An anti-radiation structure of In P-based high electron mobility transistor(HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotio...An anti-radiation structure of In P-based high electron mobility transistor(HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of In P-based HEMTs. Moreover, direct current(DC) and radio frequency(RF) characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5× 10^(11) cm^(-2),1× 10^(12) cm^(-2), and 5× 10^(12) cm^(-2). DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5× 10^(12) cm^(-2). Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.展开更多
光电化学水分解电池能够将太阳能直接转化为氢能,是一种理想的太阳能利用方式.p-n叠层电池具有理论转换效率高、成本低廉、材料选择灵活等优势,被认为是最具潜力的一类光电化学水分解电池.然而,目前这类叠层电池的太阳能转化效率还不高...光电化学水分解电池能够将太阳能直接转化为氢能,是一种理想的太阳能利用方式.p-n叠层电池具有理论转换效率高、成本低廉、材料选择灵活等优势,被认为是最具潜力的一类光电化学水分解电池.然而,目前这类叠层电池的太阳能转化效率还不高,主要原因是单个电极的效率太低.本文介绍了几种提高光电极分解水性能的方法—减小光生载流子的体相复合、表面复合以及抑制背反应等,同时综述了国内外关于几种p型半导体光阴极的研究进展,如Si、In P、Cu In1-xGaxS(Se)2、Cu2Zn Sn S4等.通过总结,作者提出一种p-Cu2Zn Sn S4(Cu In1-xGaxS(Se)2)/n-Ta3N5(Fe2O3)组装方式,有望获得高效低成本叠层光电化学水分解电池.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11775191,61404115,61434006,and 11475256)the Promotion Funding for Excellent Young Backbone Teacher of Henan Province,China(Grant No.2019GGJS017)。
文摘An anti-radiation structure of In P-based high electron mobility transistor(HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of In P-based HEMTs. Moreover, direct current(DC) and radio frequency(RF) characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5× 10^(11) cm^(-2),1× 10^(12) cm^(-2), and 5× 10^(12) cm^(-2). DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5× 10^(12) cm^(-2). Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.
文摘光电化学水分解电池能够将太阳能直接转化为氢能,是一种理想的太阳能利用方式.p-n叠层电池具有理论转换效率高、成本低廉、材料选择灵活等优势,被认为是最具潜力的一类光电化学水分解电池.然而,目前这类叠层电池的太阳能转化效率还不高,主要原因是单个电极的效率太低.本文介绍了几种提高光电极分解水性能的方法—减小光生载流子的体相复合、表面复合以及抑制背反应等,同时综述了国内外关于几种p型半导体光阴极的研究进展,如Si、In P、Cu In1-xGaxS(Se)2、Cu2Zn Sn S4等.通过总结,作者提出一种p-Cu2Zn Sn S4(Cu In1-xGaxS(Se)2)/n-Ta3N5(Fe2O3)组装方式,有望获得高效低成本叠层光电化学水分解电池.
