AHfO2/n–In Al As MOS-capacitor has the advantage of reducing the serious gate leakage current when it is adopted in In As/Al Sb HEMT instead of the conventional Schottky-gate. In this paper, three kinds of Hf O2/n–I...AHfO2/n–In Al As MOS-capacitor has the advantage of reducing the serious gate leakage current when it is adopted in In As/Al Sb HEMT instead of the conventional Schottky-gate. In this paper, three kinds of Hf O2/n–InAlAs MOS-capacitor samples with different Hf O2 thickness values of 6, 8, and 10 nm are fabricated and used to investigate the interfacial and electrical characteristics. As the thickness is increased, the equivalent dielectric constant ε ox of Hf O2 layer is enhanced and the In AlAsHfO2 interface trap density Ditis reduced, leading to an effective reduction of the leakage current. It is found that the Hf O2 thickness of 10 nm is a suitable value to satisfy the demands of most applications of a HfO2/n–InAlAs MOS-capacitor, with a sufficiently low leakage current compromised with the threshold voltage.展开更多
The N2-plasma treatment on a HfO2 blocking layer of Au nanocrystal nonvolatile memory without any post annealing is investigated. The electrical characteristics of the MOS capacitor with structure of Al–Ta N/HfO2/Si ...The N2-plasma treatment on a HfO2 blocking layer of Au nanocrystal nonvolatile memory without any post annealing is investigated. The electrical characteristics of the MOS capacitor with structure of Al–Ta N/HfO2/Si O2/p-Si are also characterized. After N2-plasma treatment, the nitrogen atoms are incorporated into HfO2 film and may passivate the oxygen vacancy states. The surface roughness of HfO2 film can also be reduced. Those improvements of HfO2 film lead to a smaller hysteresis and lower leakage current density of the MOS capacitor. The N2-plasma is introduced into Au nanocrystal（NC） nonvolatile memory to treat the HfO2 blocking layer. For the N2-plasma treated device, it shows a better retention characteristic and is twice as large in the memory window than that for the no N2-plasma treated device. It can be concluded that the N2-plasma treatment method can be applied to future nonvolatile memory applications.展开更多
基金Project supported by the National Basic Research Program of China(Grant No.2010CB327505)the Advance Research Foundation of China(Grant No.914xxx803-051xxx111)
文摘AHfO2/n–In Al As MOS-capacitor has the advantage of reducing the serious gate leakage current when it is adopted in In As/Al Sb HEMT instead of the conventional Schottky-gate. In this paper, three kinds of Hf O2/n–InAlAs MOS-capacitor samples with different Hf O2 thickness values of 6, 8, and 10 nm are fabricated and used to investigate the interfacial and electrical characteristics. As the thickness is increased, the equivalent dielectric constant ε ox of Hf O2 layer is enhanced and the In AlAsHfO2 interface trap density Ditis reduced, leading to an effective reduction of the leakage current. It is found that the Hf O2 thickness of 10 nm is a suitable value to satisfy the demands of most applications of a HfO2/n–InAlAs MOS-capacitor, with a sufficiently low leakage current compromised with the threshold voltage.
基金supported by the High Level Talent Project of Xiamen University of Technology,China(Grant Nos.YKJ16012R and YKJ16016R)the National Natural Science Foundation of China(Grant No.51702271)
文摘The N2-plasma treatment on a HfO2 blocking layer of Au nanocrystal nonvolatile memory without any post annealing is investigated. The electrical characteristics of the MOS capacitor with structure of Al–Ta N/HfO2/Si O2/p-Si are also characterized. After N2-plasma treatment, the nitrogen atoms are incorporated into HfO2 film and may passivate the oxygen vacancy states. The surface roughness of HfO2 film can also be reduced. Those improvements of HfO2 film lead to a smaller hysteresis and lower leakage current density of the MOS capacitor. The N2-plasma is introduced into Au nanocrystal（NC） nonvolatile memory to treat the HfO2 blocking layer. For the N2-plasma treated device, it shows a better retention characteristic and is twice as large in the memory window than that for the no N2-plasma treated device. It can be concluded that the N2-plasma treatment method can be applied to future nonvolatile memory applications.
