This paper presents a wide locking range and low DC power injection-locked frequency tripler for Kband frequency synthesizers application. The proposed ILFT employs a variable current source to decouple the injection ...This paper presents a wide locking range and low DC power injection-locked frequency tripler for Kband frequency synthesizers application. The proposed ILFT employs a variable current source to decouple the injection signal path and the bias current so that the third harmonic of the injection signal can be maximized to enlarge the locking range. Meanwhile, a 2-bit digital control capacity array is used to further increase the output frequency locking range. It is implemented in a 130-nm CMOS process and occupies a chip area of 0.7 ×0.8 mm^2 without pads. The measured results show that the proposed ILFT can achieve a whole locking range from 18 to21 GHz under the input signal of 4 dBm and the core circuit dissipates only 4 m W of DC power from a 0.8 V supply voltage. The measured phase noise degradation from that of the injection signal is only 10 dB at 1 MHz offset.展开更多
This paper proposes CMOS LC-tank divide-by-3 injection locked frequency dividers(ILFDs)fabricated in 0.18μn and 90nm CMOS process and describes the circuit design,operation principle and measurement results of the IL...This paper proposes CMOS LC-tank divide-by-3 injection locked frequency dividers(ILFDs)fabricated in 0.18μn and 90nm CMOS process and describes the circuit design,operation principle and measurement results of the ILFDs.The ILFDs use two injection series-MOSFETs across the LC resonator and a differential injection signal is applied to the gates of injection MOSFETs.The direct-injection divide-by-3 ILFDs are potential for radio-frequency application and can have wide locking range.展开更多
In this paper, a 30 GHz wide locking-range (26.2 GHz-35.7 GHz) direct injection-locked frequency divider (ILFD), which operating in the millimeter-wave (MMW) band, is presented. The locking range of the ILFD is extend...In this paper, a 30 GHz wide locking-range (26.2 GHz-35.7 GHz) direct injection-locked frequency divider (ILFD), which operating in the millimeter-wave (MMW) band, is presented. The locking range of the ILFD is extended by using differential injection topology. Besides, varactors are used in RLC resonant tank for extending the frequency tuning range. The post simulation results show that a wide locking-range of 9.5 GHz (30.7%) is achieved. When the VCO output frequency varies from 26.85 GHz to 34.42 GHz, the proposed ILFD can achieve divide-by-two correctly. Designed in 0.13 μm CMOS technology, the ILFD occupies a core area of 0.76 mm2 while drawing 7 mA of current from 2.5 V power supply.展开更多
We present a 31–45.5 GHz injection-locked frequency divider(ILFD) implemented in a standard 90-nm CMOS process. To reduce parasitic capacitance and increase the operating frequency, an NMOS-only cross-coupled pair is...We present a 31–45.5 GHz injection-locked frequency divider(ILFD) implemented in a standard 90-nm CMOS process. To reduce parasitic capacitance and increase the operating frequency, an NMOS-only cross-coupled pair is adopted to provide negative resistance. Acting as an adjustable resistor, an NMOS transistor with a tunable gate bias voltage is connected to the differential output terminals for locking range extension. Measurements show that the designed ILFD can be fully functional in a wide locking range and provides a good figure-of-merit. Under a 1 V tunable bias voltage, the self-resonant frequency of the divider is 19.11 GHz and the maximum locking range is 37.7% at 38.5 GHz with an input power of 0 d Bm. The power consumption is 2.88 m W under a supply voltage of 1.2 V. The size of the chip including the pads is 0.62 mm×0.42 mm.展开更多
Enhancing resonance frequency of strong optical studied. Resonance frequency is increased from technique. We experimentally demonstrate that injection-locked semiconductor lasers is experimentally 4.1 to 53.9 GHz by t...Enhancing resonance frequency of strong optical studied. Resonance frequency is increased from technique. We experimentally demonstrate that injection-locked semiconductor lasers is experimentally 4.1 to 53.9 GHz by the optical injection locking （OIL） resonance frequency is strictly equal to the frequency spacing between the cavity modes of the master and slave lasers under strong OIL condition. This result provides valuable information to improve OIL theory.展开更多
为了改善W波段全波段Schottky二极管三倍频器高端性能,建立倍频二极管实际安装电路环境下的三维精确仿真模型.在传统去嵌入法提取二极管等效电路参数工作基础上,改进了阻抗参数提取方法.采用UMS公司的DBES105a双Schottky结二极管作为倍...为了改善W波段全波段Schottky二极管三倍频器高端性能,建立倍频二极管实际安装电路环境下的三维精确仿真模型.在传统去嵌入法提取二极管等效电路参数工作基础上,改进了阻抗参数提取方法.采用UMS公司的DBES105a双Schottky结二极管作为倍频器件,将二极管封装、焊盘(安装二极管的微带端线)及邻近的腔体空间作为一个子区域进行三维建模分析,结合Schottky结的非线性模型,深入研究了焊盘尺寸、管子安装高度及腔体尺寸对输入输出阻抗宽带特性的影响.在此基础上,采用场路结合的仿真技术,优化设计了W波段宽带无源三倍频器.实验测试结果表明,在约为20 d Bm功率激励下,所设计的三倍频器在75~110 GHz内输出功率典型值为5 d Bm,功率波动小于±1.25 d Bm,实现了倍频器在W波段全波段优良的功率平坦度特性.展开更多
A 40-GHz phase-locked loop（PLL） frequency synthesizer for 60-GHz wireless communication applications is presented. The electrical characteristics of the passive components in the VCO and LO buffers are accurately ex...A 40-GHz phase-locked loop（PLL） frequency synthesizer for 60-GHz wireless communication applications is presented. The electrical characteristics of the passive components in the VCO and LO buffers are accurately extracted with an electromagnetic simulator HFSS. A differential tuning technique is utilized in the voltage controlled oscillator（VCO） to achieve higher common-mode noise rejection and better phase noise performance. The VCO and the divider chain are powered by a 1.0 V supply while the phase-frequency detector（PFD）and the charge pump（CP） are powered by a 2.5 V supply to improve the linearity. The measurement results show that the total frequency locking range of the frequency synthesizer is from 37 to 41 GHz, and the phase noise from a 40 GHz carrier is –97.2 dBc/Hz at 1 MHz offset. Implemented in 65 nm CMOS, the synthesizer consumes a DC power of 62 m W, including all the buffers.展开更多
基金supported by the National Natural Science Foundation of China(No.61376037)the National Twelve-Five Project(No.513***)
文摘This paper presents a wide locking range and low DC power injection-locked frequency tripler for Kband frequency synthesizers application. The proposed ILFT employs a variable current source to decouple the injection signal path and the bias current so that the third harmonic of the injection signal can be maximized to enlarge the locking range. Meanwhile, a 2-bit digital control capacity array is used to further increase the output frequency locking range. It is implemented in a 130-nm CMOS process and occupies a chip area of 0.7 ×0.8 mm^2 without pads. The measured results show that the proposed ILFT can achieve a whole locking range from 18 to21 GHz under the input signal of 4 dBm and the core circuit dissipates only 4 m W of DC power from a 0.8 V supply voltage. The measured phase noise degradation from that of the injection signal is only 10 dB at 1 MHz offset.
文摘This paper proposes CMOS LC-tank divide-by-3 injection locked frequency dividers(ILFDs)fabricated in 0.18μn and 90nm CMOS process and describes the circuit design,operation principle and measurement results of the ILFDs.The ILFDs use two injection series-MOSFETs across the LC resonator and a differential injection signal is applied to the gates of injection MOSFETs.The direct-injection divide-by-3 ILFDs are potential for radio-frequency application and can have wide locking range.
文摘In this paper, a 30 GHz wide locking-range (26.2 GHz-35.7 GHz) direct injection-locked frequency divider (ILFD), which operating in the millimeter-wave (MMW) band, is presented. The locking range of the ILFD is extended by using differential injection topology. Besides, varactors are used in RLC resonant tank for extending the frequency tuning range. The post simulation results show that a wide locking-range of 9.5 GHz (30.7%) is achieved. When the VCO output frequency varies from 26.85 GHz to 34.42 GHz, the proposed ILFD can achieve divide-by-two correctly. Designed in 0.13 μm CMOS technology, the ILFD occupies a core area of 0.76 mm2 while drawing 7 mA of current from 2.5 V power supply.
基金Project supported by the National Basic Research Program(973)of China(No.2010CB327404)the National High-Tech R&D Program(863)of China(No.2011AA10305)the National Natural Science Foundation of China(Nos.60901012 and 61106024)
文摘We present a 31–45.5 GHz injection-locked frequency divider(ILFD) implemented in a standard 90-nm CMOS process. To reduce parasitic capacitance and increase the operating frequency, an NMOS-only cross-coupled pair is adopted to provide negative resistance. Acting as an adjustable resistor, an NMOS transistor with a tunable gate bias voltage is connected to the differential output terminals for locking range extension. Measurements show that the designed ILFD can be fully functional in a wide locking range and provides a good figure-of-merit. Under a 1 V tunable bias voltage, the self-resonant frequency of the divider is 19.11 GHz and the maximum locking range is 37.7% at 38.5 GHz with an input power of 0 d Bm. The power consumption is 2.88 m W under a supply voltage of 1.2 V. The size of the chip including the pads is 0.62 mm×0.42 mm.
基金supported by the National "973" Program of China(Nos.2012CB315606 and 2010CB328201)
文摘Enhancing resonance frequency of strong optical studied. Resonance frequency is increased from technique. We experimentally demonstrate that injection-locked semiconductor lasers is experimentally 4.1 to 53.9 GHz by the optical injection locking （OIL） resonance frequency is strictly equal to the frequency spacing between the cavity modes of the master and slave lasers under strong OIL condition. This result provides valuable information to improve OIL theory.
基金Supported by the National Key R&D Program of China Grant(2018YFB1801504)President Funding of China Academy of Engineering Physics with No.YZJJLX2018009。
文摘为了改善W波段全波段Schottky二极管三倍频器高端性能,建立倍频二极管实际安装电路环境下的三维精确仿真模型.在传统去嵌入法提取二极管等效电路参数工作基础上,改进了阻抗参数提取方法.采用UMS公司的DBES105a双Schottky结二极管作为倍频器件,将二极管封装、焊盘(安装二极管的微带端线)及邻近的腔体空间作为一个子区域进行三维建模分析,结合Schottky结的非线性模型,深入研究了焊盘尺寸、管子安装高度及腔体尺寸对输入输出阻抗宽带特性的影响.在此基础上,采用场路结合的仿真技术,优化设计了W波段宽带无源三倍频器.实验测试结果表明,在约为20 d Bm功率激励下,所设计的三倍频器在75~110 GHz内输出功率典型值为5 d Bm,功率波动小于±1.25 d Bm,实现了倍频器在W波段全波段优良的功率平坦度特性.
基金supported by the National Natural Science Foundation of China(Nos.61020106006,61331003,61222405,JCYJ20120616142625998,JCYJ20130401173110245)
文摘A 40-GHz phase-locked loop（PLL） frequency synthesizer for 60-GHz wireless communication applications is presented. The electrical characteristics of the passive components in the VCO and LO buffers are accurately extracted with an electromagnetic simulator HFSS. A differential tuning technique is utilized in the voltage controlled oscillator（VCO） to achieve higher common-mode noise rejection and better phase noise performance. The VCO and the divider chain are powered by a 1.0 V supply while the phase-frequency detector（PFD）and the charge pump（CP） are powered by a 2.5 V supply to improve the linearity. The measurement results show that the total frequency locking range of the frequency synthesizer is from 37 to 41 GHz, and the phase noise from a 40 GHz carrier is –97.2 dBc/Hz at 1 MHz offset. Implemented in 65 nm CMOS, the synthesizer consumes a DC power of 62 m W, including all the buffers.
