The population of the third(n=3)two-dimensional electron subband of InGaAs/InAlAs modulation-doped structures has been observed by means of Fourier transform photoluminescence(PL).Three well resolved PL peaks centred ...The population of the third(n=3)two-dimensional electron subband of InGaAs/InAlAs modulation-doped structures has been observed by means of Fourier transform photoluminescence(PL).Three well resolved PL peaks centred at 0.737,0.908,and 0.980eV are observed,which are attributed to the transitions from the lowest three electron subbands to the n=1 heavy-hole subband.The subband separations clearly exhibiting the features of the stepped quantum well with triangle and square potentials are consistent with numerical calculation.Thanks to the presence of Fermi cutoff,the population ratio of these three subbands can be estimated.Temperature and excitation-dependent luminescences are also analyzed.展开更多
Avalanche photodiodes are widely utilized in research, military and commercial applications which make them attractive for further development. In this paper the results of numerical simulations of uncooled InGaAs/InA...Avalanche photodiodes are widely utilized in research, military and commercial applications which make them attractive for further development. In this paper the results of numerical simulations of uncooled InGaAs/InAlAs/InP based photodiodes are presented. The devices were optimized for 1.55 μm wavelength detection. For device modeling the APSYS Crosslight software was used. Simulated structure consists of separate absorption, charge and multiplication layers with undepleted absorption region and thin charge layer. Based on numerical calculations, the device characteristics like band diagram, dark current, photo current, gain, breakdown voltage and gain bandwidth product were evaluated. The simulation results highlight importance of Zener effect in avalanche photodiode operation.展开更多
报道了用 MBE技术生长的 Ga As基 In Al As/In Ga As改变结构高电子迁移率晶体管 (MHEMT)的制作过程和器件的直流性能。对于栅长为 0 .8μm的器件 ,最大非本征跨导和饱和电流密度分别为 3 5 0 m S/mm和1 90 m A/mm。源漏击穿电压和栅反...报道了用 MBE技术生长的 Ga As基 In Al As/In Ga As改变结构高电子迁移率晶体管 (MHEMT)的制作过程和器件的直流性能。对于栅长为 0 .8μm的器件 ,最大非本征跨导和饱和电流密度分别为 3 5 0 m S/mm和1 90 m A/mm。源漏击穿电压和栅反向击穿电压分别为 4V和 7.5 V。这些直流特性超过了相同的材料和工艺条件下 Ga As基 PHEMT的水平 ,与 In P基 In Al As/In Ga As展开更多
基金Supported by the National Natural Science Foundation of China.
文摘The population of the third(n=3)two-dimensional electron subband of InGaAs/InAlAs modulation-doped structures has been observed by means of Fourier transform photoluminescence(PL).Three well resolved PL peaks centred at 0.737,0.908,and 0.980eV are observed,which are attributed to the transitions from the lowest three electron subbands to the n=1 heavy-hole subband.The subband separations clearly exhibiting the features of the stepped quantum well with triangle and square potentials are consistent with numerical calculation.Thanks to the presence of Fermi cutoff,the population ratio of these three subbands can be estimated.Temperature and excitation-dependent luminescences are also analyzed.
基金partially supported by The National Centre for Research and Development,Poland under project No N R02 0025 06support from MPNS COST ACTION MP1204-TERA-MIR Radiation:Materials,Generation,Detection and Applications.
文摘Avalanche photodiodes are widely utilized in research, military and commercial applications which make them attractive for further development. In this paper the results of numerical simulations of uncooled InGaAs/InAlAs/InP based photodiodes are presented. The devices were optimized for 1.55 μm wavelength detection. For device modeling the APSYS Crosslight software was used. Simulated structure consists of separate absorption, charge and multiplication layers with undepleted absorption region and thin charge layer. Based on numerical calculations, the device characteristics like band diagram, dark current, photo current, gain, breakdown voltage and gain bandwidth product were evaluated. The simulation results highlight importance of Zener effect in avalanche photodiode operation.
基金Natural Science Foundation of Shanghai(10ZR1436300)Innovative Foundation of Shanghai Institute of Microsystem and Information TechnologyFoundation of Key Laboratory of Infrared Imaging Materials and Detectors CAS
文摘报道了用 MBE技术生长的 Ga As基 In Al As/In Ga As改变结构高电子迁移率晶体管 (MHEMT)的制作过程和器件的直流性能。对于栅长为 0 .8μm的器件 ,最大非本征跨导和饱和电流密度分别为 3 5 0 m S/mm和1 90 m A/mm。源漏击穿电压和栅反向击穿电压分别为 4V和 7.5 V。这些直流特性超过了相同的材料和工艺条件下 Ga As基 PHEMT的水平 ,与 In P基 In Al As/In Ga As
