分别采用超声微波溶剂热法、常压溶剂热法及高压溶剂热法制备In_2Se_3/CuSe粉体,研究不同方法制备In_2Se_3/CuSe粉体的物相、形貌,并利用涂覆–快速热处理法制作薄膜太阳电池吸收层。通过XRD、Raman、FESEM和TEM对样品的物相、形貌和组...分别采用超声微波溶剂热法、常压溶剂热法及高压溶剂热法制备In_2Se_3/CuSe粉体,研究不同方法制备In_2Se_3/CuSe粉体的物相、形貌,并利用涂覆–快速热处理法制作薄膜太阳电池吸收层。通过XRD、Raman、FESEM和TEM对样品的物相、形貌和组成进行了表征。结果表明:超声微波溶剂热法和常压溶剂热法得到的产物是以In_2Se_3+CuSe混合相的形式存在,高压溶剂热法合成的In_2Se_3/CuSe粉体则呈核壳结构,(以In_2Se_3为核,CuSe为壳)。涂覆–快速热处理法制备CIS薄膜的FESEM照片结果表明,高压溶剂热法合成的In_2Se_3/CuSe更容易获得平整致密的薄膜。将该CIS薄膜直接用于电池器件的组装,获得的光电性能参数:Voc为50 m V,Jsc为8 m A/cm^2。展开更多
Compositing a secondary phase in Ag_(2)Se can usually tune the electron and phonon scattering to improve the thermoelectric performance.However,the intrinsically high carrier concentration still limits the performance...Compositing a secondary phase in Ag_(2)Se can usually tune the electron and phonon scattering to improve the thermoelectric performance.However,the intrinsically high carrier concentration still limits the performance optimization.Here,we employ a modulation decoration strategy to simultaneously achieve submicron-scale constituents and compositional modification for synergistic optimization of thermoelectric properties.Amorphous nano Sb_(2)S_(3) has been decorated on the surface of Ag_(2)Se powders,and S was added into the Ag_(2)Se matrix through an ion exchange reaction accompanied by the formation of a crystal/amorphous mixed secondary phase of Sb_(2)(S,Se)_(3).The S doping reduced the excessive intrinsic carrier concentration,leading to modified electrical transport properties and significantly reduced electrical thermal conductivity.On the other hand,introducing the S dopants and the crystal/amorphous interfaces into the Ag_(2)Se matrix could increase the lattice anharmonicity,further contributing to the reduced thermal conductivity.Consequently,the Ag_(2)Se-0.4%Sb_(2)S_(3) sample obtains a high average zT value of>1 in the temperature range of 300–390 K.In addition,the maximum cooling temperature difference of over 85 K can be predicted in an Ag_(2)Se/Ag_(2)Se-0.4%Sb_(2)S_(3) segregated module at the hot side temperature of 350 K.展开更多
We perform molecular beam epitaxy growth and scanning tunneling microscopy study of copper diselenide （CuSe2 ） films on SrTiO3 （001）. Using a Se-rich condition, the single-phase pyrite CuSe2 grows in the Stranski-...We perform molecular beam epitaxy growth and scanning tunneling microscopy study of copper diselenide （CuSe2 ） films on SrTiO3 （001）. Using a Se-rich condition, the single-phase pyrite CuSe2 grows in the Stranski-Krastanov （layer-plus-island） mode with a preferential orientation of （111）. Our careful inspection of both the as-grown and post-annealed CuSe2 films at various temperatures invariably shows a Cu-terminated surface, which, depending on the annealing temperature, reconstructs into two distinct structures 2 ×√3 and √x ×√3-R30°. The Cu termi- nation is supported by the depressed density of states near the Fermi level, measured by in-situ low temperature scanning tunneling spectroscopy. Our study helps understand the preparation and surface chemistry of transition metal pyrite dichalcogenides thin films.展开更多
文摘分别采用超声微波溶剂热法、常压溶剂热法及高压溶剂热法制备In_2Se_3/CuSe粉体,研究不同方法制备In_2Se_3/CuSe粉体的物相、形貌,并利用涂覆–快速热处理法制作薄膜太阳电池吸收层。通过XRD、Raman、FESEM和TEM对样品的物相、形貌和组成进行了表征。结果表明:超声微波溶剂热法和常压溶剂热法得到的产物是以In_2Se_3+CuSe混合相的形式存在,高压溶剂热法合成的In_2Se_3/CuSe粉体则呈核壳结构,(以In_2Se_3为核,CuSe为壳)。涂覆–快速热处理法制备CIS薄膜的FESEM照片结果表明,高压溶剂热法合成的In_2Se_3/CuSe更容易获得平整致密的薄膜。将该CIS薄膜直接用于电池器件的组装,获得的光电性能参数:Voc为50 m V,Jsc为8 m A/cm^2。
基金financially supported by the National Natural Science Foundation of China(Nos.52472105,52272246,and 12074015)the Sichuan Science and Technology Program(Nos.2024YFHZ0309 and 2023NSFSC1596)the State Key Laboratory for Mechanical Behavior of Materials(No.20232509).
文摘Compositing a secondary phase in Ag_(2)Se can usually tune the electron and phonon scattering to improve the thermoelectric performance.However,the intrinsically high carrier concentration still limits the performance optimization.Here,we employ a modulation decoration strategy to simultaneously achieve submicron-scale constituents and compositional modification for synergistic optimization of thermoelectric properties.Amorphous nano Sb_(2)S_(3) has been decorated on the surface of Ag_(2)Se powders,and S was added into the Ag_(2)Se matrix through an ion exchange reaction accompanied by the formation of a crystal/amorphous mixed secondary phase of Sb_(2)(S,Se)_(3).The S doping reduced the excessive intrinsic carrier concentration,leading to modified electrical transport properties and significantly reduced electrical thermal conductivity.On the other hand,introducing the S dopants and the crystal/amorphous interfaces into the Ag_(2)Se matrix could increase the lattice anharmonicity,further contributing to the reduced thermal conductivity.Consequently,the Ag_(2)Se-0.4%Sb_(2)S_(3) sample obtains a high average zT value of>1 in the temperature range of 300–390 K.In addition,the maximum cooling temperature difference of over 85 K can be predicted in an Ag_(2)Se/Ag_(2)Se-0.4%Sb_(2)S_(3) segregated module at the hot side temperature of 350 K.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11374336 and 61176078
文摘We perform molecular beam epitaxy growth and scanning tunneling microscopy study of copper diselenide （CuSe2 ） films on SrTiO3 （001）. Using a Se-rich condition, the single-phase pyrite CuSe2 grows in the Stranski-Krastanov （layer-plus-island） mode with a preferential orientation of （111）. Our careful inspection of both the as-grown and post-annealed CuSe2 films at various temperatures invariably shows a Cu-terminated surface, which, depending on the annealing temperature, reconstructs into two distinct structures 2 ×√3 and √x ×√3-R30°. The Cu termi- nation is supported by the depressed density of states near the Fermi level, measured by in-situ low temperature scanning tunneling spectroscopy. Our study helps understand the preparation and surface chemistry of transition metal pyrite dichalcogenides thin films.
基金supported by the National Fund for Fostering Talents of Basic Science (J1103212)the Foundation for Outstanding Young Scientist in Shandong Province (BS2010CL036)~~
