When we use MOCVD technique,an excellent CdTe epi-layer was grown on GaAs substrates and the CdTe/GaAs hybrid substrates suitable for growing Hg_(1-x)Cd_xTe(CMT)were obtained.The x value in CMT is between 0.2 and 0.8....When we use MOCVD technique,an excellent CdTe epi-layer was grown on GaAs substrates and the CdTe/GaAs hybrid substrates suitable for growing Hg_(1-x)Cd_xTe(CMT)were obtained.The x value in CMT is between 0.2 and 0.8.The electrical properties of CMT depend upon the thickness of CdTe epi-layers.The CdTe/GaAs interface was examined by both scanning electron microscope(SEM)and electron auger spectra (EAS).The influence of defects observed at interface on electrical and optical properties of CMT fihns was dis- cussed.展开更多
利用 Ar+束溅射沉积技术实现了 Cd Te薄膜的低温生长 ,利用电化学方法进行了 Hg Cd Te表面自身阳极氧化膜的生长 ,利用生长的 Cd Te介质膜和 Hg Cd Te表面自身阳极氧化膜对 n- Hg Cd Te光导器件进行了表面钝化 .对两种器件的电阻、各项...利用 Ar+束溅射沉积技术实现了 Cd Te薄膜的低温生长 ,利用电化学方法进行了 Hg Cd Te表面自身阳极氧化膜的生长 ,利用生长的 Cd Te介质膜和 Hg Cd Te表面自身阳极氧化膜对 n- Hg Cd Te光导器件进行了表面钝化 .对两种器件的电阻、各项性能指标进行了测量分析 ,实验表明得到的 Cd Te/ Hg Cd Te界面质量已达到器件实用化水平 .展开更多
文摘When we use MOCVD technique,an excellent CdTe epi-layer was grown on GaAs substrates and the CdTe/GaAs hybrid substrates suitable for growing Hg_(1-x)Cd_xTe(CMT)were obtained.The x value in CMT is between 0.2 and 0.8.The electrical properties of CMT depend upon the thickness of CdTe epi-layers.The CdTe/GaAs interface was examined by both scanning electron microscope(SEM)and electron auger spectra (EAS).The influence of defects observed at interface on electrical and optical properties of CMT fihns was dis- cussed.
文摘利用 Ar+束溅射沉积技术实现了 Cd Te薄膜的低温生长 ,利用电化学方法进行了 Hg Cd Te表面自身阳极氧化膜的生长 ,利用生长的 Cd Te介质膜和 Hg Cd Te表面自身阳极氧化膜对 n- Hg Cd Te光导器件进行了表面钝化 .对两种器件的电阻、各项性能指标进行了测量分析 ,实验表明得到的 Cd Te/ Hg Cd Te界面质量已达到器件实用化水平 .
