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InAs-based interband cascade lasers at 4.0μm operating at room temperature 被引量:4
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作者 Tian Yu Shuman Liu +9 位作者 Jinchuan Zhang Bo Xu Lijun Wang Junqi Liu Ning Zhuo Shenqiang Zhai Xiaoling Ye Yonghai Chen Fengqi Liu Zhanguo Wang 《Journal of Semiconductors》 EI CAS CSCD 2018年第11期36-39,共4页
InAs-based interband cascade lasers(ICLs)with InAs plasmon waveguides or InAs/AlSb superlattice(SL)waveguides were demonstrated at emission wavelengths below 4.1μm.The threshold current densities of the lasers with S... InAs-based interband cascade lasers(ICLs)with InAs plasmon waveguides or InAs/AlSb superlattice(SL)waveguides were demonstrated at emission wavelengths below 4.1μm.The threshold current densities of the lasers with SL waveguides were 37 A/cm;at 77 K in continuous wave mode.The operation temperature of these lasers reached room temperature in pulsed mode.Compared with the thick InAs n++plasmon cladding layer,the InAs/AlSb superlattice cladding layers have greater advantages for ICLs with wavelengths less than 4μm even in InAs based ICLs because in the short-wavelength region they have a higher confinement factor than InAs plasmon waveguides. 展开更多
关键词 interband cascade laser inas-based InAs/AlSb superlattice
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