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InGaAs/Si雪崩光电二极管 被引量:5
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作者 宋海兰 黄辉 +2 位作者 崔海林 黄永清 任晓敏 《半导体光电》 CAS CSCD 北大核心 2010年第5期702-704,708,共4页
采用Si/InP低温晶片键合技术,设计并制作了InGaAs/Si雪崩光电二极管。器件利用InGaAs做吸收层,Si做增益层,光敏面大小50μm×70μm;测试结果表明器件有正常的光响应特性,击穿电压为41V,暗电流为99nA,此时光电流比暗电流高3个数量级。
关键词 雪崩光电二极管 ingaas/si 键合
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晶圆键合GaAs/InGaAs双结太阳电池 被引量:1
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作者 蒋卓宇 李娟 +2 位作者 孔祥力 代盼 孙强健 《半导体技术》 北大核心 2025年第4期365-371,共7页
为了避免直接外延生长引起晶格失配问题,利用晶圆键合技术开发了GaAs/InGaAs双结太阳电池。采用金属固态源分子束外延(MBE)生长方法,在GaAs衬底上生长GaAs顶电池,在InP衬底上生长InGaAs底电池。通过晶圆键合技术将这些子电池键合在一起... 为了避免直接外延生长引起晶格失配问题,利用晶圆键合技术开发了GaAs/InGaAs双结太阳电池。采用金属固态源分子束外延(MBE)生长方法,在GaAs衬底上生长GaAs顶电池,在InP衬底上生长InGaAs底电池。通过晶圆键合技术将这些子电池键合在一起,制备了晶圆键合GaAs/InGaAs双结太阳电池。测试结果显示,通过晶圆键合技术制备的双结太阳电池具有较低的电损耗,在聚光下获得了超过31.7%的光电转换效率。双结太阳电池的晶圆键合技术改善了常规直接材料生长方法因晶格失配造成的位错问题,可以更灵活地实现双结太阳电池的优化设计。 展开更多
关键词 分子束外延(MBE) ingaas GAAS 晶圆键合 双结太阳电池
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引入Si掺杂层调控InGaAs/GaAs表面量子点的光学特性
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作者 刘晓辉 刘景涛 +5 位作者 郭颖楠 王颖 郭庆林 梁宝来 王淑芳 傅广生 《人工晶体学报》 CAS 北大核心 2023年第1期73-82,共10页
在InGaAs/GaAs表面量子点(SQDs)的GaAs势垒层中引入Si掺杂层,以研究Si掺杂对InGaAs/GaAs SQDs光学特性的影响。荧光发光谱(PL)测量结果显示,InGaAs/GaAs SQDs的发光强烈依赖于Si掺杂浓度。随着掺杂浓度的增加,SQDs的PL峰值位置先红移后... 在InGaAs/GaAs表面量子点(SQDs)的GaAs势垒层中引入Si掺杂层,以研究Si掺杂对InGaAs/GaAs SQDs光学特性的影响。荧光发光谱(PL)测量结果显示,InGaAs/GaAs SQDs的发光强烈依赖于Si掺杂浓度。随着掺杂浓度的增加,SQDs的PL峰值位置先红移后蓝移;PL峰值能量与激光激发强度的立方根依赖关系由线性向非线性转变;通过组态交互作用方法发现SQDs的PL峰位蓝移减弱;时间分辨荧光光谱显示了从非线性衰减到线性衰减的转变。以上结果说明Si掺杂能够填充InGaAs SQDs的表面态,并且改变表面费米能级钉扎效应和SQDs的荧光辐射特性。本研究为深入理解与InGaAs SQDs的表面敏感特性关联的物理机制和载流子动力学过程,以及扩大InGaAs/GaAs SQDs传感器的应用提供了实验依据。 展开更多
关键词 ingaas量子点 si掺杂 表面费米能级 荧光发光谱 间接跃迁辐射 时间分辨荧光光谱
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不同Ge组分a-Si_(1-x)Ge_(x)键合层对InGaAs/Si雪崩光电二极管性能的影响 被引量:2
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作者 周锦荣 鲍诗仪 +2 位作者 佘实现 黄志伟 柯少颖 《光子学报》 EI CAS CSCD 北大核心 2022年第9期118-127,共10页
采用非晶半导体中间层键合(SIB)实现键合界面失配晶格的阻断是实现高质量Si基InGaAs薄膜制备的最佳选择。本文在InGaAs/Si键合界面插入一层非晶锗硅(a-Si_(1-x)Ge_(x))键合层,模拟了不同Ge组分对InGaAs/Si APD复合率、能带、隧穿、电荷... 采用非晶半导体中间层键合(SIB)实现键合界面失配晶格的阻断是实现高质量Si基InGaAs薄膜制备的最佳选择。本文在InGaAs/Si键合界面插入一层非晶锗硅(a-Si_(1-x)Ge_(x))键合层,模拟了不同Ge组分对InGaAs/Si APD复合率、能带、隧穿、电荷堆积等参数的影响。器件在室温下获得极低的暗电流(~10^(-10) A@95%雪崩电压),增益和增益带宽积分别高达30 GHz和60 GHz。本文将为低噪声近红外APD的研制提供理论指导。 展开更多
关键词 ingaas/si雪崩光电二极管 a-siGe键合层 暗电流 增益带宽积
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InGaAs/Si键合界面a-Si键合层厚度对InGaAs/Si雪崩光电二极管性能的影响 被引量:1
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作者 佘实现 张烨 +2 位作者 黄志伟 周锦荣 柯少颖 《光子学报》 EI CAS CSCD 北大核心 2022年第2期170-179,共10页
为从根本上阻断InGaAs/Si之间的失配晶格,获得低噪声的InGaAs/Si雪崩光电二极管,理论上在InGaAs/Si键合界面插入超薄a-Si键合层,彻底隔断键合界面异质晶格,同时保证InGaAs吸收层和Si倍增层超高的晶体质量和良好的电学传输。模拟了a-Si... 为从根本上阻断InGaAs/Si之间的失配晶格,获得低噪声的InGaAs/Si雪崩光电二极管,理论上在InGaAs/Si键合界面插入超薄a-Si键合层,彻底隔断键合界面异质晶格,同时保证InGaAs吸收层和Si倍增层超高的晶体质量和良好的电学传输。模拟了a-Si键合层厚度对InGaAs/Si雪崩光电二极管性能影响。由于a-Si的载流子阻挡作用,器件在室温下获得了超低暗电流,且在偏压大于击穿电压后,光暗电流出现电流间隙,这将为超低噪声InGaAs/Si雪崩光电二极管的研制指明方向。 展开更多
关键词 ingaas/si键合 雪崩光电二极管 a-si键合层 晶格失配 异质键合
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TiO_(2)对反应烧结SiC陶瓷性能的影响
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作者 胡苗 鞠茂奇 +3 位作者 陈定 顾华志 黄奥 付绿平 《武汉科技大学学报》 北大核心 2026年第1期31-36,共6页
以SiC粉、炭黑和造孔剂为主要原料,外加不同含量的TiO_(2)粉末,经混料、压制成型、110℃干燥后,通过1740℃真空渗硅烧结1 h制得反应烧结SiC陶瓷,研究了TiO_(2)添加量对反应烧结SiC陶瓷的力学性能和显微结构的影响。结果表明,TiO_(2)的... 以SiC粉、炭黑和造孔剂为主要原料,外加不同含量的TiO_(2)粉末,经混料、压制成型、110℃干燥后,通过1740℃真空渗硅烧结1 h制得反应烧结SiC陶瓷,研究了TiO_(2)添加量对反应烧结SiC陶瓷的力学性能和显微结构的影响。结果表明,TiO_(2)的最佳添加量为9%,此时所制反应烧结SiC陶瓷的抗弯强度和断裂韧性分别达到294 MPa、4.84 MPa·m^(1/2)。这是因为TiO_(2)和游离Si反应生成了力学性能优异的Ti_(3)SiC_(2)增韧相,同时TiO_(2)能有效降低游离Si的含量并细化其尺寸,从而提高了陶瓷材料的力学性能。 展开更多
关键词 反应烧结siC陶瓷 TI3siC2 游离si 力学性能 显微结构
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Effect of the Fourth Element on Bonding of Silicon Nitride Ceramics with Y_2O_3-Al_2O_3-SiO_2 Glass Solders 被引量:1
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作者 周飞 《Journal of Rare Earths》 SCIE EI CAS CSCD 2001年第2期90-96,共7页
Bonding of Si 3N 4 ceramic was performed with Y 2O 3 Al 2O 3 SiO 2(YAS) X glass solders,which were mixed with TiO 2 (YT) and Si 3N 4 (YN), respectively. The effects of bonding conditions and interfacial r... Bonding of Si 3N 4 ceramic was performed with Y 2O 3 Al 2O 3 SiO 2(YAS) X glass solders,which were mixed with TiO 2 (YT) and Si 3N 4 (YN), respectively. The effects of bonding conditions and interfacial reaction on the joint strength were studied. The joint strength in different bonding conditions was measured by four point bending tests. The interfacial microstructures were observed and analyzed by SEM, EPMA and XRD. It is shown that with the increase of bonding temperature and holding time, the joint strength increases reaching a peak, and then decreases. When TiO 2 is put into YAS solder,the bonding interface with Si 3N 4/(Y Sialon glass+TiN)/TiN/Y Sialon glass is formed. When YAS solder is mixed with Si 3N 4 powder, the interfacial residual thermal stress may be decreased, and then the joint strength is enhanced. According to microanalyses, the bonding strength is related to interfacial reaction. 展开更多
关键词 rare earths si 3N 4 ceramic YTTRIA titanium oxide oxynitride glass bonding
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Solid-State Diffusion Bonding of NbSS/Nb5Si3 Composite Using Ni/Al and Ti/Al Nanolayers 被引量:2
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作者 Xin-Yu Ren Hai-Shui Ren +5 位作者 Yong-Wang Kang Hua-Ping Xiong Chong Pei Bo Chen Yao-Yong Cheng A.I.Ustinov 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2019年第9期1142-1150,共9页
Diffusion bonding of refractory Nb–Si-based alloy was performed with Ni/Al and Ti/Al nanolayers under the condition of 1473 K/30 MPa/60 min.The NbSS/Nb5Si3 in situ composite with the nominal composition of Nb–22 Ti... Diffusion bonding of refractory Nb–Si-based alloy was performed with Ni/Al and Ti/Al nanolayers under the condition of 1473 K/30 MPa/60 min.The NbSS/Nb5Si3 in situ composite with the nominal composition of Nb–22 Ti–16 Si–3 Cr–3 Al–2 Hf was used as the parent material.The joint microstructures were examined by using a scanning electron microscope equipped with an X-ray energy dispersive spectrometer.Shear test was conducted for the bonded joints at room temperature.Within the joint bonded with Ni/Al multilayer,element diffusion occurred between the base metal and the nanolayer,with the reaction products of AlNb2+Ni3 Al,NiAl and AlNi2 Ti phases.The average shear strength was 182 MPa.While using Ti/Al multilayer,the interface mainly consisted of TiAl,(Ti,Nb)Al and(Ti,Nb)2 Al phases,and the corresponding joints exhibited an increased strength of 228 MPa.In this case,the fracture mainly took place in the TiAl phase and presented a typical brittle characteristic. 展开更多
关键词 Nbss/Nb5si3 COMPOsiTE Diffusion bonding NANOLAYER Shear strength
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Energy Density Dependence of Bonding Characteristics of Selective Laser-Melted Nb–Si-Based Alloy on Titanium Substrate 被引量:2
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作者 Yue-Ling Guo Li-Na Jia +2 位作者 Bin Kong Yong-Lin Huang Hu Zhang 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2018年第5期477-486,共10页
Spherical Nb–20Si–24Ti–2Cr–2Al pre-alloyed powders were processed by selective laser melting(SLM) on Ti6Al4V substrates with different energy densities. A series of single tracks and single layers were produced ... Spherical Nb–20Si–24Ti–2Cr–2Al pre-alloyed powders were processed by selective laser melting(SLM) on Ti6Al4V substrates with different energy densities. A series of single tracks and single layers were produced using different processing parameters, including powder size, laser power, scanning speed and hatch distance. Results showed that the pre-alloyed powders ranging from 45 to 75 lm were more applicable to SLM with less balling tendency, in comparison with those between 75 and 180 lm. The increase in linear energy density(LED) resulted in the decrease in contact angle and the increase in the width of single track as well as its penetration depth into the substrate. Smaller hatch distance leaded to a larger remelted part of the former track and a higher volumetric laser energy density. With a thickness of 75.6 lm, an interfacial intermediate layer, enriched in Ti and depleted in Nb, Si, Cr and Al, was formed between the SLM part and the Ti6Al4V substrate. The mechanisms of the elimination of balling phenomenon by employing a higher LED and the interfacial bonding characteristics between Nb–Si-based alloys via SLM and the Ti6Al4V substrate were discussed. 展开更多
关键词 Nb-si alloys Selective laser melting Additive manufacture bonding character Microstructure
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Bonding performance of diamond grit to a Co-Si alloy 被引量:1
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作者 孙凤莲 冯吉才 +2 位作者 张杰 于彦东 孙平忠 《China Welding》 EI CAS 1998年第2期35-39,共5页
The bonding performance between synthetic diamond grit and adhesive ( Co-Si alloy) in polycrystalline diamond compact ( PDC) has been investigated. The results indicate that the carbide-forming element Si diffuses tow... The bonding performance between synthetic diamond grit and adhesive ( Co-Si alloy) in polycrystalline diamond compact ( PDC) has been investigated. The results indicate that the carbide-forming element Si diffuses towards the diamond grit and the quantity of Si element in the inter layer of diamond grit-adhesives is about two times higher than that in the other area. New compound SiC exists in the inter layer of diamond-adhesives. The formation of SiC enhances the strength and prolongs the service life of PDC. The sintering time is important to the formation of SiC. 展开更多
关键词 DIAMOND Co-si alloy bonding
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Study of New Way about Si/Si Bonding
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作者 刘玉岭 王新 +3 位作者 张文智 徐晓辉 张德臣 张志花 《Rare Metals》 SCIE EI CAS CSCD 2000年第4期290-296,共7页
A new set of technique was adopted in bonding Si-Si by using Ge (Ⅳ element),which is used as the substitute for the common hydrophilic method. The bond layer has no holes, and the edge bond-rate amounts to above 98%,... A new set of technique was adopted in bonding Si-Si by using Ge (Ⅳ element),which is used as the substitute for the common hydrophilic method. The bond layer has no holes, and the edge bond-rate amounts to above 98%, and the bond strength is above 2156 Pa. By doping the same kind of dopant with low-resistance in Ge, the stress compensation was realized. 展开更多
关键词 si Ge bonding mechanism
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Bonding of Silicon Nitride Ceramic Composite with RE_2O_3Al_2O_3SiO_2 Glass Solders
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作者 周飞 李志章 罗启富 《Journal of Rare Earths》 SCIE EI CAS CSCD 1999年第3期194-199,共6页
Liquid bonding of Si 3N 4 ceramic composite was carried out with RE 2O 3 Al 2O 3 SiO 2 glass solders. The effect of bonding conditions and interfacial reaction on the joint strength was studied. The joint st... Liquid bonding of Si 3N 4 ceramic composite was carried out with RE 2O 3 Al 2O 3 SiO 2 glass solders. The effect of bonding conditions and interfacial reaction on the joint strength was studied. The joint strength under different bonding conditions was measured by four point bending tests. The interfacial microstructures were observed and analyzed by SEM, EPMA and XRD. It is shown that the liquid glass solders react with Si 3N 4 at interface, forming the Si 3N 4/Si 2N 2O/Y(La) sialon glass/Y(La) sialon glass gradient interface. With the increase of bonding temperature and holding time, the joint strength first increased reaching a peak, and then decreased. According to microanalyses, LaYO 3 precipitated from joint glass improves joint strength at room and high temperature. 展开更多
关键词 Rare earths si 3N 4 ceramic composite LANTHANA YTTRIA bonding
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Solid-liquid state pressure bonding of Si_3N_4 ceramics with aluminum based alloys and its mechanism
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作者 邹贵生 吴爱萍 任家烈 《中国有色金属学会会刊:英文版》 CSCD 2001年第2期177-182,共5页
Solid liquid state pressure bonding of Si 3N 4 ceramics with aluminum based alloys, which contain a small amount of intermetallic compounds Al 3Ti or Al 3Zr, was investigated. With this new method, the heat resistant ... Solid liquid state pressure bonding of Si 3N 4 ceramics with aluminum based alloys, which contain a small amount of intermetallic compounds Al 3Ti or Al 3Zr, was investigated. With this new method, the heat resistant properties of the bonding zone metal are improved, and the joints’ strengths at high temperature is increased. The joints’ shear strength at room temperature and at 600 ℃ reach 126~133 MPa and 32~34 MPa, respectively, with suitable bonding pressure. The reaction between aluminum and Si 3N 4 ceramics, which produces Al Si N O type compounds is the dominant interfacial reaction, while the reactions between the second active element Ti or Zr in the aluminum based alloys and Si 3N 4 ceramics also occur to some extend. [ 展开更多
关键词 solid liquid state pressure bonding si 3N 4 ceramics intermetallic compounds high temperature properties
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键合法制备硅基1.55μmInP-InGaAsP量子阱激光器 被引量:1
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作者 于丽娟 赵洪泉 +1 位作者 杜云 黄永箴 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第4期741-743,共3页
在硅基上成功地制备出了1.55μmInPInGaAsP量子阱激光器.设计并生长了适合于键合的量子阱激光器结构材料,通过直接键合技术,将Si衬底与InPInGaAsP外延片键合到一起.剥离去掉InP衬底后,在5~6μm的薄膜上制备出20μm条形边发射激光器.室... 在硅基上成功地制备出了1.55μmInPInGaAsP量子阱激光器.设计并生长了适合于键合的量子阱激光器结构材料,通过直接键合技术,将Si衬底与InPInGaAsP外延片键合到一起.剥离去掉InP衬底后,在5~6μm的薄膜上制备出20μm条形边发射激光器.室温下,阈值电流160mA(电流密度为2.7kA/cm2),功率可达10mW以上(在约350mA电流下),实现了1.55μm长波长边发射激光器与Si的集成.目前,该结果国际上还未见报道. 展开更多
关键词 直接键合 长波长激光器 硅基 量子阱激光器
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硅基键合InP-InGaAsP量子阱连续激光器的研制 被引量:1
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作者 于丽娟 赵洪泉 +2 位作者 杜云 李敬 黄永箴 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第7期1117-1120,共4页
采用键合技术在Si基上制备了InP-InGaAsP量子阱激光器,实现了电注入室温连续工作.采用低温直接键合的方法,将Si衬底和InP-InGaAsP外延片键合在一起,并制成条宽6μm的脊波导边发射激光器.室温连续工作的1.55μm激光器阈值电流为48mA,对... 采用键合技术在Si基上制备了InP-InGaAsP量子阱激光器,实现了电注入室温连续工作.采用低温直接键合的方法,将Si衬底和InP-InGaAsP外延片键合在一起,并制成条宽6μm的脊波导边发射激光器.室温连续工作的1.55μm激光器阈值电流为48mA,对应的阈值电流密度和微分电阻分别为2.13kA/cm2和5.8Ω,在约220mA时输出光功率达15mW. 展开更多
关键词 硅基激光器 连续激射 直接键合
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Reconstruction of broken Si–O–Si bonds in iron ore tailings (IOTs) in concrete 被引量:12
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作者 Juan-hong Liu Yu-cheng Zhou +1 位作者 Ai-xiang Wu Hong-jiang Wang 《International Journal of Minerals,Metallurgy and Materials》 SCIE EI CAS CSCD 2019年第10期1329-1336,共8页
This paper reports a study on the reconstruction of broken Si O Si bonds in iron ore tailings (IOTs) in concrete. Limestone and IOTs were used to investigate the influence of different types of coarse aggregates on th... This paper reports a study on the reconstruction of broken Si O Si bonds in iron ore tailings (IOTs) in concrete. Limestone and IOTs were used to investigate the influence of different types of coarse aggregates on the compressive strengths of concrete samples. The dif- ferences in interfacial transition zones (ITZs) between aggregate and paste were analyzed by scanning electron microscopy (SEM) and ener- gy-dispersive spectroscopy (EDS). Meanwhile, X-ray diffraction (XRD) and infrared spectroscopy (IR) were used to study microscopic changes in limestone and IOTs powders in a simple alkaline environment that simulated cement. The results show that the compressive strengths of IOTs concrete or paste are higher than those of limestone concrete or paste under identical conditions. The Ca/Si atom ratios in the ITZs of IOTs con- crete samples are lower than those of limestone concrete;the diffraction peak of the calcium silicate phase at 2θ = 29.5°, as well as the bands of Si O bonds shifting to lower wavenumbers, indicates reconstruction of the broken Si-O-Si bonds on the surfaces of IOTs with Ca(OH)2. 展开更多
关键词 iron ore TAILINGS broken si O si bondS ALKALINE environment RECONSTRUCTION
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SYNTHESIS AND CHARACTERISTIC OF POLYSILANES CONTAINING Si-H BOND 被引量:1
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作者 Ying Kui LI Zhao Hui CHEN 《Chinese Chemical Letters》 SCIE CAS CSCD 1992年第10期799-800,共2页
Three kinds of polysilanes containing Si-H bond, ■CH_3SiCH_3■_x■CH_3SiH■_y■_n and■PhSiPh■_π■CH_3SiH■_y■CH_3SiCH_3■, have been synthesized. The structures of these copolymers were investigated by IR, ~1H-NM... Three kinds of polysilanes containing Si-H bond, ■CH_3SiCH_3■_x■CH_3SiH■_y■_n and■PhSiPh■_π■CH_3SiH■_y■CH_3SiCH_3■, have been synthesized. The structures of these copolymers were investigated by IR, ~1H-NMR and ^(13)C-NMR and their molecular weights were measured. 展开更多
关键词 Figure SYNTHEsiS AND CHARACTERISTIC OF POLYsiLANES CONTAINING si-H bond si
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β-双烯酮亚胺Ga^((Ⅲ))和Ge^((Ⅳ))配合物活化Si-H键的理论研究
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作者 李彩琴 赵建国 +3 位作者 曹秀丽 李唯一 刘荔贞 李小花 《四川大学学报(自然科学版)》 北大核心 2025年第3期689-695,共7页
本文采用密度泛函理论(DFT)计算,研究了β-双烯酮亚胺(BDI)Ga(Ⅲ)和Ge(Ⅳ)配合物活化Si-H键的反应机理和活性差异.计算结果表明,在[(BDI)tBuGa]和[(BDI)Ge]配合物存在下,Si-H键的活化均通过中心金属与配体之间的Lewis酸-Lewis碱协同反... 本文采用密度泛函理论(DFT)计算,研究了β-双烯酮亚胺(BDI)Ga(Ⅲ)和Ge(Ⅳ)配合物活化Si-H键的反应机理和活性差异.计算结果表明,在[(BDI)tBuGa]和[(BDI)Ge]配合物存在下,Si-H键的活化均通过中心金属与配体之间的Lewis酸-Lewis碱协同反应机制完成.[(BDI)Ge]配合物活化Si-H键的能量最低反应路径包含了的1,5-协同加成步骤和分子内的SiH3+正离子转移步骤.其中,1,5-协同加成步骤需要的反应能垒较高(ΔG1^(≠)=27.3 kcal·mol^(-1)),为速率控制步骤.分子内SiH3+正离子转移过渡态的相对Gibbs自由能(36.7 kcal·mol^(-1))更高,是整个反应路径的能量最高点.与[(BDI)tBuGa]配合物相比,[(BDI)Ge]配合物活化Si-H键时反应所需要的反应能垒更高,表明[(BDI)Ge]配合物活化Si-H键的反应性较低.基于能量分解分析和扩展过渡态-化学价的自然轨道分析的结果,[(BDI)Ge]配合物活化Si-H键较低的反应性可归因于[(BDI)Ge]和SiH4分子片段之间较高的Pauli互斥能. 展开更多
关键词 β-双烯酮亚胺 受阻路易斯酸碱对 si-H键活化
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The Preparation of Unsymmetrical Diaminodimethylsilanes and the Cleavage of Silicon-Nitrogen Bonds by Acid Chloride
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作者 Guo Bin RONG Ru Jian MA +3 位作者 Chong Ying ZHOU Zhu Liang JIN Wan Nian WU Qing WANG (Department of Chemistry, East China University of Science and Technology, Shanghai, 200237) 《Chinese Chemical Letters》 SCIE CAS CSCD 1997年第11期945-946,共2页
Seven unsymmetrical diaminodimethylsilanes were prepared. The reactions of these silylamine with benzoyl chloride indicated that in comparison with electronic, the steric effect played more important role on the react... Seven unsymmetrical diaminodimethylsilanes were prepared. The reactions of these silylamine with benzoyl chloride indicated that in comparison with electronic, the steric effect played more important role on the reactivity of Si-N bond. As a new method, unsymmetrical diamide can produced by the reaction of the title compounds with diacid chloride. 展开更多
关键词 si The Preparation of Unsymmetrical Diaminodimethylsilanes and the Cleavage of silicon-Nitrogen bonds by Acid Chloride
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EFEECT OF METALLIC CATIONS ON Si-O BONDS IN SILICATES
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作者 Yin, Zhoulan Gao, XiaohuiCentral-South University of Technology, Changsha 410083, China 《中国有色金属学会会刊:英文版》 CSCD 1993年第3期1-6,共6页
The effect of metallic cations on the Si-O(br) bond and the Si-O(ter) bond was studied with CNDO/2 MO calculations. The characteristics of them were discussed, which were found to vary with the bonding and coordi nati... The effect of metallic cations on the Si-O(br) bond and the Si-O(ter) bond was studied with CNDO/2 MO calculations. The characteristics of them were discussed, which were found to vary with the bonding and coordi nation situation of oxygen as well as the effect of metallic cations on oxygen. The conclusions obtained may be well used in the fields of mineralogy, geochemistry, silicate materials, pyrometallurgy and so on. 展开更多
关键词 siLICATES si-O bondS METALLIC CATIONS QUANTUM chemistry
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