Synaptic transistors are regarded as promising components for advancedartificial neural networks and hardware-based learning systems becausethey can emulate the fundamental biological synapse functions.Onedimensionali...Synaptic transistors are regarded as promising components for advancedartificial neural networks and hardware-based learning systems becausethey can emulate the fundamental biological synapse functions.Onedimensionalindium zinc oxide(InZnO)nanowires,owing to their excellentcharge transport and trapping properties,demonstrate tremendous potentialin synaptic transistors.However,the carrier concentration in InZnOnanowires is susceptible to oxygen vacancies,which can severely influencethe performance of the synaptic transistors.Herein,we present a facile andreliable scheme to control the synaptic transistor properties via an Arplasma-assisted oxygen vacancy defect-tunable strategy.This adjustingstrategy is based on the thermal diffusion of oxygen atoms bombarded byAr ions,which increases the oxygen vacancy concentration on the surfaceof InZnO nanowires and further regulates the carrier concentration in thedevice channel.Compared with the untreated devices,the responsivity ofthe Ar plasma-treated devices is increased by 400%,and the memory effectis also enhanced by 230%.This oxygen vacancy regulation strategyprovides a new avenue for fabricating high-performance neuromorphiccomputing systems.展开更多
基金supported by Shandong Postdoctoral Science Foundation,China(No.SDCX-ZG-202400331)funded by Qingdao Postdoctoral Project,China(No.QDBSH20240102147)the Natural Science Basic Research Program of Shaanxi(Program No.2023-JC-YB-400).
文摘Synaptic transistors are regarded as promising components for advancedartificial neural networks and hardware-based learning systems becausethey can emulate the fundamental biological synapse functions.Onedimensionalindium zinc oxide(InZnO)nanowires,owing to their excellentcharge transport and trapping properties,demonstrate tremendous potentialin synaptic transistors.However,the carrier concentration in InZnOnanowires is susceptible to oxygen vacancies,which can severely influencethe performance of the synaptic transistors.Herein,we present a facile andreliable scheme to control the synaptic transistor properties via an Arplasma-assisted oxygen vacancy defect-tunable strategy.This adjustingstrategy is based on the thermal diffusion of oxygen atoms bombarded byAr ions,which increases the oxygen vacancy concentration on the surfaceof InZnO nanowires and further regulates the carrier concentration in thedevice channel.Compared with the untreated devices,the responsivity ofthe Ar plasma-treated devices is increased by 400%,and the memory effectis also enhanced by 230%.This oxygen vacancy regulation strategyprovides a new avenue for fabricating high-performance neuromorphiccomputing systems.
