An i-Line chemically amplified(ICA)thick film positive resist is reported in this paper.The impact of process conditions on photoresist performance was investigated.Pre-apply bake temperature and post exposure bake te...An i-Line chemically amplified(ICA)thick film positive resist is reported in this paper.The impact of process conditions on photoresist performance was investigated.Pre-apply bake temperature and post exposure bake temperature affect acid diffusion and deblocking reactions,thus playing an integral role in defining the resist profile.Both pre-apply bake delay and post exposure delay(PED)affect critical dimension(CD)variation,but PED is more sensitive to contact with airborne contaminants.Different polymers and different photo-acid generators(PAG)are also illustrated in this work.By optimizing the structure and concentration of key components,an ICA resist with good environment stability and excellent lithographic performance was demonstrated.展开更多
In this article, we will report an experimental evidence of enhanced LIBS emission upon replacing a Bulk-Based ZnO target by the corresponding Nano-Based target. The plasma was initiated via interaction of a Nd:YAG la...In this article, we will report an experimental evidence of enhanced LIBS emission upon replacing a Bulk-Based ZnO target by the corresponding Nano-Based target. The plasma was initiated via interaction of a Nd:YAG laser at the fundamental wavelength with both targets in open air under the same experimental conditions. The measurements show an enhanced emission from the Zn I-lines at the wavelengths of 328.26, 330.29, 334.55, 468.06, 472.2, 481.01, 636.38 nm. The measurements were repeated at different delay times in the range from 1 to 5 μs at constant irradiation level and fixed gate time of 1 μs. The average enhancement over the different Zn I-lines was found increases exponentially up to 8-fold with delay time. The electron density to each plasma was measured utilizing the Hα-line appeared in the emitted spectra from each plasma and was found to give similar values. The electron temperatures were measured via Boltzmann plot method utilizing the relative intensities of the Zn I-lines and were found to give very close values. Moreover, the relative population density of the ground state of the zinc atoms (relative concentration) was measured spectroscopically utilizing the Boltzmann plot method and was found to increase in a very similar trend to that of enhancement. The results of the spectroscopic analysis conclude that these signal enhancements can be attributed to the higher concentration of neutral atoms in the Nano-Based material plasma with respect to the corresponding Bulk-based ZnO material.展开更多
文摘An i-Line chemically amplified(ICA)thick film positive resist is reported in this paper.The impact of process conditions on photoresist performance was investigated.Pre-apply bake temperature and post exposure bake temperature affect acid diffusion and deblocking reactions,thus playing an integral role in defining the resist profile.Both pre-apply bake delay and post exposure delay(PED)affect critical dimension(CD)variation,but PED is more sensitive to contact with airborne contaminants.Different polymers and different photo-acid generators(PAG)are also illustrated in this work.By optimizing the structure and concentration of key components,an ICA resist with good environment stability and excellent lithographic performance was demonstrated.
文摘In this article, we will report an experimental evidence of enhanced LIBS emission upon replacing a Bulk-Based ZnO target by the corresponding Nano-Based target. The plasma was initiated via interaction of a Nd:YAG laser at the fundamental wavelength with both targets in open air under the same experimental conditions. The measurements show an enhanced emission from the Zn I-lines at the wavelengths of 328.26, 330.29, 334.55, 468.06, 472.2, 481.01, 636.38 nm. The measurements were repeated at different delay times in the range from 1 to 5 μs at constant irradiation level and fixed gate time of 1 μs. The average enhancement over the different Zn I-lines was found increases exponentially up to 8-fold with delay time. The electron density to each plasma was measured utilizing the Hα-line appeared in the emitted spectra from each plasma and was found to give similar values. The electron temperatures were measured via Boltzmann plot method utilizing the relative intensities of the Zn I-lines and were found to give very close values. Moreover, the relative population density of the ground state of the zinc atoms (relative concentration) was measured spectroscopically utilizing the Boltzmann plot method and was found to increase in a very similar trend to that of enhancement. The results of the spectroscopic analysis conclude that these signal enhancements can be attributed to the higher concentration of neutral atoms in the Nano-Based material plasma with respect to the corresponding Bulk-based ZnO material.
