Electrical parameters of n-type InPxAs1-x solid solution crystals have been investigated in the range of 4.2-300 K. Theoretical calculations of current carriers mobility have been carried out and they are in good agre...Electrical parameters of n-type InPxAs1-x solid solution crystals have been investigated in the range of 4.2-300 K. Theoretical calculations of current carriers mobility have been carried out and they are in good agreement with experimental results. The contribution of current carriers scattering main mechanisms has been determined. Comparison of experimental and theoretical data has shown minor contribution of disorder scattering associated with the disordered arrangement of atoms in InPxAs1-x solid solutions. Contribution of the disorder scattering increases with increasing of InP composition in solid solutions system at fixed temperatures and weakens with lowering of temperature and never dominates. A maximal share of the ＂alloy＂ scattering observed in experimental samples of lnPxAs1-x solid solutions differs from the similar scattering in SiGe alloys. It does not exceed - 20% of total scattering at 300 K and - 10% at lower temperature. A relative small contribution of disorder scattering is important for the devices designed on the base of InPxAs1-x system.展开更多
文摘Electrical parameters of n-type InPxAs1-x solid solution crystals have been investigated in the range of 4.2-300 K. Theoretical calculations of current carriers mobility have been carried out and they are in good agreement with experimental results. The contribution of current carriers scattering main mechanisms has been determined. Comparison of experimental and theoretical data has shown minor contribution of disorder scattering associated with the disordered arrangement of atoms in InPxAs1-x solid solutions. Contribution of the disorder scattering increases with increasing of InP composition in solid solutions system at fixed temperatures and weakens with lowering of temperature and never dominates. A maximal share of the ＂alloy＂ scattering observed in experimental samples of lnPxAs1-x solid solutions differs from the similar scattering in SiGe alloys. It does not exceed - 20% of total scattering at 300 K and - 10% at lower temperature. A relative small contribution of disorder scattering is important for the devices designed on the base of InPxAs1-x system.
