We demonstrate the generation of non-classical photon pairs in a warm S-Rb atomic vapor （＇ell with no buffer gas or polarization preserving coatings via spontaneous four-wave mixing. We obtain the photon pairs with ...We demonstrate the generation of non-classical photon pairs in a warm S-Rb atomic vapor （＇ell with no buffer gas or polarization preserving coatings via spontaneous four-wave mixing. We obtain the photon pairs with a 1/e correlation time of 40 ns and the violation of Cauchy-Sehwartz inequality by a factor of 23 - 3. This provides a convenient and efficient method to generate photon pair sources based on an atomic ensemble.展开更多
The hot compressive deformation behavior of hot isostatically pressed Ti-47.5Al-2Cr-2Nb-0.2W-0.2B alloy using gas atomization powders was systematically investigated and the processing map was obtained in the temperat...The hot compressive deformation behavior of hot isostatically pressed Ti-47.5Al-2Cr-2Nb-0.2W-0.2B alloy using gas atomization powders was systematically investigated and the processing map was obtained in the temperature range of 1323-1473 Kand strain rate range of 0.001-0.5s^（-1）.The calculated activation energy in the above variational ranges of temperature and strain rate possesses a low activation energy value of approximately 365.6kJ/mol based on the constitutive relationship models developed with the Arrhenius-type constitutive model respectively considering the strain rate and deformation temperature.The hot working flow behavior during the deformation process was analyzed combined with the microstructural evolution.Meanwhile,the processing maps during the deformation process were established based on the dynamic material model and Prasad instability criterion under different deformation conditions.Finally,the optimal hot processing window of this alloy corresponding to the wide temperature range of 1353-1453 Kand the low strain rate of 0.001-0.1s^（-1） was obtained.展开更多
The effects of atomic number Z on the energy distribution of hot electrons generated by the interaction of 60fs, 130mJ, 800nm, and 7×10^17W/cm^2 laser pulses with metallic targets have been studied experimentally...The effects of atomic number Z on the energy distribution of hot electrons generated by the interaction of 60fs, 130mJ, 800nm, and 7×10^17W/cm^2 laser pulses with metallic targets have been studied experimentally. The results show that the number and the effective temperature of hot electrons increase with the atomic number Z of metallic targets, and the temperature of hot electrons are in the range of 190-230keV, which is consistent with a scaling law of hot electrons temperature.展开更多
Atomic-layer MoS_2 ultrathin films are synthesized using a hot filament chemical vapor deposition method. A combination of atomic force microscopy（AFM）, x-ray diffraction（XRD）, high-resolution transition electron ...Atomic-layer MoS_2 ultrathin films are synthesized using a hot filament chemical vapor deposition method. A combination of atomic force microscopy（AFM）, x-ray diffraction（XRD）, high-resolution transition electron microscopy（HRTEM）, photoluminescence（PL）, and x-ray photoelectron spectroscopy（XPS） characterization methods is applied to investigate the crystal structures, valence states, and compositions of the ultrathin film areas. The nucleation particles show irregular morphology, while for a larger size somewhere, the films are granular and the grains have a triangle shape. The films grow in a preferred orientation（002）. The HRTEM images present the graphene-like structure of stacked layers with low density of stacking fault, and the interlayer distance of plane is measured to be about 0.63 nm. It shows a clear quasihoneycomb-like structure and 6-fold coordination symmetry. Room-temperature PL spectra for the atomic layer MoS_2 under the condition of right and left circular light show that for both cases, the A1 and B1 direct excitonic transitions can be observed. In the meantime, valley polarization resolved PL spectra are obtained. XPS measurements provide high-purity samples aside from some contaminations from the air, and confirm the presence of pure MoS_2. The stoichiometric mole ratio of S/Mo is about 2.0–2.1, suggesting that sulfur is abundant rather than deficient in the atomic layer MoS_2 under our experimental conditions.展开更多
For the first time, absolute densities of atomic nitrogen in its ground state (N4S) have been measured in hot dry and humid air plasma columns under post-discharge regime. The determination of space-resolved absolute ...For the first time, absolute densities of atomic nitrogen in its ground state (N4S) have been measured in hot dry and humid air plasma columns under post-discharge regime. The determination of space-resolved absolute densities leads to obtain the dissociation degrees of molecular nitrogen in the plasma. The hot plasmas are generated inside an upstream gas-conditioning cell at 600 mbar when the air gas flow is directly injected at 10 slm in a microwave resonant cavity (2.45 GHz, 1 kW) placed in the downstream side. Density measurements based on laser induced fluorescence spectroscopy with two-photon excitation (TALIF), are more particularly performed along the radial and axial positions of the plasma column. Calibration of TALIF signals is performed in situ (i.e. in the same gas-conditioning cell but without plasma) using an air gas mixture containing krypton. Optical emission spectroscopy is considered to estimate the rotational gas temperature by adding a small amount of H2 in dry air to better detect OH (A-X) spectra. The rotational temperatures in humid air plasma column (50% of humidity) are larger than those of dry air plasma column by practically 30% near the nozzle of resonant cavity on the axis of the plasma column. This is partly due to attachment heating processes initiated by water vapor. A maximum of the measured absolute nitrogen density is also observed near the nozzle which is also larger for humid air plasma column. The obtained dissociation degrees of molecular nitrogen in both dry and humid air plasma along the air plasma column are lower than the cases where only thermodynamic equilibrium is assumed. This is characteristic of the absence of chemical and energetic equilibria not yet reached in the air plasma column dominated by recombination processes.展开更多
In this paper we focus on diamond film hot-filament chemical vapor deposition reactors where the only reactant is hydrogen so as to study the formation and transport of hydrogen atoms. Analysis of dimensionless number...In this paper we focus on diamond film hot-filament chemical vapor deposition reactors where the only reactant is hydrogen so as to study the formation and transport of hydrogen atoms. Analysis of dimensionless numbers for heat and mass transfer reveals that thermal conduction and diffusion are the dominant mechanisms for gas-phase heat and mass transfer, respectively. A simplified model has been established to simulate gas-phase temperature and H concentration distributions between the filament and the substrate. Examination of the relative importance of homogeneous and heterogeneous production of H atoms indicates that filament-surface decomposition of molecular hydrogen is the dominant source of H and gas-phase reaction plays a negligible role. The filament-surface dissociation rates of H2 for various filament temperatures were calculated to match H-atom concentrations observed in the literature or derived from power consumption by filaments. Arrhenius plots of the filament-surface hydrogen dissociation rates suggest that dissociation of H2 at refractory filament surface is a catalytic process, which has a rather lower effective activation energy than homogeneous thermal dissociation. Atomic hydrogen, acting as an important heat transfer medium to heat the substrate, can freely diffuse from the filament to the substrate without recombination.展开更多
This paper presents the results of unintentionally doped 4H-SiC epilayers grown on n-type Si-faced 4H-SiC substrates with 8° off-axis toward the [1120] direction by low pressure horizontal hot-wall chemical vapou...This paper presents the results of unintentionally doped 4H-SiC epilayers grown on n-type Si-faced 4H-SiC substrates with 8° off-axis toward the [1120] direction by low pressure horizontal hot-wall chemical vapour deposition. Growth temperature and pressure are 1580 ℃ and 10^4 Pa, respectively. Good surface morphology of the sample is observed using atomic force microscopy （AFM） and scanning electron microscopy （SEM）. Fourier transform infrared spectroscopy （FTIR） and x-ray diffraction （XRD） are used to characterize epitaxial layer thickness and the structural quality of the films respectively. The carrier concentration in the unintentional 4H-SiC homoepitaxial layer is about 6.4×10^14 cm^-3 obtained by C-V measurements. Schottky barrier diodes （SBDs） are fabricated on the epitaxial wafer in order to verify the quality of the wafer and to obtain information about the correlation between background impurity and electrical properties of the devices. Ni and Ti/4H-SiC Schottky barrier diodes with very good performances were obtained and their ideality factors are 1.10 and 1.05 respectively.展开更多
In order to compare the spark plasma sintedng （SPS） process plus hot isostatic press （HIP） with vacuum sintedng plus HIP, an investigation was carried out on the topography, microstructure and gain size distributi...In order to compare the spark plasma sintedng （SPS） process plus hot isostatic press （HIP） with vacuum sintedng plus HIP, an investigation was carried out on the topography, microstructure and gain size distribution of nanocrystalline WC-10Co composite powder and the sintered specimens prepared by SPS plus HIP and by vacuum sintering plus HIP by means of atomic force microscopy （AFM）. The mechanical properties of the sintered specimens were also investigated. It is very easy to find cobalt lakes in the specimen prepared by vacuum sintering plus HIP process. But the microstructure of the specimen prepared by SPS plus HIP is more homogeneous, and the grain size is smaller than that prepared by vacuum sintering plus HIP. The WC-10Co ultrafine cemented carbide consolidated by SPS plus HIP can reach a relative density of 99.4%, and the transverse rupture strength （TRS） is higher than 3540 MPa, the Rockwell A hardness （HRA） is higher than 92.8, the average grain size is smaller than 300 nm, and the WC-10Co ultrafine cemented carbide with excellent properties is achieved. The specimen prepared by SPS with HIP has better properties and microstructure than that prepared by vacuum sintering with HIP.展开更多
基金supported by the Fundamental Research Funds for the Central Universitiesthe National Natural Science Foundation of China(Nos.11774286,11374238,11574247,11374008,and 11534008)
文摘We demonstrate the generation of non-classical photon pairs in a warm S-Rb atomic vapor （＇ell with no buffer gas or polarization preserving coatings via spontaneous four-wave mixing. We obtain the photon pairs with a 1/e correlation time of 40 ns and the violation of Cauchy-Sehwartz inequality by a factor of 23 - 3. This provides a convenient and efficient method to generate photon pair sources based on an atomic ensemble.
基金the financial supports from the National Natural Science Foundation of China(Grant Nos.51301157 and 51434007)the National High Technology Research and Development Program of China 863 Program(Grant No.2013AA031103)
文摘The hot compressive deformation behavior of hot isostatically pressed Ti-47.5Al-2Cr-2Nb-0.2W-0.2B alloy using gas atomization powders was systematically investigated and the processing map was obtained in the temperature range of 1323-1473 Kand strain rate range of 0.001-0.5s^（-1）.The calculated activation energy in the above variational ranges of temperature and strain rate possesses a low activation energy value of approximately 365.6kJ/mol based on the constitutive relationship models developed with the Arrhenius-type constitutive model respectively considering the strain rate and deformation temperature.The hot working flow behavior during the deformation process was analyzed combined with the microstructural evolution.Meanwhile,the processing maps during the deformation process were established based on the dynamic material model and Prasad instability criterion under different deformation conditions.Finally,the optimal hot processing window of this alloy corresponding to the wide temperature range of 1353-1453 Kand the low strain rate of 0.001-0.1s^（-1） was obtained.
基金Project supported by the National Natural Science Foundation of China （Grant No 10275056） and the Science and Technology 0ffice of Sichuan, China （Grant 04JY029-097）.
文摘The effects of atomic number Z on the energy distribution of hot electrons generated by the interaction of 60fs, 130mJ, 800nm, and 7×10^17W/cm^2 laser pulses with metallic targets have been studied experimentally. The results show that the number and the effective temperature of hot electrons increase with the atomic number Z of metallic targets, and the temperature of hot electrons are in the range of 190-230keV, which is consistent with a scaling law of hot electrons temperature.
基金Project supported by the Natural Science Foundation of Zhejiang Province,China(Grant Nos.LY16F040003 and LY16A040007)the National Natural Science Foundation of China(Grant Nos.51401069 and 11574067)
文摘Atomic-layer MoS_2 ultrathin films are synthesized using a hot filament chemical vapor deposition method. A combination of atomic force microscopy（AFM）, x-ray diffraction（XRD）, high-resolution transition electron microscopy（HRTEM）, photoluminescence（PL）, and x-ray photoelectron spectroscopy（XPS） characterization methods is applied to investigate the crystal structures, valence states, and compositions of the ultrathin film areas. The nucleation particles show irregular morphology, while for a larger size somewhere, the films are granular and the grains have a triangle shape. The films grow in a preferred orientation（002）. The HRTEM images present the graphene-like structure of stacked layers with low density of stacking fault, and the interlayer distance of plane is measured to be about 0.63 nm. It shows a clear quasihoneycomb-like structure and 6-fold coordination symmetry. Room-temperature PL spectra for the atomic layer MoS_2 under the condition of right and left circular light show that for both cases, the A1 and B1 direct excitonic transitions can be observed. In the meantime, valley polarization resolved PL spectra are obtained. XPS measurements provide high-purity samples aside from some contaminations from the air, and confirm the presence of pure MoS_2. The stoichiometric mole ratio of S/Mo is about 2.0–2.1, suggesting that sulfur is abundant rather than deficient in the atomic layer MoS_2 under our experimental conditions.
文摘For the first time, absolute densities of atomic nitrogen in its ground state (N4S) have been measured in hot dry and humid air plasma columns under post-discharge regime. The determination of space-resolved absolute densities leads to obtain the dissociation degrees of molecular nitrogen in the plasma. The hot plasmas are generated inside an upstream gas-conditioning cell at 600 mbar when the air gas flow is directly injected at 10 slm in a microwave resonant cavity (2.45 GHz, 1 kW) placed in the downstream side. Density measurements based on laser induced fluorescence spectroscopy with two-photon excitation (TALIF), are more particularly performed along the radial and axial positions of the plasma column. Calibration of TALIF signals is performed in situ (i.e. in the same gas-conditioning cell but without plasma) using an air gas mixture containing krypton. Optical emission spectroscopy is considered to estimate the rotational gas temperature by adding a small amount of H2 in dry air to better detect OH (A-X) spectra. The rotational temperatures in humid air plasma column (50% of humidity) are larger than those of dry air plasma column by practically 30% near the nozzle of resonant cavity on the axis of the plasma column. This is partly due to attachment heating processes initiated by water vapor. A maximum of the measured absolute nitrogen density is also observed near the nozzle which is also larger for humid air plasma column. The obtained dissociation degrees of molecular nitrogen in both dry and humid air plasma along the air plasma column are lower than the cases where only thermodynamic equilibrium is assumed. This is characteristic of the absence of chemical and energetic equilibria not yet reached in the air plasma column dominated by recombination processes.
文摘In this paper we focus on diamond film hot-filament chemical vapor deposition reactors where the only reactant is hydrogen so as to study the formation and transport of hydrogen atoms. Analysis of dimensionless numbers for heat and mass transfer reveals that thermal conduction and diffusion are the dominant mechanisms for gas-phase heat and mass transfer, respectively. A simplified model has been established to simulate gas-phase temperature and H concentration distributions between the filament and the substrate. Examination of the relative importance of homogeneous and heterogeneous production of H atoms indicates that filament-surface decomposition of molecular hydrogen is the dominant source of H and gas-phase reaction plays a negligible role. The filament-surface dissociation rates of H2 for various filament temperatures were calculated to match H-atom concentrations observed in the literature or derived from power consumption by filaments. Arrhenius plots of the filament-surface hydrogen dissociation rates suggest that dissociation of H2 at refractory filament surface is a catalytic process, which has a rather lower effective activation energy than homogeneous thermal dissociation. Atomic hydrogen, acting as an important heat transfer medium to heat the substrate, can freely diffuse from the filament to the substrate without recombination.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60876061)13115 Innovation Engineering Program (Grant No. 2008ZDKG-30)the Advanced Research Program (Grant No. 51308040302)
文摘This paper presents the results of unintentionally doped 4H-SiC epilayers grown on n-type Si-faced 4H-SiC substrates with 8° off-axis toward the [1120] direction by low pressure horizontal hot-wall chemical vapour deposition. Growth temperature and pressure are 1580 ℃ and 10^4 Pa, respectively. Good surface morphology of the sample is observed using atomic force microscopy （AFM） and scanning electron microscopy （SEM）. Fourier transform infrared spectroscopy （FTIR） and x-ray diffraction （XRD） are used to characterize epitaxial layer thickness and the structural quality of the films respectively. The carrier concentration in the unintentional 4H-SiC homoepitaxial layer is about 6.4×10^14 cm^-3 obtained by C-V measurements. Schottky barrier diodes （SBDs） are fabricated on the epitaxial wafer in order to verify the quality of the wafer and to obtain information about the correlation between background impurity and electrical properties of the devices. Ni and Ti/4H-SiC Schottky barrier diodes with very good performances were obtained and their ideality factors are 1.10 and 1.05 respectively.
基金This work was financially supported by the Postdoctoral Science Foundation of China (No.2003034504),the Open Foundation ofState Key Laboratory of Advanced Technology for Materials Synthesis & Processing, Wuhan University of Technology (2004-2005)and the National High-Tech Research and Development Program of China (No.2002AA302504).
文摘In order to compare the spark plasma sintedng （SPS） process plus hot isostatic press （HIP） with vacuum sintedng plus HIP, an investigation was carried out on the topography, microstructure and gain size distribution of nanocrystalline WC-10Co composite powder and the sintered specimens prepared by SPS plus HIP and by vacuum sintering plus HIP by means of atomic force microscopy （AFM）. The mechanical properties of the sintered specimens were also investigated. It is very easy to find cobalt lakes in the specimen prepared by vacuum sintering plus HIP process. But the microstructure of the specimen prepared by SPS plus HIP is more homogeneous, and the grain size is smaller than that prepared by vacuum sintering plus HIP. The WC-10Co ultrafine cemented carbide consolidated by SPS plus HIP can reach a relative density of 99.4%, and the transverse rupture strength （TRS） is higher than 3540 MPa, the Rockwell A hardness （HRA） is higher than 92.8, the average grain size is smaller than 300 nm, and the WC-10Co ultrafine cemented carbide with excellent properties is achieved. The specimen prepared by SPS with HIP has better properties and microstructure than that prepared by vacuum sintering with HIP.
