A fully integrated Ku-band voltage controlled oscillator （VCO） is presented in an InGaP/GaAs hetero- junction bipolar transistor （HBT） technology. To achieve the wide tuning range （TR）, the VCO employs a Colpitt...A fully integrated Ku-band voltage controlled oscillator （VCO） is presented in an InGaP/GaAs hetero- junction bipolar transistor （HBT） technology. To achieve the wide tuning range （TR）, the VCO employs a Colpitts configuration, and the VCO simultaneously achieves high output power. The implemented VCO demonstrates an oscillation frequency range from 12.82 to 14.97 GHz, a frequency TR of 15.47%, an output power from 0.31 to 6.46 dBm, and a phase noise of -94.9 dBc/Hz at 1 MHz offset from 13.9 GHz center frequency. The VCO con- sumes 52.75 mW from 5 V supply and occupies an area of 0.81 × 0.78 mm2. Finally, the figures-of-merit for VCOs is discussed.展开更多
基金Project supported by the National Basic Research Program of China(No.2010CBxxxx05)the Advance Research Project of China(No.51308xxxx06)+2 种基金the Advance Research Foundation of China(No.9140A08xxxx11DZ111)Doctoral Scientific Research Foundation of Henan University of Science and Technology(No.400613480011)the Foundation of He’nan Educational Commettee(No.15A510001)
文摘A fully integrated Ku-band voltage controlled oscillator （VCO） is presented in an InGaP/GaAs hetero- junction bipolar transistor （HBT） technology. To achieve the wide tuning range （TR）, the VCO employs a Colpitts configuration, and the VCO simultaneously achieves high output power. The implemented VCO demonstrates an oscillation frequency range from 12.82 to 14.97 GHz, a frequency TR of 15.47%, an output power from 0.31 to 6.46 dBm, and a phase noise of -94.9 dBc/Hz at 1 MHz offset from 13.9 GHz center frequency. The VCO con- sumes 52.75 mW from 5 V supply and occupies an area of 0.81 × 0.78 mm2. Finally, the figures-of-merit for VCOs is discussed.
