10-kV 4 H–SiC p-channel insulated gate bipolar transistors(IGBTs)are designed,fabricated,and characterized in this paper.The IGBTs have an active area of 2.25 mm^(2)with a die size of 3 mm×3 mm.A step space modu...10-kV 4 H–SiC p-channel insulated gate bipolar transistors(IGBTs)are designed,fabricated,and characterized in this paper.The IGBTs have an active area of 2.25 mm^(2)with a die size of 3 mm×3 mm.A step space modulated junction termination extension(SSM-JTE)structure is introduced and fabricated to improve the blocking performance of the IGBTs.The SiC p-channel IGBTs with SSM-JTE termination exhibit a leakage current of only 50 nA at-10 kV.To improve the on-state characteristics of SiC IGBTs,the hexagonal cell(H-cell)structure is designed and compared with the conventional interdigital cell(I-cell)structure.At an on-state current of 50 A/cm^(2),the voltage drops of I-cell IGBT and H-cell IGBT are10.1 V and 8.3 V respectively.Meanwhile,on the assumption that the package power density is 300 W/cm^(2),the maximum permissible current densities of the I-cell IGBT and H-cell IGBT are determined to be 34.2 A/cm^(2)and 38.9 A/cm^(2)with forward voltage drops of 8.8 V and 7.8 V,respectively.The differential specific on-resistance of I-cell structure and H-cell structure IGBT are 72.36 m?·cm^(2)and 56.92 m?·cm^(2),respectively.These results demonstrate that H-cell structure silicon carbide IGBT with SSM-JTE is a promising candidate for high power applications.展开更多
The insulated gate bipolar transistor(IGBT) was invented in early 80s as the controlled switch to replace HV MOSFETs and BJTs.Today,the IGBT is the major player in most of power conversion applications,such as home ap...The insulated gate bipolar transistor(IGBT) was invented in early 80s as the controlled switch to replace HV MOSFETs and BJTs.Today,the IGBT is the major player in most of power conversion applications,such as home appliance drives,power supplies,lighting,industrial variable speed drives,UPS,medical equipment,traction drives, power transmission,etc..As fully controlled device,die IGBT requires an appropriate gate driver in order to achieve full performances of the IGBT.The author of this paper has tried to systematically summarize some major aspects of application and control of high power as well low power IGBT.The major aspects considered are the IGBT losses,gate driver and protection techniques.展开更多
A novel trench insulated gate bipolar transistor(IGBT) with improved dynamic characteristics is proposed and investigated. The poly gate and poly emitter of the proposed IGBT are arranged alternately along the trench....A novel trench insulated gate bipolar transistor(IGBT) with improved dynamic characteristics is proposed and investigated. The poly gate and poly emitter of the proposed IGBT are arranged alternately along the trench. A self-biased p-MOSFET is formed on the emitter side. Owing to this unique three-dimensional(3D) trench architecture, both the turnoff characteristic and the turn-on characteristic can be greatly improved. At the turn-off moment, the maximum electric field and impact ionization rate of the proposed IGBT decrease and the dynamic avalanche(DA) is suppressed. Comparing with the carrier-stored trench gate bipolar transistor(CSTBT), the turn-off loss(E_(off)) of the proposed IGBT also decreases by 31% at the same ON-state voltage. At the turn-on moment, the built-in p-MOSFET reduces the reverse displacement current(I_(G_dis)), which is conducive to lowing dI_(C)/d_(t). As a result, compared with the CSTBT with the same turn-on loss(E_(on)), at I_(C) = 20 A/cm^(2), the proposed IGBT decreases by 35% of collector surge current(I_(surge)) and 52% of dI_(C)/d_(t).展开更多
Plasma extraction transit time(PETT)oscillation might appear in IGBT devices,which is harmful to the electromagnetic compatibility(EMC)of a renewable energy system.To eliminate this oscillation,its frequency-domain ch...Plasma extraction transit time(PETT)oscillation might appear in IGBT devices,which is harmful to the electromagnetic compatibility(EMC)of a renewable energy system.To eliminate this oscillation,its frequency-domain characteristics in wire-bonded IGBT devices have been extensively studied.However,the time-domain analysis of PETT oscillation,especially in Press Pack IGBT(PPI)devices,has not attracted enough attention yet.In this paper,PETT oscillations with multi-chips in PPI devices are systematically investigated by experiments.It is first reported there are multiple resonant oscillations at the tail period when multi-chips turn off.Oscillations overlap in the time domain waveforms,which lead PETT oscillation to be more serious in multi-chips.Then,PETT oscillation is divided into three different feedback states for the first time.For the IGBT chip in the PETT oscillation,its physical based model and behavior model are proposed,which further form the equivalent circuit as the two-port network.Moreover,it is indicated that only parallel resonances can lead to PETT oscillation,which is consistent with experiment results.展开更多
基金Project supported by the National Basic Research Program of China(Grant No.2015CB759600)the Science Challenge Project,China(Grant No.TZ2018003)+3 种基金the National Natural Science Foundation of China(Grant Nos.61474113,61574140,and 61804149)the Beijing NOVA Program,China(Grant Nos.2016071and Z181100006218121)the Beijing Municipal Science and Technology Commission Project,China(Grant No.Z161100002116018)the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2012098)
文摘10-kV 4 H–SiC p-channel insulated gate bipolar transistors(IGBTs)are designed,fabricated,and characterized in this paper.The IGBTs have an active area of 2.25 mm^(2)with a die size of 3 mm×3 mm.A step space modulated junction termination extension(SSM-JTE)structure is introduced and fabricated to improve the blocking performance of the IGBTs.The SiC p-channel IGBTs with SSM-JTE termination exhibit a leakage current of only 50 nA at-10 kV.To improve the on-state characteristics of SiC IGBTs,the hexagonal cell(H-cell)structure is designed and compared with the conventional interdigital cell(I-cell)structure.At an on-state current of 50 A/cm^(2),the voltage drops of I-cell IGBT and H-cell IGBT are10.1 V and 8.3 V respectively.Meanwhile,on the assumption that the package power density is 300 W/cm^(2),the maximum permissible current densities of the I-cell IGBT and H-cell IGBT are determined to be 34.2 A/cm^(2)and 38.9 A/cm^(2)with forward voltage drops of 8.8 V and 7.8 V,respectively.The differential specific on-resistance of I-cell structure and H-cell structure IGBT are 72.36 m?·cm^(2)and 56.92 m?·cm^(2),respectively.These results demonstrate that H-cell structure silicon carbide IGBT with SSM-JTE is a promising candidate for high power applications.
文摘The insulated gate bipolar transistor(IGBT) was invented in early 80s as the controlled switch to replace HV MOSFETs and BJTs.Today,the IGBT is the major player in most of power conversion applications,such as home appliance drives,power supplies,lighting,industrial variable speed drives,UPS,medical equipment,traction drives, power transmission,etc..As fully controlled device,die IGBT requires an appropriate gate driver in order to achieve full performances of the IGBT.The author of this paper has tried to systematically summarize some major aspects of application and control of high power as well low power IGBT.The major aspects considered are the IGBT losses,gate driver and protection techniques.
基金Project supported by the Natural Science Foundation of Hunan Province, China (Grant No. 2023JJ40161)the Natural Science Foundation of Changsha, China (Grant No. kq2202163)+1 种基金the National Natural Science Foundation of China (Grant No. U21A20499)the Fundamental Research Funds for the Central Universities, China (Grant No. 531118010735)。
文摘A novel trench insulated gate bipolar transistor(IGBT) with improved dynamic characteristics is proposed and investigated. The poly gate and poly emitter of the proposed IGBT are arranged alternately along the trench. A self-biased p-MOSFET is formed on the emitter side. Owing to this unique three-dimensional(3D) trench architecture, both the turnoff characteristic and the turn-on characteristic can be greatly improved. At the turn-off moment, the maximum electric field and impact ionization rate of the proposed IGBT decrease and the dynamic avalanche(DA) is suppressed. Comparing with the carrier-stored trench gate bipolar transistor(CSTBT), the turn-off loss(E_(off)) of the proposed IGBT also decreases by 31% at the same ON-state voltage. At the turn-on moment, the built-in p-MOSFET reduces the reverse displacement current(I_(G_dis)), which is conducive to lowing dI_(C)/d_(t). As a result, compared with the CSTBT with the same turn-on loss(E_(on)), at I_(C) = 20 A/cm^(2), the proposed IGBT decreases by 35% of collector surge current(I_(surge)) and 52% of dI_(C)/d_(t).
基金supported by the National Natural Science Foundation of China-State Grid of China Joint Fund for Smart Grid under Grant (U1766219).
文摘Plasma extraction transit time(PETT)oscillation might appear in IGBT devices,which is harmful to the electromagnetic compatibility(EMC)of a renewable energy system.To eliminate this oscillation,its frequency-domain characteristics in wire-bonded IGBT devices have been extensively studied.However,the time-domain analysis of PETT oscillation,especially in Press Pack IGBT(PPI)devices,has not attracted enough attention yet.In this paper,PETT oscillations with multi-chips in PPI devices are systematically investigated by experiments.It is first reported there are multiple resonant oscillations at the tail period when multi-chips turn off.Oscillations overlap in the time domain waveforms,which lead PETT oscillation to be more serious in multi-chips.Then,PETT oscillation is divided into three different feedback states for the first time.For the IGBT chip in the PETT oscillation,its physical based model and behavior model are proposed,which further form the equivalent circuit as the two-port network.Moreover,it is indicated that only parallel resonances can lead to PETT oscillation,which is consistent with experiment results.
