The upper waveguide （UWG） has direct influences on the optical and electrical characteristics of the violet laser diode （LD） by changing the optical field distribution or barrier of the electron blocking layer （...The upper waveguide （UWG） has direct influences on the optical and electrical characteristics of the violet laser diode （LD） by changing the optical field distribution or barrier of the electron blocking layer （EBL）. In this study, a series of InGaN-based violet LDs with different UWGs are investigated systematically with LASTIP software. It is found that the output light power （OLP） under an injecting current of 120 mA or the threshold current （Ith） is deteriorated when the UWG is u-In0.02Ga0.98N/GaN or u-In0.02Ga0.98N/AlxGa1-xN （0 ≤ x ≤ 0.1）, which should be attributed to small optical confinement factor （OCF） or severe electron leakage. Therefore, a new violet LD structure with u-In0.02Ga0.98N/GaN/Al0.05Ga0.95N multiple layer UWG is proposed to reduce the optical loss and increase the barrier of EBL. Finally, the output light power under an injecting current of 120 mA is improved to 176.4 mW.展开更多
Recently,many groups have focused on the development of GaN-based green LDs to meet the demand for laser display.Great progresses have been achieved in the past few years even that many challenges exist.In this articl...Recently,many groups have focused on the development of GaN-based green LDs to meet the demand for laser display.Great progresses have been achieved in the past few years even that many challenges exist.In this article,we analysis the challenges to develop GaN-based green LDs,and then the approaches to improve the green LD structure in the aspect of crystalline quality,electrical properties,and epitaxial layer structure are reviewed,especially the work we have done.展开更多
基金Project supported by the National Key R&D Program of China(Grant Nos.2016YFB0400803 and 2016YFB0401801)the National Natural Science Foundation of China(Grant Nos.61674138,61674139,61604145,61574135,61574134,61474142,61474110,61377020,and 61376089)+1 种基金the Science Challenge Project,China(Grant No.TZ2016003)the Beijing Municipal Science and Technology Project,China(Grant No.Z161100002116037)
文摘The upper waveguide （UWG） has direct influences on the optical and electrical characteristics of the violet laser diode （LD） by changing the optical field distribution or barrier of the electron blocking layer （EBL）. In this study, a series of InGaN-based violet LDs with different UWGs are investigated systematically with LASTIP software. It is found that the output light power （OLP） under an injecting current of 120 mA or the threshold current （Ith） is deteriorated when the UWG is u-In0.02Ga0.98N/GaN or u-In0.02Ga0.98N/AlxGa1-xN （0 ≤ x ≤ 0.1）, which should be attributed to small optical confinement factor （OCF） or severe electron leakage. Therefore, a new violet LD structure with u-In0.02Ga0.98N/GaN/Al0.05Ga0.95N multiple layer UWG is proposed to reduce the optical loss and increase the barrier of EBL. Finally, the output light power under an injecting current of 120 mA is improved to 176.4 mW.
基金Project supported by the National Key Research and Development Progress of China(Nos.2016YFB0401803,2016YFB0402002)the National Natural Science Foundation of China(Nos.61574160,61334005)+1 种基金the Strategic Priority Research Program of the Chinese Academy of Science(No.XDA09020401)the Science and Technology Support Project of Jiangsu Province(No.BE2013007)
文摘Recently,many groups have focused on the development of GaN-based green LDs to meet the demand for laser display.Great progresses have been achieved in the past few years even that many challenges exist.In this article,we analysis the challenges to develop GaN-based green LDs,and then the approaches to improve the green LD structure in the aspect of crystalline quality,electrical properties,and epitaxial layer structure are reviewed,especially the work we have done.
