For the detached growth and crystal perfection investigation,Thallium doped Indium-antimonide(InSb:TI)ingots have been grown using vertical directional solidification(VDS)technique.Tiny melt(molecular incorporation)fr...For the detached growth and crystal perfection investigation,Thallium doped Indium-antimonide(InSb:TI)ingots have been grown using vertical directional solidification(VDS)technique.Tiny melt(molecular incorporation)freezes in conical geometry ampoule at one end at the beginning and it acts as seed.The small meniscus shape under the capillarity effect setup,then gap could be build up by the melt free surface(meniscus).It depends on the ampoule geometry and melt dissolved gases enter into the gap.It is attributed to the gap to compensate the thermal differential dilatation of the ingot that has grown with reduced diameter than the diameter of ampoule.Besides optimum conditions and parameters,freezing rate,growth velocity,cooling down time and the pressure differences across the meniscus are essential.Physical properties of InSb:T1 bulk crystals grown under the detached growths showed highest mobility.This reveals the nucleus and composition restrain by the influence of detached growth.In chemical etching,the dislocation density from first freeze front is decreases in the direction of growth.展开更多
文摘For the detached growth and crystal perfection investigation,Thallium doped Indium-antimonide(InSb:TI)ingots have been grown using vertical directional solidification(VDS)technique.Tiny melt(molecular incorporation)freezes in conical geometry ampoule at one end at the beginning and it acts as seed.The small meniscus shape under the capillarity effect setup,then gap could be build up by the melt free surface(meniscus).It depends on the ampoule geometry and melt dissolved gases enter into the gap.It is attributed to the gap to compensate the thermal differential dilatation of the ingot that has grown with reduced diameter than the diameter of ampoule.Besides optimum conditions and parameters,freezing rate,growth velocity,cooling down time and the pressure differences across the meniscus are essential.Physical properties of InSb:T1 bulk crystals grown under the detached growths showed highest mobility.This reveals the nucleus and composition restrain by the influence of detached growth.In chemical etching,the dislocation density from first freeze front is decreases in the direction of growth.
