In P/In0.53Ga0.47As短波红外探测器是一种高性能的近室温工作器件,从200 K到室温下都能获得较好的器件性能,从而大大降低了对制冷的要求。为了充分利用目标在可见光和短波波段的光谱信息,通过特殊的材料结构设计和器件背减工艺,成功实...In P/In0.53Ga0.47As短波红外探测器是一种高性能的近室温工作器件,从200 K到室温下都能获得较好的器件性能,从而大大降低了对制冷的要求。为了充分利用目标在可见光和短波波段的光谱信息,通过特殊的材料结构设计和器件背减工艺,成功实现了320×256In P/In Ga As宽光谱红外探测器,能够同时对可见光和短波红外响应,并从77 K到263 K工作温度下实现了对人脸、计算机及室外2.3 km处的景物成像。测试样管平均峰值探测率为2×1012 cm Hz1/2/W,光谱响应为0.6~1.7μm,光谱响应测试和成像结果同时验证了In P/In Ga As宽光谱探测器对可见光信号的探测。相比标准的In P/In0.53Ga0.47As短波探测器,In P/In Ga As宽光谱探测器显示了可见/短波双波段探测的效果,大大丰富了探测目标的信息量,可显著提升对目标的识别率。展开更多
采用分层吸收渐变电荷倍增(SAGCM)结构,通过两次扩散、多层介质淀积、AuZn p 型欧姆接触、AuGeNi n 型欧姆接触等工艺,设计制造了正面入射平面 InP/InGaAs 雪崩光电二极管,器件利用 InGaAs做吸收层,InP 做增益层,光敏面直径50μm;测试...采用分层吸收渐变电荷倍增(SAGCM)结构,通过两次扩散、多层介质淀积、AuZn p 型欧姆接触、AuGeNi n 型欧姆接触等工艺,设计制造了正面入射平面 InP/InGaAs 雪崩光电二极管,器件利用 InGaAs做吸收层,InP 做增益层,光敏面直径50μm;测试结果表明器件有正常的光响应特性,击穿电压32～42 V,在低于击穿电压2 V 左右可以得到大约10 A/W 的光响应度,在0到小于击穿电压1 V 的偏压范围内,暗电流只有1 nA 左右;器件在2.7 GHz 以下有平坦的增益。展开更多
PolYimide passivation and planarization process techniques for high speed InP/InGaAs single heterojunction bipolar transistors （SHBTS） are developed. A maximum extrapolated ft of 210GHz is achieved for the SHBT with...PolYimide passivation and planarization process techniques for high speed InP/InGaAs single heterojunction bipolar transistors （SHBTS） are developed. A maximum extrapolated ft of 210GHz is achieved for the SHBT with 1.4μm × 15μm emitter area at VCE = 1. 1V and Ic = 33.5mA. This device is suitable for high speed and low power applications,such as ultra high speed mixed signal circuits and optoelectronic communication ICs.展开更多
An InP-based single-heterojunction bipolar transistor （SHBT） with base μ-bndge and emitter air-bridge is reported. Because those bridges reduce parasitic capacitance greatly, the cutoff frequency fT of the 2μm ...An InP-based single-heterojunction bipolar transistor （SHBT） with base μ-bndge and emitter air-bridge is reported. Because those bridges reduce parasitic capacitance greatly, the cutoff frequency fT of the 2μm ×12.5μm InP SHBT without de-embedding reaches 178GHz. It is critical in high-speed low power applications,such as OEIC receivers and analog-to-digital converters.展开更多
文摘In P/In0.53Ga0.47As短波红外探测器是一种高性能的近室温工作器件,从200 K到室温下都能获得较好的器件性能,从而大大降低了对制冷的要求。为了充分利用目标在可见光和短波波段的光谱信息,通过特殊的材料结构设计和器件背减工艺,成功实现了320×256In P/In Ga As宽光谱红外探测器,能够同时对可见光和短波红外响应,并从77 K到263 K工作温度下实现了对人脸、计算机及室外2.3 km处的景物成像。测试样管平均峰值探测率为2×1012 cm Hz1/2/W,光谱响应为0.6~1.7μm,光谱响应测试和成像结果同时验证了In P/In Ga As宽光谱探测器对可见光信号的探测。相比标准的In P/In0.53Ga0.47As短波探测器,In P/In Ga As宽光谱探测器显示了可见/短波双波段探测的效果,大大丰富了探测目标的信息量,可显著提升对目标的识别率。
文摘采用分层吸收渐变电荷倍增(SAGCM)结构,通过两次扩散、多层介质淀积、AuZn p 型欧姆接触、AuGeNi n 型欧姆接触等工艺,设计制造了正面入射平面 InP/InGaAs 雪崩光电二极管,器件利用 InGaAs做吸收层,InP 做增益层,光敏面直径50μm;测试结果表明器件有正常的光响应特性,击穿电压32～42 V,在低于击穿电压2 V 左右可以得到大约10 A/W 的光响应度,在0到小于击穿电压1 V 的偏压范围内,暗电流只有1 nA 左右;器件在2.7 GHz 以下有平坦的增益。
文摘PolYimide passivation and planarization process techniques for high speed InP/InGaAs single heterojunction bipolar transistors （SHBTS） are developed. A maximum extrapolated ft of 210GHz is achieved for the SHBT with 1.4μm × 15μm emitter area at VCE = 1. 1V and Ic = 33.5mA. This device is suitable for high speed and low power applications,such as ultra high speed mixed signal circuits and optoelectronic communication ICs.
文摘An InP-based single-heterojunction bipolar transistor （SHBT） with base μ-bndge and emitter air-bridge is reported. Because those bridges reduce parasitic capacitance greatly, the cutoff frequency fT of the 2μm ×12.5μm InP SHBT without de-embedding reaches 178GHz. It is critical in high-speed low power applications,such as OEIC receivers and analog-to-digital converters.
