In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO_(2)via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(t_(ch)=4,5...In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO_(2)via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(t_(ch)=4,5,6 nm)exhibit excellent electrical performance and superior uniformity.The reliability properties of ITO TFTs were evaluated in detail under positive bias stress(PBS)conditions before and after passivation.Compared to the devices without passivation,the passivated devices have only 50%threshold voltage degradation(ΔV_(th))and 50%newly generated traps due to excellent isolation of the ambient atmosphere.The negligible performance degradation of ITO TFTs with passivation during negative bias stress(NBS)and negative bias temperature stress(NBTS)verifies the outstanding immunity to the water vapor of the SiO_(2)passivation layer.Overall,the ITO TFT with the t_(ch)of 6 nm and with SiO_(2)passivation exhibits the best performance in terms of electrical properties,uniformity,and reliability,which is promising in large-area production.展开更多
The increasing pursuit of ultra-high resolution displays has driven the demand for thin film transistors(TFTs)with higher mobility,especially on flexible substrates.In this work,we developed indium tin oxide(ITO)TFTs ...The increasing pursuit of ultra-high resolution displays has driven the demand for thin film transistors(TFTs)with higher mobility,especially on flexible substrates.In this work,we developed indium tin oxide(ITO)TFTs on flexible substrates for the first time and achieved a remarkable average mobility of 39.1 cm^(2)·V^(-1)·s^(-1),via mass-production compatible processes uti-lizing SiO_(2)gate dielectric.Benefiting from the ultra-flat surface and extremely low coefficient of thermal expansion(CTE)of our PI substrate,the ITO TFTs exhibit excellent large-scale uniformity.Additionally,the TFTs generate minor variations of-5.5%and+0.45 V in mobility and threshold voltage under a bending radius of 7 mm,respectively.They stay fully functional even after a dynamic bending test up to 13000 cycles,observing no obvious degradation in mobility and threshold voltage.The reliable mechanical flexibility and robust bending durability demonstrate their great potential for ultra-high resolution flexible displays in the future.展开更多
基金supported in part by the National Natural Science Foundation of China(62404110,62274033)Natural Science Foundation of Jiangsu Province(BK20221453)+1 种基金Fundamental Research Funds for the Central UniversitiesNatural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications(NY223159)。
文摘In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO_(2)via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(t_(ch)=4,5,6 nm)exhibit excellent electrical performance and superior uniformity.The reliability properties of ITO TFTs were evaluated in detail under positive bias stress(PBS)conditions before and after passivation.Compared to the devices without passivation,the passivated devices have only 50%threshold voltage degradation(ΔV_(th))and 50%newly generated traps due to excellent isolation of the ambient atmosphere.The negligible performance degradation of ITO TFTs with passivation during negative bias stress(NBS)and negative bias temperature stress(NBTS)verifies the outstanding immunity to the water vapor of the SiO_(2)passivation layer.Overall,the ITO TFT with the t_(ch)of 6 nm and with SiO_(2)passivation exhibits the best performance in terms of electrical properties,uniformity,and reliability,which is promising in large-area production.
基金supported in part by the National Natural Science Foundation of China(62274033)Natural Science Foundation of Jiangsu Province(BK20221453)Fundamental Research Funds for the Central Universities.
文摘The increasing pursuit of ultra-high resolution displays has driven the demand for thin film transistors(TFTs)with higher mobility,especially on flexible substrates.In this work,we developed indium tin oxide(ITO)TFTs on flexible substrates for the first time and achieved a remarkable average mobility of 39.1 cm^(2)·V^(-1)·s^(-1),via mass-production compatible processes uti-lizing SiO_(2)gate dielectric.Benefiting from the ultra-flat surface and extremely low coefficient of thermal expansion(CTE)of our PI substrate,the ITO TFTs exhibit excellent large-scale uniformity.Additionally,the TFTs generate minor variations of-5.5%and+0.45 V in mobility and threshold voltage under a bending radius of 7 mm,respectively.They stay fully functional even after a dynamic bending test up to 13000 cycles,observing no obvious degradation in mobility and threshold voltage.The reliable mechanical flexibility and robust bending durability demonstrate their great potential for ultra-high resolution flexible displays in the future.
