InAsN nanowires on InAs stems were obtained using plasma-assisted molecular beam epitaxy on a SiOx/Si(111)sub-strate.Also,heterostructured InAs/InAsN and InAsN/InP nanowires were grown in the core/shell geometry.In th...InAsN nanowires on InAs stems were obtained using plasma-assisted molecular beam epitaxy on a SiOx/Si(111)sub-strate.Also,heterostructured InAs/InAsN and InAsN/InP nanowires were grown in the core/shell geometry.In the low-temperature photoluminescence spectra of the grown structures,spectral features are observed that correspond to the polytypic structure of nanowires with a predominance of the wurtzite phase and parasitic islands of the sphalerite phase.It was shown that the interband photoluminescence spectral features of InAsN nanowires experience a red shift relative to the pristine InAs nanowires.The incorporation of nitrogen reduces the bandgap by splitting the conduction band into two subbands.The position of the spectral features in the photoluminescence spectra confirms the formation of a nitride solid solution with a poly-typic hexagonal structure,having a concentration of nitrogen atoms of up to 0.7%.Additional passivation of the nanowire surface with InP leads to a decrease in the intensity of nonradiative recombination and an improvement in the photoluminescent response of the nanowires,which makes it possible to detect photoluminescence emission at room temperature.Thus,by changing the composition and morphology of nanowires,it is possible to control their electronic structure,which allows varying the operating range of detectors and mid-IR radiation sources based on them.展开更多
基金the Ministry of Education and Science of the Russian Federation (state assignment No. FSEG-2023-0016) for financial support of optical studiesfinancially supported by FSRM 2023-0007 project provided by the Ministry of Education and Science of the Russian Federation.
文摘InAsN nanowires on InAs stems were obtained using plasma-assisted molecular beam epitaxy on a SiOx/Si(111)sub-strate.Also,heterostructured InAs/InAsN and InAsN/InP nanowires were grown in the core/shell geometry.In the low-temperature photoluminescence spectra of the grown structures,spectral features are observed that correspond to the polytypic structure of nanowires with a predominance of the wurtzite phase and parasitic islands of the sphalerite phase.It was shown that the interband photoluminescence spectral features of InAsN nanowires experience a red shift relative to the pristine InAs nanowires.The incorporation of nitrogen reduces the bandgap by splitting the conduction band into two subbands.The position of the spectral features in the photoluminescence spectra confirms the formation of a nitride solid solution with a poly-typic hexagonal structure,having a concentration of nitrogen atoms of up to 0.7%.Additional passivation of the nanowire surface with InP leads to a decrease in the intensity of nonradiative recombination and an improvement in the photoluminescent response of the nanowires,which makes it possible to detect photoluminescence emission at room temperature.Thus,by changing the composition and morphology of nanowires,it is possible to control their electronic structure,which allows varying the operating range of detectors and mid-IR radiation sources based on them.
