0引言某载重吨为30万t的VLOC,定线于国内到巴西运输铁矿石,主机型号为HHM MAN B&W 6S80MC-C,主机遥控系统为Nabtesco M-800-Ⅲ,额定转速为73r/min.出于市场行情、船舶所有人、船舶承租人等多方面的考虑,主机一直降速运行在60.8r/mi...0引言某载重吨为30万t的VLOC,定线于国内到巴西运输铁矿石,主机型号为HHM MAN B&W 6S80MC-C,主机遥控系统为Nabtesco M-800-Ⅲ,额定转速为73r/min.出于市场行情、船舶所有人、船舶承租人等多方面的考虑,主机一直降速运行在60.8r/min左右。展开更多
In order to enhance the control performance of piezo-positioning system,the influence of hysteresis characteristics and its compensation method are studied.Hammerstein model is used to represent the dynamic hysteresis...In order to enhance the control performance of piezo-positioning system,the influence of hysteresis characteristics and its compensation method are studied.Hammerstein model is used to represent the dynamic hysteresis nonlinear characteristics of piezo-positioning actuator.The static nonlinear part and dynamic linear part of the Hammerstein model are represented by models obtained through the Prandtl-Ishlinskii(PI)model and Hankel matrix system identification method,respectively.This model demonstrates good generalization capability for typical input frequencies below 200 Hz.A sliding mode inverse compensation tracking control strategy based on P-I inverse model and integral augmentation is proposed.Experimental results show that compared with PID inverse compensation control and sliding mode control without inverse compensation,the sliding mode inverse compensation control has a more ideal step response and no overshoot,moreover,the settling time is only 6.2 ms.In the frequency domain,the system closed-loop tracking bandwidth reaches 119.9 Hz,and the disturbance rejection bandwidth reaches 86.2 Hz.The proposed control strategy can effectively compensate the hysteresis nonlinearity,and improve the tracking accuracy and antidisturbance capability of piezo-positioning system.展开更多
Vanadium oxide(VO_(x))has garnered significant attention in the realm of resistive random-access memory(RRAM)owing to its outstanding resistive switching characteristics.However,the ambiguous mechanisms of resistive s...Vanadium oxide(VO_(x))has garnered significant attention in the realm of resistive random-access memory(RRAM)owing to its outstanding resistive switching characteristics.However,the ambiguous mechanisms of resistive switching and inferior stability hinder its practical applications.Herein,an RRAM named VO_(x)/TiO_(2)/n^(++)Si device is prepared.It displays bipolar resistive switching behavior and shows superior cycle endurance(>200),a significantly high on/off ratio(>10^(2))and long-term stability.The tremendous improvement in the stability of the VO_(x)/TiO_(2)/n^(++)Si device compared with the Cu/VOx/n^(++)Si device is due to the p-i-n structure of VO_(x)/TiO_(2)/n^(++)Si.The switching mechanism of the VO_(x)/TiO_(2)/n^(++)Si device is attributed to the growth and annihilation of Cu conductive filaments.展开更多
文摘In order to enhance the control performance of piezo-positioning system,the influence of hysteresis characteristics and its compensation method are studied.Hammerstein model is used to represent the dynamic hysteresis nonlinear characteristics of piezo-positioning actuator.The static nonlinear part and dynamic linear part of the Hammerstein model are represented by models obtained through the Prandtl-Ishlinskii(PI)model and Hankel matrix system identification method,respectively.This model demonstrates good generalization capability for typical input frequencies below 200 Hz.A sliding mode inverse compensation tracking control strategy based on P-I inverse model and integral augmentation is proposed.Experimental results show that compared with PID inverse compensation control and sliding mode control without inverse compensation,the sliding mode inverse compensation control has a more ideal step response and no overshoot,moreover,the settling time is only 6.2 ms.In the frequency domain,the system closed-loop tracking bandwidth reaches 119.9 Hz,and the disturbance rejection bandwidth reaches 86.2 Hz.The proposed control strategy can effectively compensate the hysteresis nonlinearity,and improve the tracking accuracy and antidisturbance capability of piezo-positioning system.
基金National Natural Science Foundation of China(No.61376017)。
文摘Vanadium oxide(VO_(x))has garnered significant attention in the realm of resistive random-access memory(RRAM)owing to its outstanding resistive switching characteristics.However,the ambiguous mechanisms of resistive switching and inferior stability hinder its practical applications.Herein,an RRAM named VO_(x)/TiO_(2)/n^(++)Si device is prepared.It displays bipolar resistive switching behavior and shows superior cycle endurance(>200),a significantly high on/off ratio(>10^(2))and long-term stability.The tremendous improvement in the stability of the VO_(x)/TiO_(2)/n^(++)Si device compared with the Cu/VOx/n^(++)Si device is due to the p-i-n structure of VO_(x)/TiO_(2)/n^(++)Si.The switching mechanism of the VO_(x)/TiO_(2)/n^(++)Si device is attributed to the growth and annihilation of Cu conductive filaments.
