为了研制满足光纤通讯需求的高性能半导体激光器,对压应变In Ga As Sb/Ga As Sb量子阱激光器有源区进行了研究。根据应变量子阱能带理论、固体模型理论和克龙尼克-潘纳模型,确定了激射波长与量子阱材料组分及阱宽的关系。基于Lastip软...为了研制满足光纤通讯需求的高性能半导体激光器,对压应变In Ga As Sb/Ga As Sb量子阱激光器有源区进行了研究。根据应变量子阱能带理论、固体模型理论和克龙尼克-潘纳模型,确定了激射波长与量子阱材料组分及阱宽的关系。基于Lastip软件建立了条宽为50μm、腔长为800μm的半导体激光器仿真模型,模拟器件的输出特性,讨论了量子阱个数对器件光电特性的影响。结果表明:当量子阱组分为In0.44Ga0.56As0.92Sb0.08/Ga As0.92Sb0.08、阱宽为9 nm、量子阱个数为2时,器件的性能达到最佳,阈值电流为48 m A,斜率效率为0.76 W/A。展开更多
报道了激射波长为2.1μm的Ga In Sb/Al Ga As Sb双量子阱激光器。通过优化外延结构设计和欧姆接触,无镀膜的宽条激光器达到了9.8%的峰值功率转换效率,这比原来的值提高了1.5倍,室温下得到了615 m W的连续激射功率输出和1.5 W的脉冲激射...报道了激射波长为2.1μm的Ga In Sb/Al Ga As Sb双量子阱激光器。通过优化外延结构设计和欧姆接触,无镀膜的宽条激光器达到了9.8%的峰值功率转换效率,这比原来的值提高了1.5倍,室温下得到了615 m W的连续激射功率输出和1.5 W的脉冲激射功率输出。这些激光器的阈值电流密度低至126 A/cm2,斜率效率高达0.3 W/A。通过测试不同腔长的激光器,测得内损耗和内量子效率分别为6 cm-1和75.5%,均比原有器件有很大提升。激光器在连续工作3 000 h后,功率没有明显下降。展开更多
In this paper,we demonstrate bias-selectable dual-band short-or mid-wavelength infrared photodetectors based on In0.24Ga0.76As0.21Sb0.79 bulk materials and InAs/GaSb type-II superlattices with cutoff wavelengths of 2....In this paper,we demonstrate bias-selectable dual-band short-or mid-wavelength infrared photodetectors based on In0.24Ga0.76As0.21Sb0.79 bulk materials and InAs/GaSb type-II superlattices with cutoff wavelengths of 2.2μm and 3.6μm,respectively.At 200 K,the short-wave channel exhibits a peak quantum efficiency of 42%and a dark current density of5.93×10^-5）/cm^2at 500 mV,thereby providing a detectivity of 1.55×10^11cm·Hz^1/2/W.The mid-wave channel exhibits a peak quantum efficiency of 31%and a dark current density of 1.22×10^-3A/cm^2at-300 mV,thereby resulting in a detectivity of 2.71×10^10cm·Hz^1/2/W.Moreover,we discuss the band alignment and spectral cross-talk of the dual-band n-i-p-p-i-n structure.展开更多
文摘为了研制满足光纤通讯需求的高性能半导体激光器,对压应变In Ga As Sb/Ga As Sb量子阱激光器有源区进行了研究。根据应变量子阱能带理论、固体模型理论和克龙尼克-潘纳模型,确定了激射波长与量子阱材料组分及阱宽的关系。基于Lastip软件建立了条宽为50μm、腔长为800μm的半导体激光器仿真模型,模拟器件的输出特性,讨论了量子阱个数对器件光电特性的影响。结果表明:当量子阱组分为In0.44Ga0.56As0.92Sb0.08/Ga As0.92Sb0.08、阱宽为9 nm、量子阱个数为2时,器件的性能达到最佳,阈值电流为48 m A,斜率效率为0.76 W/A。
文摘报道了激射波长为2.1μm的Ga In Sb/Al Ga As Sb双量子阱激光器。通过优化外延结构设计和欧姆接触,无镀膜的宽条激光器达到了9.8%的峰值功率转换效率,这比原来的值提高了1.5倍,室温下得到了615 m W的连续激射功率输出和1.5 W的脉冲激射功率输出。这些激光器的阈值电流密度低至126 A/cm2,斜率效率高达0.3 W/A。通过测试不同腔长的激光器,测得内损耗和内量子效率分别为6 cm-1和75.5%,均比原有器件有很大提升。激光器在连续工作3 000 h后,功率没有明显下降。
基金Project supported by the National Basic Research Program of China(Grant Nos.2016YFB0402403 and 2013CB932904)the National Natural Science Foundation of China(Grant Nos.61290303 and 61306013)China Postdoctoral Science Foundation(Grant No.2016M601100)
文摘In this paper,we demonstrate bias-selectable dual-band short-or mid-wavelength infrared photodetectors based on In0.24Ga0.76As0.21Sb0.79 bulk materials and InAs/GaSb type-II superlattices with cutoff wavelengths of 2.2μm and 3.6μm,respectively.At 200 K,the short-wave channel exhibits a peak quantum efficiency of 42%and a dark current density of5.93×10^-5）/cm^2at 500 mV,thereby providing a detectivity of 1.55×10^11cm·Hz^1/2/W.The mid-wave channel exhibits a peak quantum efficiency of 31%and a dark current density of 1.22×10^-3A/cm^2at-300 mV,thereby resulting in a detectivity of 2.71×10^10cm·Hz^1/2/W.Moreover,we discuss the band alignment and spectral cross-talk of the dual-band n-i-p-p-i-n structure.
