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Effect of Growth Parameters on Core Length of Φ76.2mm Heavily Sb-doped Si Crystals
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作者 曾世铭 何林 +2 位作者 王君毅 常青 许江华 《Rare Metals》 SCIE EI CAS CSCD 1995年第2期150-153,共4页
An M-shaped interface was observed in the top part of Φ76. 2 mm , (111) , dislocation-free, heavily Sb-doped Si single crystals, which is beneficial for crystals to keep dislocation-free condition at the beginning of... An M-shaped interface was observed in the top part of Φ76. 2 mm , (111) , dislocation-free, heavily Sb-doped Si single crystals, which is beneficial for crystals to keep dislocation-free condition at the beginning ofbody growth. Effects of seed rotation, crucible rotation , crown shape and growth rate on M-shaed interfacewere studied. Under proper conditions, impurity core length can be shortened from 6 cm to 1 cm , the yield israised by more than 5 %. 展开更多
关键词 Heavily Sb-doped Si crystals Growth parameters impuritycore
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