we report n Bn photodetectors based on In As0.91 Sb0.09 with a 100% cut-off wavelength of 4.75 μm at 300 K. The band of an n Bn detector is similar to that of a standard pin detector, but there is special wide bandga...we report n Bn photodetectors based on In As0.91 Sb0.09 with a 100% cut-off wavelength of 4.75 μm at 300 K. The band of an n Bn detector is similar to that of a standard pin detector, but there is special wide bandgap Al As0.08 Sb0.92 barrier layer in the n Bn detector, in which the depletion region of n Bn detector exists. The n Bn design has many advantages, such as low dark current and high quantum efficiency, because the n Bn design can suppress the generation–recombination(GR)current that is the main composition of standard pin detector dark current. The constant slope of the Arrhenius plot of J0–1/T indicates the absence of the generation–recombination dark current. We fabricate an n Bn detector with a quantum efficiency(QE) maximum of ~ 60% under-0.2-V bias voltage. The In As Sb n Bn detectors may be a competitive candidate for midwavelength infrared detector.展开更多
The etching and passivation processes of very long wavelength infrared(VLWIR)detector based on the InAs/GaSb/AlSb type-II superlattice have been studied.By studying the effect of each component in the citric acid solu...The etching and passivation processes of very long wavelength infrared(VLWIR)detector based on the InAs/GaSb/AlSb type-II superlattice have been studied.By studying the effect of each component in the citric acid solution(citric acid,phosphoric acid,hydrogen peroxide,deionized water),the best solution ratio is obtained.After comparing different passivation materials such as sulfide+SiO_(2),Al_(2)O_(3),Si_(3)N_(4) and SU8,it is found that SU8 passivation can reduce the dark current of the device to a greater degree.Combining this wet etching and SU8 passivation,the of VLWIR detector with a mesa diameter of 500μm is about 3.6Ω·cm^(2) at 77 K.展开更多
Astronomical detection at infrared wavelengths is crucial in astrophysics due to the critical information in this wavelength range.Blocked impurity band(BIB) infrared detectors are desirable for space-based astronomic...Astronomical detection at infrared wavelengths is crucial in astrophysics due to the critical information in this wavelength range.Blocked impurity band(BIB) infrared detectors are desirable for space-based astronomical observation due to their broad response range, low dark currents, high quantum efficiencies, and excellent radiation resistance. In this review, typical BIB device structures and device physics development are first introduced. Subsequently, we discuss progress in Si-based BIB detectors with different doping types and emphasize their applications in space-based infrared detection. Additionally, we discuss recent efforts on pixel performance optimization, response extension, and higher operating temperature devices. Finally,we conclude by proposing the challenges and perspectives of BIB detectors with improved detection performances.展开更多
SiGe offers a low-cost alternative to conventional infrared sensor material systems such as InGaAs, InSb, and HgCdTe for developing near-infrared (NIR) photodetector devices that do not require cooling and can operate...SiGe offers a low-cost alternative to conventional infrared sensor material systems such as InGaAs, InSb, and HgCdTe for developing near-infrared (NIR) photodetector devices that do not require cooling and can operate with relatively low dark current. As a result of the significant difference in thermal expansion coefficients between germanium (Ge) and silicon (Si), tensile strain incorporated into SiGe detector devices through specialized growth processes can extend their NIR wavelength range of operation. We have utilized high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology to fabricate Ge based p-i-n (PIN) detector devices on 300 mm Si wafers. The two-step device fabrication process, designed to effectively reduce the density of defects and dislocations arising during deposition that form recombination centers which can result in higher dark current, involves low temperature epitaxial deposition of Ge to form a thin p<sup>+</sup> seed layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. Phosphorus was then ion-implanted to create devices with n<sup>+</sup> regions of various doping concentrations. Secondary ion mass spectroscopy (SIMS) has been utilized to determine the doping profiles and material compositions of the layers. In addition, electrical characterization of the I-V photoresponse of different devices from the same wafer with various n<sup>+</sup> region doping concentrations has demonstrated low dark current levels (down to below 1 nA at -1 V bias) and comparatively high photocurrent at reverse biases, with optimal response for doping concentration of 5 × 10<sup>19</sup> cm<sup>-3</sup>.展开更多
After being launched into orbit,the geometric calibration of a satellite laser altimeter will reduce errors in laser pointing and ranging caused by satellite vibrations during launch,environmental changes,and thermal ...After being launched into orbit,the geometric calibration of a satellite laser altimeter will reduce errors in laser pointing and ranging caused by satellite vibrations during launch,environmental changes,and thermal effects during long-term operation,which guarantees the accuracy of measurement data.In this study,a satellite laser geometric calibration method combining infrared detectors and corner-cube retroreflectors(CCRs)is proposed.First,a CCR-based laser ranging error calibration method was established,and then a laser pointing error calibration model was derived based on a single infrared detector array.Taking GaoFen-7(GF-7)satellite laser beam 2 as the experimental object,laser geometric calibration was realized using an infrared detector and CCR-measured data.Then,the accuracy of the proposed method was compared with that of other calibration methods,the CMLID and the CMSPR.The results show that the accuracy of the proposed calibration method is equivalent to that of the CMLID and higher than that of the CMSPR.Among them,the accuracy of the laser pointing after calibration using the proposed method is better than 0.8 arcsec,and the elevation accuracy of the laser on flat,sloping,and mountainous terrains is better than 0.11 m,0.30 m,and 1.80 m,respectively.展开更多
The band structure of the confined states is calculated for Si/SiGe multi-quantum well infrared photodetector(M-QWIP).The influence of the Ge component in pseudosubstrate on the energy band structure of Si/Si0.54Ge0.4...The band structure of the confined states is calculated for Si/SiGe multi-quantum well infrared photodetector(M-QWIP).The influence of the Ge component in pseudosubstrate on the energy band structure of Si/Si0.54Ge0.46 multi-quantum wells(MQWs) is investigated.It is found that the high energy levels in the MQWs move up while the low energy levels move down as the Ge component in pseudosubstrate increases.The influence of the barrier width on the energy band structure of MQWs is also studied based on the 6 × 6 k.p method.The results show that the Si barrier between 5 nm and 10 nm is optimized to enhance the intersubband absorption in the MQWs.展开更多
A high injection, large dynamic range, stable detector bias, small area and low power consumption CMOS readout circuit with background current suppression and correlated double sampling (CDS) for a high-resolution inf...A high injection, large dynamic range, stable detector bias, small area and low power consumption CMOS readout circuit with background current suppression and correlated double sampling (CDS) for a high-resolution infrared focal plane array applications is proposed. The detector bias error in this structure is less than 0.1 mV. The input resistance is ideally zero, which is important to obtain high injection efficiency. Unit-cell occupies 10 μm × 15 μm area and consumes less than 0.4 mW power. Charge storag...展开更多
Standard GaAs/AlGaAs quantum well infrared photodetectors(QWIP)have been seriously considered as atechnological choice for the 3^(rd) generation of thermal imagers in the long wave infrared band(LWIR)for some time.Alt...Standard GaAs/AlGaAs quantum well infrared photodetectors(QWIP)have been seriously considered as atechnological choice for the 3^(rd) generation of thermal imagers in the long wave infrared band(LWIR)for some time.Alternative technology like MCT(HgCdTe)was the technology choice of the 2^(nd) generation because of its high quantum efficiency.In the paper,measurements on the QWIP technology will be presented and a comparison with alternative technology will be done.展开更多
We report a type-Ⅱ InAs/GaSb superlattice three-color infrared detector for mid-wave （MW）, long-wave （LW）, and very long-wave （VLW） detections. The detector structure consists of three contacts of NIPIN archite...We report a type-Ⅱ InAs/GaSb superlattice three-color infrared detector for mid-wave （MW）, long-wave （LW）, and very long-wave （VLW） detections. The detector structure consists of three contacts of NIPIN architecture for MW and LW detections, and hetero-junction NIP architecture for VLW detection. It is found that the spectral crosstalks can be significantly reduced by controlling the minority carriers transport via doping beryllium in the two active regions of NIPIN section. The crosstalk detection at MW, LW, and VLW signals are achieved by selecting the bias voltages on the device. At 77K, the cutoff wavelengths of the three-color detection are 5.3μm （at OmV）, 141μm （at 300mV） and 19μm （at -20mV） with the detectivities of 4.6xlO11 cm.Hzl/ZW-1, 2.3×10^10 cm.Hzl/2W-1, and 1.0×10^10cm.Hzl/2W-1 for MW, LW and VLW. The crosstalks of the MW channel, LW channel, and VLW channel are almost 0, 0.25, and 0.6, respectively.展开更多
We propose a periodic structure as an extra absorption layer（i.e., absorber） based on surface plasmon resonance effects, enhancing dual-band absorption in both middle wavelength infrared（MWIR） and long wavelength ...We propose a periodic structure as an extra absorption layer（i.e., absorber） based on surface plasmon resonance effects, enhancing dual-band absorption in both middle wavelength infrared（MWIR） and long wavelength infrared（LWIR）regions. Periodic gold disks are selectively patterned onto the top layer of suspended SiN/VO_2/SiN sandwich-structure.We employ the finite element method to model this structure in COMSOL Multiphysics including a proposed method of modulating the absorption peak. Simulation results show that the absorber has two absorption peaks at wavelengths λ =4.8 μm and λ = 9 μm with the absorption magnitudes more than 0.98 and 0.94 in MWIR and LWIR regions, respectively. In addition, the absorber achieves broad spectrum absorption in LWIR region, in the meanwhile, tunable dual-band absorption peaks can be achieved by variable heights of cavity as well as diameters and periodicity of disk. Thus, this designed absorber can be a good candidate for enhancing the performance of dual band uncooled infrared detector, furthermore, the manufacturing process of cavity can be easily simplified so that the reliability of such devices can be improved.展开更多
To reduce the difficulty of the epitaxy caused by multiple quantum well infrared photodetector(QWIP)with tunnel compensation structure,an improved structure is proposed.In the new structure,the superlattices are locat...To reduce the difficulty of the epitaxy caused by multiple quantum well infrared photodetector(QWIP)with tunnel compensation structure,an improved structure is proposed.In the new structure,the superlattices are located between the tunnel junction and the barrier as the infrared absorption region,eliminating the effect of doping concentration on the well width in the original structure.Theoretical analysis and experimental verification of the new structure are carried out.The experimental sample is a two-cycle device,each cycle contains a tunnel junction,a superlattice infrared absorption region and a thick barrier.The photosurface of the detector is 200×200μm^2 and the light is optically coupled by 45°oblique incidence.The results show that the optimal operating voltage of the sample is-1.1 V,the dark current is 2.99×10^-8A,and the blackbody detectivity is1.352×10^8 cm·Hz^1/2·W^-1at 77 K.Our experiments show that the new structure can work normally.展开更多
Ga_xIn_(1-x)As_(1-y)Sb_y alloys have been grown by atmospheric pressure MOCVD on n-GaSb(Te-doped) substrate.The sohd composition was determined by using electron microprobe.The alloys of GalnAsSb with composition in m...Ga_xIn_(1-x)As_(1-y)Sb_y alloys have been grown by atmospheric pressure MOCVD on n-GaSb(Te-doped) substrate.The sohd composition was determined by using electron microprobe.The alloys of GalnAsSb with composition in miscibility gap were successfully grown.The optical properties of Ga_xIn_(1-x)As_(1-y)Sb_y lavers were characterized by the photoluminescence and the infrared absorption.The spectral responses of p^+-GaInAsSb/p-Ga_xIn_(1-x)As_(1-y)Sb_y/n-GaSb detectors showed wavelength cut off at 2.4μm and detectivity- D~*=5×10~8 cmHz^(1/2)/W at room temperature.展开更多
Infrared thermo detector is a kind of non-contact instrument used to measure the surface temperature of objects.It incorporates high technologies of optics,infrared and electronics,and has been increasingly popularize...Infrared thermo detector is a kind of non-contact instrument used to measure the surface temperature of objects.It incorporates high technologies of optics,infrared and electronics,and has been increasingly popularized in China.Firstly,the advantages and shortcomings of ST2L infrared thermo detector were analyzed.Then based on the requirement of detecting buried geological structures in underground coalmines and the features of ST2L,two projects had been studied to modify ST2L:1)Increasing the resolution of temperature measurements by means of improving the electrical circuit and carrying out field test;2)Realizing flame protection of ST2L and passing the state-level test and appraisement.In addition,actual application experiments had been carried out for detecting underground buried geological structures(fault,fold,crushing zone,crack,porosity,gas and spontaneous combustion areas,etc.).Some good results have been achieved and valuable conclusions have been drawn.展开更多
A new 128×128 element PtSi Schottky barrier infrared image sensor with ITCCD readout structure and PtSi thin film optical cavity detector structure has been fabricated,which has 50μm×50 μm pixels,a fill fa...A new 128×128 element PtSi Schottky barrier infrared image sensor with ITCCD readout structure and PtSi thin film optical cavity detector structure has been fabricated,which has 50μm×50 μm pixels,a fill factor of 40 percent,the nonuniformity of 5% or less and the dynamic range of over or equal to 50 dB.The noise equivalent temperature difference is 0.2 K with f/1.0 optics at 300 K background. In this paper,the principle of operation,design consideration and fabrication technology for the device are described.展开更多
We propose a substrate-free focal plane array （FPA） and the microcantilevers extend from a supporting frame. in this paper. The solid substrate is completely removed, Using finite element analysis, the thermal and m...We propose a substrate-free focal plane array （FPA） and the microcantilevers extend from a supporting frame. in this paper. The solid substrate is completely removed, Using finite element analysis, the thermal and mechanical characterizations of the substrate-free FPA are presented. Because of the large decrease in thermal conductance, the supporting frame is temperature dependent, which brings out a unique feature： the lower the thermal conductance of the supporting frame is, the higher the energy conversion efficiency in the substrate-free FPA will be. The results from the finite element analyses are consistent with our measurements： two types of substrate-free FPAs with pixel sizes of 200×200 and 60×60 um^2 are implemented in the proposed infrared detector. The noise equivalent temperature difference （NETD） values are experimentally measured to be 520 and 300 mK respectively. Further refinements are considered in various aspects, and the substrate-free FPA with a pixel size of 30×30 um^2 has a potential of achieving an NETD value of 10 mK.展开更多
Professor Wei Lu is a leading scientist in infrared physics.He proposed the paradigm of localized manipulation over electrons and photons for infrared detection,addressing the critical challenge of dark current suppre...Professor Wei Lu is a leading scientist in infrared physics.He proposed the paradigm of localized manipulation over electrons and photons for infrared detection,addressing the critical challenge of dark current suppression in long-wave infrared detectors.His direct observation of the Haldane gap in quasi-one-dimensional magnetic materials was one of the earliest experimental validations of the Haldane’s conjecture-a crucial step in the theoretical discoveries of topological phases of matter that led to 2016 Nobel Prize in Physics for Duncan Haldane.Beyond fundamental research,Prof.Lu and his team developed a series of new advanced infrared detectors on multiple remote sensing satellite platforms.During his tenure as the Director of China’s State Key Laboratory of Infrared Physics and President of the Shanghai Institute of Technical Physics(SITP)at the Chinese Academy of Sciences,he led the strategic development of the institutions,contributing to China’s breakthroughs in spaceborne remote sensing technologies.展开更多
Growth of GaInAsSb epilayer by liquid phase epitaxy (LPE) was reported. The LPE system with a hor-izontal sliding graphite boat was employed. The Te-doped (100) GaSb wafer was chosen as substrate. Thephysical properti...Growth of GaInAsSb epilayer by liquid phase epitaxy (LPE) was reported. The LPE system with a hor-izontal sliding graphite boat was employed. The Te-doped (100) GaSb wafer was chosen as substrate. Thephysical properties of the GalnAsSb / GaSb heterostructure were investigated by double crystal X-ray rock-ing diffraction and photoluminescence. The p-GaInAsSb/ n-GaSb photodiode was made by using theseheterostructure materials .The detectivity of the photodiode D* is 4.65 ×10￣9 cm . Hz￣(1 /2) W￣(-1).展开更多
Because of the frequent serious geo-hazards met in constructing sub-river tunnels,the application of geological prediction is necessary to reduce the risk.Taking the Liuyang River Tunnel(10.1 km,with 362 m of the sub-...Because of the frequent serious geo-hazards met in constructing sub-river tunnels,the application of geological prediction is necessary to reduce the risk.Taking the Liuyang River Tunnel(10.1 km,with 362 m of the sub-river part)which is one of the key projects of the dedicated-passenger railway from Wuhan to Guangzhou as an example,the application of integrated geological prediction technologies is expounded in detail.The effects of TSP(tunnel seismic prediction)and infrared water detectors are analyzed as key points in order to summarize the advantages and disadvantages of these devices.展开更多
Ferroelectric Ba0.65Sr0.35TiO3 （BST） thin films on the Pt/Ti/SiO2/Si substrate have been successfully prepared by sol-gel. Such films have approximately 300 nm thicknesses with a remnant polarization of about 2.95 ...Ferroelectric Ba0.65Sr0.35TiO3 （BST） thin films on the Pt/Ti/SiO2/Si substrate have been successfully prepared by sol-gel. Such films have approximately 300 nm thicknesses with a remnant polarization of about 2.95 μ℃/cm^2 and a coercive field of about 21.5 kV/cm. The investigations of X-ray diffraction and atomic force microscopy show that the BST films annealed at 650 ℃ exhibit a tetragonal structure and that the films dominantly consist of large column or grains of about 89 nm in diameter. The curves of the temperature dependence of dielectric coefficient in different frequencies display the curie transition at the temperature around 23 ℃. The dielectric loss tangent of BST thin fdms at 100 kHz is less than 0.04. As a result, the BST thin films are more applicable for fabrication of infrared detector compared with the BST thin films reported previously.展开更多
A review is made of the physics and technology of spectrally selective thermal detectors,especially those operating at non-cryogenic temperatures.The background radiation noise fluctuations are rederived for arbitrary...A review is made of the physics and technology of spectrally selective thermal detectors,especially those operating at non-cryogenic temperatures.The background radiation noise fluctuations are rederived for arbitrary spectral characteristics.Infrared absorption due to phonons and free carriers is discussed followed by a review of published works on artificial infrared absorption materials such as patterned grids,nanoparticles,plasmonic structures,metamaterials and others.Subsequently,the literature of the spectral characteristics of broadband thermal detectors and spectrally selective thermal detectors is reviewed.Finally,the authors speculate on the directions that future research and development in the area will take regarding architectures,sensitivity and spectral characteristics.展开更多
基金National Key Technologies Research and Development Program of China(Grant No.2018YFA0209104)the Major Program of the National Natural Science Foundation of China(Grant No.61790581).
文摘we report n Bn photodetectors based on In As0.91 Sb0.09 with a 100% cut-off wavelength of 4.75 μm at 300 K. The band of an n Bn detector is similar to that of a standard pin detector, but there is special wide bandgap Al As0.08 Sb0.92 barrier layer in the n Bn detector, in which the depletion region of n Bn detector exists. The n Bn design has many advantages, such as low dark current and high quantum efficiency, because the n Bn design can suppress the generation–recombination(GR)current that is the main composition of standard pin detector dark current. The constant slope of the Arrhenius plot of J0–1/T indicates the absence of the generation–recombination dark current. We fabricate an n Bn detector with a quantum efficiency(QE) maximum of ~ 60% under-0.2-V bias voltage. The In As Sb n Bn detectors may be a competitive candidate for midwavelength infrared detector.
基金supported by the National Basic Research Program of China(Grant Nos.2018YFA0209102 and 2019YFA070104)the National Natural Science Foundation of China(Grant Nos.61790581 and 61274013)the Key Research Program of the Chinese Academy of Sciences(Grant No.XDPB22)。
文摘The etching and passivation processes of very long wavelength infrared(VLWIR)detector based on the InAs/GaSb/AlSb type-II superlattice have been studied.By studying the effect of each component in the citric acid solution(citric acid,phosphoric acid,hydrogen peroxide,deionized water),the best solution ratio is obtained.After comparing different passivation materials such as sulfide+SiO_(2),Al_(2)O_(3),Si_(3)N_(4) and SU8,it is found that SU8 passivation can reduce the dark current of the device to a greater degree.Combining this wet etching and SU8 passivation,the of VLWIR detector with a mesa diameter of 500μm is about 3.6Ω·cm^(2) at 77 K.
基金supported by the National Key Research and Development Program of China(Grant No.2020YFB2009301)the National Natural Science Foundation of China(Grant Nos.11933006,61805060,62175045,62104053,62174063,and U2141240)+2 种基金Zhejiang Provincial Natural Science Foundation of China(Grant No.LGF21F050001)Hangzhou Key Research and Development Program(Grant No.20212013B01)Hangzhou Science and Technology Bureau(Grant No.TD2020002)。
文摘Astronomical detection at infrared wavelengths is crucial in astrophysics due to the critical information in this wavelength range.Blocked impurity band(BIB) infrared detectors are desirable for space-based astronomical observation due to their broad response range, low dark currents, high quantum efficiencies, and excellent radiation resistance. In this review, typical BIB device structures and device physics development are first introduced. Subsequently, we discuss progress in Si-based BIB detectors with different doping types and emphasize their applications in space-based infrared detection. Additionally, we discuss recent efforts on pixel performance optimization, response extension, and higher operating temperature devices. Finally,we conclude by proposing the challenges and perspectives of BIB detectors with improved detection performances.
文摘SiGe offers a low-cost alternative to conventional infrared sensor material systems such as InGaAs, InSb, and HgCdTe for developing near-infrared (NIR) photodetector devices that do not require cooling and can operate with relatively low dark current. As a result of the significant difference in thermal expansion coefficients between germanium (Ge) and silicon (Si), tensile strain incorporated into SiGe detector devices through specialized growth processes can extend their NIR wavelength range of operation. We have utilized high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology to fabricate Ge based p-i-n (PIN) detector devices on 300 mm Si wafers. The two-step device fabrication process, designed to effectively reduce the density of defects and dislocations arising during deposition that form recombination centers which can result in higher dark current, involves low temperature epitaxial deposition of Ge to form a thin p<sup>+</sup> seed layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. Phosphorus was then ion-implanted to create devices with n<sup>+</sup> regions of various doping concentrations. Secondary ion mass spectroscopy (SIMS) has been utilized to determine the doping profiles and material compositions of the layers. In addition, electrical characterization of the I-V photoresponse of different devices from the same wafer with various n<sup>+</sup> region doping concentrations has demonstrated low dark current levels (down to below 1 nA at -1 V bias) and comparatively high photocurrent at reverse biases, with optimal response for doping concentration of 5 × 10<sup>19</sup> cm<sup>-3</sup>.
基金supported by National Key Research and Development Program of China:[Grant Number 2020YFE0200800]National Natural Science Foundation of China:[Grant Number 41971426]+1 种基金Special Funds for Creative Research:[Grant Number 2022C61540]Innovative Youth Talents Program,Ministry of Natural Resources of the People’s Republic of China:[Grant Number 12110600000018003930].
文摘After being launched into orbit,the geometric calibration of a satellite laser altimeter will reduce errors in laser pointing and ranging caused by satellite vibrations during launch,environmental changes,and thermal effects during long-term operation,which guarantees the accuracy of measurement data.In this study,a satellite laser geometric calibration method combining infrared detectors and corner-cube retroreflectors(CCRs)is proposed.First,a CCR-based laser ranging error calibration method was established,and then a laser pointing error calibration model was derived based on a single infrared detector array.Taking GaoFen-7(GF-7)satellite laser beam 2 as the experimental object,laser geometric calibration was realized using an infrared detector and CCR-measured data.Then,the accuracy of the proposed method was compared with that of other calibration methods,the CMLID and the CMSPR.The results show that the accuracy of the proposed calibration method is equivalent to that of the CMLID and higher than that of the CMSPR.Among them,the accuracy of the laser pointing after calibration using the proposed method is better than 0.8 arcsec,and the elevation accuracy of the laser on flat,sloping,and mountainous terrains is better than 0.11 m,0.30 m,and 1.80 m,respectively.
基金supported by the National Natural Science Foundation of China (No.60837001)the Major State Basic Research Development Program of China (No.2007CB613404)
文摘The band structure of the confined states is calculated for Si/SiGe multi-quantum well infrared photodetector(M-QWIP).The influence of the Ge component in pseudosubstrate on the energy band structure of Si/Si0.54Ge0.46 multi-quantum wells(MQWs) is investigated.It is found that the high energy levels in the MQWs move up while the low energy levels move down as the Ge component in pseudosubstrate increases.The influence of the barrier width on the energy band structure of MQWs is also studied based on the 6 × 6 k.p method.The results show that the Si barrier between 5 nm and 10 nm is optimized to enhance the intersubband absorption in the MQWs.
文摘A high injection, large dynamic range, stable detector bias, small area and low power consumption CMOS readout circuit with background current suppression and correlated double sampling (CDS) for a high-resolution infrared focal plane array applications is proposed. The detector bias error in this structure is less than 0.1 mV. The input resistance is ideally zero, which is important to obtain high injection efficiency. Unit-cell occupies 10 μm × 15 μm area and consumes less than 0.4 mW power. Charge storag...
文摘Standard GaAs/AlGaAs quantum well infrared photodetectors(QWIP)have been seriously considered as atechnological choice for the 3^(rd) generation of thermal imagers in the long wave infrared band(LWIR)for some time.Alternative technology like MCT(HgCdTe)was the technology choice of the 2^(nd) generation because of its high quantum efficiency.In the paper,measurements on the QWIP technology will be presented and a comparison with alternative technology will be done.
基金Supported by the National Basic Research Program of China under Grant Nos 2014CB643903,2013CB932904,2012CB932701 and 2011CB922201the National Special Funds for the Development of Major Research Equipment and Instruments of China under Grant No 2012YQ140005+7 种基金the Strategic Priority Research Program(B)of the Chinese Academy of Sciences under Grant No XDB01010200the China Postdoctoral Science Foundation-funded Project under Grant No 2014M561029the Program for New Century Excellent Talents in University under Grant No NCET-10-0066the National High-Technology Research and Development Program of China under Grant No 2013AA031502the Science and Technology Innovation Project of Harbin City under Grant No2011RFLXG006the National Natural Science Foundation of China under Grant Nos 61274013,U1037602,61306013,51202046,and 61290303the China Postdoctoral Science Foundation under Grant Nos 2012M510144 and 2013T60366the Fundamental Research Funds for the Central Universities under Grant Nos HIT.NSRIF.2013006 and HIT.BRETIII.201403
文摘We report a type-Ⅱ InAs/GaSb superlattice three-color infrared detector for mid-wave （MW）, long-wave （LW）, and very long-wave （VLW） detections. The detector structure consists of three contacts of NIPIN architecture for MW and LW detections, and hetero-junction NIP architecture for VLW detection. It is found that the spectral crosstalks can be significantly reduced by controlling the minority carriers transport via doping beryllium in the two active regions of NIPIN section. The crosstalk detection at MW, LW, and VLW signals are achieved by selecting the bias voltages on the device. At 77K, the cutoff wavelengths of the three-color detection are 5.3μm （at OmV）, 141μm （at 300mV） and 19μm （at -20mV） with the detectivities of 4.6xlO11 cm.Hzl/ZW-1, 2.3×10^10 cm.Hzl/2W-1, and 1.0×10^10cm.Hzl/2W-1 for MW, LW and VLW. The crosstalks of the MW channel, LW channel, and VLW channel are almost 0, 0.25, and 0.6, respectively.
基金supported by the One Hundred Talents Program of the Chinese Academy of Sciencesthe National Natural Science Foundation of China(Grant Nos.61376083 and 61307077)+1 种基金the China Postdoctoral Science Foundation(Grant Nos.2013M530613 and 2015T80080)the Guangxi Key Laboratory of Precision Navigation Technology and Application(Grant Nos.DH201505,DH201510,and DH201511)
文摘We propose a periodic structure as an extra absorption layer（i.e., absorber） based on surface plasmon resonance effects, enhancing dual-band absorption in both middle wavelength infrared（MWIR） and long wavelength infrared（LWIR）regions. Periodic gold disks are selectively patterned onto the top layer of suspended SiN/VO_2/SiN sandwich-structure.We employ the finite element method to model this structure in COMSOL Multiphysics including a proposed method of modulating the absorption peak. Simulation results show that the absorber has two absorption peaks at wavelengths λ =4.8 μm and λ = 9 μm with the absorption magnitudes more than 0.98 and 0.94 in MWIR and LWIR regions, respectively. In addition, the absorber achieves broad spectrum absorption in LWIR region, in the meanwhile, tunable dual-band absorption peaks can be achieved by variable heights of cavity as well as diameters and periodicity of disk. Thus, this designed absorber can be a good candidate for enhancing the performance of dual band uncooled infrared detector, furthermore, the manufacturing process of cavity can be easily simplified so that the reliability of such devices can be improved.
基金supported by Beijing Natural Science Foundation (No. 4182011)the Development Foundation for Optoelectronics Technology Lab, Ministry of Education (No. PXM 2018_014204_500020)National Natural Science Foundation of China (No. 61751502)
文摘To reduce the difficulty of the epitaxy caused by multiple quantum well infrared photodetector(QWIP)with tunnel compensation structure,an improved structure is proposed.In the new structure,the superlattices are located between the tunnel junction and the barrier as the infrared absorption region,eliminating the effect of doping concentration on the well width in the original structure.Theoretical analysis and experimental verification of the new structure are carried out.The experimental sample is a two-cycle device,each cycle contains a tunnel junction,a superlattice infrared absorption region and a thick barrier.The photosurface of the detector is 200×200μm^2 and the light is optically coupled by 45°oblique incidence.The results show that the optimal operating voltage of the sample is-1.1 V,the dark current is 2.99×10^-8A,and the blackbody detectivity is1.352×10^8 cm·Hz^1/2·W^-1at 77 K.Our experiments show that the new structure can work normally.
文摘Ga_xIn_(1-x)As_(1-y)Sb_y alloys have been grown by atmospheric pressure MOCVD on n-GaSb(Te-doped) substrate.The sohd composition was determined by using electron microprobe.The alloys of GalnAsSb with composition in miscibility gap were successfully grown.The optical properties of Ga_xIn_(1-x)As_(1-y)Sb_y lavers were characterized by the photoluminescence and the infrared absorption.The spectral responses of p^+-GaInAsSb/p-Ga_xIn_(1-x)As_(1-y)Sb_y/n-GaSb detectors showed wavelength cut off at 2.4μm and detectivity- D~*=5×10~8 cmHz^(1/2)/W at room temperature.
文摘Infrared thermo detector is a kind of non-contact instrument used to measure the surface temperature of objects.It incorporates high technologies of optics,infrared and electronics,and has been increasingly popularized in China.Firstly,the advantages and shortcomings of ST2L infrared thermo detector were analyzed.Then based on the requirement of detecting buried geological structures in underground coalmines and the features of ST2L,two projects had been studied to modify ST2L:1)Increasing the resolution of temperature measurements by means of improving the electrical circuit and carrying out field test;2)Realizing flame protection of ST2L and passing the state-level test and appraisement.In addition,actual application experiments had been carried out for detecting underground buried geological structures(fault,fold,crushing zone,crack,porosity,gas and spontaneous combustion areas,etc.).Some good results have been achieved and valuable conclusions have been drawn.
文摘A new 128×128 element PtSi Schottky barrier infrared image sensor with ITCCD readout structure and PtSi thin film optical cavity detector structure has been fabricated,which has 50μm×50 μm pixels,a fill factor of 40 percent,the nonuniformity of 5% or less and the dynamic range of over or equal to 50 dB.The noise equivalent temperature difference is 0.2 K with f/1.0 optics at 300 K background. In this paper,the principle of operation,design consideration and fabrication technology for the device are described.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 10732080 and 10627201)the National Basic Research Program of China (Grant No. 2006CB300404)
文摘We propose a substrate-free focal plane array （FPA） and the microcantilevers extend from a supporting frame. in this paper. The solid substrate is completely removed, Using finite element analysis, the thermal and mechanical characterizations of the substrate-free FPA are presented. Because of the large decrease in thermal conductance, the supporting frame is temperature dependent, which brings out a unique feature： the lower the thermal conductance of the supporting frame is, the higher the energy conversion efficiency in the substrate-free FPA will be. The results from the finite element analyses are consistent with our measurements： two types of substrate-free FPAs with pixel sizes of 200×200 and 60×60 um^2 are implemented in the proposed infrared detector. The noise equivalent temperature difference （NETD） values are experimentally measured to be 520 and 300 mK respectively. Further refinements are considered in various aspects, and the substrate-free FPA with a pixel size of 30×30 um^2 has a potential of achieving an NETD value of 10 mK.
基金support from CAS Youth Innovation Promotion Association Project[No.20211214].
文摘Professor Wei Lu is a leading scientist in infrared physics.He proposed the paradigm of localized manipulation over electrons and photons for infrared detection,addressing the critical challenge of dark current suppression in long-wave infrared detectors.His direct observation of the Haldane gap in quasi-one-dimensional magnetic materials was one of the earliest experimental validations of the Haldane’s conjecture-a crucial step in the theoretical discoveries of topological phases of matter that led to 2016 Nobel Prize in Physics for Duncan Haldane.Beyond fundamental research,Prof.Lu and his team developed a series of new advanced infrared detectors on multiple remote sensing satellite platforms.During his tenure as the Director of China’s State Key Laboratory of Infrared Physics and President of the Shanghai Institute of Technical Physics(SITP)at the Chinese Academy of Sciences,he led the strategic development of the institutions,contributing to China’s breakthroughs in spaceborne remote sensing technologies.
文摘Growth of GaInAsSb epilayer by liquid phase epitaxy (LPE) was reported. The LPE system with a hor-izontal sliding graphite boat was employed. The Te-doped (100) GaSb wafer was chosen as substrate. Thephysical properties of the GalnAsSb / GaSb heterostructure were investigated by double crystal X-ray rock-ing diffraction and photoluminescence. The p-GaInAsSb/ n-GaSb photodiode was made by using theseheterostructure materials .The detectivity of the photodiode D* is 4.65 ×10￣9 cm . Hz￣(1 /2) W￣(-1).
文摘Because of the frequent serious geo-hazards met in constructing sub-river tunnels,the application of geological prediction is necessary to reduce the risk.Taking the Liuyang River Tunnel(10.1 km,with 362 m of the sub-river part)which is one of the key projects of the dedicated-passenger railway from Wuhan to Guangzhou as an example,the application of integrated geological prediction technologies is expounded in detail.The effects of TSP(tunnel seismic prediction)and infrared water detectors are analyzed as key points in order to summarize the advantages and disadvantages of these devices.
文摘Ferroelectric Ba0.65Sr0.35TiO3 （BST） thin films on the Pt/Ti/SiO2/Si substrate have been successfully prepared by sol-gel. Such films have approximately 300 nm thicknesses with a remnant polarization of about 2.95 μ℃/cm^2 and a coercive field of about 21.5 kV/cm. The investigations of X-ray diffraction and atomic force microscopy show that the BST films annealed at 650 ℃ exhibit a tetragonal structure and that the films dominantly consist of large column or grains of about 89 nm in diameter. The curves of the temperature dependence of dielectric coefficient in different frequencies display the curie transition at the temperature around 23 ℃. The dielectric loss tangent of BST thin fdms at 100 kHz is less than 0.04. As a result, the BST thin films are more applicable for fabrication of infrared detector compared with the BST thin films reported previously.
基金The authors would like to acknowledge funding for the work described herein from DARPA,ARO,the Electro-Optics Center,and the University of Minnesota,particularly DARPA/ARO contract W911QX-12-C-0002We would also like to thank the authors and publishers who kindly gave permission to their figures.Finally,we would like to thank Nibir Dhar,John Carrano,Ray Balcerak,Bill Clark,Joe Pelligrino and Andrew Wood for much useful advice over the years.
文摘A review is made of the physics and technology of spectrally selective thermal detectors,especially those operating at non-cryogenic temperatures.The background radiation noise fluctuations are rederived for arbitrary spectral characteristics.Infrared absorption due to phonons and free carriers is discussed followed by a review of published works on artificial infrared absorption materials such as patterned grids,nanoparticles,plasmonic structures,metamaterials and others.Subsequently,the literature of the spectral characteristics of broadband thermal detectors and spectrally selective thermal detectors is reviewed.Finally,the authors speculate on the directions that future research and development in the area will take regarding architectures,sensitivity and spectral characteristics.
