In this paper,a planar junction mid-wavelength infrared(MWIR)photodetector based on an InAs/GaSb type-Ⅱsuper-lattices(T2SLs)is reported.The Intrinsic-πMN superlattices was grown by the molecular beam epitaxy(MBE),fo...In this paper,a planar junction mid-wavelength infrared(MWIR)photodetector based on an InAs/GaSb type-Ⅱsuper-lattices(T2SLs)is reported.The Intrinsic-πMN superlattices was grown by the molecular beam epitaxy(MBE),followed with a ZnS layer grown by the chemical vapor deposition(CVD).The p-type contact layer was constructed by thermal diffusion in the undoped superlattices.The Zinc atom was successfully realised into the superlattice and a PπMN T2SL structure was con-structed.Furthermore,the effects of different diffusion temperatures on the dark current performance of the devices were researched.The 50%cut-off wavelength of the photodetector is 5.26μm at 77 K with 0 V bias.The minimum dark current density is 8.67×10^(−5) A/cm^(2) and the maximum quantum efficiency of 42.5%,and the maximum detectivity reaches 3.90×10^(10) cm·Hz^(1/2)/W at 77 K.The 640×512 focal plane arrays(FPA)based on the planner junction were fabricated afterwards.The FPA achieves a noise equivalent temperature difference(NETD)of 539 mK.展开更多
Type-Ⅱ InAs/GaSb superlattiees made of 13 InAs monolayers （MLs） and 7 GaSb MLs are grown on GaSb substrates by solid source molecular beam epitaxy. To obtain lattice-matched structures, thin InSb layers are inserte...Type-Ⅱ InAs/GaSb superlattiees made of 13 InAs monolayers （MLs） and 7 GaSb MLs are grown on GaSb substrates by solid source molecular beam epitaxy. To obtain lattice-matched structures, thin InSb layers are inserted between InAs and GaSb layers. We complete a series of experiments to investigate the influence of the InSb deposition time, Ⅴ/Ⅲ beam-equivalent pressure ratio and interruption time between each layer, and then characterize the superlattice （SL） structures with high-resolution x-ray diffraction and atomic force microscopy. The optimized growth parameters are applied to grow the 100-period SL structure, resulting in the full-width half-maximum of 29.55 arcsee for the first SL satellite peak and zero lattice-mismatch between the zero-order SL peak and the GaSb substrate peak.展开更多
Type-Ⅱsuperlattice(T2SL)materials are the key element for infrared(IR)detectors.However,it is well known that the characteristics of the detectors with the T2SL layer are greatly affected by the strain developed duri...Type-Ⅱsuperlattice(T2SL)materials are the key element for infrared(IR)detectors.However,it is well known that the characteristics of the detectors with the T2SL layer are greatly affected by the strain developed during the growth process,which determines the performance of IR detectors.Therefore,great efforts have been made to properly control the strain effect and develop relevant analysis methods to evaluate the strain-induced dark current characteristics.In this work,we report the strain-induced dark current characteristics in InAs/GaSb T2SL MWIR photodetector.The overall strain of InAs/GaSb T2SL layer was analyzed by both high-resolution X-ray diffraction(HRXRD)and the dark current measured from the absorber layer at the elevated temperatures(≥110 K),where the major leakage current component is originated from the reduced minority carrier lifetime in the absorber layer.Our findings indicate that minority carrier lifetime increases as the tensile strain on the InAs/GaSb T2SL is more compensated by the compressive strain through‘InSb-like’interface,which reduces the dark current density of the device.Specifically,tensile strain compensated devices exhibited the dark current density of less than 2×10^-5 A/cm^2 at 120 K,which is more than one order of magnitude lower value compared to that of the device without tensile strain relaxation.展开更多
We systematically investigate the influence of InSb interface(IF)engineering on the crystal quality and optical properties of strain-balanced InAs/GaSb type-Ⅱsuperlattices(T2SLs).The type-Ⅱsuperlattice structure is ...We systematically investigate the influence of InSb interface(IF)engineering on the crystal quality and optical properties of strain-balanced InAs/GaSb type-Ⅱsuperlattices(T2SLs).The type-Ⅱsuperlattice structure is 120 periods InAs(8 ML)/GaSb(6 ML)with different thicknesses of InSb interface grown by molecular beam epitaxy(MBE).The highresolution x-ray diffraction(XRD)curves display sharp satellite peaks,and the narrow full width at half maximum(FWHM)of the 0th is only 30-39 arcsec.From high-resolution cross-sectional transmission electron microscopy(HRTEM)characterization,the InSb heterointerfaces and the clear spatial separation between the InAs and GaSb layers can be more intuitively distinguished.As the InSb interface thickness increases,the compressive strain increases,and the surface“bright spots”appear to be more apparent from the atomic force microscopy(AFM)results.Also,photoluminescence(PL)measurements verify that,with the increase in the strain,the bandgap of the superlattice narrows.By optimizing the InSb interface,a high-quality crystal with a well-defined surface and interface is obtained with a PL wavelength of 4.78μm,which can be used for mid-wave infrared(MWIR)detection.展开更多
InAs/GaSb type-II superlattce (T2SL) photodetector structures at the MWIR regime were grown by molecular beam epitaxy. The growth temperature and group-V soaking times were optimized with respect to interface and tran...InAs/GaSb type-II superlattce (T2SL) photodetector structures at the MWIR regime were grown by molecular beam epitaxy. The growth temperature and group-V soaking times were optimized with respect to interface and transport quality. Novel strain compensation schemes with insertion of InSb layers were proposed and tested to be efficient to tune the overall strain between tensile and compressive without degradation of interface and optical quality. The effect of the proposed methods is modeled by analytic functions.? Band structure calculations were also carried out for the proposed T2SL structures to assist optimizing sample designs. Single pixel photodiodes with a low dark current were demonstrated.展开更多
This study reports the performance of an InAs/GaSb type-Ⅱ superlattices(T2SLs) detector with nBn structure for mid-wavelength infrared(MWIR) detection. An electronic band structure of M barrier is calculated using 8-...This study reports the performance of an InAs/GaSb type-Ⅱ superlattices(T2SLs) detector with nBn structure for mid-wavelength infrared(MWIR) detection. An electronic band structure of M barrier is calculated using 8-band k·p method, and the nBn structure is designed with the M barrier. The detector is prepared by wet etching, which is simple in manufacturing process. X-ray diffraction(XRD) and atomic force microscope(AFM) characteristics indicate that the detector material has good crystal quality and surface morphology. The saturation bias of the spectral response measurements at 77 K is 300 m V, and the device is promising to work at a temperature of 140 K. Energy gap of T2SLs versus temperature is fitted by the Varshni curve, and zero temperature bandgap Eg(0), empirical coefficients α and β are extracted. A dark current density of 3.2×10-5A/cm2and differential resistance area(RA) product of 1.0×104Ω·cm2are measured at 77 K. The dominant mechanism of dark current at different temperature ranges is analyzed. The device with a 50% cutoff wavelength of 4.68 μm exhibits a responsivity of 0.6 A/W, a topside illuminated quantum efficiency of 20% without antireflection coating(ARC), and a detectivity of 9.17×1011cm·Hz1/2/W at 77 K and 0.3 V.展开更多
By optimizing theⅤ/Ⅲbeam-equivalent pressure ratio,a high-quality InAs/GaSb type-Ⅱsuperlattice material for the long-wavelength infrared(LWIR)range is achieved by molecular beam epitaxy(MBE).High-resolution x-ray d...By optimizing theⅤ/Ⅲbeam-equivalent pressure ratio,a high-quality InAs/GaSb type-Ⅱsuperlattice material for the long-wavelength infrared(LWIR)range is achieved by molecular beam epitaxy(MBE).High-resolution x-ray diffraction(HRXRD),atomic force microscopy(AFM),and Fourier transform infrared(FTIR)spectrometer are used to characterize the material growth quality.The results show that the full width at half maximum(FWHM)of the superlattice zero-order diffraction peak,the mismatching of the superlattice zero-order diffraction peak between the substrate diffraction peaks,and the surface roughness get the best results when the beam-equivalent pressure(BEP)ratio reaches the optimal value,which are 28 arcsec,13 arcsec,and 1.63?,respectively.The intensity of the zero-order diffraction peak is strongest at the optimal value.The relative spectral response of the LWIR detector shows that it exhibits a 100%cut-off wavelength of 12.6μm at 77 K.High-quality epitaxial materials have laid a good foundation for preparing high-performance LWIR detector.展开更多
We present a theoretical study on the terahertz (THz) optoelectronic properties of long-period InAs/GaSb type-II super lattices (SLs). The eight-band k·p model is used to calculate the electronic structures of su...We present a theoretical study on the terahertz (THz) optoelectronic properties of long-period InAs/GaSb type-II super lattices (SLs). The eight-band k·p model is used to calculate the electronic structures of such SLs and on the basis of band structures, the Boltzmann equation approach is employed to calculate the optical absorption coefficients for the corresponding SL systems. It is found that long-period InAs/GaSb type-II SLs have a considerable absorption in the THz bandwidth. By examining the dependence of THz absorption coefficient on the InAs/GaSb layer widths, we demonstrate that with a proper choice of InAs/GaSb layer widths, an optimized THz absorption can be achieved. This study is pertinent to the potential application of InAs/GaSb type-II SLs as THz photo detectors.展开更多
We report a type-Ⅱ InAs/GaSb superlattice three-color infrared detector for mid-wave （MW）, long-wave （LW）, and very long-wave （VLW） detections. The detector structure consists of three contacts of NIPIN archite...We report a type-Ⅱ InAs/GaSb superlattice three-color infrared detector for mid-wave （MW）, long-wave （LW）, and very long-wave （VLW） detections. The detector structure consists of three contacts of NIPIN architecture for MW and LW detections, and hetero-junction NIP architecture for VLW detection. It is found that the spectral crosstalks can be significantly reduced by controlling the minority carriers transport via doping beryllium in the two active regions of NIPIN section. The crosstalk detection at MW, LW, and VLW signals are achieved by selecting the bias voltages on the device. At 77K, the cutoff wavelengths of the three-color detection are 5.3μm （at OmV）, 141μm （at 300mV） and 19μm （at -20mV） with the detectivities of 4.6xlO11 cm.Hzl/ZW-1, 2.3×10^10 cm.Hzl/2W-1, and 1.0×10^10cm.Hzl/2W-1 for MW, LW and VLW. The crosstalks of the MW channel, LW channel, and VLW channel are almost 0, 0.25, and 0.6, respectively.展开更多
A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-ⅡInAs/GaSb superlattice.The saturated responsivity was achieved under low bias voltage for both channels.The device c...A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-ⅡInAs/GaSb superlattice.The saturated responsivity was achieved under low bias voltage for both channels.The device could be operated as a single detector for sequential detection and showed high quantum efficiencies.The peak quantum efficiencies of long-wavelength infrared band-1(blue channel)and long-wavelength infrared band-2(red channel)were 44%at 6.3μm under 20 mV and 57%at 9.1μm under-60 mV,respectively.The optical performance for each channel was achieved using a 2μm thickness absorber.Due to the high QE,the specific detectivities of the blue and red channels reached5.0×10^(11)cm·Hz^(1/2)/W at 6.8μm and 3.1×10^(11)cm·Hz1^(1/2)/W at 9.1μm,respectively,at 77 K.展开更多
This paper presents a theoretical study on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattices with different beryllium concentrations in the InAs layer of the active region. Dark cur...This paper presents a theoretical study on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattices with different beryllium concentrations in the InAs layer of the active region. Dark current, resistancearea product, absorption coefficient and quantum efficiency characteristics are thoroughly examined. The superlattice is residually n-type and it becomes slightly p-type by varying beryllium-doping concentrations, which improves its electrical performances. The optical performances remain almost unaffected with relatively low p-doping levels and begin to deteriorate with increasing p-doping density. To make a compromise between the electrical and optical performances, the photodetector with a doping concentration of 3 ×10^15 cm-3 in the active region is believed to have the best overall performances.展开更多
InAs/GaSb type-II superlattices were grown on(100)GaSb substrates by metalorganic chemical vapor deposition.Raman scattering spectroscopy reveals that it is possible to grow superlattices with almost pure GaAs-like an...InAs/GaSb type-II superlattices were grown on(100)GaSb substrates by metalorganic chemical vapor deposition.Raman scattering spectroscopy reveals that it is possible to grow superlattices with almost pure GaAs-like and mixed-like(plane of mixed As and Sb atoms that connect the GaSb and InAs layers)interfaces.Introducing the InSb-like interface results in nanopipes and As contamination of the GaSb layers.X-ray diffraction and atomic force microscopy demonstrate that the superlattices with a mixed-like interface have better morphology and crystalline quality.展开更多
The Energy band edges of type-Ⅱ InAs/GaSb(001)misaligned superlattices as functions of InAs and GaSb layer thicknesses are calculated by a pseudopotential method with quick convergency.The results show the trend of d...The Energy band edges of type-Ⅱ InAs/GaSb(001)misaligned superlattices as functions of InAs and GaSb layer thicknesses are calculated by a pseudopotential method with quick convergency.The results show the trend of deep-shallow transitions of impurities in the superlattices.The regime in which the superlattice changes from semiconductor to semimetal is also showed.展开更多
报道了320×256元InAs/GaSb II类超晶格红外双色焦平面阵列探测器的初步结果.探测器采用PN-NP叠层双色外延结构,信号提取采用顺序读出方式.运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为7 ...报道了320×256元InAs/GaSb II类超晶格红外双色焦平面阵列探测器的初步结果.探测器采用PN-NP叠层双色外延结构,信号提取采用顺序读出方式.运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为7 ML InAs/7 ML GaSb和10 ML InAs/10 ML GaSb.焦平面阵列像元中心距为30μm.在77 K时测试,器件双色波段的50%响应截止波长分别为4.2μm和5.5μm,其中N-on-P器件平均峰值探测率达到6.0×10^(10) cmHz^(1/2)W^(-1),盲元率为8.6%;P-on-N器件平均峰值探测率达到2.3×10~9 cmHz^(1/2)W^(-1),盲元率为9.8%.红外焦平面偏压调节成像测试得到较为清晰的双波段成像.展开更多
基金supported by the National Key Technologies R&D Program of China(Grant Nos.2024YFA1208904,2019YFA0705203)Major Program of the National Natural Science Foundation of China(Grant Nos.62004189,61274013)+1 种基金the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB0460000)the Research Foundation for Advanced Talents of the Chinese Academy of Sciences(Grant No.E27RBB03).
文摘In this paper,a planar junction mid-wavelength infrared(MWIR)photodetector based on an InAs/GaSb type-Ⅱsuper-lattices(T2SLs)is reported.The Intrinsic-πMN superlattices was grown by the molecular beam epitaxy(MBE),followed with a ZnS layer grown by the chemical vapor deposition(CVD).The p-type contact layer was constructed by thermal diffusion in the undoped superlattices.The Zinc atom was successfully realised into the superlattice and a PπMN T2SL structure was con-structed.Furthermore,the effects of different diffusion temperatures on the dark current performance of the devices were researched.The 50%cut-off wavelength of the photodetector is 5.26μm at 77 K with 0 V bias.The minimum dark current density is 8.67×10^(−5) A/cm^(2) and the maximum quantum efficiency of 42.5%,and the maximum detectivity reaches 3.90×10^(10) cm·Hz^(1/2)/W at 77 K.The 640×512 focal plane arrays(FPA)based on the planner junction were fabricated afterwards.The FPA achieves a noise equivalent temperature difference(NETD)of 539 mK.
基金Supported by the National Basic Research Program of China under Grant Nos 2015CB351902,2015CB932402 and 2012CB619203the National Natural Science Foundation of China under Grant Nos 61177070,11374295 and U1431231the National Key Research Program of China under Grant No 2011ZX01015-001
文摘Type-Ⅱ InAs/GaSb superlattiees made of 13 InAs monolayers （MLs） and 7 GaSb MLs are grown on GaSb substrates by solid source molecular beam epitaxy. To obtain lattice-matched structures, thin InSb layers are inserted between InAs and GaSb layers. We complete a series of experiments to investigate the influence of the InSb deposition time, Ⅴ/Ⅲ beam-equivalent pressure ratio and interruption time between each layer, and then characterize the superlattice （SL） structures with high-resolution x-ray diffraction and atomic force microscopy. The optimized growth parameters are applied to grow the 100-period SL structure, resulting in the full-width half-maximum of 29.55 arcsee for the first SL satellite peak and zero lattice-mismatch between the zero-order SL peak and the GaSb substrate peak.
基金supported by the research fund of Chungnam National University
文摘Type-Ⅱsuperlattice(T2SL)materials are the key element for infrared(IR)detectors.However,it is well known that the characteristics of the detectors with the T2SL layer are greatly affected by the strain developed during the growth process,which determines the performance of IR detectors.Therefore,great efforts have been made to properly control the strain effect and develop relevant analysis methods to evaluate the strain-induced dark current characteristics.In this work,we report the strain-induced dark current characteristics in InAs/GaSb T2SL MWIR photodetector.The overall strain of InAs/GaSb T2SL layer was analyzed by both high-resolution X-ray diffraction(HRXRD)and the dark current measured from the absorber layer at the elevated temperatures(≥110 K),where the major leakage current component is originated from the reduced minority carrier lifetime in the absorber layer.Our findings indicate that minority carrier lifetime increases as the tensile strain on the InAs/GaSb T2SL is more compensated by the compressive strain through‘InSb-like’interface,which reduces the dark current density of the device.Specifically,tensile strain compensated devices exhibited the dark current density of less than 2×10^-5 A/cm^2 at 120 K,which is more than one order of magnitude lower value compared to that of the device without tensile strain relaxation.
基金Project supported by the Beijing Scholars Program(Grant No.74A2111113)the Research Project of Beijing Education Committee(Grant No.KM202111232019)+1 种基金the National Natural Science Foundation of China(Grant No.62105039)the Research Project of Beijing Information Science&Technology University(Grant No.2022XJJ07)
文摘We systematically investigate the influence of InSb interface(IF)engineering on the crystal quality and optical properties of strain-balanced InAs/GaSb type-Ⅱsuperlattices(T2SLs).The type-Ⅱsuperlattice structure is 120 periods InAs(8 ML)/GaSb(6 ML)with different thicknesses of InSb interface grown by molecular beam epitaxy(MBE).The highresolution x-ray diffraction(XRD)curves display sharp satellite peaks,and the narrow full width at half maximum(FWHM)of the 0th is only 30-39 arcsec.From high-resolution cross-sectional transmission electron microscopy(HRTEM)characterization,the InSb heterointerfaces and the clear spatial separation between the InAs and GaSb layers can be more intuitively distinguished.As the InSb interface thickness increases,the compressive strain increases,and the surface“bright spots”appear to be more apparent from the atomic force microscopy(AFM)results.Also,photoluminescence(PL)measurements verify that,with the increase in the strain,the bandgap of the superlattice narrows.By optimizing the InSb interface,a high-quality crystal with a well-defined surface and interface is obtained with a PL wavelength of 4.78μm,which can be used for mid-wave infrared(MWIR)detection.
文摘InAs/GaSb type-II superlattce (T2SL) photodetector structures at the MWIR regime were grown by molecular beam epitaxy. The growth temperature and group-V soaking times were optimized with respect to interface and transport quality. Novel strain compensation schemes with insertion of InSb layers were proposed and tested to be efficient to tune the overall strain between tensile and compressive without degradation of interface and optical quality. The effect of the proposed methods is modeled by analytic functions.? Band structure calculations were also carried out for the proposed T2SL structures to assist optimizing sample designs. Single pixel photodiodes with a low dark current were demonstrated.
基金supported by the Beijing Scholars Program(No.74A2111113)the National Natural Science Foundation of China(No.62205029)+1 种基金the Young Elite Scientist Sponsorship Program by the China Association for Science and Technology(No.YESS20200146)the Beijing Natural Science Foundation(No.4202027).
文摘This study reports the performance of an InAs/GaSb type-Ⅱ superlattices(T2SLs) detector with nBn structure for mid-wavelength infrared(MWIR) detection. An electronic band structure of M barrier is calculated using 8-band k·p method, and the nBn structure is designed with the M barrier. The detector is prepared by wet etching, which is simple in manufacturing process. X-ray diffraction(XRD) and atomic force microscope(AFM) characteristics indicate that the detector material has good crystal quality and surface morphology. The saturation bias of the spectral response measurements at 77 K is 300 m V, and the device is promising to work at a temperature of 140 K. Energy gap of T2SLs versus temperature is fitted by the Varshni curve, and zero temperature bandgap Eg(0), empirical coefficients α and β are extracted. A dark current density of 3.2×10-5A/cm2and differential resistance area(RA) product of 1.0×104Ω·cm2are measured at 77 K. The dominant mechanism of dark current at different temperature ranges is analyzed. The device with a 50% cutoff wavelength of 4.68 μm exhibits a responsivity of 0.6 A/W, a topside illuminated quantum efficiency of 20% without antireflection coating(ARC), and a detectivity of 9.17×1011cm·Hz1/2/W at 77 K and 0.3 V.
基金Project supported by the National Key Technology R&D Program of China(Grant Nos.2018YFA0209104,2018YFA0209102,2019YFA0705203,and2019YFA070104)the National Natural Science Foundation of China(Grant Nos.61790581,61274013,and 62004189)the Key Research Program of the Chinese Academy of Sciences(Grant No.XDPB22).
文摘By optimizing theⅤ/Ⅲbeam-equivalent pressure ratio,a high-quality InAs/GaSb type-Ⅱsuperlattice material for the long-wavelength infrared(LWIR)range is achieved by molecular beam epitaxy(MBE).High-resolution x-ray diffraction(HRXRD),atomic force microscopy(AFM),and Fourier transform infrared(FTIR)spectrometer are used to characterize the material growth quality.The results show that the full width at half maximum(FWHM)of the superlattice zero-order diffraction peak,the mismatching of the superlattice zero-order diffraction peak between the substrate diffraction peaks,and the surface roughness get the best results when the beam-equivalent pressure(BEP)ratio reaches the optimal value,which are 28 arcsec,13 arcsec,and 1.63?,respectively.The intensity of the zero-order diffraction peak is strongest at the optimal value.The relative spectral response of the LWIR detector shows that it exhibits a 100%cut-off wavelength of 12.6μm at 77 K.High-quality epitaxial materials have laid a good foundation for preparing high-performance LWIR detector.
文摘We present a theoretical study on the terahertz (THz) optoelectronic properties of long-period InAs/GaSb type-II super lattices (SLs). The eight-band k·p model is used to calculate the electronic structures of such SLs and on the basis of band structures, the Boltzmann equation approach is employed to calculate the optical absorption coefficients for the corresponding SL systems. It is found that long-period InAs/GaSb type-II SLs have a considerable absorption in the THz bandwidth. By examining the dependence of THz absorption coefficient on the InAs/GaSb layer widths, we demonstrate that with a proper choice of InAs/GaSb layer widths, an optimized THz absorption can be achieved. This study is pertinent to the potential application of InAs/GaSb type-II SLs as THz photo detectors.
基金Supported by the National Basic Research Program of China under Grant Nos 2014CB643903,2013CB932904,2012CB932701 and 2011CB922201the National Special Funds for the Development of Major Research Equipment and Instruments of China under Grant No 2012YQ140005+7 种基金the Strategic Priority Research Program(B)of the Chinese Academy of Sciences under Grant No XDB01010200the China Postdoctoral Science Foundation-funded Project under Grant No 2014M561029the Program for New Century Excellent Talents in University under Grant No NCET-10-0066the National High-Technology Research and Development Program of China under Grant No 2013AA031502the Science and Technology Innovation Project of Harbin City under Grant No2011RFLXG006the National Natural Science Foundation of China under Grant Nos 61274013,U1037602,61306013,51202046,and 61290303the China Postdoctoral Science Foundation under Grant Nos 2012M510144 and 2013T60366the Fundamental Research Funds for the Central Universities under Grant Nos HIT.NSRIF.2013006 and HIT.BRETIII.201403
文摘We report a type-Ⅱ InAs/GaSb superlattice three-color infrared detector for mid-wave （MW）, long-wave （LW）, and very long-wave （VLW） detections. The detector structure consists of three contacts of NIPIN architecture for MW and LW detections, and hetero-junction NIP architecture for VLW detection. It is found that the spectral crosstalks can be significantly reduced by controlling the minority carriers transport via doping beryllium in the two active regions of NIPIN section. The crosstalk detection at MW, LW, and VLW signals are achieved by selecting the bias voltages on the device. At 77K, the cutoff wavelengths of the three-color detection are 5.3μm （at OmV）, 141μm （at 300mV） and 19μm （at -20mV） with the detectivities of 4.6xlO11 cm.Hzl/ZW-1, 2.3×10^10 cm.Hzl/2W-1, and 1.0×10^10cm.Hzl/2W-1 for MW, LW and VLW. The crosstalks of the MW channel, LW channel, and VLW channel are almost 0, 0.25, and 0.6, respectively.
基金supported by the National Key Technology R&D Program of China(Grant Nos.2018YFA0209104 and 2016YFB0402403)
文摘A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-ⅡInAs/GaSb superlattice.The saturated responsivity was achieved under low bias voltage for both channels.The device could be operated as a single detector for sequential detection and showed high quantum efficiencies.The peak quantum efficiencies of long-wavelength infrared band-1(blue channel)and long-wavelength infrared band-2(red channel)were 44%at 6.3μm under 20 mV and 57%at 9.1μm under-60 mV,respectively.The optical performance for each channel was achieved using a 2μm thickness absorber.Due to the high QE,the specific detectivities of the blue and red channels reached5.0×10^(11)cm·Hz^(1/2)/W at 6.8μm and 3.1×10^(11)cm·Hz1^(1/2)/W at 9.1μm,respectively,at 77 K.
基金Project supported by the Natural Science Foundation of Beijing (Grant No. 4112058)the National Natural Science Foundation of China (Grant Nos. 60906027, 60906028, 61036010, and 60636030)the Open Fund of Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education of China
文摘This paper presents a theoretical study on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattices with different beryllium concentrations in the InAs layer of the active region. Dark current, resistancearea product, absorption coefficient and quantum efficiency characteristics are thoroughly examined. The superlattice is residually n-type and it becomes slightly p-type by varying beryllium-doping concentrations, which improves its electrical performances. The optical performances remain almost unaffected with relatively low p-doping levels and begin to deteriorate with increasing p-doping density. To make a compromise between the electrical and optical performances, the photodetector with a doping concentration of 3 ×10^15 cm-3 in the active region is believed to have the best overall performances.
基金by the National Natural Science Foundation of China under Grant Nos 50990064 and 60990315.
文摘InAs/GaSb type-II superlattices were grown on(100)GaSb substrates by metalorganic chemical vapor deposition.Raman scattering spectroscopy reveals that it is possible to grow superlattices with almost pure GaAs-like and mixed-like(plane of mixed As and Sb atoms that connect the GaSb and InAs layers)interfaces.Introducing the InSb-like interface results in nanopipes and As contamination of the GaSb layers.X-ray diffraction and atomic force microscopy demonstrate that the superlattices with a mixed-like interface have better morphology and crystalline quality.
基金the Natural Science Foundation of Jiangxi Province.
文摘The Energy band edges of type-Ⅱ InAs/GaSb(001)misaligned superlattices as functions of InAs and GaSb layer thicknesses are calculated by a pseudopotential method with quick convergency.The results show the trend of deep-shallow transitions of impurities in the superlattices.The regime in which the superlattice changes from semiconductor to semimetal is also showed.
文摘报道了320×256元InAs/GaSb II类超晶格红外双色焦平面阵列探测器的初步结果.探测器采用PN-NP叠层双色外延结构,信号提取采用顺序读出方式.运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为7 ML InAs/7 ML GaSb和10 ML InAs/10 ML GaSb.焦平面阵列像元中心距为30μm.在77 K时测试,器件双色波段的50%响应截止波长分别为4.2μm和5.5μm,其中N-on-P器件平均峰值探测率达到6.0×10^(10) cmHz^(1/2)W^(-1),盲元率为8.6%;P-on-N器件平均峰值探测率达到2.3×10~9 cmHz^(1/2)W^(-1),盲元率为9.8%.红外焦平面偏压调节成像测试得到较为清晰的双波段成像.
