program of Shaanxi Province(No.2024JC-JCQN-06)the National Natural Science Foundation of China(Nos.12474337,12304370)Fundamental Research Funds for the Central Universities(No.xzy012024135).
文摘Topological insulators represent a new phase of matter,characterized by conductive surfaces,while their bulk remains insulating.When the dimension of the system exceeds that of the topological state by at least two,the insulators are classified as higher-order topological insulators(HOTI).The appearance of higher-order topological states,such as corner states,can be explained by the filling anomaly,which leads to the fractional spectral charges in the unit cell.Previously reported fractional charges have been quite limited in number and size.In this work,based on the two-dimensional(2D)Su-Schrieffer-Heeger model lattice,we demonstrated a new class of HOTIs with adjustable fractional charges that can take any value ranging from 0 to 1,achieved by utilizing the Lorentz transformation.Furthermore,this transformation generates novel bound-state-in-continuum-like corner states,even when the lattice is in a topological trivial phase,offering a new approach to light beam localization.This work paves the way for fabricating HOTIs with diverse corner states that offer promising applicative potential.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2023YFA1406400 and 2020YFA0308800)the National Natural Science Foundation of China(Grant No.12474064)。
文摘The excitonic insulator(EI)is a more than 60-year-old theoretical proposal that is still elusive.It is a purely quantum phenomenon involving the spontaneous generation of excitons in quantum mechanics and the spontaneous condensation of excitons in quantum statistics.At this point,the excitons represent the ground state rather than the conventional excited state.Thus,the scarcity of candidate materials is a key factor contributing to the lack of recognized EI to date.In this review,we begin with the birth of EI,presenting the current state of the field and the main challenges it faces.We then focus on recent advances in the discovery and design of EIs based on the first-principles Bethe-Salpeter scheme,in particular the dark-exciton rule guided screening of materials.It not only opens up new avenues for realizing excitonic instability in direct-gap and wide-gap semiconductors,but also leads to the discovery of novel quantum states of matter such as half-EIs and spin-triplet EIs.Finally,we will look ahead to possible research pathways leading to the first recognized EI,both theoretically and computationally.
文摘In this investigation,we delve into the interplay between strong interactions and intricate topological configurations,leading to emergent quantum states such as magnetic topological insulators.The crux of our research centers on elucidating how lattice symmetry modulates antiferromagnetic quantum Hall phenomena.Utilizing the spinful Harper-Hofstadter model enriched with a next-nearest-neighbor(NNN)hopping term,we discern a half-filling bandgap,paving the way for the manifestation of a quantum Hall insulator characterized by a Chern number,C=2.Upon integrating a checkerboardpatterned staggered potential(△)and the Hubbard interaction(U),the system exhibits complex dynamical behaviors.Marginal NNN hopping culminates in a Ne′el antiferromagnetic Mott insulator.In contrast,intensified hopping results in stripe antiferromagnetic configurations.Moreover,in the regime of limited NNN hopping,a C=1 Ne′el antiferromagnetic quantum Hall insulator emerges.A salient observation pertains to the manifestation of a C=1 antiferromagnetic quantum Hall insulator when spin-flip mechanisms are not offset by space group symmetries.These findings chart a pathway for further explorations into antiferromagnetic Quantum Hall States.
基金Project supported by the National Key Research and Development Program of China (Grant Nos. 2021YFA1400900, 2021YFA0718300, and 2021YFA1402100)the National Natural Science Foundation of China (Grant Nos. 12174461, 12234012, 12334012, and 52327808)。
文摘We investigate the localization and topological properties of the Haldane model under the influence of random flux and Anderson disorder. Our localization analysis reveals that random flux induces a transition from insulating to metallic states, while Anderson localization only arises under the modulation of Anderson disorder. By employing real-space topological invariant methods, we demonstrates that the system undergoes topological phase transitions under different disorder manipulations, whereas random flux modulation uniquely induces topological Anderson insulator phases, with the potential to generate states with opposite Chern numbers. These findings highlight the distinct roles of disorder in shaping the interplay between topology and localization, providing insights into stabilizing topological states and designing robust topological quantum materials.
基金Project supported by the National Key R&D Program of China (Grant No. 2022YFA1403800)the National Natural Science Foundation of China (Grant Nos. 12250008 and 12188101)+1 种基金the Project for Young Scientists in Basic Research (Grant No. YSBR-059)performed in part at the Aspen Center for Physics, supported by the National Natural Science Foundation of China (Grant No. PHY2210452)。
文摘We theoretically study the effect of a uniform orbital magnetic field on spin waves in a triangular lattice tetrahedral antiferromagnetic insulator without spin–orbit coupling. Through symmetry analysis and microscopic calculation, we show that the optical spin wave mode at the Brillouin zone center can acquire a small orbital magnetic moment, although it exhibits no magnetic moment from the Zeeman coupling. Our results are potentially applicable to intercalated van der Waals materials and twisted double-bilayer graphene.
基金supported by the National Key Research&Development Program of China(Grant Nos.2022YFA1403500 and 2021YFA1400500)the National Science Foundation of China(Grant Nos.62321004,12234001,and 12474215)+1 种基金supported by New Cornerstone Science Foundationa fellowship and a CRF award from the Research Grants Council of the Hong Kong Special Administrative Region,China(Grant Nos.HKUST SRFS2324-6S01 and C7037-22GF)。
文摘Electron-hole interactions play a crucial role in determining the optoelectronic properties of materials,and in lowdimensional systems this is especially true due to the decrease of screening.In this review,we focus on one unique quantum phase induced by the electron-hole interaction in two-dimensional systems,known as“exciton insulators”(EIs).Although this phase of matter has been studied for more than half a century,suitable platforms for its stable realization remain scarce.We provide an overview of the strategies to realize EIs in accessible materials and structures,along with a discussion on some unique properties of EIs stemming from the band structures of these materials.Additionally,signatures in experiments to distinguish EIs are discussed.
文摘The flashover of insulator strings occurring at normal working voltages undercontaminated/polluted conditions, obviously deserves serious consideration. Though much researchhas been gone into pollution-induced flashover phenomena but grey areas still exist in ourknowledge. In the present experimental study the breakdown (flashover) voltages across gaps oninsulator top surfaces and gaps between sheds (on the underside of an insulator), also the flashoverstudies on a single unit and a 3-unit insulator strings were carried out. An attempt has been madeto correlate the values obtained for all the cases. From the present investigation it was found thatresistance measurement of individual units of a polluted 3-unit string before and after flashoverindicates that strongly differing resistances could be the cause of flashover of ceramic discinsulator strings.
基金Project(2009AA03Z110) supported by the National High Technology Research and Development Program of ChinaProject (2011CB012902) supported by the National Basic Research Program of China
文摘The application of electric current pulse（ECP） to a solidification process refers to the immersion of electrodes into the liquid metal and the employment of thermal insulators on the upper surface of metal.In order to ascertain the effects of these two factors on the structure refinement by the ECP technique,three groups of experiments were performed with different types of electrodes or various thermal insulators.By the comparison between solidification structures under different conditions,it is followed that the electrode and the thermal insulator have an obvious influence on the grain refinement under an applied ECP,and further analysis demonstrates that the thermal conditions of the liquid surface play a vital role in the modification of solidification structure.Also,the results support the viewpoint that most of the equiaxed grains originate from the liquid surface subjected to an ECP.
文摘Both the ceramic and the composite insulators have their own advantages and disadvantages when compared with each other. It is a reasonable idea to combine their merits together to design a novel insulator. The key measure of the novel insulator suggested in this paper is to add an annular metal sheet coated with high temperature vulcanisation (HTV) silicone rubber (SIR) at the base of the traditional ceramic insulator cap. The HTVSIR covering on the exterior of the metal sheet can lengthen the creepage distance. The metal sheet can uniform the electric stress, reduce its maximum value and modify its direction on one insulator unit and acts as equalizing ring on an insulator string. The factors stated above are the main reasons why the novel insulator has better insulating performance, including lower leakage current and flashover voltage, especially under polluted conditions. Simultaneously, the novel insulator can overcome the disadvantages of the ordinary remedies which have been widely used to improve the performance of ceramic insulators against pollution. The experimental results obtained in the laboratory were in good agreement with the theoretical analysis and demonstrated the novel insulator's effectiveness.
文摘To overcome the floating-body effect and self-heating effect of SOI devices,the drain and source on insulator (DSOI) structure is fabricated and tested.The low dose developed recently and low energy local SIMOX technology combined with the conventional CMOS technology is used to fabricate this kind of devices.Using this method,DSOI,SOI,and bulk MOSFETs are successfully integrated on a single chip.Test results show that the drain induced barrier lowering effect is suppressed.The breakdown voltage drain-to-source is greatly increased for DSOI devices due to the elimination of the floating-body effect.And the self-heating effect is also reduced and thus the reliability increased.At the same time,the advantage of SOI devices in speed is maintained.The technology makes it possible to integrate low voltage,low power,low speed SOI devices or high voltage,high power,high speed DSOI devices on one chip and it offers option for developing system-on-chip technology.
文摘An ultracompact 3 dB coupler is designed and fabricated in silicon on insulator,based on 1×2 line tapered multimode interference (MMI) coupler.Comparing with the conventional straight MMI coupler,the device is ～40% shorter in length.The device exhibits uniformity of 1 3dB and excess loss of 2 5dB.
基金Project(NRF-2010-0024155) supported by the National Research Foundation of Korea
文摘This research was conducted to study the performances of the heat and multilayer reflection insulators used for buildings in South Korea to realize eco-friendly, low-energy-consumption, green construction, and to contribute to energy consumption reduction in buildings and to the nation＇s greenhouse gas emission reduction policy （targeting 30% reduction compared to BAUCousiness as usual） by 2020）. The heat insulation performance test is about the temperatures on surfaces of test piece. The high air temperature and the low air temperature were measured to determine the overall heat transfer coefficient and thermal conductivity. The conclusions are drawn that the heat transmission coefficients for each type of existing reflection insulator are： A-1 （0.045 W/（m-K））, A-2 （0.031 W/（m.K））, A-3 （0.042 W/（m.K））, A-4 （0.078 W/（m.K））, and the average heat conductivity is 0.049 W/（m-K）; The heat conductivity for each type of Styrofoam insulator are 0.030 W/（m.K） for B-l, 0.032 W/（m-K） for B-2, 0.037 W/（m＇K） for B-3, 0.037 W/（m.K） for B-4, and the average heat conductivity is 0.035 W/（m＇K） regardless of the thickness of the insulator; The heat conductivity values of the multilayer reflection insulators are converted based on the thickness and type C-1 （0.020 W/（m.K））, C-2 （0.018 W/（m.K））, C-3 （0.016 W/（m.K））, and C-4 （0.012 W/（m.K））; The multilayer reflection insulator keeps the indoor-side surface temperature high （during winter） or low （in summer）, enhances the comfort of the building occupants, and conducts heating and moisture resistance to prevent dew condensation on the glass-outer-wall surface.
文摘An organic thin-film transistor （OTFT） with an OTS/SiO2 bilayer gate insulator and a MoO3/AI electrode configuration between gate insulator and source/drain electrodes has been investigated. A thermally grown SiO2 layer is used as the OTFT gate dielectric and copper phthalocyanine（CuPc） is used as an active layer. This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility, reduces the threshold voltage, and improves the on/off ratio simultaneously. The device with a MoO3/Al electrode has shown similar Ids compared to the device with an Au electrode at the same gate voltage. Our results indicate that using a double-layer of electrodes and a double-layer of insulators is an effective way to improve OTFT performance.
