Negative differential transconductance(NDT)presents a promising platform for advancing next-generation computing technologies by reducing power consump-tion without increasing circuit complexity.The realization of mul...Negative differential transconductance(NDT)presents a promising platform for advancing next-generation computing technologies by reducing power consump-tion without increasing circuit complexity.The realization of multi-valued logic computing depends on developing innovative device concepts and circuits beyond conventional complementary metal oxide semiconductor(CMOS)technology.In this study,we demonstrate NDT behavior in an InSe/BP heterojunction at room temperature,achieving a tunable NDT with a remarkable peak-to-valley current ratio of 43.5 at V_(ds)=1.4 V.The device also exhibits distinct photovoltaic behavior and a broad spectral response spanning from 520 to 1550 nm.It delivers excellent photodetection performance,with a high photoresponsivity of 561.68 A W^(-1),detectivity of 3.95×10^(12)cmHz 1/2 W^(-1),an ultrahigh external quantum efficiency(EQE)of 1341.87%,and a fast response speed of 27μs under 532 nm illumination.Even in the near-infrared regime of 1550 nm,the device maintains a responsivity of 2.21 A W^(-1),detectivity of 1.23×10^(10)cmHz^(1/2)W^(-1),and a rise time of 477μs.Furthermore,we successfully implemented a ternary inverter,a key component for multi-valued logic computing technology,and an artificial neuron capable of emulating neural signal transmission.This study not only highlights the excep-tional electronic and optoelectronic performance of the device but also provides deeper insights into band modulation,paving the way for future advancements in low-power,high-speed logic,and neuromorphic applications.展开更多
基金National Natural Science Foundation of China,Grant/Award Numbers:T2222025,62174053,62334011,62261136552,62005303National Key Research and Development Program of China,Grant/Award Numbers:2024YFA1410700,2021YFA0715602,2021YFA1200700+4 种基金Natural Science Foundation of Chongqing,Grant/Award Number:CSTB2024NSCQ-JQX0005Shanghai Science and Technology Innovation Action Plan,Grant/Award Numbers:24QA2702300,21JC1402000,21520714100CAS Project for Young Scientists in Basic Research,Grant/Award Number:YSBR-11Programs of Shanghai Science and Technology Commission,Grant/Award Number:22501100202Fundamental Research Funds for the Central Universities。
文摘Negative differential transconductance(NDT)presents a promising platform for advancing next-generation computing technologies by reducing power consump-tion without increasing circuit complexity.The realization of multi-valued logic computing depends on developing innovative device concepts and circuits beyond conventional complementary metal oxide semiconductor(CMOS)technology.In this study,we demonstrate NDT behavior in an InSe/BP heterojunction at room temperature,achieving a tunable NDT with a remarkable peak-to-valley current ratio of 43.5 at V_(ds)=1.4 V.The device also exhibits distinct photovoltaic behavior and a broad spectral response spanning from 520 to 1550 nm.It delivers excellent photodetection performance,with a high photoresponsivity of 561.68 A W^(-1),detectivity of 3.95×10^(12)cmHz 1/2 W^(-1),an ultrahigh external quantum efficiency(EQE)of 1341.87%,and a fast response speed of 27μs under 532 nm illumination.Even in the near-infrared regime of 1550 nm,the device maintains a responsivity of 2.21 A W^(-1),detectivity of 1.23×10^(10)cmHz^(1/2)W^(-1),and a rise time of 477μs.Furthermore,we successfully implemented a ternary inverter,a key component for multi-valued logic computing technology,and an artificial neuron capable of emulating neural signal transmission.This study not only highlights the excep-tional electronic and optoelectronic performance of the device but also provides deeper insights into band modulation,paving the way for future advancements in low-power,high-speed logic,and neuromorphic applications.
