Graphene quantum dots(GQDs)doped InGaO(IGO)thin film transistors(TFTs)have been fabricated based on solution-driven ZrO_(x) as gate dielectrics.Compare to pure IGO TFTs,superior electrical performance of the GQDs-IGO ...Graphene quantum dots(GQDs)doped InGaO(IGO)thin film transistors(TFTs)have been fabricated based on solution-driven ZrO_(x) as gate dielectrics.Compare to pure IGO TFTs,superior electrical performance of the GQDs-IGO TFTs can be achieved by adjusting the doping concentration.It has been demonstrated that GQDs-modified IGO TFTs devices with GQDs doping content of0.3 mg·ml^(-1)have the optimized performances,including field-effect mobility(μ_(FE))of 22.02 cm^(2)·V^(-1)·s^(-1),on/off current ratio(I_(on)/I_(off))of 7.06×10^(7),subthreshold swing(SS)of 0.09 V·dec^(-1),hysteresis of 0.04 V and interfacial trap states(D_(it))of 1.03×10^(12)cm^(-2).In addition,bias stress and illumination stress tests have been performed and excellent stability has been achieved for optimized GQDs-IGO-TFTs.The GQDs-IGO TFTs device showed smaller threshold voltage shift of 0.12 and 0.04 V under positive bias stress(PBS)test and negative bias stress(NBS)test for 3600 s,respectively.And it showed smaller threshold voltage shift of 0.27 and 0.34 V for red light under the PBS and NBS test for 3600 s,respectively.Meanwhile,it showed smaller threshold voltage shift of0.20 and 0.22 V for green light under PBS and NBS test for3600 s,respectively.It also showed smaller threshold voltage shift of 0.17 and 0.12 V for blue under the positive bias illumination stress(PBIS)test and negative bias illumination stress(NBIS)test for 3600 s,respectively.Lowfrequency noise(LFN)characteristics of GQDs-IGO/ZrO_(x)TFTs indicated that the noise source came from the fluctuations in mobility.Finally,a low voltage resistor-loaded unipolar inverter has been built based on GQDs-IGO/ZrO_(x)TFT,demonstrating good dynamic response behavior and a maximum gain of 7.4.These experimental results have suggested that solution-processed GQDs-IGO/ZrO_(x)TFT may envision potential applications in low-cost and large-area electronics.展开更多
In addition to the plasmon-mediated resonant coupling mechanism,the excitation of hot electron induced by plasmon presents a promising path for developing high-performance optoelectronic devices tailored for various a...In addition to the plasmon-mediated resonant coupling mechanism,the excitation of hot electron induced by plasmon presents a promising path for developing high-performance optoelectronic devices tailored for various applications.This study introduces a sophisticated design for a solar-blind ultraviolet(UV)detector array using linear In-doped Ga_(2)O_(3) (InGaO)modulated by platinum(Pt)nanoparticles(PtNPs).The construction of this array involves depositing a thin film of Ga_(2)O_(3) through the plasmonenhanced chemical vapor deposition(PECVD)technique.Subsequently,PtNPs were synthesized via radio-frequency magnetron sputtering and annealing process.The performance of these highly uniform arrays is significantly enhanced owing to the generation of high-energy hot electrons.This process is facilitated by non-radiative decay processes induced by PtNPs.Notably,the array achieves maximum responsivity(R)of 353 mA/W,external quantum efficiency(EQE)of 173%,detectivity(D*)of approximately 10~(13)Jones,and photoconductive gain of 1.58.In addition,the standard deviation for photocurrent stays below17%for more than 80%of the array units within the array.Subsequently,the application of this array extends to photon detection in the deep-UV(DUV)range.This includes critical areas such as imaging sensing and water quality monitoring.By leveraging surface plasmon coupling,the array achieves high-performance DUV photon detection.This approach enables a broad spectrum of practical applications,underscoring the significant potential of this technology for the advancement of DUV detectors.展开更多
基金financially supported by the National Natural Science Foundation of China(No.11774001)Anhui Project(No.Z010118169)Open Fund Project of Zhejiang Engineering Research Center of MEMS in Shaoxing University(No.MEMSZJERC2202)。
文摘Graphene quantum dots(GQDs)doped InGaO(IGO)thin film transistors(TFTs)have been fabricated based on solution-driven ZrO_(x) as gate dielectrics.Compare to pure IGO TFTs,superior electrical performance of the GQDs-IGO TFTs can be achieved by adjusting the doping concentration.It has been demonstrated that GQDs-modified IGO TFTs devices with GQDs doping content of0.3 mg·ml^(-1)have the optimized performances,including field-effect mobility(μ_(FE))of 22.02 cm^(2)·V^(-1)·s^(-1),on/off current ratio(I_(on)/I_(off))of 7.06×10^(7),subthreshold swing(SS)of 0.09 V·dec^(-1),hysteresis of 0.04 V and interfacial trap states(D_(it))of 1.03×10^(12)cm^(-2).In addition,bias stress and illumination stress tests have been performed and excellent stability has been achieved for optimized GQDs-IGO-TFTs.The GQDs-IGO TFTs device showed smaller threshold voltage shift of 0.12 and 0.04 V under positive bias stress(PBS)test and negative bias stress(NBS)test for 3600 s,respectively.And it showed smaller threshold voltage shift of 0.27 and 0.34 V for red light under the PBS and NBS test for 3600 s,respectively.Meanwhile,it showed smaller threshold voltage shift of0.20 and 0.22 V for green light under PBS and NBS test for3600 s,respectively.It also showed smaller threshold voltage shift of 0.17 and 0.12 V for blue under the positive bias illumination stress(PBIS)test and negative bias illumination stress(NBIS)test for 3600 s,respectively.Lowfrequency noise(LFN)characteristics of GQDs-IGO/ZrO_(x)TFTs indicated that the noise source came from the fluctuations in mobility.Finally,a low voltage resistor-loaded unipolar inverter has been built based on GQDs-IGO/ZrO_(x)TFT,demonstrating good dynamic response behavior and a maximum gain of 7.4.These experimental results have suggested that solution-processed GQDs-IGO/ZrO_(x)TFT may envision potential applications in low-cost and large-area electronics.
基金supported by the National Key Research and Development Program of China(Grant No.2022YFB3605404)the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.62204125)+2 种基金the Joint Funds of the National Natural Science Foundation of China(Grant No.U23A20349)the Natural Science Research Start-up Foundation of Recuring Talents of Nanjing University of Posts and Telecommunications(Grant Nos.XK1060921115 and XK1060921002)Postgraduate Research&Practice Innovation Program of Jiangsu Province(Grant No.SJCX23_0300)。
文摘In addition to the plasmon-mediated resonant coupling mechanism,the excitation of hot electron induced by plasmon presents a promising path for developing high-performance optoelectronic devices tailored for various applications.This study introduces a sophisticated design for a solar-blind ultraviolet(UV)detector array using linear In-doped Ga_(2)O_(3) (InGaO)modulated by platinum(Pt)nanoparticles(PtNPs).The construction of this array involves depositing a thin film of Ga_(2)O_(3) through the plasmonenhanced chemical vapor deposition(PECVD)technique.Subsequently,PtNPs were synthesized via radio-frequency magnetron sputtering and annealing process.The performance of these highly uniform arrays is significantly enhanced owing to the generation of high-energy hot electrons.This process is facilitated by non-radiative decay processes induced by PtNPs.Notably,the array achieves maximum responsivity(R)of 353 mA/W,external quantum efficiency(EQE)of 173%,detectivity(D*)of approximately 10~(13)Jones,and photoconductive gain of 1.58.In addition,the standard deviation for photocurrent stays below17%for more than 80%of the array units within the array.Subsequently,the application of this array extends to photon detection in the deep-UV(DUV)range.This includes critical areas such as imaging sensing and water quality monitoring.By leveraging surface plasmon coupling,the array achieves high-performance DUV photon detection.This approach enables a broad spectrum of practical applications,underscoring the significant potential of this technology for the advancement of DUV detectors.
