In this report, the effect of temperature on the In As/Al Sb heterojunction and high-electron-mobility transistors（HEMTs） with a gate length of 2 μm are discussed comprehensively. The results indicate that device p...In this report, the effect of temperature on the In As/Al Sb heterojunction and high-electron-mobility transistors（HEMTs） with a gate length of 2 μm are discussed comprehensively. The results indicate that device performance is greatly improved at cryogenic temperatures. It is also observed that the device performance at 90 K is significantly improved with 27% lower gate leakage current, 12% higher maximum drain current, and 22.5% higher peak transconductance compared to 300 K. The temperature dependence of mobility and the two-dimensional electron gas concentration in the In As/Al Sb heterojunction for the temperature range 90 K-300 K is also investigated. The electron mobility at 90 K（42560 cm2/V·s）is 2.5 times higher than its value at 300 K（16911 cm^2/V·s） because of the weaker lattice vibration and the impurity ionization at cryogenic temperatures, which corresponds to a reduced scattering rate and higher mobility. We also noted that the two-dimensional electron gas concentration decreases slightly from 1.99 × 10^（12） cm^（-2） at 300 K to 1.7 × 10^（12） cm^（-2） at 90 K with a decrease in temperature due to the lower ionization at cryogenic temperature and the nearly constant ？Ec.展开更多
InAs-based interband cascade lasers（ICLs） with InAs plasmon waveguides or InAs/AlSb superlattice（SL） waveguides were demonstrated at emission wavelengths below 4.1 μm. The threshold current densities of the laser...InAs-based interband cascade lasers（ICLs） with InAs plasmon waveguides or InAs/AlSb superlattice（SL） waveguides were demonstrated at emission wavelengths below 4.1 μm. The threshold current densities of the lasers with SL waveguides were 37 A/cm;at 77 K in continuous wave mode. The operation temperature of these lasers reached room temperature in pulsed mode. Compared with the thick InAs n++ plasmon cladding layer, the InAs/AlSb superlattice cladding layers have greater advantages for ICLs with wavelengths less than 4 μm even in InAs based ICLs because in the short-wavelength region they have a higher confinement factor than InAs plasmon waveguides.展开更多
The etching and passivation processes of very long wavelength infrared(VLWIR)detector based on the InAs/GaSb/AlSb type-II superlattice have been studied.By studying the effect of each component in the citric acid solu...The etching and passivation processes of very long wavelength infrared(VLWIR)detector based on the InAs/GaSb/AlSb type-II superlattice have been studied.By studying the effect of each component in the citric acid solution(citric acid,phosphoric acid,hydrogen peroxide,deionized water),the best solution ratio is obtained.After comparing different passivation materials such as sulfide+SiO_(2),Al_(2)O_(3),Si_(3)N_(4) and SU8,it is found that SU8 passivation can reduce the dark current of the device to a greater degree.Combining this wet etching and SU8 passivation,the of VLWIR detector with a mesa diameter of 500μm is about 3.6Ω·cm^(2) at 77 K.展开更多
基金Advanced Research Foundation of China(914xxx803-051xxx111)National Defense Advanced Research project(315xxxxx301)National Defense Innovation Program(48xx4).
基金Project supported by the Advanced Research Foundation of China(Grant No.914xxx803-051xxx111)the National Defense Advanced Research Project of China(Grant No.315xxxxx301)the National Defense Innovation Program of China(Grant No.48xx4)
文摘In this report, the effect of temperature on the In As/Al Sb heterojunction and high-electron-mobility transistors（HEMTs） with a gate length of 2 μm are discussed comprehensively. The results indicate that device performance is greatly improved at cryogenic temperatures. It is also observed that the device performance at 90 K is significantly improved with 27% lower gate leakage current, 12% higher maximum drain current, and 22.5% higher peak transconductance compared to 300 K. The temperature dependence of mobility and the two-dimensional electron gas concentration in the In As/Al Sb heterojunction for the temperature range 90 K-300 K is also investigated. The electron mobility at 90 K（42560 cm2/V·s）is 2.5 times higher than its value at 300 K（16911 cm^2/V·s） because of the weaker lattice vibration and the impurity ionization at cryogenic temperatures, which corresponds to a reduced scattering rate and higher mobility. We also noted that the two-dimensional electron gas concentration decreases slightly from 1.99 × 10^（12） cm^（-2） at 300 K to 1.7 × 10^（12） cm^（-2） at 90 K with a decrease in temperature due to the lower ionization at cryogenic temperature and the nearly constant ？Ec.
基金Project supported by the National Natural Science Foundation of China(Nos.61790583,61774150,61774151)the National Basic Research Program of China(No.2014CB643903)
文摘InAs-based interband cascade lasers（ICLs） with InAs plasmon waveguides or InAs/AlSb superlattice（SL） waveguides were demonstrated at emission wavelengths below 4.1 μm. The threshold current densities of the lasers with SL waveguides were 37 A/cm;at 77 K in continuous wave mode. The operation temperature of these lasers reached room temperature in pulsed mode. Compared with the thick InAs n++ plasmon cladding layer, the InAs/AlSb superlattice cladding layers have greater advantages for ICLs with wavelengths less than 4 μm even in InAs based ICLs because in the short-wavelength region they have a higher confinement factor than InAs plasmon waveguides.
基金supported by the National Basic Research Program of China(Grant Nos.2018YFA0209102 and 2019YFA070104)the National Natural Science Foundation of China(Grant Nos.61790581 and 61274013)the Key Research Program of the Chinese Academy of Sciences(Grant No.XDPB22)。
文摘The etching and passivation processes of very long wavelength infrared(VLWIR)detector based on the InAs/GaSb/AlSb type-II superlattice have been studied.By studying the effect of each component in the citric acid solution(citric acid,phosphoric acid,hydrogen peroxide,deionized water),the best solution ratio is obtained.After comparing different passivation materials such as sulfide+SiO_(2),Al_(2)O_(3),Si_(3)N_(4) and SU8,it is found that SU8 passivation can reduce the dark current of the device to a greater degree.Combining this wet etching and SU8 passivation,the of VLWIR detector with a mesa diameter of 500μm is about 3.6Ω·cm^(2) at 77 K.
