Enhancing the separation efficiency of photogenerated carriers is propitious for the promotion of photocatalytic hydrogen production from formic acid decomposition.Herein,MoS2/Zn3In2S6(MoS2/ZIS6)composite photocatalys...Enhancing the separation efficiency of photogenerated carriers is propitious for the promotion of photocatalytic hydrogen production from formic acid decomposition.Herein,MoS2/Zn3In2S6(MoS2/ZIS6)composite photocatalysts containing varying mass percentages of MoS2 were obtained by a straightforward synthetic method.The results confirmed that MoS2,as a cocatalyst,markedly promoted the photogenerated charge separation efficiency and visible light-driven hydrogen production activity of ZIS6(λ>400 nm).Specifically,the as-prepared 0.5%MoS2/ZIS6 photocatalyst exhibited the highest photocatalytic hydrogen production rate(74.25μmol·h^-1),which was approximately 4.3 times higher than that of ZIS6(17.47μmol·h^-1).The excellent performance of the 0.5%MoS2/ZIS6 photocatalyst may be due to the fact that MoS2 has a low Fermi energy level and can thus enrich photogenerated electrons from ZIS6,and furthermore reduce H+derived from formic acid,to form hydrogen.The structure and morphology of the MoS2/ZIS6 photocatalysts and the reactive species were determined by X-ray diffraction,transmission electron microscopy,and field emission scanning electron microscopy,among others;a plausible mechanistic rationale is discussed based on the results.展开更多
The effect of the deposition temperature of the buffer layer In_2S_3 on the band alignment of CZTS/In_2S_3 heterostructures and the solar cell performance have been investigated.The In_2S_3 films are prepared by therm...The effect of the deposition temperature of the buffer layer In_2S_3 on the band alignment of CZTS/In_2S_3 heterostructures and the solar cell performance have been investigated.The In_2S_3 films are prepared by thermal evaporation method at temperatures of 30,100,150,and 200 ℃,respectively.By using x-ray photoelectron spectroscopy（XPS）,the valence band offsets（VBO） are determined to be-0.28 ±0.1,-0.28 ±0.1,-0.34 ±0.1,and-0.42 ±0.1 eV for the CZTS/In_2S_3heterostructures deposited at 30,100,150,and 200 ℃,respectively,and the corresponding conduction band offsets（CBO）are found to be 0.3 ±0.1,0.41 ±0.1,0.22±0.1,and 0.01 ±0.1 eV,respectively.The XPS study also reveals that interdiffusion of In and Cu occurs at the interface of the heterostructures,which is especially serious at 200 ℃ leading to large amount of interface defects or the formation of CuInS_2 phase at the interface.The CZTS solar cell with the buffer layer In_2S_3 deposited at 150 ℃ shows the best performance due to the proper CBO value at the heterostructure interface and the improved crystal quality of In_2S_3 film induced by the appropriate deposition temperature.The device prepared at 100 ℃presents the poorest performance owing to too high a value of CBO.It is demonstrated that the deposition temperature is a crucial parameter to control the quality of the solar cells.展开更多
In this study, In<sub>2</sub>S<sub>3</sub> thin films have been deposited on ITO and fluorine-tinoxide FTO coated glass substrates by single source vacuum thermal evaporation annealed in vacuum...In this study, In<sub>2</sub>S<sub>3</sub> thin films have been deposited on ITO and fluorine-tinoxide FTO coated glass substrates by single source vacuum thermal evaporation annealed in vacuum a 300°C - 400°C for 1 h. The samples structure was characterized by X-ray diffraction, revealing the quadratic structure of In<sub>2</sub>S<sub>3</sub> and the crystallinity depends on the temperature of annealing and nature of substrate. The various structural parameters, such as, crystalline size, dislocation density, strain and texture coefficient were calculated. The optical properties show that the refractive index dispersion data obeyed the single oscillator of the Wemple-DiDomenico model. By using this model, the dispersion parameters and the high-frequency dielectric constant were determined. The Hall Effect has been studied at room temperature. The Hall voltages, the Hall coefficient (RH) and mobility (μH) have been measured at different magnetic and electric fields. The films show n-type behavior irrespective of temperature and composition.展开更多
High quality In2S3 kinks were synthesized via a kinetically controlled thermal deposition process and their optoelectronic characteristics were systematically explored. The growth mechanism was attributed to the combi...High quality In2S3 kinks were synthesized via a kinetically controlled thermal deposition process and their optoelectronic characteristics were systematically explored. The growth mechanism was attributed to the combination of kinetic dynamic, crystal fadal energy, and surface roughness. Two trap induced emission bands were evidenced via a low temperature cathodoluminescence （CL） study. Furthermore, the nanowire junctions demonstrated a degenerative photodetection performance, as compared to the straight arms, attributed to a stress-induced extra series resistance measured from the kinked area. The well-controllable shape of the inorganic nanostructures and the detailed exploration of their optoelectronic properties are particularly valuable for their further practical applications.展开更多
The three-dimensional nanoflower-like β-In2S3 composited with carbon nanotubes {CNTs） has been synthesized by a single mode micro- wave-assisted hydrothermal technique. The In2S3 and CNTs nanocomposites （In2S3@CNTs...The three-dimensional nanoflower-like β-In2S3 composited with carbon nanotubes {CNTs） has been synthesized by a single mode micro- wave-assisted hydrothermal technique. The In2S3 and CNTs nanocomposites （In2S3@CNTs） were investigated as the anode materials of lithium batteries （LIBs） and the electromagnetic wave absorption materials. For LIBs applications, the In2S3@CNTs nanocomposite exhibited excellent cycling stability with a high reversible charge capacity of 575 mA·h·g-1 after 300 cycles at 0.S A·g^-1, In addition, the In2S3@CNTs used as electromagnetic wave absorber displayed a maximum reflection loss of-42.75 dB at 11.96 GHz with a thickness of 1.55 ram.展开更多
文摘Enhancing the separation efficiency of photogenerated carriers is propitious for the promotion of photocatalytic hydrogen production from formic acid decomposition.Herein,MoS2/Zn3In2S6(MoS2/ZIS6)composite photocatalysts containing varying mass percentages of MoS2 were obtained by a straightforward synthetic method.The results confirmed that MoS2,as a cocatalyst,markedly promoted the photogenerated charge separation efficiency and visible light-driven hydrogen production activity of ZIS6(λ>400 nm).Specifically,the as-prepared 0.5%MoS2/ZIS6 photocatalyst exhibited the highest photocatalytic hydrogen production rate(74.25μmol·h^-1),which was approximately 4.3 times higher than that of ZIS6(17.47μmol·h^-1).The excellent performance of the 0.5%MoS2/ZIS6 photocatalyst may be due to the fact that MoS2 has a low Fermi energy level and can thus enrich photogenerated electrons from ZIS6,and furthermore reduce H+derived from formic acid,to form hydrogen.The structure and morphology of the MoS2/ZIS6 photocatalysts and the reactive species were determined by X-ray diffraction,transmission electron microscopy,and field emission scanning electron microscopy,among others;a plausible mechanistic rationale is discussed based on the results.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61574038 and 61674038)the Natural Science Foundation of Fujian Province,China(Grant No.2014J05073)
文摘The effect of the deposition temperature of the buffer layer In_2S_3 on the band alignment of CZTS/In_2S_3 heterostructures and the solar cell performance have been investigated.The In_2S_3 films are prepared by thermal evaporation method at temperatures of 30,100,150,and 200 ℃,respectively.By using x-ray photoelectron spectroscopy（XPS）,the valence band offsets（VBO） are determined to be-0.28 ±0.1,-0.28 ±0.1,-0.34 ±0.1,and-0.42 ±0.1 eV for the CZTS/In_2S_3heterostructures deposited at 30,100,150,and 200 ℃,respectively,and the corresponding conduction band offsets（CBO）are found to be 0.3 ±0.1,0.41 ±0.1,0.22±0.1,and 0.01 ±0.1 eV,respectively.The XPS study also reveals that interdiffusion of In and Cu occurs at the interface of the heterostructures,which is especially serious at 200 ℃ leading to large amount of interface defects or the formation of CuInS_2 phase at the interface.The CZTS solar cell with the buffer layer In_2S_3 deposited at 150 ℃ shows the best performance due to the proper CBO value at the heterostructure interface and the improved crystal quality of In_2S_3 film induced by the appropriate deposition temperature.The device prepared at 100 ℃presents the poorest performance owing to too high a value of CBO.It is demonstrated that the deposition temperature is a crucial parameter to control the quality of the solar cells.
文摘In this study, In<sub>2</sub>S<sub>3</sub> thin films have been deposited on ITO and fluorine-tinoxide FTO coated glass substrates by single source vacuum thermal evaporation annealed in vacuum a 300°C - 400°C for 1 h. The samples structure was characterized by X-ray diffraction, revealing the quadratic structure of In<sub>2</sub>S<sub>3</sub> and the crystallinity depends on the temperature of annealing and nature of substrate. The various structural parameters, such as, crystalline size, dislocation density, strain and texture coefficient were calculated. The optical properties show that the refractive index dispersion data obeyed the single oscillator of the Wemple-DiDomenico model. By using this model, the dispersion parameters and the high-frequency dielectric constant were determined. The Hall Effect has been studied at room temperature. The Hall voltages, the Hall coefficient (RH) and mobility (μH) have been measured at different magnetic and electric fields. The films show n-type behavior irrespective of temperature and composition.
基金This work was supported by the National Natural Science Foundation of China （Nos. 21322106, 51472097 and 51402114）, National Basic Research Program of China （No. 2015CB932600）, Program for HUST Inter- disciplinary Innovation Team （No. 2015ZDTD038） and the Fundamental Research Funds for the Central Uni- versities. The authors thank the Analytical and Testing Centre of Huazhong University of Science and Tech- nology.
文摘High quality In2S3 kinks were synthesized via a kinetically controlled thermal deposition process and their optoelectronic characteristics were systematically explored. The growth mechanism was attributed to the combination of kinetic dynamic, crystal fadal energy, and surface roughness. Two trap induced emission bands were evidenced via a low temperature cathodoluminescence （CL） study. Furthermore, the nanowire junctions demonstrated a degenerative photodetection performance, as compared to the straight arms, attributed to a stress-induced extra series resistance measured from the kinked area. The well-controllable shape of the inorganic nanostructures and the detailed exploration of their optoelectronic properties are particularly valuable for their further practical applications.
基金We are grateful to the National Natural Science Foundation of China （51571172, 11404280, 51571171, 516722401, Natural Science Foundation for Distinguished Young Scholars of Hebei Province （E2017203095）, Natural Science Foundation of Hebei Province （A2015203337, E2016203484）, Science Foundation for the Excellent Youth Scholars from Universities and Colleges of Hebei Province （YQ2014009）, and Research Program of the College Science ＆ Technology of Hebei Province （ZD2017083, QN2014047）.
文摘The three-dimensional nanoflower-like β-In2S3 composited with carbon nanotubes {CNTs） has been synthesized by a single mode micro- wave-assisted hydrothermal technique. The In2S3 and CNTs nanocomposites （In2S3@CNTs） were investigated as the anode materials of lithium batteries （LIBs） and the electromagnetic wave absorption materials. For LIBs applications, the In2S3@CNTs nanocomposite exhibited excellent cycling stability with a high reversible charge capacity of 575 mA·h·g-1 after 300 cycles at 0.S A·g^-1, In addition, the In2S3@CNTs used as electromagnetic wave absorber displayed a maximum reflection loss of-42.75 dB at 11.96 GHz with a thickness of 1.55 ram.
