The phenomenon of mutual compensation of radiation donors and acceptors is discovered in IrtAs-InP solid solutions. This phenomenon is a result of opposite directed radiation processes, taking place in the irradiated ...The phenomenon of mutual compensation of radiation donors and acceptors is discovered in IrtAs-InP solid solutions. This phenomenon is a result of opposite directed radiation processes, taking place in the irradiated InAs-InP solid solutions. The radiation creates donor type defects in the sublattice of InAs and electrons concentration increases. The contrary process occurs in the sublattice of InP. Radiation originates acceptor type defects and the carrier concentration decreases. The noted effect is going on in the all alloy composition. Exact mutual compensation of radiation donors and acceptors is achieved by selecting of the alloys definite composition. As a result, the main parameter of semiconductors-electrons concentration remains constant even under the hard radiation with fluences of Ф = 2 × 10^18 fast neutrons/cm^2. So there has been created radiation-resistant material.展开更多
文摘The phenomenon of mutual compensation of radiation donors and acceptors is discovered in IrtAs-InP solid solutions. This phenomenon is a result of opposite directed radiation processes, taking place in the irradiated InAs-InP solid solutions. The radiation creates donor type defects in the sublattice of InAs and electrons concentration increases. The contrary process occurs in the sublattice of InP. Radiation originates acceptor type defects and the carrier concentration decreases. The noted effect is going on in the all alloy composition. Exact mutual compensation of radiation donors and acceptors is achieved by selecting of the alloys definite composition. As a result, the main parameter of semiconductors-electrons concentration remains constant even under the hard radiation with fluences of Ф = 2 × 10^18 fast neutrons/cm^2. So there has been created radiation-resistant material.
