Microcrystalline silicon films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition（jet-ICPCVD）.An investigation into the deposition rate and microstr...Microcrystalline silicon films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition（jet-ICPCVD）.An investigation into the deposition rate and microstructure properties of the deposited films showed that a high deposition rate of over 20 nm/s can be achieved while maintaining reasonable material quality.The deposition rate can be controlled by regulating the generation rate and transport of film growth precursors.The film with high crystallinity deposited at low temperature could principally result from hydrogen-induced chemical annealing.展开更多
The surface and optical properties of silicon nitride samples with different compositions were investigated. The samples were deposited on In P by inductively coupled plasma chemical vapor deposition using different N...The surface and optical properties of silicon nitride samples with different compositions were investigated. The samples were deposited on In P by inductively coupled plasma chemical vapor deposition using different NH3flow rates. Atomic force microscopy measurements show that the surface roughness is increased for the samples with both low and high NH3flow rates. By optimization, when the NH3flow rate is 6 sccm, a smooth surface with RMS roughness of 0.74 nm over a 5 × 5 μm2area has been achieved. X-ray photoelectron spectroscopy measurements reveal the Si/N ratio of the samples as a function of NH3flow rate. It is found that amorphous silicon is dominant in the samples with low NH3flow rates, which is also proved in Raman measurements. The bonding energies of the Si and N atoms have been extracted and analyzed. Results show that the bonding states of Si atoms transfer from Si0to Si+4as the NH3flow rate increases.展开更多
文摘采用ICP刻蚀(inductively coupled plasma etching)工艺制备了深台面n-on-p结构的可响应到2.4μm的延伸波长8×1元线列In Ga As探测器.器件表面采用ICP源激发的N2等离子体进行处理,然后再使用ICPCVD(inductively coupled plasma chemical vapor deposition)沉积一层Si Nx薄膜的钝化工艺.不同面积光敏元器件的电流—电压特性分析显示器件在常温和低温下侧面电流均得到有效抑制,激活能分析显示了器件优异的暗电流特性,在-10 m V偏压下,在200 K和300 K温度下暗电流密度分别为94.2 n A/cm2和5.5×10-4A/cm2.
基金Project supported by the National Natural Science Foundation of China(No.60990314)the State Key Development Program for Basic Research of China(No.2007CB936300)
文摘Microcrystalline silicon films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition（jet-ICPCVD）.An investigation into the deposition rate and microstructure properties of the deposited films showed that a high deposition rate of over 20 nm/s can be achieved while maintaining reasonable material quality.The deposition rate can be controlled by regulating the generation rate and transport of film growth precursors.The film with high crystallinity deposited at low temperature could principally result from hydrogen-induced chemical annealing.
基金supported by the National Key R&D Program of China(Nos.2017YFB0405300,2016YFB0402400)the National Natural Science Foundation of China(Nos.61775228,61675225,61605232)
文摘The surface and optical properties of silicon nitride samples with different compositions were investigated. The samples were deposited on In P by inductively coupled plasma chemical vapor deposition using different NH3flow rates. Atomic force microscopy measurements show that the surface roughness is increased for the samples with both low and high NH3flow rates. By optimization, when the NH3flow rate is 6 sccm, a smooth surface with RMS roughness of 0.74 nm over a 5 × 5 μm2area has been achieved. X-ray photoelectron spectroscopy measurements reveal the Si/N ratio of the samples as a function of NH3flow rate. It is found that amorphous silicon is dominant in the samples with low NH3flow rates, which is also proved in Raman measurements. The bonding energies of the Si and N atoms have been extracted and analyzed. Results show that the bonding states of Si atoms transfer from Si0to Si+4as the NH3flow rate increases.
