There is nonradiative recombination in waveguide region owing to severe carrier leakage,which in turn reduces output power and wall-plug efficiency.In this paper,we designed a novel epitaxial structure,which suppresse...There is nonradiative recombination in waveguide region owing to severe carrier leakage,which in turn reduces output power and wall-plug efficiency.In this paper,we designed a novel epitaxial structure,which suppresses carrier leakage by inserting n-Ga_(0.55)In_(0.45)P and p-GaAs_(0.6)P_(0.4) between barriers and waveguide layers,respectively,to modulate the energy band structure and to increase the height of barrier.The results show that the leakage current density reduces by 87.71%,compared to traditional structure.The nonradiative recombination current density of novel structure reduces to 37.411 A/cm^(2),and the output power reaches 12.80 W with wall-plug efficiency of 78.24%at an injection current density 5 A/cm^(2) at room temperature.In addition,the temperature drift coefficient of center wavelength is 0.206 nm/℃at the temperature range from 5℃to 65℃,and the slope of fitted straight line of threshold current with temperature variation is 0.00113.The novel epitaxial structure provides a theoretical basis for achieving high-power laser diode.展开更多
为提高势垒型中波InAs/InAsSb二类超晶格红外探测器器件性能,研究并设计了nBn势垒型InAs/InAsSb器件结构。针对InAs/InAsSb红外探测器器件结构特征,分析了暗电流的主导机制和能带特性,采用基于泊松方程、连续性方程和热方程的数值计算方...为提高势垒型中波InAs/InAsSb二类超晶格红外探测器器件性能,研究并设计了nBn势垒型InAs/InAsSb器件结构。针对InAs/InAsSb红外探测器器件结构特征,分析了暗电流的主导机制和能带特性,采用基于泊松方程、连续性方程和热方程的数值计算方法,通过精确调控吸收层掺杂、势垒层掺杂、势垒层厚度、温度和组分等,构建出高能量势垒以有效阻挡多数载流子,允许少数载流子迁移,实现价带偏移(Valence Band Offset,VBO)接近于零的要求,从而有效降低暗电流。研究结果表明,在1×10^(15)~1×10^(17)cm^(-3)范围内降低势垒层掺杂浓度,VBO和暗电流开启电压绝对值均会减小,当AlAs1-xSbx势垒中Sb组分为0.91时,VBO接近于零。对于吸收层,随着掺杂浓度的提高,暗电流呈现减小趋势,但趋势较不明显。在-0.5V偏压,140 K工作条件下,吸收层和势垒层掺杂浓度分别为1×10^(13)cm^(-3),1×10^(15)cm^(-3),吸收层与势垒层厚度分别为3μm,80 nm,得到器件结构参数优化后的暗电流低至4.5×10^(-7)A/cm^(2),证明InAs/InAsSb中波红外探测器具有高温工作的应用前景,可广泛应用于导弹预警、红外制导、航空航天等领域。展开更多
In this paper,a planar junction mid-wavelength infrared(MWIR)photodetector based on an InAs/GaSb type-Ⅱsuper-lattices(T2SLs)is reported.The Intrinsic-πMN superlattices was grown by the molecular beam epitaxy(MBE),fo...In this paper,a planar junction mid-wavelength infrared(MWIR)photodetector based on an InAs/GaSb type-Ⅱsuper-lattices(T2SLs)is reported.The Intrinsic-πMN superlattices was grown by the molecular beam epitaxy(MBE),followed with a ZnS layer grown by the chemical vapor deposition(CVD).The p-type contact layer was constructed by thermal diffusion in the undoped superlattices.The Zinc atom was successfully realised into the superlattice and a PπMN T2SL structure was con-structed.Furthermore,the effects of different diffusion temperatures on the dark current performance of the devices were researched.The 50%cut-off wavelength of the photodetector is 5.26μm at 77 K with 0 V bias.The minimum dark current density is 8.67×10^(−5) A/cm^(2) and the maximum quantum efficiency of 42.5%,and the maximum detectivity reaches 3.90×10^(10) cm·Hz^(1/2)/W at 77 K.The 640×512 focal plane arrays(FPA)based on the planner junction were fabricated afterwards.The FPA achieves a noise equivalent temperature difference(NETD)of 539 mK.展开更多
本文报道了1280×1024元InAs/GaSb II类超晶格中/中波双色红外焦平面阵列探测器的研究结果。探测器采用PN-NP叠层双色外延结构,信号提取采用叠层双色结构和顺序读出方式。运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外...本文报道了1280×1024元InAs/GaSb II类超晶格中/中波双色红外焦平面阵列探测器的研究结果。探测器采用PN-NP叠层双色外延结构,信号提取采用叠层双色结构和顺序读出方式。运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为中波1:6 ML InAs/7 ML GaSb和中波2:9 ML InAs/7 ML GaSb。焦平面阵列像元中心距为12μm。在80 K时测试,器件双波段的工作谱段为中波1:3~4μm,中波2:3.8~5.2μm。中波1器件平均峰值探测率达到6.32×10^(11) cm·Hz^(1/2)W^(-1),中波2器件平均峰值探测率达到2.84×10^(11) cm·Hz^(1/2)W^(-1)。红外焦平面偏压调节成像测试得到清晰的双波段成像。本文是国内首次报道1280×1024规模InAs/GaSb II类超晶格中/中波双色红外焦平面探测器。展开更多
In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are of...In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are often constrained by the reliance on off-chip light sources and detectors.In this study,we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated detector.The GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are connected through evanescent coupling,facilitating efficient and highquality detection of mid-infrared light with minimal loss.We conducted a simulation to analyze the photoelectric characteristics of the device.Additionally,we investigated the factors that affect the integration of the InAs/GaAs⁃Sb superlattice photodetector and the GaAsSb waveguide.Optimal thicknesses and lengths for the absorption lay⁃er are determined.When the absorption layer has a thickness of 0.3μm and a length of 50μm,the noise equiva⁃lent power reaches its minimum value,and the quantum efficiency can achieve a value of 68.9%.The utilization of waveguide detectors constructed with Ⅲ-Ⅴ materials offers a more convenient means of integrating mid-infra⁃red light sources and achieving photoelectric detection chips.展开更多
文摘There is nonradiative recombination in waveguide region owing to severe carrier leakage,which in turn reduces output power and wall-plug efficiency.In this paper,we designed a novel epitaxial structure,which suppresses carrier leakage by inserting n-Ga_(0.55)In_(0.45)P and p-GaAs_(0.6)P_(0.4) between barriers and waveguide layers,respectively,to modulate the energy band structure and to increase the height of barrier.The results show that the leakage current density reduces by 87.71%,compared to traditional structure.The nonradiative recombination current density of novel structure reduces to 37.411 A/cm^(2),and the output power reaches 12.80 W with wall-plug efficiency of 78.24%at an injection current density 5 A/cm^(2) at room temperature.In addition,the temperature drift coefficient of center wavelength is 0.206 nm/℃at the temperature range from 5℃to 65℃,and the slope of fitted straight line of threshold current with temperature variation is 0.00113.The novel epitaxial structure provides a theoretical basis for achieving high-power laser diode.
文摘为提高势垒型中波InAs/InAsSb二类超晶格红外探测器器件性能,研究并设计了nBn势垒型InAs/InAsSb器件结构。针对InAs/InAsSb红外探测器器件结构特征,分析了暗电流的主导机制和能带特性,采用基于泊松方程、连续性方程和热方程的数值计算方法,通过精确调控吸收层掺杂、势垒层掺杂、势垒层厚度、温度和组分等,构建出高能量势垒以有效阻挡多数载流子,允许少数载流子迁移,实现价带偏移(Valence Band Offset,VBO)接近于零的要求,从而有效降低暗电流。研究结果表明,在1×10^(15)~1×10^(17)cm^(-3)范围内降低势垒层掺杂浓度,VBO和暗电流开启电压绝对值均会减小,当AlAs1-xSbx势垒中Sb组分为0.91时,VBO接近于零。对于吸收层,随着掺杂浓度的提高,暗电流呈现减小趋势,但趋势较不明显。在-0.5V偏压,140 K工作条件下,吸收层和势垒层掺杂浓度分别为1×10^(13)cm^(-3),1×10^(15)cm^(-3),吸收层与势垒层厚度分别为3μm,80 nm,得到器件结构参数优化后的暗电流低至4.5×10^(-7)A/cm^(2),证明InAs/InAsSb中波红外探测器具有高温工作的应用前景,可广泛应用于导弹预警、红外制导、航空航天等领域。
基金supported by the National Key Technologies R&D Program of China(Grant Nos.2024YFA1208904,2019YFA0705203)Major Program of the National Natural Science Foundation of China(Grant Nos.62004189,61274013)+1 种基金the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB0460000)the Research Foundation for Advanced Talents of the Chinese Academy of Sciences(Grant No.E27RBB03).
文摘In this paper,a planar junction mid-wavelength infrared(MWIR)photodetector based on an InAs/GaSb type-Ⅱsuper-lattices(T2SLs)is reported.The Intrinsic-πMN superlattices was grown by the molecular beam epitaxy(MBE),followed with a ZnS layer grown by the chemical vapor deposition(CVD).The p-type contact layer was constructed by thermal diffusion in the undoped superlattices.The Zinc atom was successfully realised into the superlattice and a PπMN T2SL structure was con-structed.Furthermore,the effects of different diffusion temperatures on the dark current performance of the devices were researched.The 50%cut-off wavelength of the photodetector is 5.26μm at 77 K with 0 V bias.The minimum dark current density is 8.67×10^(−5) A/cm^(2) and the maximum quantum efficiency of 42.5%,and the maximum detectivity reaches 3.90×10^(10) cm·Hz^(1/2)/W at 77 K.The 640×512 focal plane arrays(FPA)based on the planner junction were fabricated afterwards.The FPA achieves a noise equivalent temperature difference(NETD)of 539 mK.
文摘本文报道了1280×1024元InAs/GaSb II类超晶格中/中波双色红外焦平面阵列探测器的研究结果。探测器采用PN-NP叠层双色外延结构,信号提取采用叠层双色结构和顺序读出方式。运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为中波1:6 ML InAs/7 ML GaSb和中波2:9 ML InAs/7 ML GaSb。焦平面阵列像元中心距为12μm。在80 K时测试,器件双波段的工作谱段为中波1:3~4μm,中波2:3.8~5.2μm。中波1器件平均峰值探测率达到6.32×10^(11) cm·Hz^(1/2)W^(-1),中波2器件平均峰值探测率达到2.84×10^(11) cm·Hz^(1/2)W^(-1)。红外焦平面偏压调节成像测试得到清晰的双波段成像。本文是国内首次报道1280×1024规模InAs/GaSb II类超晶格中/中波双色红外焦平面探测器。
基金Supported by National Basic Research Program of China(2012CB619202)Founding of Key Laboratory of Infrared Imaging Materials and Detectors,Chinese Academy of Sciences and Innovative Founding of Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences
基金Supported by the National Natural Science Foundation of China(NSFC)(61904183,61974152,62104237,62004205)the Youth Innovation Promotion Association of the Chinese Academy of Sciences(Y202057)+1 种基金Shanghai Science and Technology Committee Rising-Star Program(20QA1410500)Shanghai Sail Plans(21YF1455000)。
文摘In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are often constrained by the reliance on off-chip light sources and detectors.In this study,we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated detector.The GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are connected through evanescent coupling,facilitating efficient and highquality detection of mid-infrared light with minimal loss.We conducted a simulation to analyze the photoelectric characteristics of the device.Additionally,we investigated the factors that affect the integration of the InAs/GaAs⁃Sb superlattice photodetector and the GaAsSb waveguide.Optimal thicknesses and lengths for the absorption lay⁃er are determined.When the absorption layer has a thickness of 0.3μm and a length of 50μm,the noise equiva⁃lent power reaches its minimum value,and the quantum efficiency can achieve a value of 68.9%.The utilization of waveguide detectors constructed with Ⅲ-Ⅴ materials offers a more convenient means of integrating mid-infra⁃red light sources and achieving photoelectric detection chips.
