Indium-tin-zinc oxide(ITZO)thin-film transistor(TFT)technology holds promise for achieving high mobility and offers significant opportunities for commercialization.This paper provides a review of progress made in impr...Indium-tin-zinc oxide(ITZO)thin-film transistor(TFT)technology holds promise for achieving high mobility and offers significant opportunities for commercialization.This paper provides a review of progress made in improving the mobility of ITZO TFTs.This paper begins by describing the development and current status of metal-oxide TFTs,and then goes on to explain the advantages of selecting ITZO as the TFT channel layer.The evaluation criteria for TFTs are subsequently introduced,and the reasons and significance of enhancing mobility are clarified.This paper then explores the development of high-mobility ITZO TFTs from five perspectives:active layer optimization,gate dielectric optimization,electrode optimization,interface optimization,and device structure optimization.Finally,a summary and outlook of the research field are presented.展开更多
We reported the influence of interface trap density（Nt） on the electrical properties of amorphous InSnZnO based thin-film transistors,which were fabricated at different direct-current（DC） magnetron sputtering powe...We reported the influence of interface trap density（Nt） on the electrical properties of amorphous InSnZnO based thin-film transistors,which were fabricated at different direct-current（DC） magnetron sputtering powers.The device with the smallest Nt of 5.68×10^11 cm^-2 and low resistivity of 1.21×10^-3Ω·cm exhibited a turn-on voltage（V（ON）） of-3.60 V,a sub-threshold swing（S.S） of 0.16 V/dec and an on-off ratio（I（ON）/I（OFF）） of^8 x 10^8.With increasing Nt,the V（ON）,S.S and I（ON）/I（OFF） were suppressed to-9.40 V,0.24 V/dec and 2.59×10^8,respectively.The V（TH） shift under negative gate bias stress has also been estimated to investigate the electrical stability of the devices.The result showed that the reduction in Nt contributes to an improvement in the electrical properties and stability.展开更多
基金financially supported in part by Shenzhen Municipal Research Program(Grant NO.SGDX20211123145404006)in part by National Natural Science Foundation of China(Grant NO.62274111)+1 种基金in part by Guangdong Basic and Applied Basic Research Foundation(Grant NO.2021A1515011858)in part by Innovation and Technology Fund of Hong Kong(Grant NO.GHP/018/21SZ)。
文摘Indium-tin-zinc oxide(ITZO)thin-film transistor(TFT)technology holds promise for achieving high mobility and offers significant opportunities for commercialization.This paper provides a review of progress made in improving the mobility of ITZO TFTs.This paper begins by describing the development and current status of metal-oxide TFTs,and then goes on to explain the advantages of selecting ITZO as the TFT channel layer.The evaluation criteria for TFTs are subsequently introduced,and the reasons and significance of enhancing mobility are clarified.This paper then explores the development of high-mobility ITZO TFTs from five perspectives:active layer optimization,gate dielectric optimization,electrode optimization,interface optimization,and device structure optimization.Finally,a summary and outlook of the research field are presented.
文摘以P型<100>硅作为衬底,采用射频磁控溅射技术,在室温下制备了氮掺杂氧化铟锡锌薄膜晶体管(ITZO TFTs),研究了氮气流量对氧化铟锡锌薄膜晶体管结构、光学、电学特性以及稳定性的影响。实验结果表明:在不同氮气流量条件下制备的氧化铟锡锌薄膜均为非晶态,在可见光范围内的平均透过率均在90%左右,光学带隙数值在3.28~3.32 e V之间变化。在氮气流量为4 m L/min时制备的ITZO TFTs,有源层与栅极电介质界面处的界面态密度(N^(max)_s)仅为4.3×10^(11)cm^(-2),场效应迁移率(μ_(FE))为18.72 cm^2/(V·s),开关比(I_(on/off))为10~6,亚阈值摆幅(S)为0.39 V/dec,电学性能最优。栅极正偏压应力测试结果表明,该器件具有最强的稳定性。因此,适量的氮掺杂可有效地实现器件氧空位的钝化,降低器件的界面态密度,提高ITZO TFTs的电学性能及稳定性。
文摘We reported the influence of interface trap density（Nt） on the electrical properties of amorphous InSnZnO based thin-film transistors,which were fabricated at different direct-current（DC） magnetron sputtering powers.The device with the smallest Nt of 5.68×10^11 cm^-2 and low resistivity of 1.21×10^-3Ω·cm exhibited a turn-on voltage（V（ON）） of-3.60 V,a sub-threshold swing（S.S） of 0.16 V/dec and an on-off ratio（I（ON）/I（OFF）） of^8 x 10^8.With increasing Nt,the V（ON）,S.S and I（ON）/I（OFF） were suppressed to-9.40 V,0.24 V/dec and 2.59×10^8,respectively.The V（TH） shift under negative gate bias stress has also been estimated to investigate the electrical stability of the devices.The result showed that the reduction in Nt contributes to an improvement in the electrical properties and stability.
