a Pole voltage waveforms (VA20 and VA40) for modulation index 0.4 (middle trace is A-phase voltage waveform) x-axis: 1 div.=10ms, y-axis: 1 div.= 100V b Normalized harmonic spectrum for pole voltage of Fig. 9a c A-pha...a Pole voltage waveforms (VA20 and VA40) for modulation index 0.4 (middle trace is A-phase voltage waveform) x-axis: 1 div.=10ms, y-axis: 1 div.= 100V b Normalized harmonic spectrum for pole voltage of Fig. 9a c A-phase current and phase voltage for modulation index 0.4 (reference space vector is in inner layer)展开更多
a Pole voltage waveforms (VA20 and VA40) for modulation index 0.4 (middle trace is A-phase voltage waveform) x-axis: 1 div.=10ms, y-axis: 1 div.= 100V b Normalized harmonic spectrum for pole voltage of Fig. 9a c A-pha...a Pole voltage waveforms (VA20 and VA40) for modulation index 0.4 (middle trace is A-phase voltage waveform) x-axis: 1 div.=10ms, y-axis: 1 div.= 100V b Normalized harmonic spectrum for pole voltage of Fig. 9a c A-phase current and phase voltage for modulation index 0.4 (reference space vector is in inner layer)展开更多
An accumulation channel trench gate insulated gate bipolar transistor （ACT-IGBT） is proposed. The simu- lation results show that for a blocking capability of 1200 V, the on-state voltage drops of ACT-IGBT are 1.5 an...An accumulation channel trench gate insulated gate bipolar transistor （ACT-IGBT） is proposed. The simu- lation results show that for a blocking capability of 1200 V, the on-state voltage drops of ACT-IGBT are 1.5 and 2 V at a temperature of 300 and 400 K, respectively, at a collector current density of 100 A/cm2. In contrast, the on-state voltage drops of a conventional trench gate IGBT （CT-IGBT） are 1.7 and 2.4 V at a temperature of 300 and 400 K, respectively. Compared to the CT-IGBT, the ACT-IGBT has a lower on-state voltage drop and a larger forward bias safe operating area. Meanwhile, the forward blocking characteristics and turn-off performance of the ACT-IGBT are also analyzed.展开更多
文摘a Pole voltage waveforms (VA20 and VA40) for modulation index 0.4 (middle trace is A-phase voltage waveform) x-axis: 1 div.=10ms, y-axis: 1 div.= 100V b Normalized harmonic spectrum for pole voltage of Fig. 9a c A-phase current and phase voltage for modulation index 0.4 (reference space vector is in inner layer)
文摘a Pole voltage waveforms (VA20 and VA40) for modulation index 0.4 (middle trace is A-phase voltage waveform) x-axis: 1 div.=10ms, y-axis: 1 div.= 100V b Normalized harmonic spectrum for pole voltage of Fig. 9a c A-phase current and phase voltage for modulation index 0.4 (reference space vector is in inner layer)
文摘An accumulation channel trench gate insulated gate bipolar transistor （ACT-IGBT） is proposed. The simu- lation results show that for a blocking capability of 1200 V, the on-state voltage drops of ACT-IGBT are 1.5 and 2 V at a temperature of 300 and 400 K, respectively, at a collector current density of 100 A/cm2. In contrast, the on-state voltage drops of a conventional trench gate IGBT （CT-IGBT） are 1.7 and 2.4 V at a temperature of 300 and 400 K, respectively. Compared to the CT-IGBT, the ACT-IGBT has a lower on-state voltage drop and a larger forward bias safe operating area. Meanwhile, the forward blocking characteristics and turn-off performance of the ACT-IGBT are also analyzed.
