Soil development may be impacted by periglacial processes that take place in regions where freezing and thawing episodes predominate.Mount Ilgar(2918 m a.s.l.)is a volcanic mass located on the Lesser Caucasus(4090 m a...Soil development may be impacted by periglacial processes that take place in regions where freezing and thawing episodes predominate.Mount Ilgar(2918 m a.s.l.)is a volcanic mass located on the Lesser Caucasus(4090 m a.s.l.).The objectives of this study were to assess how climate influenced the formation of periglacial landforms in Mount Ilgar,identify the morphological characteristics of each patterned ground by periglacial landforms,and investigate the pedological processes,physicochemical,biological,and mineralogical characteristics of the soils that developed on each of them.Non-sorted steps,mud circles,and stony earth circles are examples of periglacial landforms found on the slopes of the hills?küzkoku(2804 m a.s.l.)and Misikan(2674 m a.s.l.)to the north of Mount Ilgar.In terms of soil physical characteristics,the average aggregate stability and clay content of soils created on non-sorted steps are 43.52%and 8.9%,respectively;these values,however,rise dramatically in soils formed on mud circles and stony earth circles.Chemically,the soils generated on the mud and stony earth circles have lower pH values than the soils formed on the non-sorted steps,but they have higher levels of organic matter.The microbial biomass carbon and basal respiration values of the soils generated on mud circles and stony earth circles are high due to the low pH values and high organic matter contents of these soils,which also have an impact on biological activity.The rate at which soils weather is also influenced by variations in their physical,chemical,and biological characteristics.It is found that the quartz mineral is more prevalent in the soils developed on mud circles landforms,despite the fact that the distribution of the basic clay minerals in the soils is essentially the same.Additionally,smectite clay minerals with a 2:1 layer are present,according to clay mineral analysis,especially in soils that are produced from mud circle formations.One may argue that the influence of local microtopographic landforms on soil formations were the primary cause of the differences in soils on periglacial landforms developed on identical geological material and at similar elevations.展开更多
CuInS2 thin films have been prepared by ion layer gas reaction (ILGAR) using C2H5OH as solvent, CuC1and InCl3 as reagents and H2S gas as sulfuration source. The effects of cationic concentrations and numbers of cycle ...CuInS2 thin films have been prepared by ion layer gas reaction (ILGAR) using C2H5OH as solvent, CuC1and InCl3 as reagents and H2S gas as sulfuration source. The effects of cationic concentrations and numbers of cycle on the properties of CuInS2 film were investigated. The chemical composition, crystalline structure, surface topography, deposited rate, optical and electronic properties of the films were characterized by X-ray diffractrometry (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), ultraviolet-visible spectrometry (UV-Vis) and Hall System. The results show that the crystalline of CuInS2 thin films and the deposition rate have been improved with the increase of cationic concentration, while CuxS segregation phases appear with further increasing cationic concentration. The deposition rate is close to constant as cationic concentration is fixed.CuInS2 thin film derived form lower cationic concentration is uniform, compact and good in adhesion to the substrates. The absorption coefficient of CuInS2 thin films is larger than 104 cm^-1, and the band gap Eg is in the range of 1.30-1.40 eV. The dark resisitivity of the thin film decreases from 50 to 10 Ω·cm and the carrier concentration ranges are over 10^16 cm^-3.展开更多
CdS thin films were deposited by the ion layer gas reaction (TLGAR) method.Structural, chemical, topographical development as well as optical and electrical properties ofas-deposited and annealed thin films were inves...CdS thin films were deposited by the ion layer gas reaction (TLGAR) method.Structural, chemical, topographical development as well as optical and electrical properties ofas-deposited and annealed thin films were investigated by XRD, SEM, XPS, AFM and UV-VIS. The resultsshowed that the thin films are uniform, compact and good in adhesion to the substrates, and thegrowth of the films is 2.8 nm/cycle. The evolution of structure undergoes from the cubic structureto the hexagonal one with a preferred orientation along the (002) plane after annealing at 673 K. Anamount of C, O and Cl impurities can be reduced by increasing the drying temperature or byannealing in N2 atmosphere. It was found that the band gap of the CdS films shifts to higherwavelength after annealing or increasing film thickness. The electrical resistivity decreases withincreasing annealing temperature and film thickness.展开更多
CdS thin films were deposited by ILGAR （ ion lay gas reaction） method. The effect of annealing temperature under N2 atmosphere on the structural, chemical, topographical development and optical and electrical prope...CdS thin films were deposited by ILGAR （ ion lay gas reaction） method. The effect of annealing temperature under N2 atmosphere on the structural, chemical, topographical development and optical and electrical properties of CdS thin films was investigated by XRD, SEM, XPS, UV- VIS and two-probe technique. It is found that the cubic-phase of as-deposited CdS film transforms to hexagonal phase with a perfected orientation along （002） plane at 300 ℃ . The band gap decreases with increasing annealing temperature until 300 ℃ , which is consistent with the grain growth. The fall of dark and light resistivitiy is obvious with increasing annealing temperature, corresponding to the continuous grain growth and deviation of stoichiometry at higher temperature. The smooth and uniform surface of as-deposited films becomes rougher through thermal treatment, which is related to grain growth and sublimation of CdS at a higher annealing temperature.展开更多
基金supported by Ardahan University,Scientific Research Projects Office(Project No:2020-001)。
文摘Soil development may be impacted by periglacial processes that take place in regions where freezing and thawing episodes predominate.Mount Ilgar(2918 m a.s.l.)is a volcanic mass located on the Lesser Caucasus(4090 m a.s.l.).The objectives of this study were to assess how climate influenced the formation of periglacial landforms in Mount Ilgar,identify the morphological characteristics of each patterned ground by periglacial landforms,and investigate the pedological processes,physicochemical,biological,and mineralogical characteristics of the soils that developed on each of them.Non-sorted steps,mud circles,and stony earth circles are examples of periglacial landforms found on the slopes of the hills?küzkoku(2804 m a.s.l.)and Misikan(2674 m a.s.l.)to the north of Mount Ilgar.In terms of soil physical characteristics,the average aggregate stability and clay content of soils created on non-sorted steps are 43.52%and 8.9%,respectively;these values,however,rise dramatically in soils formed on mud circles and stony earth circles.Chemically,the soils generated on the mud and stony earth circles have lower pH values than the soils formed on the non-sorted steps,but they have higher levels of organic matter.The microbial biomass carbon and basal respiration values of the soils generated on mud circles and stony earth circles are high due to the low pH values and high organic matter contents of these soils,which also have an impact on biological activity.The rate at which soils weather is also influenced by variations in their physical,chemical,and biological characteristics.It is found that the quartz mineral is more prevalent in the soils developed on mud circles landforms,despite the fact that the distribution of the basic clay minerals in the soils is essentially the same.Additionally,smectite clay minerals with a 2:1 layer are present,according to clay mineral analysis,especially in soils that are produced from mud circle formations.One may argue that the influence of local microtopographic landforms on soil formations were the primary cause of the differences in soils on periglacial landforms developed on identical geological material and at similar elevations.
文摘CuInS2 thin films have been prepared by ion layer gas reaction (ILGAR) using C2H5OH as solvent, CuC1and InCl3 as reagents and H2S gas as sulfuration source. The effects of cationic concentrations and numbers of cycle on the properties of CuInS2 film were investigated. The chemical composition, crystalline structure, surface topography, deposited rate, optical and electronic properties of the films were characterized by X-ray diffractrometry (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), ultraviolet-visible spectrometry (UV-Vis) and Hall System. The results show that the crystalline of CuInS2 thin films and the deposition rate have been improved with the increase of cationic concentration, while CuxS segregation phases appear with further increasing cationic concentration. The deposition rate is close to constant as cationic concentration is fixed.CuInS2 thin film derived form lower cationic concentration is uniform, compact and good in adhesion to the substrates. The absorption coefficient of CuInS2 thin films is larger than 104 cm^-1, and the band gap Eg is in the range of 1.30-1.40 eV. The dark resisitivity of the thin film decreases from 50 to 10 Ω·cm and the carrier concentration ranges are over 10^16 cm^-3.
文摘CdS thin films were deposited by the ion layer gas reaction (TLGAR) method.Structural, chemical, topographical development as well as optical and electrical properties ofas-deposited and annealed thin films were investigated by XRD, SEM, XPS, AFM and UV-VIS. The resultsshowed that the thin films are uniform, compact and good in adhesion to the substrates, and thegrowth of the films is 2.8 nm/cycle. The evolution of structure undergoes from the cubic structureto the hexagonal one with a preferred orientation along the (002) plane after annealing at 673 K. Anamount of C, O and Cl impurities can be reduced by increasing the drying temperature or byannealing in N2 atmosphere. It was found that the band gap of the CdS films shifts to higherwavelength after annealing or increasing film thickness. The electrical resistivity decreases withincreasing annealing temperature and film thickness.
基金Funded by the Tianjin Key Research Foundarion( Grant No.033802311)
文摘CdS thin films were deposited by ILGAR （ ion lay gas reaction） method. The effect of annealing temperature under N2 atmosphere on the structural, chemical, topographical development and optical and electrical properties of CdS thin films was investigated by XRD, SEM, XPS, UV- VIS and two-probe technique. It is found that the cubic-phase of as-deposited CdS film transforms to hexagonal phase with a perfected orientation along （002） plane at 300 ℃ . The band gap decreases with increasing annealing temperature until 300 ℃ , which is consistent with the grain growth. The fall of dark and light resistivitiy is obvious with increasing annealing temperature, corresponding to the continuous grain growth and deviation of stoichiometry at higher temperature. The smooth and uniform surface of as-deposited films becomes rougher through thermal treatment, which is related to grain growth and sublimation of CdS at a higher annealing temperature.
