Pulsed metal organic chemical vapor deposition was employed to grow nearly polarization matched InAlGaN/GaN heterostructures.A relatively low sheet carrier density of 1.8×10^(12)cm^(-2),together with a high elect...Pulsed metal organic chemical vapor deposition was employed to grow nearly polarization matched InAlGaN/GaN heterostructures.A relatively low sheet carrier density of 1.8×10^(12)cm^(-2),together with a high electron mobility of 1229.5 cm^2/V·s,was obtained for the prepared heterostructures.The surface morphology of the heterostructures was also significantly improved,i.e.,with a root mean square roughness of 0.29 nm in a 2μm×2μm scan area.In addition to the improved properties,the enhancement-mode metal–oxide–semiconductor high electron mobility transistors(MOSHEMTs)processed on the heterostructures not only exhibited a high threshold voltage(VTH)of 3.1 V,but also demonstrated a significantly enhanced drain output current density of 669 m A/mm.These values probably represent the largest values obtained from the InAlGaN based enhancement-mode devices to the best of our knowledge.This study strongly indicates that the InAlGaN/GaN heterostructures grown by pulsed metal organic chemical vapor deposition could be promising for the applications of novel nitride-based electronic devices.展开更多
Nearly lattice-matched InAIGaN/GaN heterostructure is grown on sapphire substrates by pulsed metal organic chemical vapor deposition and excellent high electron mobility transistors are fabricated on this heterostruct...Nearly lattice-matched InAIGaN/GaN heterostructure is grown on sapphire substrates by pulsed metal organic chemical vapor deposition and excellent high electron mobility transistors are fabricated on this heterostructure. The electron mobility is 1668.08cm2/V.s together with a high two-dimensional-electron-gas density of 1.43 × 10^13 cm-2 for the InAlCaN/CaN heterostructure of 2Onto InAlCaN quaternary barrier. High electron mobility transistors with gate dimensions of 1 × 50 μm2 and 4μm source-drain distance exhibit the maximum drain current of 763.91 mA/mm, the maximum extrinsic transconductance of 163.13 mS/mm, and current gain and maximum oscillation cutoff frequencies of 11 GHz and 21 GHz, respectively.展开更多
The potential impact of GaN-based high electron mobility transistor (HEMT) with two channel layers of GaN/InAlGaN is reported. Using two-dimensional and two-carrier device simulations, we investigate the device perfor...The potential impact of GaN-based high electron mobility transistor (HEMT) with two channel layers of GaN/InAlGaN is reported. Using two-dimensional and two-carrier device simulations, we investigate the device performance focusing on the electrical potential, electron concentration, breakdown voltage and transconductance (gm). Also, the results have been compared with structure of AlGaN/GaN HEMT. Our simulation results reveal that the proposed structure increases electron concentration, breakdown voltage and transconductance;and reduces the leakage current. Also, the mole fraction of aluminum in the InAlGaN has been optimized to create the best performing device.展开更多
We demonstrate InGaN violet light-emitting superluminescent diodes with large spectral width suitable for applications in optical coherence spectroscopy.This was achieved using the concept of nonlinear indium content ...We demonstrate InGaN violet light-emitting superluminescent diodes with large spectral width suitable for applications in optical coherence spectroscopy.This was achieved using the concept of nonlinear indium content profile along the superluminescent diode waveguide.A specially designed 3D substrate surface shape leads to a step-like indium content profile,with the indium concentration in the InGaN/GaN quantum wells ranging approximately between 6% and 10%.Thanks to this approach,we were able to increase the width of the spectrum in processed devices from 2.6 nm(reference diode)to 15.5 nm.展开更多
基金Project supported by the National Postdoctoral Program for Innovative Talents,China(Grant No.BX201700184)the National Key Research and Development Program of China(Grant Nos.2016YFB0400105 and 2017YFB0403102)
文摘Pulsed metal organic chemical vapor deposition was employed to grow nearly polarization matched InAlGaN/GaN heterostructures.A relatively low sheet carrier density of 1.8×10^(12)cm^(-2),together with a high electron mobility of 1229.5 cm^2/V·s,was obtained for the prepared heterostructures.The surface morphology of the heterostructures was also significantly improved,i.e.,with a root mean square roughness of 0.29 nm in a 2μm×2μm scan area.In addition to the improved properties,the enhancement-mode metal–oxide–semiconductor high electron mobility transistors(MOSHEMTs)processed on the heterostructures not only exhibited a high threshold voltage(VTH)of 3.1 V,but also demonstrated a significantly enhanced drain output current density of 669 m A/mm.These values probably represent the largest values obtained from the InAlGaN based enhancement-mode devices to the best of our knowledge.This study strongly indicates that the InAlGaN/GaN heterostructures grown by pulsed metal organic chemical vapor deposition could be promising for the applications of novel nitride-based electronic devices.
基金Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02308-002the National Natural Sciences Foundation of China under Grant Nos 61574108,61334002,61474086 and 61306017
文摘Nearly lattice-matched InAIGaN/GaN heterostructure is grown on sapphire substrates by pulsed metal organic chemical vapor deposition and excellent high electron mobility transistors are fabricated on this heterostructure. The electron mobility is 1668.08cm2/V.s together with a high two-dimensional-electron-gas density of 1.43 × 10^13 cm-2 for the InAlCaN/CaN heterostructure of 2Onto InAlCaN quaternary barrier. High electron mobility transistors with gate dimensions of 1 × 50 μm2 and 4μm source-drain distance exhibit the maximum drain current of 763.91 mA/mm, the maximum extrinsic transconductance of 163.13 mS/mm, and current gain and maximum oscillation cutoff frequencies of 11 GHz and 21 GHz, respectively.
文摘The potential impact of GaN-based high electron mobility transistor (HEMT) with two channel layers of GaN/InAlGaN is reported. Using two-dimensional and two-carrier device simulations, we investigate the device performance focusing on the electrical potential, electron concentration, breakdown voltage and transconductance (gm). Also, the results have been compared with structure of AlGaN/GaN HEMT. Our simulation results reveal that the proposed structure increases electron concentration, breakdown voltage and transconductance;and reduces the leakage current. Also, the mole fraction of aluminum in the InAlGaN has been optimized to create the best performing device.
基金Narodowe Centrum Nauki(NCN)(2014/15/B/ST3/04252)Narodowe Centrum Badan'i Rozwoju(NCBR)(1/POLBER-1/2014)
文摘We demonstrate InGaN violet light-emitting superluminescent diodes with large spectral width suitable for applications in optical coherence spectroscopy.This was achieved using the concept of nonlinear indium content profile along the superluminescent diode waveguide.A specially designed 3D substrate surface shape leads to a step-like indium content profile,with the indium concentration in the InGaN/GaN quantum wells ranging approximately between 6% and 10%.Thanks to this approach,we were able to increase the width of the spectrum in processed devices from 2.6 nm(reference diode)to 15.5 nm.
