Current mirror integration（CMI） read out integrated circuit（ROIC） topology provides a low input impedance to photo-detectors and provides large injection efficiency, large charge handling capacity and snapshot mod...Current mirror integration（CMI） read out integrated circuit（ROIC） topology provides a low input impedance to photo-detectors and provides large injection efficiency, large charge handling capacity and snapshot mode operation without in-pixel opamps. The ROIC described in this paper has been implemented with a modified current mirror circuit, with matched PMOS pairs for detector input stage and its biasing. The readout circuit has been designed for 30×30μm^2 pixel size, 4×4 array size, variable frame rate, 5 Me charga pixel per second（Mpps）.Experimental performance of the test chip has achieved 15 Me charge handling capacity, a high dynamic range of83 dB, 99.8% linearity and 99.96% injection efficiency. The ROIC design has been fabricated in 3.3 V 1P6 MUMC180 nm CMOS process and tested up to 5 MHz pixel rate at room and at cryogenic temperature.展开更多
This study reports on the mid-infrared （mid-IR） photothermal response of multilayer MoS2 thin films grown on crystalline （p-type silicon and c-axis- oriented single crystal sapphire） and amorphous （Si/SiO2 and Si...This study reports on the mid-infrared （mid-IR） photothermal response of multilayer MoS2 thin films grown on crystalline （p-type silicon and c-axis- oriented single crystal sapphire） and amorphous （Si/SiO2 and Si/SiN） substrates by pulsed laser deposition （PLD）. The photothermal response of the MoS2 films is measured as the changes in the resistance of the MoS2 films when irradiated with a mid-IR （7 to 8.2 μm） source. We show that enhancing the temperature coefficient of resistance （TCR） of the MoS2 thin films is possible by controlling the film-substrate interface through a proper choice of substrate and growth conditions. The thin films grown by PLD are characterized using X-ray diffraction, Raman, atomic force microscopy, X-ray photoelectron microscopy, and transmission electron microscopy. The high-resolution transmission electron microscopy （HRTEM） images show that the MoS2 films grow on sapphire substrates in a layer-by-layer manner with misfit dislocations. The layer growth morphology is disrupted when the films are grown on substrates with a diamond cubic structure （e.g., silicon） because of twin growth formation. The growth morphology on amorphous substrates, such as Si/SiO2 or Si/SiN, is very different. The PLD-grown MoS2 films on silicon show higher TCR （-2.9% K^-1 at 296 K）, higher mid-IR sensitivity （△R/R = 5.2%）, and higher responsivity （8.7 V·W^-1） compared to both the PLD-grown films on other substrates and the mechanically exfoliated MoS2 flakes transferred to different substrates.展开更多
基金the support extended by Shri Tapan Mishra, Director, Space Applications Centre, Ahmedabad, IndiaSensor Development Area, Space Applications Centre, Ahmedabad, India for their support
文摘Current mirror integration（CMI） read out integrated circuit（ROIC） topology provides a low input impedance to photo-detectors and provides large injection efficiency, large charge handling capacity and snapshot mode operation without in-pixel opamps. The ROIC described in this paper has been implemented with a modified current mirror circuit, with matched PMOS pairs for detector input stage and its biasing. The readout circuit has been designed for 30×30μm^2 pixel size, 4×4 array size, variable frame rate, 5 Me charga pixel per second（Mpps）.Experimental performance of the test chip has achieved 15 Me charge handling capacity, a high dynamic range of83 dB, 99.8% linearity and 99.96% injection efficiency. The ROIC design has been fabricated in 3.3 V 1P6 MUMC180 nm CMOS process and tested up to 5 MHz pixel rate at room and at cryogenic temperature.
文摘This study reports on the mid-infrared （mid-IR） photothermal response of multilayer MoS2 thin films grown on crystalline （p-type silicon and c-axis- oriented single crystal sapphire） and amorphous （Si/SiO2 and Si/SiN） substrates by pulsed laser deposition （PLD）. The photothermal response of the MoS2 films is measured as the changes in the resistance of the MoS2 films when irradiated with a mid-IR （7 to 8.2 μm） source. We show that enhancing the temperature coefficient of resistance （TCR） of the MoS2 thin films is possible by controlling the film-substrate interface through a proper choice of substrate and growth conditions. The thin films grown by PLD are characterized using X-ray diffraction, Raman, atomic force microscopy, X-ray photoelectron microscopy, and transmission electron microscopy. The high-resolution transmission electron microscopy （HRTEM） images show that the MoS2 films grow on sapphire substrates in a layer-by-layer manner with misfit dislocations. The layer growth morphology is disrupted when the films are grown on substrates with a diamond cubic structure （e.g., silicon） because of twin growth formation. The growth morphology on amorphous substrates, such as Si/SiO2 or Si/SiN, is very different. The PLD-grown MoS2 films on silicon show higher TCR （-2.9% K^-1 at 296 K）, higher mid-IR sensitivity （△R/R = 5.2%）, and higher responsivity （8.7 V·W^-1） compared to both the PLD-grown films on other substrates and the mechanically exfoliated MoS2 flakes transferred to different substrates.
