Two-dimensional(2D)materials have been widely used in optoelectronic detection due to their excellent physical properties.Nevertheless,there has been comparatively little focus on the differentiation of light-matter i...Two-dimensional(2D)materials have been widely used in optoelectronic detection due to their excellent physical properties.Nevertheless,there has been comparatively little focus on the differentiation of light-matter interactions across distinct channel paths within the same 2D material,as well as on the photoelectric characteristics exhibited by the surface,vertical,and bottom of device.In this paper,dual-parallel device structures utilizing 2Dα-In_(2)Se_(3) semiconductors are fabricated with four conductive channels named by bottom-horizontal channel(BHC),middle-vertical channel(MVC),surface-quasi-horizontal channel(SQHC),and surface-horizontal channel(SHC)devices.The SHC device exhibits superior optical response of 101 A/W and external quantum efficiency of 1.857×104%across all conductive channels,which is over 32 times greater than that of BHC device.The SHC device boasts a fast response time of 41 ms,comparable to 32 ms offered by the nanoscale channel of the MVC device,and has a slow decay time of 319 ms similar to the 424 ms that comes with the longest channel of the SQHC device.The SHC device has the highest degree of learning and the lowest forgetting rate compared to the other three channels.Optoelectronic synapses based on dual-parallelα-In_(2)Se_(3) device can also mimic biological color image perception and memory functions,which can be used to visually determine the synaptic function of the device.In this work,on top of the excellent optoelectronic and semiconducting properties of the van der Waals semiconductorα-In2Se3,the advantages offered by the device structure are further explored to promote the development of integrated optoelectronics.展开更多
分别采用超声微波溶剂热法、常压溶剂热法及高压溶剂热法制备In_2Se_3/CuSe粉体,研究不同方法制备In_2Se_3/CuSe粉体的物相、形貌,并利用涂覆–快速热处理法制作薄膜太阳电池吸收层。通过XRD、Raman、FESEM和TEM对样品的物相、形貌和组...分别采用超声微波溶剂热法、常压溶剂热法及高压溶剂热法制备In_2Se_3/CuSe粉体,研究不同方法制备In_2Se_3/CuSe粉体的物相、形貌,并利用涂覆–快速热处理法制作薄膜太阳电池吸收层。通过XRD、Raman、FESEM和TEM对样品的物相、形貌和组成进行了表征。结果表明:超声微波溶剂热法和常压溶剂热法得到的产物是以In_2Se_3+CuSe混合相的形式存在,高压溶剂热法合成的In_2Se_3/CuSe粉体则呈核壳结构,(以In_2Se_3为核,CuSe为壳)。涂覆–快速热处理法制备CIS薄膜的FESEM照片结果表明,高压溶剂热法合成的In_2Se_3/CuSe更容易获得平整致密的薄膜。将该CIS薄膜直接用于电池器件的组装,获得的光电性能参数:Voc为50 m V,Jsc为8 m A/cm^2。展开更多
We perform molecular beam epitaxy growth and scanning tunneling microscopy study of copper diselenide （CuSe2 ） films on SrTiO3 （001）. Using a Se-rich condition, the single-phase pyrite CuSe2 grows in the Stranski-...We perform molecular beam epitaxy growth and scanning tunneling microscopy study of copper diselenide （CuSe2 ） films on SrTiO3 （001）. Using a Se-rich condition, the single-phase pyrite CuSe2 grows in the Stranski-Krastanov （layer-plus-island） mode with a preferential orientation of （111）. Our careful inspection of both the as-grown and post-annealed CuSe2 films at various temperatures invariably shows a Cu-terminated surface, which, depending on the annealing temperature, reconstructs into two distinct structures 2 ×√3 and √x ×√3-R30°. The Cu termi- nation is supported by the depressed density of states near the Fermi level, measured by in-situ low temperature scanning tunneling spectroscopy. Our study helps understand the preparation and surface chemistry of transition metal pyrite dichalcogenides thin films.展开更多
基金supported by the National Natural Science Foundation of China(No.52302174)the Scientific Research Fund of Hunan Provincial Education Department(Nos.22B0726 and 22B0715)the Ultra-Multi-Wavelength LED Sources(UMW-60)of Qingdao Solar Scientific Instrument High-tech Co.,LTD.
文摘Two-dimensional(2D)materials have been widely used in optoelectronic detection due to their excellent physical properties.Nevertheless,there has been comparatively little focus on the differentiation of light-matter interactions across distinct channel paths within the same 2D material,as well as on the photoelectric characteristics exhibited by the surface,vertical,and bottom of device.In this paper,dual-parallel device structures utilizing 2Dα-In_(2)Se_(3) semiconductors are fabricated with four conductive channels named by bottom-horizontal channel(BHC),middle-vertical channel(MVC),surface-quasi-horizontal channel(SQHC),and surface-horizontal channel(SHC)devices.The SHC device exhibits superior optical response of 101 A/W and external quantum efficiency of 1.857×104%across all conductive channels,which is over 32 times greater than that of BHC device.The SHC device boasts a fast response time of 41 ms,comparable to 32 ms offered by the nanoscale channel of the MVC device,and has a slow decay time of 319 ms similar to the 424 ms that comes with the longest channel of the SQHC device.The SHC device has the highest degree of learning and the lowest forgetting rate compared to the other three channels.Optoelectronic synapses based on dual-parallelα-In_(2)Se_(3) device can also mimic biological color image perception and memory functions,which can be used to visually determine the synaptic function of the device.In this work,on top of the excellent optoelectronic and semiconducting properties of the van der Waals semiconductorα-In2Se3,the advantages offered by the device structure are further explored to promote the development of integrated optoelectronics.
文摘分别采用超声微波溶剂热法、常压溶剂热法及高压溶剂热法制备In_2Se_3/CuSe粉体,研究不同方法制备In_2Se_3/CuSe粉体的物相、形貌,并利用涂覆–快速热处理法制作薄膜太阳电池吸收层。通过XRD、Raman、FESEM和TEM对样品的物相、形貌和组成进行了表征。结果表明:超声微波溶剂热法和常压溶剂热法得到的产物是以In_2Se_3+CuSe混合相的形式存在,高压溶剂热法合成的In_2Se_3/CuSe粉体则呈核壳结构,(以In_2Se_3为核,CuSe为壳)。涂覆–快速热处理法制备CIS薄膜的FESEM照片结果表明,高压溶剂热法合成的In_2Se_3/CuSe更容易获得平整致密的薄膜。将该CIS薄膜直接用于电池器件的组装,获得的光电性能参数:Voc为50 m V,Jsc为8 m A/cm^2。
基金Supported by the National Natural Science Foundation of China under Grant Nos 11374336 and 61176078
文摘We perform molecular beam epitaxy growth and scanning tunneling microscopy study of copper diselenide （CuSe2 ） films on SrTiO3 （001）. Using a Se-rich condition, the single-phase pyrite CuSe2 grows in the Stranski-Krastanov （layer-plus-island） mode with a preferential orientation of （111）. Our careful inspection of both the as-grown and post-annealed CuSe2 films at various temperatures invariably shows a Cu-terminated surface, which, depending on the annealing temperature, reconstructs into two distinct structures 2 ×√3 and √x ×√3-R30°. The Cu termi- nation is supported by the depressed density of states near the Fermi level, measured by in-situ low temperature scanning tunneling spectroscopy. Our study helps understand the preparation and surface chemistry of transition metal pyrite dichalcogenides thin films.
基金supported by the National Fund for Fostering Talents of Basic Science (J1103212)the Foundation for Outstanding Young Scientist in Shandong Province (BS2010CL036)~~
