In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate proces...In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate process.We focus on their DC and RF responses,including the maximum transconductance(g_(m_max)),ON-resistance(R_(ON)),current-gain cutoff frequency(f_(T)),and maximum oscillation frequency(f_(max)).The devices have almost same RON.The g_(m_max) improves as the whole small recess moves toward the source.However,a small gate to source capacitance(C_(gs))and a small drain output conductance(g_(ds))lead to the largest f_(T),although the whole small gate recess moves toward the drain leads to the smaller g_(m_max).According to the small-signal modeling,the device with the whole small recess toward drain exhibits an excellent RF characteristics,such as f_(T)=372 GHz and f_(max)=394 GHz.This result is achieved by paying attention to adjust resistive and capacitive parasitics,which play a key role in high-frequency response.展开更多
InP-based high electron mobility transistors（HEMTs） will be affected by protons from different directions in space radiation applications. The proton irradiation effects on InAlAs/InGaAs hetero-junction structures o...InP-based high electron mobility transistors（HEMTs） will be affected by protons from different directions in space radiation applications. The proton irradiation effects on InAlAs/InGaAs hetero-junction structures of InP-based HEMTs are studied at incident angles ranging from 0 to 89.9° by SRIM software. With the increase of proton incident angle, the change trend of induced vacancy defects in the InAlAs/InGaAs hetero-junction region is consistent with the vacancy energy loss trend of incident protons. Namely, they both have shown an initial increase, followed by a decrease after incident angle has reached 30°. Besides, the average range and ultimate stopping positions of incident protons shift gradually from buffer layer to hetero-junction region, and then go up to gate metal. Finally, the electrical characteristics of InP-based HEMTs are investigated after proton irradiation at different incident angles by Sentaurus-TCAD. The induced vacancy defects are considered self-consistently through solving Poisson＇s and current continuity equations. Consequently, the extrinsic transconductance, pinch-off voltage and channel current demonstrate the most serious degradation at the incident angle of 30？, which can be accounted for the most severe carrier sheet density reduction under this condition.展开更多
The T-gate stem height of In Al As/In Ga As In P-based high electron mobility transistor(HEMT) is increased from165 nm to 250 nm. The influences of increasing the gate stem height on the direct current(DC) and radio f...The T-gate stem height of In Al As/In Ga As In P-based high electron mobility transistor(HEMT) is increased from165 nm to 250 nm. The influences of increasing the gate stem height on the direct current(DC) and radio frequency(RF)performances of device are investigated. A 120-nm-long gate, 250-nm-high gate stem device exhibits a higher threshold voltage(Vth) of 60 m V than a 120-nm-long gate devices with a short gate stem, caused by more Pt distributions on the gate foot edges of the high Ti/Pt/Au gate. The Pt distribution in Schottky contact metal is found to increase with the gate stem height or the gate length increasing, and thus enhancing the Schottky barrier height and expanding the gate length,which can be due to the increased internal tensile stress of Pt. The more Pt distributions for the high gate stem device also lead to more obvious Pt sinking, which reduces the distance between the gate and the In Ga As channel so that the transconductance(gm) of the high gate stem device is 70 m S/mm larger than that of the short stem device. As for the RF performances,the gate extrinsic parasitic capacitance decreases and the intrinsic transconductance increases after the gate stem height has been increased, so the RF performances of device are obviously improved. The high gate stem device yields a maximum ft of 270 GHz and fmax of 460 GHz, while the short gate stem device has a maximum ft of 240 GHz and the fmax of 370 GHz.展开更多
A double-recessed offset gate process technology for In P-based high electron mobility transistors(HEMTs)has been developed in this paper.Single-recessed and double-recessed HEMTs with different gate offsets have been...A double-recessed offset gate process technology for In P-based high electron mobility transistors(HEMTs)has been developed in this paper.Single-recessed and double-recessed HEMTs with different gate offsets have been fabricated and characterized.Compared with single-recessed devices,the maximum drain-source current(I_(D,max))and maximum extrinsic transconductance(g_(m,max))of double-recessed devices decreased due to the increase in series resistances.However,in terms of RF performance,double-recessed HEMTs achieved higher maximum oscillation frequency(f_(MAX))by reducing drain output conductance(g_(m,max))and drain to gate capacitance(C_gd).In addition,further improvement of fMAXwas observed by adjusting the gate offset of double-recessed devices.This can be explained by suppressing the ratio of C_(gd)to source to gate capacitance(C_gd)by extending drain-side recess length(Lrd).Compared with the single-recessed HEMTs,the f;of double-recessed offset gate HEMTs was increased by about 20%.展开更多
A set of 100-nm gate-length In P-based high electron mobility transistors(HEMTs)were designed and fabricated with different gate offsets in gate recess.A novel technology was proposed for independent definition of gat...A set of 100-nm gate-length In P-based high electron mobility transistors(HEMTs)were designed and fabricated with different gate offsets in gate recess.A novel technology was proposed for independent definition of gate recess and T-shaped gate by electron beam lithography.DC and RF measurement was conducted.With the gate offset varying from drain side to source side,the maximum drain current(I_(ds,max))and transconductance(g_(m,max))increased.In the meantime,fTdecreased while f;increased,and the highest fmax of 1096 GHz was obtained.It can be explained by the increase of gate-source capacitance and the decrease of gate-drain capacitance and source resistance.Output conductance was also suppressed by gate offset toward source side.This provides simple and flexible device parameter selection for HEMTs of different usages.展开更多
A two-step gate-recess process combining high selective wet-etching and non-selective digital wet-etching techniques has been proposed for InAlAs/InGaAs InP-based high electron mobility transistors （HEMTs）. High etc...A two-step gate-recess process combining high selective wet-etching and non-selective digital wet-etching techniques has been proposed for InAlAs/InGaAs InP-based high electron mobility transistors （HEMTs）. High etching-selectivity ratio of InGaAs to InA1As material larger than 100 is achieved by using mixture solution of succinic acid and hydrogen peroxide （H202）. Selective wet-etching is validated in the gate-recess process of InA1As/InGaAs InP-based HEMTs, which proceeds and auto- matically stops at the InA1As barrier layer. The non-selective digital wet-etching process is developed using a separately controlled oxidation/de-oxidation technique, and during each digital etching cycle 1.2 nm InAIAs material is removed. The two-step gate-recess etching technique has been successfully incorporated into device fabrication. Digital wet-etching is repeated for two cycles with about 3 nm InAIAs barrier layer being etched off. InP-based HEMTs have demonstrated superior extrinsic trans- conductance and RF characteristics to devices fabricated during only the selective gate-recess etching process because of the smaller gate to channel distance.展开更多
An anti-radiation structure of In P-based high electron mobility transistor(HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotio...An anti-radiation structure of In P-based high electron mobility transistor(HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of In P-based HEMTs. Moreover, direct current(DC) and radio frequency(RF) characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5× 10^(11) cm^(-2),1× 10^(12) cm^(-2), and 5× 10^(12) cm^(-2). DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5× 10^(12) cm^(-2). Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.展开更多
Gallium nitride(GaN)-based devices have significant potential for space applications.However,the mechanisms of radiation damage to the device,particularly from strong ionizing radiation,remains unknown.This study inve...Gallium nitride(GaN)-based devices have significant potential for space applications.However,the mechanisms of radiation damage to the device,particularly from strong ionizing radiation,remains unknown.This study investigates the effects of radiation on p-gate AlGaN/GaN high-electron-mobility transistors(HEMTs).Under a high voltage,the HEMT leakage current increased sharply and was accompanied by a rapid increase in power density that caused"thermal burnout"of the devices.In addition,a burnout signature appeared on the surface of the burned devices,proving that a single-event burnout effect occurred.Additionally,degradation,including an increase in the on-resistance and a decrease in the breakdown voltage,was observed in devices irradiated with high-energy heavy ions and without bias.The latent tracks induced by heavy ions penetrated the heterojunction interface and extended into the GaN layer.Moreover,a new type of N_(2)bubble defect was discovered inside the tracks using Fresnel analysis.The accumulation of N_(2)bubbles in the heterojunction and buffer layers is more likely to cause leakage and failure.This study indicates that electrical stress accelerates the failure rate and that improving heat dissipation is an effective reinforcement method for GaN-based devices.展开更多
The introduction of strain In_(x)Ga_(1-x)As channel with high In content increases the confinement of the two-dimensional electron gas(2DEG)and further improves the high-frequency performance of InGaAs/InAlAs/InP HEMT...The introduction of strain In_(x)Ga_(1-x)As channel with high In content increases the confinement of the two-dimensional electron gas(2DEG)and further improves the high-frequency performance of InGaAs/InAlAs/InP HEMTs.The effect of In_(x)Ga_(1-x)As channel with different In contents on electron irradiation tolerance of InP-based HEMT structures in terms of 2DEG mobility and density has been investigated.The experiment results show that,after the same high electron irradiation dose,the 2DEG mobility and density in InP-based HEMT structures with strain In_(x)Ga_(1-x)As(x>0.53)channel decrease more dramatically than that without strain In_(0.53)Ga_(0.47)As channel.Moreover,the degradation of 2DEG mobility and density becomes more severe as the increase of In content and strain in the In_(x)Ga_(1-x)As channel.The research results can provide some suggestions for the design of radiation-resistant InP-based HEMTs.展开更多
比较了空气桥跨细栅和空气桥跨栅总线两种源连接结构的1 mm AlGaN/GaN HEMTs器件的特性,对两种结构的管芯进行了等效电路参数提取。测试了两种布局方式下的不同源场板结构器件的射频以及功率性能,比较分析表明,空气桥跨细栅的源连接方...比较了空气桥跨细栅和空气桥跨栅总线两种源连接结构的1 mm AlGaN/GaN HEMTs器件的特性,对两种结构的管芯进行了等效电路参数提取。测试了两种布局方式下的不同源场板结构器件的射频以及功率性能,比较分析表明,空气桥跨细栅的源连接方式由于有效地降低了栅漏电容以及栅源电容,比空气桥跨栅总线源连接的器件能取得更好的频率特性以及功率特性。展开更多
The growth, fabrication, and characterization of 0. 2μm gate-length AlGaN/GaN HEMTs, with a high mobility GaN thin layer as a channel,grown on （0001） sapphire substrates by MOCVD,are described. The unintentionally ...The growth, fabrication, and characterization of 0. 2μm gate-length AlGaN/GaN HEMTs, with a high mobility GaN thin layer as a channel,grown on （0001） sapphire substrates by MOCVD,are described. The unintentionally doped 2.5μm thick GaN epilayers grown with the same conditions as the GaN channel have a room temperature electron mobility of 741cmz^2（V· s） at an electron concentration of 1.52 × 10^16 cm^-3. The resistivity of the thick GaN buffer layer is greater than 10^8Ω· cm at room temperature. The 50mm HEMT wafers grown on sapphire substrates show an average sheet resistance of 440.9Ω□ with uniformity better than 96%. Devices of 0.2μm× 40μm gate periphery exhibit a maximum extrinsic transconductance of 250mS/mm and a current gain cutoff frequency of 77GHz. The AlGaN/GaN HEMTs with 0.8mm gate width display a total output power of 1.78W （2.23W/mm） and a linear gain of 13.3dB at 8GHz. The power devices also show a saturated current density as high as 1.07A/mm at a gate bias of 0.5V.展开更多
A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and...A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at VDS = 40V, IDS = 0.9A, a maximum CW output power of 41.4dBm with a maximum power added efficiency （PAE） of 32.54% and a power combine efficiency of 69% was achieved at 5.4GHz.展开更多
MOCVD-grown 0.25μm gate-length AlGaN/GaN high electron mobility transistors （HEMTs） are fabricated on sapphire substrates. A peak extrinsic transconductance of 250mS/mm and a unity current gain cutoff frequency （f...MOCVD-grown 0.25μm gate-length AlGaN/GaN high electron mobility transistors （HEMTs） are fabricated on sapphire substrates. A peak extrinsic transconductance of 250mS/mm and a unity current gain cutoff frequency （fT） of 77GHz are obtained for a 0.25μm gate-length single finger device. These power devices exhibit a maximum drain current density as high as 1.07A/mm. On-chip testing yielded a continuous-wave output power of 27. 04dBm at 8GHz with an associated power-added efficiency of 26. 5% for an 80 × 10μm device.展开更多
基金Supported by the Terahertz Multi User RF Transceiver System Development Project(Z211100004421012).
文摘In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate process.We focus on their DC and RF responses,including the maximum transconductance(g_(m_max)),ON-resistance(R_(ON)),current-gain cutoff frequency(f_(T)),and maximum oscillation frequency(f_(max)).The devices have almost same RON.The g_(m_max) improves as the whole small recess moves toward the source.However,a small gate to source capacitance(C_(gs))and a small drain output conductance(g_(ds))lead to the largest f_(T),although the whole small gate recess moves toward the drain leads to the smaller g_(m_max).According to the small-signal modeling,the device with the whole small recess toward drain exhibits an excellent RF characteristics,such as f_(T)=372 GHz and f_(max)=394 GHz.This result is achieved by paying attention to adjust resistive and capacitive parasitics,which play a key role in high-frequency response.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11775191,61404115,61434006,and 11475256)the Program for Innovative Research Team(in Science and Technology)in University of Henan Province,China(Grant No.18IRTSTHN016)the Development Fund for Outstanding Young Teachers in Zhengzhou University of China(Grant No.1521317004)
文摘InP-based high electron mobility transistors（HEMTs） will be affected by protons from different directions in space radiation applications. The proton irradiation effects on InAlAs/InGaAs hetero-junction structures of InP-based HEMTs are studied at incident angles ranging from 0 to 89.9° by SRIM software. With the increase of proton incident angle, the change trend of induced vacancy defects in the InAlAs/InGaAs hetero-junction region is consistent with the vacancy energy loss trend of incident protons. Namely, they both have shown an initial increase, followed by a decrease after incident angle has reached 30°. Besides, the average range and ultimate stopping positions of incident protons shift gradually from buffer layer to hetero-junction region, and then go up to gate metal. Finally, the electrical characteristics of InP-based HEMTs are investigated after proton irradiation at different incident angles by Sentaurus-TCAD. The induced vacancy defects are considered self-consistently through solving Poisson＇s and current continuity equations. Consequently, the extrinsic transconductance, pinch-off voltage and channel current demonstrate the most serious degradation at the incident angle of 30？, which can be accounted for the most severe carrier sheet density reduction under this condition.
基金Project supported by the National Natural Science Foundation of China(Grant No.61434006)。
文摘The T-gate stem height of In Al As/In Ga As In P-based high electron mobility transistor(HEMT) is increased from165 nm to 250 nm. The influences of increasing the gate stem height on the direct current(DC) and radio frequency(RF)performances of device are investigated. A 120-nm-long gate, 250-nm-high gate stem device exhibits a higher threshold voltage(Vth) of 60 m V than a 120-nm-long gate devices with a short gate stem, caused by more Pt distributions on the gate foot edges of the high Ti/Pt/Au gate. The Pt distribution in Schottky contact metal is found to increase with the gate stem height or the gate length increasing, and thus enhancing the Schottky barrier height and expanding the gate length,which can be due to the increased internal tensile stress of Pt. The more Pt distributions for the high gate stem device also lead to more obvious Pt sinking, which reduces the distance between the gate and the In Ga As channel so that the transconductance(gm) of the high gate stem device is 70 m S/mm larger than that of the short stem device. As for the RF performances,the gate extrinsic parasitic capacitance decreases and the intrinsic transconductance increases after the gate stem height has been increased, so the RF performances of device are obviously improved. The high gate stem device yields a maximum ft of 270 GHz and fmax of 460 GHz, while the short gate stem device has a maximum ft of 240 GHz and the fmax of 370 GHz.
基金supported by the National Natural Science Foundation of China(Grant Nos.61874036,62174041,and61434006)the Open Project of State Key Laboratory of ASIC and System(Grant No.KVH1233021)+3 种基金the Opening Foundation of the State Key Laboratory of Advanced Materials and Electronic Components(Grant No.FHR-JS-201909007)the Guangxi Innovation Research Team Project(Grant Nos.2018GXNSFGA281004 and 2018GXNSFBA281152)the Guangxi Innovation Driven Development Special Fund Project(Grant No.AA19254015)the Guangxi Key Laboratory of Precision Navigation Technology and Application Project(Grant Nos.DH201906,DH202020,and DH202001)。
文摘A double-recessed offset gate process technology for In P-based high electron mobility transistors(HEMTs)has been developed in this paper.Single-recessed and double-recessed HEMTs with different gate offsets have been fabricated and characterized.Compared with single-recessed devices,the maximum drain-source current(I_(D,max))and maximum extrinsic transconductance(g_(m,max))of double-recessed devices decreased due to the increase in series resistances.However,in terms of RF performance,double-recessed HEMTs achieved higher maximum oscillation frequency(f_(MAX))by reducing drain output conductance(g_(m,max))and drain to gate capacitance(C_gd).In addition,further improvement of fMAXwas observed by adjusting the gate offset of double-recessed devices.This can be explained by suppressing the ratio of C_(gd)to source to gate capacitance(C_gd)by extending drain-side recess length(Lrd).Compared with the single-recessed HEMTs,the f;of double-recessed offset gate HEMTs was increased by about 20%.
基金Project supported by the National Nature Science Foundation of China(Grant No.61434006)。
文摘A set of 100-nm gate-length In P-based high electron mobility transistors(HEMTs)were designed and fabricated with different gate offsets in gate recess.A novel technology was proposed for independent definition of gate recess and T-shaped gate by electron beam lithography.DC and RF measurement was conducted.With the gate offset varying from drain side to source side,the maximum drain current(I_(ds,max))and transconductance(g_(m,max))increased.In the meantime,fTdecreased while f;increased,and the highest fmax of 1096 GHz was obtained.It can be explained by the increase of gate-source capacitance and the decrease of gate-drain capacitance and source resistance.Output conductance was also suppressed by gate offset toward source side.This provides simple and flexible device parameter selection for HEMTs of different usages.
基金Project supported by the National Natural Science Foundation of China （Nos. 61404115 and 61434006）, the Program for Innovative Research Team （in Science and Technology） in University of Henan Province, China （No. 18IRTSTHN016）, and the Development Fund for Outstanding Young Teachers in Zhengzhou University, China （No. 1521317004）
文摘A two-step gate-recess process combining high selective wet-etching and non-selective digital wet-etching techniques has been proposed for InAlAs/InGaAs InP-based high electron mobility transistors （HEMTs）. High etching-selectivity ratio of InGaAs to InA1As material larger than 100 is achieved by using mixture solution of succinic acid and hydrogen peroxide （H202）. Selective wet-etching is validated in the gate-recess process of InA1As/InGaAs InP-based HEMTs, which proceeds and auto- matically stops at the InA1As barrier layer. The non-selective digital wet-etching process is developed using a separately controlled oxidation/de-oxidation technique, and during each digital etching cycle 1.2 nm InAIAs material is removed. The two-step gate-recess etching technique has been successfully incorporated into device fabrication. Digital wet-etching is repeated for two cycles with about 3 nm InAIAs barrier layer being etched off. InP-based HEMTs have demonstrated superior extrinsic trans- conductance and RF characteristics to devices fabricated during only the selective gate-recess etching process because of the smaller gate to channel distance.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11775191,61404115,61434006,and 11475256)the Promotion Funding for Excellent Young Backbone Teacher of Henan Province,China(Grant No.2019GGJS017)。
文摘An anti-radiation structure of In P-based high electron mobility transistor(HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of In P-based HEMTs. Moreover, direct current(DC) and radio frequency(RF) characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5× 10^(11) cm^(-2),1× 10^(12) cm^(-2), and 5× 10^(12) cm^(-2). DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5× 10^(12) cm^(-2). Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.
基金supported by the National Natural Science Foundation of China(Nos.12035019,62234013,12205350,12075290,12175287)the China National Postdoctoral Program for Innovative Talents(BX20200340)+1 种基金the fund of Innovation Center of Radiation Application(No.KFZC2022020601)the Chinese Academy of Sciences(CAS)“Light of West China"Program hosted by Jian Zeng.
文摘Gallium nitride(GaN)-based devices have significant potential for space applications.However,the mechanisms of radiation damage to the device,particularly from strong ionizing radiation,remains unknown.This study investigates the effects of radiation on p-gate AlGaN/GaN high-electron-mobility transistors(HEMTs).Under a high voltage,the HEMT leakage current increased sharply and was accompanied by a rapid increase in power density that caused"thermal burnout"of the devices.In addition,a burnout signature appeared on the surface of the burned devices,proving that a single-event burnout effect occurred.Additionally,degradation,including an increase in the on-resistance and a decrease in the breakdown voltage,was observed in devices irradiated with high-energy heavy ions and without bias.The latent tracks induced by heavy ions penetrated the heterojunction interface and extended into the GaN layer.Moreover,a new type of N_(2)bubble defect was discovered inside the tracks using Fresnel analysis.The accumulation of N_(2)bubbles in the heterojunction and buffer layers is more likely to cause leakage and failure.This study indicates that electrical stress accelerates the failure rate and that improving heat dissipation is an effective reinforcement method for GaN-based devices.
基金National Natural Science Foundation of China(11705277)Science and Technology Research Project of Hubei Provincial Department of Education(Q20222607)Graduate Quality Engineering Support Project of Hubei University of Arts and Science(YZ3202405)。
文摘The introduction of strain In_(x)Ga_(1-x)As channel with high In content increases the confinement of the two-dimensional electron gas(2DEG)and further improves the high-frequency performance of InGaAs/InAlAs/InP HEMTs.The effect of In_(x)Ga_(1-x)As channel with different In contents on electron irradiation tolerance of InP-based HEMT structures in terms of 2DEG mobility and density has been investigated.The experiment results show that,after the same high electron irradiation dose,the 2DEG mobility and density in InP-based HEMT structures with strain In_(x)Ga_(1-x)As(x>0.53)channel decrease more dramatically than that without strain In_(0.53)Ga_(0.47)As channel.Moreover,the degradation of 2DEG mobility and density becomes more severe as the increase of In content and strain in the In_(x)Ga_(1-x)As channel.The research results can provide some suggestions for the design of radiation-resistant InP-based HEMTs.
文摘比较了空气桥跨细栅和空气桥跨栅总线两种源连接结构的1 mm AlGaN/GaN HEMTs器件的特性,对两种结构的管芯进行了等效电路参数提取。测试了两种布局方式下的不同源场板结构器件的射频以及功率性能,比较分析表明,空气桥跨细栅的源连接方式由于有效地降低了栅漏电容以及栅源电容,比空气桥跨栅总线源连接的器件能取得更好的频率特性以及功率特性。
文摘The growth, fabrication, and characterization of 0. 2μm gate-length AlGaN/GaN HEMTs, with a high mobility GaN thin layer as a channel,grown on （0001） sapphire substrates by MOCVD,are described. The unintentionally doped 2.5μm thick GaN epilayers grown with the same conditions as the GaN channel have a room temperature electron mobility of 741cmz^2（V· s） at an electron concentration of 1.52 × 10^16 cm^-3. The resistivity of the thick GaN buffer layer is greater than 10^8Ω· cm at room temperature. The 50mm HEMT wafers grown on sapphire substrates show an average sheet resistance of 440.9Ω□ with uniformity better than 96%. Devices of 0.2μm× 40μm gate periphery exhibit a maximum extrinsic transconductance of 250mS/mm and a current gain cutoff frequency of 77GHz. The AlGaN/GaN HEMTs with 0.8mm gate width display a total output power of 1.78W （2.23W/mm） and a linear gain of 13.3dB at 8GHz. The power devices also show a saturated current density as high as 1.07A/mm at a gate bias of 0.5V.
文摘A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at VDS = 40V, IDS = 0.9A, a maximum CW output power of 41.4dBm with a maximum power added efficiency （PAE） of 32.54% and a power combine efficiency of 69% was achieved at 5.4GHz.
文摘MOCVD-grown 0.25μm gate-length AlGaN/GaN high electron mobility transistors （HEMTs） are fabricated on sapphire substrates. A peak extrinsic transconductance of 250mS/mm and a unity current gain cutoff frequency （fT） of 77GHz are obtained for a 0.25μm gate-length single finger device. These power devices exhibit a maximum drain current density as high as 1.07A/mm. On-chip testing yielded a continuous-wave output power of 27. 04dBm at 8GHz with an associated power-added efficiency of 26. 5% for an 80 × 10μm device.
